360S. Kim, H.-N. Lee, H. Yang, H. Kim, S. Park, S.-J. Choi, D. M. Kim, D. H. Kim, J.-H. Bae"Analysis of Interface State According to the Polarization Switching of Ferroelectric Field-Effect Transistor"The 31th Korean Conference on Semiconductors(KCS), 2024-01
359S. Park, H. Yang, H. Kim, S. Yun, H. Lee, D. M. Kim, D. H. Kim, S.-J. Choi, J.-H. Bae*"Comparative Analysis of Polarization Switching Characteristics in Channel and Contact regions of Ferroelectric InGaZnOx Thin Film Transistor"The 31th Korean Conference on Semiconductors(KCS), 2024-01
358S.-J. Park, H. Lee, J. Ko, Y. An, H.-I. Yang, G.-S. Min, J.-H. Jang, J.-Y. Im, D. M. Kim, D. H. Kim, J.-H. Bae, M.-H. Kang*, S.-J. Choi*"Annealing process for improving electrical properties of a-IGZO TFTs with underlap-channel"The 31th Korean Conference on Semiconductors(KCS), 2024-01
357J. Park, S. Lee, H. Kim, H. Jeong, Y. Choi, S.-J. Choi, D. H. Kim, D. M. Kim, J.-H. Bae*"Comparative Analysis of the Low-Frequency Noise Behavior of a-IGZO TFT with Different Source/Drain Metal"The 31th Korean Conference on Semiconductors(KCS), 2024-01
356H. Y. Bang, H. J. Lee, J. Park, S. Lee, D. H. Kim"Investigation of hot carrier degradation of 1x-nm DRAM peripheral PMOS transistors for cryogenic memory applications"The 31th Korean Conference on Semiconductors(KCS), 2024-01
355D. H. Shin, S. J. Myoung, C. Kim, J.-H. Bae, S.-J. Choi, D. M. Kim, D. H. Kim*"Effect of the SiO2 film formation process on the recognition rate in Pd/IGZO/SiO2/p+ ‑Si memristors for artificial neural network application"The 31th Korean Conference on Semiconductors(KCS), 2024-01
354H.-I. Yang, H. Lee, J. Ko, Y. An, G.-S. Min, S.-J. Park, J.-H. Jang, J.-Y. Im, D. M. Kim, D. H. Kim, J.-H. Bae, M.-H. Kang*, S.-J. Choi*"Highly reliable hump-free multiple channel a-InGaZnO thin-film transistor on 8-inch wafer"The 31th Korean Conference on Semiconductors(KCS)`, 2024-01
353S. Eo*, S. Lee*, J. Park, S. Lee, D. H. Kim**"Analysis of conduction mechanism and stress-induced dielectric leakage current in 1x-nm DRAM cell capacitor for cryogenic memory operation"The 31th Korean Conference on Semiconductors(KCS), 2024-01
352H. Lee, H. Yang, S. Park, H. Kim, S. Yun, S.-J. Choi, D. M. Kim, D. H. Kim, J.-H. Bae*"Analysis and Modeling of Ferroelectric Amorphous InGaZnOx Thin-Film Transistor at Initial State and During Memory Operation", 2024-01
351H. J. Lee, D. Kim, C. Kim, D. M. Kim, S.-J. Choi, J.-H. Bae, D. H. Kim*"The quantum mechanical effect of amorphous InGaZnO transistors compared with silicon-on insulator transistors"The 31th Korean Conference on Semiconductors(KCS), 2024-01
350J. Y. Im, H.-I. Yang, H. Lee, J. Ko, Y. An, G. Min, S. J. Park, J.-H. Jang, D. M. Kim, D. H. Kim, J.-H. Bae, M.-H. Kang*, S.-J. Choi*"Lateral-dual gate CNT FET for physical unclonable function applications"The 31th Korean Conference on Semiconductors(KCS), 2024-01
349J.-H. Jang, H. Lee, J. Ko, Y. An, H.-I. Yang, G. Min, S. J. Park, J. Y. Im, D. M. Kim, D. H. Kim, J.-H. Bae, M.-H. Kang*, and S.-J. Choi*"Extraction of individual contact resistance and threshold voltage in carbon nanotube thin-film transistors"The 31th Korean Conference on Semiconductors(KCS), 2024-01
348S. H. Jeon, W. J. Kim, C. Kim, J.-H. Bae, S.-J. Choi, D. M. Kim, and D. H. Kim*"Effect of oxygen content on the density of states and lateral profile of dopant concentration in InGaZnO FETs regarding oxygen scavenging"The 31th Korean Conference on Semiconductors(KCS), 2024-01
347S. H. Jung, S. J. Myoung, D. Kim, S. Kim, K.-H. Lee, M. Jung, N. Han, J.-E. Yang, Y. Jang, and D. H. Kim*"The C-V-based investigation of capacitive coupling in the sub-micron amorphous InGaZnO thin-film transistors depending on the device structure, gate dielectric material, and anneal temperature"The 31th Korean Conference on Semiconductors(KCS), 2024-01
346H. Jeong, J. Park, H.-N. Lee, Y. Choi, S.-J. Choi, D. M. Kim, D. H. Kim, and J.-H. Bae*"Investigating Process-Dependent Variations in Amorphous IGZO TFTs for 2T-DRAM Application Through Monochromatic Photonic C-V Analysis"The 31th Korean Conference on Semiconductors(KCS), 2024-01
345J. R. Cho, J. Park, T. J. Yang, S. Lee, and D. H. Kim*"Investigation of bias temperature instabilities of peripheral pMOSFET and nMOSFET in CTF-NAND Flash memories with COP structure for cryogenic memory applications"The 31th Korean Conference on Semiconductors(KCS), 2024-01
344Y. Choi, H. Kim, H. Yang, S. Park, J. Park, S.-J. Choi, D. H. Kim, D. M. Kim, and J.-H. Bae*"Analysis on Drain Current Transient Response in Amorphous InGaZnOx Thin-Film Transistors"The 31th Korean Conference on Semiconductors(KCS), 2024-01
343S. H. Han, H. Kim, J. Y. Park, J.-H. Bae, S.-J. Choi, D. H. Kim, and D. M. Kim"Extraction of Subgap Density-of-States in AOS TFTs through CapacitanceVoltage Characteristics Considering the Photovoltaic Effect"The 31th Korean Conference on Semiconductors(KCS), 2024-01
342H. Kim, H. Yang, S. Park, J.-H. Bae, I. Cho"Development of Lab-Scale Pulsed Laser Annealing (PLA) System for HfxZr1-xO2 Thin Film Crystallization"The 31th Korean Conference on Semiconductors(KCS), 2024-01
341D. H. Kim, J. Park, S. J. Myoung, S. Kim, K.-H. Lee, J.-E. Yang, Y. Jang, D. H. Kim*"Characterization of the effects of hydrogen and oxygen contents on current stress-induced instability in the sub-micron amorphous InGaZnO thin-film transistors based on the AC bias real-time current p"The 31th Korean Conference on Semiconductors(KCS), 2024-01