Prof. Kim`s R.P.

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  • 111 J. Lee, S. Jun, J. Jang, H. Bae, H. Kim, J. W. Chung, S.-J. Choi, D. H. Kim, J. Lee, and D. M. Kim "Fully Transfer Characteristic-based Technique for Surface Potential and Subgap Density-of-States in p-Channel Polymer-based TFTs" IEEE Electron Device Letters, vol. 34, no. 12, pp. 1521-1523, 2013-11 PDF
  • 110 M. Bae, K. M. Lee, E.-S. Cho, H.-I. Kwon, D. M. Kim, and D. H. Kim "Analytical Current and Capacitance Models for Amorphous Indium-Gallium-Zinc-Oxide" IEEE Trans. Electron Devices, vol. 60, no. 10, pp. 3465-3473, 2013-10 PDF
  • 109 I. Nam, B. Hong, M. Kim, J. Shin, I. Song, D. M. Kim, S. Hwang, and S. Kim "Capacitive coupling model and extraction of the molecular interface states in porphyrin-silicon nanowire hybrid field-effect transistor" Applied Physics Letters, vol. 103, p. 233104, 2013-12 PDF
  • 108 H. J. Kim, S. H. Kim, J. I. Lee, K. N. Kang, D. M. Kim, and K. Cho "Optical Responses of InGaP/GaAs/InGaAs P-Channel Double Heterojunction Pseudomorphic MODFET" Electronics Lett., vol. 34, no. 1, pp. 126-128, 1998-01 PDF
  • 107 S. H. Song and D. M. Kim "A Novel Analytical Model for Short Channel Heterostructure Field Effect Transistors" Solid-State Electronics, vol. 42, no. 4, pp. 605-612, 1998- PDF
  • 106 H. J. Kim, S. J. Kim, D. M. Kim, H. Y. Chung, D. H. Woo, S. I. Kim, W. J. Choi, I. K. Han, J. I. Lee, K. N. Kang, and K. Cho "Microwave Characteristics of GaAs MESFET with Optical Illumination" Inst. of Phys. Conf. Ser., no. 145 (iscs'95), pp. 763-768, 1987-
  • 105 J. S. Shin, H. Bae, E. Hong, J. Jang, D. Yun, J. Lee, D. H. Kim, and D. M. Kim "Modeling and extraction technique for parasitic resistances in MOSFETs Combining DC I-V and low frequency C-V measurement" Solid-State Electron, vol. 72. pp. 78-81, 2012-06 PDF
  • 104 H. Bae, H. Choi, S. Jun, C. Jo, Y. H. Kim, J. S. Hwang, J. Ahn, S. Oh, J.-U. Bae, S.-J. Choi, D. H. Kim, and D. M. Kim "Single Scan Monochromatic Photonic Capacitance -Voltage Technique for Extraction of Subgap DOS over the Bandgap in Amorphous Semiconductor TFTs" IEEE Electron Device Letters, vol. 34, no. 12, pp. 1524-1526, 2013-09 PDF
  • 103 J. Kim, J. Jang, M. Bae, J. Lee, W. Kim, I. Hur, H. K. Jeong, D. M. Kim, and D. H. Kim "Characterization of Density-of-States in Polymer-based Organic Thin Film Transistors and Implementation into TCAD Simulator" Journal of Semiconductor Technology and Science, vol. 13, no. 1, pp. 43-47, 2013-02 PDF
  • 102 D. H. Kim , S. Park, Y. J. Seo, T. G. Kim , D. M. Kim, and I. H. Cho "Comparative investigation of endurance and bias temperature instability characteristics in metal-Al 2 O 3 -nitride-oxide-semiconductor (MANOS) and semiconductor-oxide-nitride-oxide-semiconductor (SONO" Journal of Semiconductor Technology and Science, vol. 12, no. 4, pp.449-457, 2012-12 PDF
  • 101 H. Jang , J. Lee , J. H. Lee , S. Seo , B.-G. Park , D. M. Kim , D. H. Kim , and I.-Y. Chung "Analysis of hysteresis characteristics of silicon nanowire biosensors in aqueous environment" Appl. Phys., vol. 99, issue 25, p. 252103, 2011-11 PDF
  • 100 S. Lee, Y. W. Jeon, S. Kim, D. Kong, D. H. Kim , and D. M. Kim "Comparative Study of Quasi-Static and Normal Capacitance-Voltage Characteristics in Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors" Solid-State Electronics, vol. 56, pp. 95-99, 2010-11 PDF
  • 99 S.H. Kim, D.-I. Moon, W. Lu, D. H. Kim, D. M. Kim, Y.-K. Choi, and S.‐J. Choi "Latch-up based bidirectional npn selector for bipolar resistance-change memory" Applied Physics Letters, vol. 103, issue. 3, p. 033505, 2013-07 PDF
  • 98 S. Jun, C. Jo, H. Bae, H. Choi, D. H. Kim, and D. M. Kim "Unified Subthreshold Coupling Factor Technique for Surface Potential and Subgap Density-of-States in Amorphous Thin Film Transistors" IEEE Electron Device Letters, vol. 34, no. 5, pp. 641-643, 2013-05 PDF
  • 97 C. Jo, S. Jun, W. Kim, I. Hur, H. Bae, S.-J. Choi, D. H. Kim, and D. M. Kim "Characterization of density-of-states and parasitic resistance in a-InGaZnO thin-film transistors after negative bias stress" Appl. Phys. Letters, vol. 102, issue. 5, p. 143502, 2013-04 PDF
  • 96 I. Hur, H. Bae, W. Kim, J. Kim, H. K. Jeong, C. Jo, S. Jun, J. Lee, Y. H. Kim, D. H. Kim, and D. M. Kim "Characterization of Intrinsic Field-Effect Mobility in TFTs by De-Embedding the Effect of Parasitic Source and Drain Resistances" IEEE Electron Device Letters, vol. 34, no. 2, pp. 250-252, 2013-02 PDF
  • 95 J. Lee, J.-M. Lee, J. H. Lee, M. Uhm, W. H. Lee, S. Hwang, I.-Y. Chung, B.-G. Park, D. M. Kim, Y.-J. Jeong,and D. H. Kim "SiNW-CMOS Hybrid Common-Source Amplifier as a Voltage-Readout Hydrogen Ion Sensor" IEEE Electron Device Letters, vol. 34, no. 1, pp. 135-137, 2013-01 PDF
  • 94 H. Bae, H. Choi, S. Oh, D. H. Kim, J. Bae, J. Kim, Y. H. Kim, and D. M. Kim "Extraction Technique for Intrinsic Subgap DOS in a-IGZO TFTs by De-Embedding the Parasitic Capacitance Through the Photonic C-V Measurement" IEEE Electron Device Letters, vol. 34, no. 1, pp. 57-59, 2013-01 PDF
  • 93 S. C. Baek, H. Bae, D. H. Kim, and D. M. Kim "Avalanche Hot Source Method for Separated Extraction of Parasitic Source and Drain Resistance in Single Metal-Oxide-Semiconductor Field Effect Transistors" Journal of Semiconductor Technology and Science, vol. 12, no. 1, pp. 46-52, 2012-03 PDF
  • 92 J. Lee, J.-M. Lee, J. H. Lee, W. H. Lee, M. Uhum, B.-G. Park, D. M. Kim, Y.-J. Jeong, and D. H. Kim "Complementary Silicon Nanowire Hydrogen Ion Sensor With High Sensitivity and Voltage Output" IEEE Electron Device Letters, vol. 33, no. 12, pp. 1768-1770, 2012-12 PDF