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◈ time: A.M. 09:00
◈ place: 7th building 2th floor no. 234
◈ presenter: Bongsik Choi
◈ papers
Title: Lateral redistribution of trapped charges in nitride/oxide/Si (NOS) investigated by electrostatic force microscopy
Group: Department of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehar-ro, Yuseong-gu, Daejeon 305-701, South Korea
◈ papers information:
SJ Baik, et al., “Lateral redistribution of trapped charges in nitride/oxide/Si (NOS) investigated by electrostatic force microscopy,” Nanoscale, vol. 3, no. 6, pp. 2560-2565, 2011.
◈ presenter : Jaewon Kim
◈ papers
Title : Extraction of AlGaN/GaN heterostructure Schottky diode barrier heights from forward current-voltage characteristics
Group: School of Physics, Shangdong University, Jinan, 250100, China
◈ papers information:
Lv Yuanjie, et al, "Extraction of AlGaN/GaN heterostructure Schottky diode barrier heights from forward current-voltage characteristics," Journal of Applied Physics, vol. 109, no. 7, p. 074512, 2011.
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