Prof. Kim`s R.P.

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  • 6 J.-H. Park, K. Jeon, S. Lee, S. Kim, S. Kim, I. Song, C. J. Kim, J. Park, Y. Park, D. M. Kim, and D. H. Kim "Extraction of Density of States in Amorphous GaInZnO Thin Film Transistors by Combining an Optical Charge Pumping and Capacitance-Voltage Characteristics" IEEE Electron Device Letters., vol. 29, pp.1292-1295, 2008-12 PDF
  • 5 K. Jeon, C. Kim, I. Song, J. Park, S. Kim, S. Kim, Y. Park, J.-H. Park, S. Lee, D. M. Kim, and D. H. Kim "Modeling of amorphous InGaZnO thin-film transistors based on the density of states extracted from the optical response of capacitance-voltage characteristics" Appl. Phys. Lett., vol. 93, pp. 182102, 2008-11 PDF
  • 4 S. H. Seo, G.-C. Kang, K. S. Roh, K. Y. Kim, S. Lee, K.-J. Song, C. M. Choi, S. R. Park, K. Jeon, J.-H. Park, B.-G. Park, J. D. Lee, D. M. Kim, and D. H. Kim "Dynamic Bias Temperature Instability-like Behaviors under Fowler-Nordheim Program/Erase Stress in Nanoscale Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) Memories" Appl. Phys. Lett., vol. 92, pp. 133508-133510, 2008-04 PDF
  • 3 S. W. Kim, K. S. Roh, S. H. Seo, K. Y. Kim, G. C. Kang, S. Lee, C. M. Choi, S. R. Park, J. H. Park, K. C. Chun, K. J. Song, D. H. Kim and D. M. Kim "Extraction of interface states at emitter-base heterojunctions in AlGaAs/GaAs heterostructure bipolar transistors using sub-bandgap photonic excitation" Microelectronics Reliability, vol 48, issue 3, pp. 382-388, 2008-03 PDF
  • 2 S. H. Seo, S. W. Kim, J.-U. Lee, G.-C. Kang, K. S. Roh, K. Y. Kim, S. Lee, C. M. Choi, K.-J. Song, S. R. Park, J.-H. Park, K. Jeon, D. M. Kim, and D. H. Kim "Investigation of Channel Width Dependence of CHEI Program / HHI Erase Cycling Behavior in Nitride-based Charge-Trapping Flash (CTF) Memory Devices" Journal of Korean Physical Society, vol. 52, pp. 481-486, 2008-02 PDF
  • 1 S.-H. Seo, S.-W. Kim , J.-U. Lee, G.-C. Kang, K.-S. Roh, K.-Y. Kim , S.-Y. Lee, C.-M. Choi, K.-J. Song, S.-R. Park, J.-H. Park, K.-C. Jeon, D. M. Kim, D. H. Kim , H. Shin, J. D. Lee and B-G. Park "Channel width dependence of hot electron injection program/hot hole erase cycling behavior in silicon-oxide-nitride-oxide-silicon (SONOS) memories" Solid-State Electronics, vol. 52, issue 6, pp. 844-848, 2008-01 PDF
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