Prof. Kim`s R.P.

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  • 151 H. Kang, J. T. Jang, S.-J. Choi, D. M. Kim, D. H. Kim "Investigation of PBS-induced instability under various stress condition in a-IGZO TFT" 대한전자공학회 하계학술대회, 2015-06 PDF
  • 150 J. Kim, J. Kim, S. Choi, D. M. Kim, S.-J. Choi, D. H. Kim "The Analysis of Instability for Oxygen Flow Rate in Positive Bias Stress on High Gate Voltage or High Drain Voltage in a-IGZO Bottom-gate TFT" 대한전자공학회 하계학술대회, 2015-06 PDF
  • 149 S. Choi, Y. Kang, J. Kim, S.-J. Choi, D. M. Kim, H.-Y. Cha, H. Kim, D. H. Kim "Frequency-dependent C-V Based Extraction of Interface Trap Density in Normally-off Gate-recessed AlGaN/GaN Field-effect Transistors" ICEIC 2015, 2015-02 PDF
  • 148 J.T. Jang, H. Kang, J.H. Kim, S.-J. Choi, D. M. Kim, D. H. Kim "Analysis on the low VGS/high VDS stress-induced instability in amorphous indium-gallium-zinc-oxide thin-film transistors" ICEIC 2015, 2015-02 PDF
  • 147 J. Kim, S. Choi, J. Jang, J. T. Jang, J. Kim, S.-J. Choi, D. M. Kim, and D. H. Kim "Analysis of instability mechanism under simultaneous positive gate and drain bias stress in self-aligned top-gate amorphous indium-zinc-oxide thin-film transistors" The 22st Korean Conference on Semiconductors(KCS 2015), p. 334, 2015-02 PDF
  • 146 S. Choi, Y. Kang, J. Kim, J. Kim, S.-J. Choi, D. M. Kim, H.-Y. Cha, H. Kim., and D. H. Kim "Extraction of Interface Trap Density by using frequency dispersion of C-V in Normally-off Gate-recessed AlGaN/GaN HFET" The 22st Korean Conference on Semiconductors(KCS 2015), p. 28, 2015-02 PDF
  • 145 H. Kang, J. T. Jang, J. Kim, S.-J. Choi, D. M. Kim, and D. H. Kim "Comparative analysis on positive bias stress-induced instability under HVGS and HVDS in amorphous InGaZnO thin-film transistors" The 22st Korean Conference on Semiconductors(KCS 2015), p. 337, 2015-02 PDF
  • 144 H. M. Choi, J. Park, D. J. Shin, B. Choi, S. Kim, H. Mo, D. M. Kim, S.-J. Choi, D. H. Kim "Biosensing comparison between dry and wet environment in silicon nanowire transistor" The 22st Korean Conference on Semiconductors(KCS 2015), 2015-02 PDF
  • 143 J. Choi, Y. Kang, S. Choi, D. H. Kim, H.-Y. Cha, and H. Kim "Extraction of Interface Trap Density Through Differential Subthreshold Ideality Factor Technique in Normally-off AlGaN/GaN MOSHFETs" 제4회 한국광전자학회(The 4th Conference on Korea Society of Optoelectronics), Nov., 2014-11
  • 142 D. H. Kim, J. Jang, K. M. Lee, S. -J. Choi, and D. M. Kim "Subgap Density-of-States (DOS)-based Simulation for Instability-Aware Design of Oxide TFTs" CAD-TFT 2014, 2014-10 PDF
  • 141 J. Yoon, D. Lee, C. Kim, J. Lee, B. Choi, N. Yoder, J. Humes, D. H. Kim, D. M. Kim, M. Lee, Y.-K. Choi, and S.-J. Choi "Highly separated semiconducting carbon nanotube (99.9%) thin-film transistor using printing technology" IMID 2014 DIGEST, p. 568, 2014-08 PDF
  • 140 S. Choi, J. Jang, H. Kim, D. G. Kim, K. M. Lee, J. H. Kim, D. M. Kim, S.-J. Choi, J. C. Park, and D. H. Kim "VGS/VDS Configuration-Dependence of Positive Bias Stress-Induced Instability in Self-Aligned Top-Gate IZO TFTs" IMID 2014 DIGEST, p. 359, 2014-08 PDF
  • 139 J. T. Jang, K. M. Lee, J. Jang, S.-J. Choi, D. M. Kim, and D. H. Kim "The Effect of RF Sputtering Power on Negative Bias Illumination Stress-Induced Instability in Sputtered Amorphous InGaZnO Thin-Film Transistors" IMID 2014 DIGEST, p. 358, 2014-08 PDF
  • 138 J. Jang, S.-J. Choi, D. M. Kim, J.-H. Lim, J.-H. Lee, B. D. Ahn, and D. H. Kim "Negative Bias Illumination Stress-Induced Instability in Amorphous Indium-Tin- Zinc-Oxide TFTs and Its Comparison with Indium-Gallium-Zinc-Oxide TFTs" IMID 2014 DIGEST, p. 199, 2014-08 PDF
  • 137 D. H. Kim, J. Jang, K. M. Lee, S.-J. Choi, and D. M. Kim "Toward instability-aware design of oxide TFTs(Invited)" IMID 2014 DIGEST, p. 198, 2014-08 PDF
  • 136 K. M. Lee, J. T. Jang, J. Jang, S.-J. Choi, D. M. Kim, and D. H. Kim "Negative Bias Illumination Stress Time-Evolution of Subgap States in Amorphous InGaZnO Thin-Film Transistors: Oxygen Vacancy?" IMID 2014 DIGEST, p. 11, 2014-08 PDF
  • 135 J.-W. Park, H. Kim, D. H. Kim, and M. Lee "Study of the improvements in the electrical performance of solution-processed metal oxide thin-film transistors using self-assembled monolayers" SPIE Optics & Photonics 2014, 2014-08 PDF
  • 134 Y. Kang, J.-G. Lee, S. Choi, D. H. Kim, H.-Y. Cha, and H. Kim "Extraction of Interface Trap Density Through Differential Subthreshold Ideality Factor Technique in Normally-off AlGaN/GaN MOSHFETs" Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices(AWAD), Poster, 2014-07 PDF
  • 133 J. Ahn, H. Bae, H. Choi, J. S. Hwang, J. Lee, S.-J. Choi, D. H.Kim, and D. M. Kim "A Novel Characterization Technique for Location of Laterally Distributed Grain Boundary in Polycrystalline Silicon Thin-Film Transistors" The 21st Korean Conference on Semiconductors(KCS 2014), p. 295, 2014-02 PDF
  • 132 J. S. Hwang, H. Bae, H. Choi, J. Ahn, J. Lee, S.-J Choi, D. H. Kim, and D. M. Kim "A Dual Sweep Transfer Curve Technique for Separate Extraction of Source and Drain Resistances in Advanced FETs without Substrate Contacts" The 21st Korean Conference on Semiconductors(KCS 2014), p. 71, 2014-02 PDF