Prof. Kim`s R.P.

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  • 81 J.-H. Park, Y. Kim, S. Kim, H. Bae, D. H. Kim, and D. M. Kim "Surface Potential-Based Analytic DC I-V Model with Effective Electron Density for Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors Considering Parastic Resistance" IEEE Electron Device Letters., vol. 32, no. 11, pp. 1540-1542, 2011-11 PDF
  • 80 M. Bae, Y. Kim, D. Kong, H.-K. Jung, W. Kim, J. Kim, I. Hur, D. M. Kim, and D. H. Kim "Analytical Models for Drain Current and Gate Capacitance in Amorphous InGaZnO Thin Film Transistors with Effecitve Carrier Density" IEEE Electron Device Letters., vol. 32, no. 11, pp. 1546-1548, 2011-11 PDF
  • 79 M. Bae, Y. Kim, S. Kim, D. M. Kim, and D. H. Kim "Extraction of Subgap Donor States in a-IGZO TFTs by Generation-Recombination Current Spectroscopy" IEEE Electron Device Lett., vol. 32, no. 9, pp. 1248-1250, 2011-09 PDF
  • 78 D. Yun, M. Bae, J. Jang, H. Bae, J. S. Shin, E. Hong, J. Lee,D. H. Kim, and D. M. Kim "Differential Body Factor Technique for Characterization of Interface Trap in MOSFETs" IEEE Electron Device Lett., vol. 32, no. 9, pp. 1206-1208, 2011-09 PDF
  • 77 J. S. Shin, H. Bae, J. Jang, D. Yun, J. Lee, E. Hong, D. H. Kim, and D. M. Kim "A Novel Double HBT-based Capacitorless 1T DRAM Cell with Si/SiGe Heterojunctions" IEEE Electron Device Lett., vol. 32, no. 7, pp. 850-852, 2011-07 PDF
  • 76 S. Y. Lee, D. H. Kim, E. Chong, Y. W. Jeon, and D. H. Kim "Effect of channel thickness on density of states in amorphous InGaZnO thin film transistor" Applied Physics Letters, vol. 98, no. 12, pp. 1077-3118, 2011-03 PDF
  • 75 E. Chong, Y. W. Jeon, Y. S. Chun, D. H. Kim, and S. Y. Lee "Localization effect of a current-path in amorphous In-Ga-Zn-O thin film transistors with a highly doped buried-layer" Thin Solid Film, vol. 519, no. 13, pp. 4347-4350, 2011-04 PDF
  • 74 H. Bae, J. Jang, J. S. Shin, D. Yun, J. Lee, T. W. Kim, D. H. Kim, and D. M. Kim "Modeling and Separate Extraction of Gate Bias- and Channel Length-Dependent Intrinsic and Extrinsic Source-Drain Resistances in MOSFETs" IEEE Electron Device Lett., vol. 32, no. 6, pp. 722-724, 2011-06 PDF
  • 73 H. Bae, S. Kim, M.-K. Bae, J. S. Shin, D. Kong, H.-K. Jung, J. Jang, J. Lee, D. H. Kim, and D. M. Kim "Extraction of Separated Source and Drain Resistances in Amorphous Indium-Gallium-Zinc-Oxide TFTs through C-V Characterization" IEEE Electron Device Lett., vol. 32, no. 6, pp. 761-763, 2011-06 PDF
  • 72 J. Lee, J. H. Lee, I.-Y. Chung, C.-J. Kim, B.-G. Park, D. M. Kim, and D. H. Kim "Comparative Study on Energy-Efficiencies of Single-Electron Transistor-Based Binary Full Adders Including Non-Ideal Effects" IEEE Transactions on Nanotechnology., vol. 10, no. 5, pp. 1180-1190, 2011-09 PDF
  • 71 S. Lee, J. S. Shin, J. Jang, H. Bae, D. Yun, D. H. Kim, and D. M. Kim "A Novel Capacitorless DRAM Cell unsing Superlattice Band-gap Engineered(SBE) Structure with 30nm Channel Length" IEEE Transactions on Nanotechnology., vol. 10, no. 5, pp. 1023-1030, 2011-09 PDF
  • 70 J.-H. Park , H.-K. Jung, S. Kim, S. Lee, D. H. Kim, and D. M. Kim "Empirical Modeling and Extraction of Parasitic Resistance in Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors" IEEE Transactions on Electron Devices, vol. 58, no. 8, pp. 2796-2799, 2011-08 PDF
  • 69 S. W. Lee, Y. W. Jeon, S. Kim, D. Kong, D. H. Kim, and D. M. Kim "Comparative Study of Quasi-Static and Normal Capacitance-Voltage Characteristics in Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors" Solid-State Electronics, vol. 56, no. 1, pp. 95-99, 2011-02 PDF
  • 68 E. Chong, Y. W. Jeon, Y. S. Chun, D. H. Kim, and D. M. Kim "Design of Noncoplanar Diagonal Electrode Structure for Oxide Thin-Film Transistor" IEEE Electron Device Letters, vol. 32, no. 1, pp. 39-41, 2011-01 PDF
  • 67 K. Y. Kim, J. M. Jang, D. Y. Yun, D. M. Kim, D. H. Kim "Comparative Study in the Structural Dependence of Logic Gate Delays in Double-Gate and Tripple-Gate FinFETs" Journal of Semiconductor Technology and Science, vol. 10, no. 2, pp. 1385-1388, 2010-06 PDF
  • 66 J. C. Park, S. Kim, S. Kim, C. Kim, I. Song, Y. Park, U.-I. Jung, D. H. Kim and J.-S. Lee "Highly Stable Transparent Amorphous Oxide Semiconductor Thin-Film Transistors Having Double-Stacked Active Layer" Advanced Materials, vol. 22, no.48, pp. 5512-5516, 2010-12 PDF
  • 65 J. C. Park, S. I. Kim, C. J. Kim, S. Kim, D. H. Kim, I.-T. Cho, and H.-I. Kwon "Impact of High-k HfO2 Dielectric on the Low-Frequency Noise Behaviors in Amorphous InGaZnO Thin Film Transistors" Japanese Journal of Applied Physics, vol. 49, no. 10, p. 100205, 2010-10 PDF
  • 64 J. C. Park, S. W. Kim, C. J. Kim, S. Kim, D. H. Kim, I.-T. Cho, and H.-I. Kwon "Low-frequency noise in amorphous indium-gallium-zinc oxide thin-film transistors from subthreshold to saturation" Appl. Phys. Lett., vol. 97, no. 12, pp. 122104, 2010-09 PDF
  • 63 H. Bae, S. C. Baek, S. Lee, J. Jang, J. S. Shin, D. Yun, H. Kim, D. H. Kim, and D. M. Kim "Separate Extraction of Source, Drain, and Substrate Resistances in MOSFETs with Parasitic Junction Current Method" IEEE Electron Device. Letters., vol. 31, no. 11, pp. 1190-1192, 2010-11 PDF
  • 62 Y. W. Jeon, S. Kim, S. Lee, D. M. Kim, D. H. Kim, J. Park, C. J. Kim, I. Song, Y. Park, U-I. Chung, J.-H. Lee, B. D. Ahn, S. Y. Park, J.-H. Park and J. H. Kim "Subgap Density of States-Based Amorphous Oxide Thin Film Transistor Simulator (DeAOTS)" IEEE Transactions on Electron Devices, vol. 57, no. 1, pp. 2988-3000, 2010-11 PDF