Prof. Kim`s R.P.

Home > People > Professor > Prof. Kim`s R.P.

  • 78 D. Yun, M. Bae, J. Jang, H. Bae, J. S. Shin, E. Hong, J. Lee,D. H. Kim, and D. M. Kim "Differential Body Factor Technique for Characterization of Interface Trap in MOSFETs" IEEE Electron Device Lett., vol. 32, no. 9, pp. 1206-1208, 2011-09 PDF
  • 77 J. S. Shin, H. Bae, J. Jang, D. Yun, J. Lee, E. Hong, D. H. Kim, and D. M. Kim "A Novel Double HBT-based Capacitorless 1T DRAM Cell with Si/SiGe Heterojunctions" IEEE Electron Device Lett., vol. 32, no. 7, pp. 850-852, 2011-07 PDF
  • 76 S. Y. Lee, D. H. Kim, E. Chong, Y. W. Jeon, and D. H. Kim "Effect of channel thickness on density of states in amorphous InGaZnO thin film transistor" Applied Physics Letters, vol. 98, no. 12, pp. 1077-3118, 2011-03 PDF
  • 75 E. Chong, Y. W. Jeon, Y. S. Chun, D. H. Kim, and S. Y. Lee "Localization effect of a current-path in amorphous In-Ga-Zn-O thin film transistors with a highly doped buried-layer" Thin Solid Film, vol. 519, no. 13, pp. 4347-4350, 2011-04 PDF
  • 74 H. Bae, J. Jang, J. S. Shin, D. Yun, J. Lee, T. W. Kim, D. H. Kim, and D. M. Kim "Modeling and Separate Extraction of Gate Bias- and Channel Length-Dependent Intrinsic and Extrinsic Source-Drain Resistances in MOSFETs" IEEE Electron Device Lett., vol. 32, no. 6, pp. 722-724, 2011-06 PDF
  • 73 H. Bae, S. Kim, M.-K. Bae, J. S. Shin, D. Kong, H.-K. Jung, J. Jang, J. Lee, D. H. Kim, and D. M. Kim "Extraction of Separated Source and Drain Resistances in Amorphous Indium-Gallium-Zinc-Oxide TFTs through C-V Characterization" IEEE Electron Device Lett., vol. 32, no. 6, pp. 761-763, 2011-06 PDF
  • 72 J. Lee, J. H. Lee, I.-Y. Chung, C.-J. Kim, B.-G. Park, D. M. Kim, and D. H. Kim "Comparative Study on Energy-Efficiencies of Single-Electron Transistor-Based Binary Full Adders Including Non-Ideal Effects" IEEE Transactions on Nanotechnology., vol. 10, no. 5, pp. 1180-1190, 2011-09 PDF
  • 71 S. Lee, J. S. Shin, J. Jang, H. Bae, D. Yun, D. H. Kim, and D. M. Kim "A Novel Capacitorless DRAM Cell unsing Superlattice Band-gap Engineered(SBE) Structure with 30nm Channel Length" IEEE Transactions on Nanotechnology., vol. 10, no. 5, pp. 1023-1030, 2011-09 PDF
  • 70 J.-H. Park , H.-K. Jung, S. Kim, S. Lee, D. H. Kim, and D. M. Kim "Empirical Modeling and Extraction of Parasitic Resistance in Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors" IEEE Transactions on Electron Devices, vol. 58, no. 8, pp. 2796-2799, 2011-08 PDF
  • 69 S. W. Lee, Y. W. Jeon, S. Kim, D. Kong, D. H. Kim, and D. M. Kim "Comparative Study of Quasi-Static and Normal Capacitance-Voltage Characteristics in Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors" Solid-State Electronics, vol. 56, no. 1, pp. 95-99, 2011-02 PDF
  • 68 E. Chong, Y. W. Jeon, Y. S. Chun, D. H. Kim, and D. M. Kim "Design of Noncoplanar Diagonal Electrode Structure for Oxide Thin-Film Transistor" IEEE Electron Device Letters, vol. 32, no. 1, pp. 39-41, 2011-01 PDF
  • 67 K. Y. Kim, J. M. Jang, D. Y. Yun, D. M. Kim, D. H. Kim "Comparative Study in the Structural Dependence of Logic Gate Delays in Double-Gate and Tripple-Gate FinFETs" Journal of Semiconductor Technology and Science, vol. 10, no. 2, pp. 1385-1388, 2010-06 PDF
  • 66 J. C. Park, S. Kim, S. Kim, C. Kim, I. Song, Y. Park, U.-I. Jung, D. H. Kim and J.-S. Lee "Highly Stable Transparent Amorphous Oxide Semiconductor Thin-Film Transistors Having Double-Stacked Active Layer" Advanced Materials, vol. 22, no.48, pp. 5512-5516, 2010-12 PDF
  • 65 J. C. Park, S. I. Kim, C. J. Kim, S. Kim, D. H. Kim, I.-T. Cho, and H.-I. Kwon "Impact of High-k HfO2 Dielectric on the Low-Frequency Noise Behaviors in Amorphous InGaZnO Thin Film Transistors" Japanese Journal of Applied Physics, vol. 49, no. 10, p. 100205, 2010-10 PDF
  • 64 J. C. Park, S. W. Kim, C. J. Kim, S. Kim, D. H. Kim, I.-T. Cho, and H.-I. Kwon "Low-frequency noise in amorphous indium-gallium-zinc oxide thin-film transistors from subthreshold to saturation" Appl. Phys. Lett., vol. 97, no. 12, pp. 122104, 2010-09 PDF
  • 63 H. Bae, S. C. Baek, S. Lee, J. Jang, J. S. Shin, D. Yun, H. Kim, D. H. Kim, and D. M. Kim "Separate Extraction of Source, Drain, and Substrate Resistances in MOSFETs with Parasitic Junction Current Method" IEEE Electron Device. Letters., vol. 31, no. 11, pp. 1190-1192, 2010-11 PDF
  • 62 Y. W. Jeon, S. Kim, S. Lee, D. M. Kim, D. H. Kim, J. Park, C. J. Kim, I. Song, Y. Park, U-I. Chung, J.-H. Lee, B. D. Ahn, S. Y. Park, J.-H. Park and J. H. Kim "Subgap Density of States-Based Amorphous Oxide Thin Film Transistor Simulator (DeAOTS)" IEEE Transactions on Electron Devices, vol. 57, no. 1, pp. 2988-3000, 2010-11 PDF
  • 61 S. Kim, Y. W. Jeon, J.-H. Lee, B. D. Ahn, S. Y. Park, J.-H. Park, J. H. Kim, J. Park, D. M. Kim, and D. H. Kim "Relation between Low Frequency Noise and Subgap Density of States in Amorphous InGaZnO Thin Film Transistors" IEEE Electron Device. Letters., vol. 31, no. 11, pp. 1236-1238, 2010-11 PDF
  • 60 S. Lee, Y. W. Jeon, T.-J. K. Liu, D. H. Kim, and D. M. Kim "A Novel Self-Aligned 4-Bit SONOS-Type Nonvolatile Memory Cell With T-Gate and I-Shaped FinFET Structure" IEEE Transactions on Electron Devices., vol. 57, no. 8, pp. 1728-1736, 2010-08 PDF
  • 59 K. Y. Kim, J. M. Jang, D. Y. Yun, D. M. Kim, D. H. Kim "Comparitive Study in the Structural Dependence of Logic Gate Delays in Double-Gate and Tripple-Gate FinFETs" Journal of Semiconductor Technology and Science, vol. 10, no. 2, pp. 1385-1388, 2010-06 PDF