12S. Lee, Y. W. Jeon, S. Kim, D. Kong, D. H. Kim , and D. M. Kim"Comparative Study of Quasi-Static and Normal Capacitance-Voltage Characteristics in Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors"Solid-State Electronics, vol. 56, pp. 95-99, 2010-11
11K. Y. Kim, J. M. Jang, D. Y. Yun, D. M. Kim, D. H. Kim"Comparative Study in the Structural Dependence of Logic Gate Delays in Double-Gate and Tripple-Gate FinFETs"Journal of Semiconductor Technology and Science, vol. 10, no. 2, pp. 1385-1388, 2010-06
10H. Bae, S. C. Baek, S. Lee, J. Jang, J. S. Shin, D. Yun, H. Kim, D. H. Kim, and D. M. Kim"Separate Extraction of Source, Drain, and Substrate Resistances in MOSFETs with Parasitic Junction Current Method"IEEE Electron Device. Letters., vol. 31, no. 11, pp. 1190-1192, 2010-11
9Y. W. Jeon, S. Kim, S. Lee, D. M. Kim, D. H. Kim, J. Park, C. J. Kim, I. Song, Y. Park, U-I. Chung, J.-H. Lee, B. D. Ahn, S. Y. Park, J.-H. Park and J. H. Kim"Subgap Density of States-Based Amorphous Oxide Thin Film Transistor Simulator (DeAOTS)"IEEE Transactions on Electron Devices, vol. 57, no. 1, pp. 2988-3000, 2010-11
8S. Kim, Y. W. Jeon, J.-H. Lee, B. D. Ahn, S. Y. Park, J.-H. Park, J. H. Kim, J. Park, D. M. Kim, and D. H. Kim"Relation between Low Frequency Noise and Subgap Density of States in Amorphous InGaZnO Thin Film Transistors"IEEE Electron Device. Letters., vol. 31, no. 11, pp. 1236-1238, 2010-11
7S. Lee, Y. W. Jeon, T.-J. K. Liu, D. H. Kim, and D. M. Kim"A Novel Self-Aligned 4-Bit SONOS-Type Nonvolatile Memory Cell With T-Gate and I-Shaped FinFET Structure"IEEE Transactions on Electron Devices., vol. 57, no. 8, pp. 1728-1736, 2010-08
6K. Y. Kim, J. M. Jang, D. Y. Yun, D. M. Kim, D. H. Kim"Comparitive Study in the Structural Dependence of Logic Gate Delays in Double-Gate and Tripple-Gate FinFETs"Journal of Semiconductor Technology and Science, vol. 10, no. 2, pp. 1385-1388, 2010-06
5K. Jeon, S. Lee, D. M. Kim, and D. H. Kim"Sub-bandgap optical subthreshold current spectroscopy for extracting energy distribution of interface states in nitride-based charge trap flash memories"Solid-State Electronics, vol. 96, no. 5, pp. 557-563, 2010-05
4S. Lee, J.-H. Park, K. Jeon, S. Kim, Y. Jeon, D. H. Kim, D. M. Kim, J. C. Park and C. J. Kim"Modeling and characterization of metal-semiconductor-metal-based source-drain contacts in amorphous InGaZnO thin film transistors"Appl. Phys. Lett., vol. 96, no. 11, p. 113506, 2010-03
3S. Lee, S. Park, S. Kim, Y. Jeon, K. Jeon, J.-H. Park, J. Park, I. Song, C. J. Kim, Y. Park, D. M. Kim, and D. H. Kim"Extraction of Subgap Density of States in Amorphous InGaZnO Thin Film Transistors by Using Multi-Frequency Capacitance-Voltage Characteristics"IEEE Electron Device. Letters., vol. 31, no. 3, pp. 231-233, 2010-03
2K. J. Song, S. Y. Lee, D. H. Kim, and D. M. Kim"Structural optimization of extremely scaled planar partially insulated field effect transistors (PiFETs)"Semicond. Sci. Technol., vol. 25 , pp. 035004-1-035004-6, 2010-01
1J.-H. Park, K. Jeon, S. Lee, S. Kim, S. Kim, I. Song, J. Park, Y. Park, C. J. Kim, D. M. Kim, and D. H. Kim"Self-Consistent Technique for Extracting Density of States in Amorphous InGaZnO Thin Film Transistors"Journal of The Electrochemichal Society, vol. 157, no. 3, pp. h272-h277, 2010-01