Prof. Kim`s R.P.

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  • 158 J. Yoon§, J. Lee§, B. Choi§, D. Lee, D. H. Kim, D. M. Kim, D.-I. Moon, M. Lim, S. Kim, S.-J. Choi ( §These authors equally contributed to this work) "Flammable carbon nanotube transistors on a nitrocellulose paper substrate for transient electronics" Nano Research, DOI: 10.1007/s12274-016-1268-6, 2016-09 PDF
  • 157 K. M. Lee, J. T. Jang, Y.-J. Baek, H. Kang, S. Choi, S.-J. Choi, D. M. Kim, C. J. Kang, T.-S. Yoon, H.-S. Mo, D. H. Kim "The γ -Fe2O3 Nanoparticle Assembly-Based Memristor Ratioed Logic and Its Optical Tuning" IEEE Electron Device Letters, Vol. 37, no. 8, pp. 986-989, DOI: 10.1109/LED.2016.2582523 , 2016-08 PDF
  • 156 H. M. Choi, D. J. Shin, J. H. Lee, H.-S. Mo, T. J. Park, B.-G. Park, D. M. Kim, S.-J. Choi, D. H. Kim, J. Park "The Analysis of Characteristics in Dry and Wet Environments of Silicon Nanowire-Biosensor" Journal of Nanoscience and Nanotechnology, vol. 16, no. 5, pp. 4901–4905, DOI: 10.1166/jnn.2016.12247 , 2016-05 PDF
  • 155 J. Yoon, B. Choi, S. Choi, J. Lee, J. Lee, M. Jeon, Y Lee, J. Han, J. Lee, D. M. Kim, D. H. Kim, S. Kim, S.-J. Choi "Evaluation of interface trap densities and quantum capacitance in carbon nanotube network thin-film transistors" Nanotechnology, vol. 27, no. 29, p. 295704, DOI: 10.1088/0957-4484/27/29/295704, 2016-06 PDF
  • 154 D. Kwon, J. H. Lee, S. Kim, R. Lee, H. Mo, J. Park, D. H. Kim, B.-G. Park "Drift-Free pH Detection With Silicon Nanowire Field-Effect Transistors" IEEE Electron Device Letters, vol. 37, no. 5, pp. 652-655, DOI: 10.1109/LED.2016.2542846, 2016-05 PDF
  • 153 S. K. Kim, J. Lee, D.-M. Geum, M.-S. Park, W. J. Choi, S.-J. Choi, D. H. Kim, S. Kim*, D. M. Kim* (*co-corresponding authors) "Fully Subthreshold Current-Based Characterization of Interface Traps and Surface Potential in III-V-on-Insulator MOSFETs" Solid-State Electronics, vol. 122, pp. 8-12, DOI: 10.1016/j.sse.2016.04.011, 2016-04 PDF
  • 152 J. Y. Choi, S. Kim, D. H. Kim, S. Y. Lee "Role ofmetal capping layer on highly enhanced electrical performance of In-free Si–Zn–Sn–O thin film transistor" Thin Solid Films, vol. 594, pp. 293–298, 2015-11 PDF
  • 151 S. Choi, H. Kim, C. Jo, H.-S. Kim, S.-J. Choi, D. M. Kim, J. Park, D. H. Kim "The Effect of Gate and Drain Fields on the Competition Between Donor-Like State Creation and Local Electron Trapping in In–Ga–Zn–O Thin Film Transistors Under Current Stress" IEEE Electron Device Letters, vol. 36, no. 12, pp. 1336-1339, 2015-12 PDF
  • 150 B. Choi, D. Lee, J.-H. Ahn, J. Yoon, J. Lee, M. Jeon, D. M. Kim, D. H. Kim , I. Park, Y.-K. Choi, and S.-J Choi "Investigation of optimal hydrogen sensing performance in semiconducting carbon nanotube network transistors with palladium electrodes" Applied Physics Letters, vol. 107, p. 193108, 2015-11 PDF
  • 149 J. Kim, S. Choi, J. Jang, J. T. Jang, J. Kim, S.-J. Choi, D. M. Kim, and D. H. Kim "Analysis of Instability Mechanism under Simultaneous Positive Gate and Drain Bias Stress in Self-Aligned Top- Gate Amorphous Indium-Zinc-Oxide Thin-Film Transistors" JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, vol. 15, no. 5, pp. 526-532, 2015-10 PDF
