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◈ time : A.M. 09:00
◈ place : 7th building 2th floor no.234
◈ presenter : Seahyun Kim
◈ papers information :
Department of Electronics and Informatics, Ryukoku University, Otsu, Japan
◈ papers : A. Nakashima, et al., “Thermal Sensor Using Poly-Si Thin-Film Transistor With Widened Detectable Temperature Range," IEEE Electron Device Letters, vol. 32, no.3, pp. 333-335, Feb., 2011.
◈ presenter : Sung Choi
◈ papers information :
Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
◈ papers : M. Dai et al., "A Direct Method to Extract Transient Sub-Gap Density of State (DOS) Based on Dual Gate Pulse Spectroscopy," Sci. rep., vol. 6, pp. 24067-1 - 24067-7, Jun., 2016.
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