Prof. Kim`s R.P.

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  • 15 S. Lee, Y. W. Jeon, S. Kim, D. Kong, D. H. Kim , and D. M. Kim "Comparative Study of Quasi-Static and Normal Capacitance-Voltage Characteristics in Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors" Solid-State Electronics, vol. 56, pp. 95-99, 2010-11 PDF
  • 14 K. Y. Kim, J. M. Jang, D. Y. Yun, D. M. Kim, D. H. Kim "Comparative Study in the Structural Dependence of Logic Gate Delays in Double-Gate and Tripple-Gate FinFETs" Journal of Semiconductor Technology and Science, vol. 10, no. 2, pp. 1385-1388, 2010-06 PDF
  • 13 J. C. Park, S. Kim, S. Kim, C. Kim, I. Song, Y. Park, U.-I. Jung, D. H. Kim and J.-S. Lee "Highly Stable Transparent Amorphous Oxide Semiconductor Thin-Film Transistors Having Double-Stacked Active Layer" Advanced Materials, vol. 22, no.48, pp. 5512-5516, 2010-12 PDF
  • 12 J. C. Park, S. I. Kim, C. J. Kim, S. Kim, D. H. Kim, I.-T. Cho, and H.-I. Kwon "Impact of High-k HfO2 Dielectric on the Low-Frequency Noise Behaviors in Amorphous InGaZnO Thin Film Transistors" Japanese Journal of Applied Physics, vol. 49, no. 10, p. 100205, 2010-10 PDF
  • 11 J. C. Park, S. W. Kim, C. J. Kim, S. Kim, D. H. Kim, I.-T. Cho, and H.-I. Kwon "Low-frequency noise in amorphous indium-gallium-zinc oxide thin-film transistors from subthreshold to saturation" Appl. Phys. Lett., vol. 97, no. 12, pp. 122104, 2010-09 PDF
  • 10 H. Bae, S. C. Baek, S. Lee, J. Jang, J. S. Shin, D. Yun, H. Kim, D. H. Kim, and D. M. Kim "Separate Extraction of Source, Drain, and Substrate Resistances in MOSFETs with Parasitic Junction Current Method" IEEE Electron Device. Letters., vol. 31, no. 11, pp. 1190-1192, 2010-11 PDF
  • 9 Y. W. Jeon, S. Kim, S. Lee, D. M. Kim, D. H. Kim, J. Park, C. J. Kim, I. Song, Y. Park, U-I. Chung, J.-H. Lee, B. D. Ahn, S. Y. Park, J.-H. Park and J. H. Kim "Subgap Density of States-Based Amorphous Oxide Thin Film Transistor Simulator (DeAOTS)" IEEE Transactions on Electron Devices, vol. 57, no. 1, pp. 2988-3000, 2010-11 PDF
  • 8 S. Kim, Y. W. Jeon, J.-H. Lee, B. D. Ahn, S. Y. Park, J.-H. Park, J. H. Kim, J. Park, D. M. Kim, and D. H. Kim "Relation between Low Frequency Noise and Subgap Density of States in Amorphous InGaZnO Thin Film Transistors" IEEE Electron Device. Letters., vol. 31, no. 11, pp. 1236-1238, 2010-11 PDF
  • 7 S. Lee, Y. W. Jeon, T.-J. K. Liu, D. H. Kim, and D. M. Kim "A Novel Self-Aligned 4-Bit SONOS-Type Nonvolatile Memory Cell With T-Gate and I-Shaped FinFET Structure" IEEE Transactions on Electron Devices., vol. 57, no. 8, pp. 1728-1736, 2010-08 PDF
  • 6 K. Y. Kim, J. M. Jang, D. Y. Yun, D. M. Kim, D. H. Kim "Comparitive Study in the Structural Dependence of Logic Gate Delays in Double-Gate and Tripple-Gate FinFETs" Journal of Semiconductor Technology and Science, vol. 10, no. 2, pp. 1385-1388, 2010-06 PDF
  • 5 K. Jeon, S. Lee, D. M. Kim, and D. H. Kim "Sub-bandgap optical subthreshold current spectroscopy for extracting energy distribution of interface states in nitride-based charge trap flash memories" Solid-State Electronics, vol. 96, no. 5, pp. 557-563, 2010-05 PDF
  • 4 S. Lee, J.-H. Park, K. Jeon, S. Kim, Y. Jeon, D. H. Kim, D. M. Kim, J. C. Park and C. J. Kim "Modeling and characterization of metal-semiconductor-metal-based source-drain contacts in amorphous InGaZnO thin film transistors" Appl. Phys. Lett., vol. 96, no. 11, p. 113506, 2010-03 PDF
  • 3 S. Lee, S. Park, S. Kim, Y. Jeon, K. Jeon, J.-H. Park, J. Park, I. Song, C. J. Kim, Y. Park, D. M. Kim, and D. H. Kim "Extraction of Subgap Density of States in Amorphous InGaZnO Thin Film Transistors by Using Multi-Frequency Capacitance-Voltage Characteristics" IEEE Electron Device. Letters., vol. 31, no. 3, pp. 231-233, 2010-03 PDF
  • 2 K. J. Song, S. Y. Lee, D. H. Kim, and D. M. Kim "Structural optimization of extremely scaled planar partially insulated field effect transistors (PiFETs)" Semicond. Sci. Technol., vol. 25 , pp. 035004-1-035004-6, 2010-01 PDF
  • 1 J.-H. Park, K. Jeon, S. Lee, S. Kim, S. Kim, I. Song, J. Park, Y. Park, C. J. Kim, D. M. Kim, and D. H. Kim "Self-Consistent Technique for Extracting Density of States in Amorphous InGaZnO Thin Film Transistors" Journal of The Electrochemichal Society, vol. 157, no. 3, pp. H272-H277, 2010-01 PDF
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