Prof. Kim`s R.P.

Home > People > Professor > Prof. Kim`s R.P.

  • 10 S. Kim, Y. W. Jeon, S. Lee, D. M. Kim, D. H. Kim, S. W. Kim, S. I. Kim, J. Park, U-I. Chung and C.-J. Kim "Analysis on AC stress-Induced Degradation Mechanism of Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistor Inverters" in SID'10 Dig. Tech. Papers, pp. 1380-1384, 2010-05 PDF
  • 9 S. Lee, S. Kim, Y. W. Jeon, D. M. Kim, D. H. Kim, J.-H. Lee, B. D. Ahn, S. Y. Park, J.-H. Park, J. H. Kim and J. Park "Comparison between a-InGaZnO and a-InHfZnO TFTs in Perspective of Subgap Density of States (DOS) in Active Film" in SID'10 Dig. Tech. Papers, pp. 1389-1392, 2010-05 PDF
  • 8 Y. W. Jeon, S. Kim, S. Lee, D. M. Kim, D. H. Kim, S. W. Kim, S. I. Kim, J. Park, U-I. Chung, C.-J. Kim, J.-H. Lee, B. D. Ahn, S. Y. Park, J.-H. Park, J. H. Kim and J. Park "Subgap Density of States-Based Amorphous Oxide Thin Film Transistor Simulator (DAOTS) for Process Optimization and Circuit Design" in SID'10 Dig. Tech. Papers, pp. 1385-1388, 2010-05 PDF
  • 7 S. Lee, J. Jang, J. Shin, H. Kim, H. Bae, D. Yun, D. H. Kim, and D. M. Kim "A Novel Superlattice Band-Gap Engineered (SBE) Capacitorless DRAM Cell with Extremely Short Channel Length Down to 30 nm" IEEE International Memory Workshop (IMW), 2010-05 PDF
  • 6 S. C. Baek, S. W. Park, H. Y. Bae, J. M. Jang, J. E. Lee, S. Y. Lee, H. R. Jang, H. J. Kim, D. Y. Yun, J. S. Shin, D. H. Kim, and D. M. Kim "Accurate Extraction of Gate Capacitances in Leaky MOS Systems using Modified 3-element circuit Model Combining the Multi-Frequency Capacitance-Voltage Method" The 17th Korean Conference on Semiconductors, 2010-02 PDF
  • 5 Y. W. Jeon, S. Lee, S. Kim, H. Jung, D. Kong, Y. Kim, M. Bae, D. M. Kim, and D. H. Kim "A physical parameter based on DC I-V numerical model of amorphous InGaZnO Thin Film Transistors" The 17th Korean Conference on Semiconductors, 2010-02 PDF
  • 4 D. Kong, S. Lee, Y. Jeon, S. Kim, Y. Kim, H. Jung, M. Bae, D. M. Kim and D. H. Kim "Electrical stress-induced instability of amorphous InGaZnO thin-film transistors under bipolar AC stress" The 17th Korean Conference on Semiconductors, 2010-02 PDF
  • 3 S. Lee, Y. W. Jeon, J. Jang, J. S. Sin, H. J. Kim, H. Y. Bae, D. H. Yun, D. H. Kim, and D. M. Kim "A Novel Self-Aligned 4-bit SONOS-Type Non-Volatile Memory Cell with T-Gate and I-Shaped FinFET Structure and Low Current Sense Amplifier" The 17th Korean Conference on Semiconductors, 2010- PDF
  • 2 S. Lee, S. Park, S. Kim, Y. Jeon, D. Kong, M.-K. Bae, H. K. Jung, Y. S. Kim, D. M. Kim, and D. H. Kim "Subgap Density-of-States Extraction of Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors by Using Multiple Frequency C-V Characteristics" The 17th Korean Conference on Semiconductors, 2010- PDF
  • 1 S. Lee, Y. Jeon, S. Kim, M.-K. Bae, D. Kong, Y. Kim, H. K. Jung, D. M. Kim, and D. H. Kim "Characterization of the C-V Response of Amorphous Indium Gallium Zinc Oxide TFTs" 17th Korean Conference on Semiconductors, 2010- PDF
1