  • 148 H. Kang, J. T. Jang, J. Kim, S.-J. Choi, D. M. Kim, and D. H. Kim "Comparative Analysis on Positive Bias Stress-Induced Instability under High VGS/Low VDS and Low VGS/High VDS in Amorphous InGaZnO Thin-Film Transistors" JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, vol. 15, no. 5, pp.519-525, 2015-10 PDF
  • 147 Sungju Choi, Youngjin Kang, Jonghwa Kim, Jungmok Kim, Sung-Jin Choi, Dong Myong Kim, Ho-Young Cha, Hyungtak Kim, and Dae Hwan Kim "Frequency-dependent C-V Characteristic-based Extraction of Interface Trap Density in Normally-off Gate-recessed AlGaN/GaN Heterojunction Field-effect Transistors" JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, vol. 15, no. 5, pp.497-503, 2015-10 PDF
  • 146 Jungmin Lee, Sungju Choi, Seong Kwang Kim, Sung-Jin Choi, Dae Hwan Kim, Jisun Park, and Dong Myong Kim "Modeling and Characterization of the Abnormal Hump in n-Channel Amorphous-InGaZnO Thin-Film Transistors After High Positive Bias Stress" IEEE Electron Device Letters, vol. 36, no. 10, pp.1047-1049, 2015-10 PDF
  • 145 B. Choi, J.-H. Ahn, J. Lee, J. Yoon, J. Lee, M. Jeon, D. M. Kim, D. H. Kim, I. Park, S.-J. Choi "A bottom-gate silicon nanowire field-effect transistor with functionalized palladium nanoparticles for hydrogen gas sensors" Solid-State Electronics, vol. 104 pp. 76-19, 2015-08 PDF
  • 144 H. Choi, J. Lee, H. Bae, S.-J. Choi, D. H. Kim, D. M. Kim "Bias-Dependent Effective Channel Length for Extraction of Subgap DOS by Capacitance–Voltage Characteristics in Amorphous Semiconductor TFTs" IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 62. no. 8, pp. 2689-2694, 2015-08 PDF
  • 143 J. T. Jang, J. Park, B. D. Ahn, D. M. Kim, S.-J. Choi, H.-S. Kim, D. H. Kim "Study on the Photoresponse of Amorphous In−Ga−Zn−O and Zinc Oxynitride Semiconductor Devices by the Extraction of Sub-Gap- State Distribution and Device Simulation" ACS Appl. Mater. Interfaces, vol. 28. no. 7, pp. 15570-15577, 2015-06 PDF
  • 142 J. Lee,J. Jang, B. Choi, J. Yoon, J.-Y. Kim, Y.-K. Choi, D. M. Kim, D. H. Kim, S.-J. Cho "A Highly Responsive Silicon Nanowire/Amplifier MOSFET Hybrid Biosensor" Scientific Reports, Scientific Reports 5, 2015-07 PDF
  • 141 S. Choi, H. Kim, C. Jo, H.-S. Kim, S.-J. Choi, D. M. Kim, D. H. Kim "A Study on the Degradation of In–Ga–Zn–O Thin-Film Transistors Under Current Stress by Local Variations in Density of States and Trapped Charge Distribution" IEEE ELECTRON DEVICE LETTERS, vol. 36. no. 7, pp. 690-692, 2015-06 PDF
  • 140 K. M. Lee, J. Jang, S.-J. Choi, D. M. Kim,K. R. Kim,D. H. Kim "Extraction of Propagation Delay-Correlated Mobility and Its Verification for Amorphous InGaZnO Thin-Film Transistor-Based Inverters" IEEE Transactions on Electron Devices, vol. 62. no. 5, pp. 1504-1510, 2015-05 PDF
  • 139 J. T. Jang, J. Park, B. D. Ahn, D. M. Kim, S.-J. Choi, H.-S. Kim, D. H. Kim "Effect of direct current sputtering power on the behavior of amorphous indium-galliumzinc- oxide thin-film transistors under negative bias illumination stress" Applied Physics Letters, vol. 106, p. 123505, 2015-04 PDF