12S.‐J. Choi, J.‐W. Han, C.‐J. Kim, S. Kim, and Y.‐K. Choi"Improvement of the Sensing Window on a Capacitorless 1T‐DRAM of a FinFET‐Based Unified RAM"IEEE Transactions on Electron Devices, Vol. 56 No. 12 pp. 3228–3231, 2009-12
11S. Kim, S.‐J. Choi, and Y.‐K. Choi"Resistive‐Memory Embedded Unified RAM (R‐URAM)"IEEE Transactions on Electron Devices, Vol. 56 No. 11 pp. 2670–2674, 2009-11
10S.‐J. Choi, J.‐W. Han, M. Jang, and Y.‐K. Choi"Analysis of Trapped Charges in Dopant‐Segregated Schottky Barrier‐Embedded FinFET SONOS Devices"IEEE Electron Device Letters, Vol. 30 No. 10 pp. 1084–1086, 2009-10
9S.‐J. Choi, J.‐W. Han, M. Jang, C.‐J. Choi, and Y.‐K. Choi"Characterization of current injection mechanism in Schottky‐barrier metal‐oxide‐semiconductor field‐effect transistors"Applied Physics Letters, Vol. 95 pp. 083502, 2009-08
8S. Kim, S.‐J. Choi, M. Jang, and Y.‐K. Choi"Investigation of the source‐side injection characteristic of a dopant‐segregated Schottky barrier metal‐oxide‐semiconductor field‐effect‐transistor"Applied Physics Letters, Vol. 95 No. 6 pp. 063508, 2009-08
7J.‐W. Han, S.‐W. Ryu, D.‐H. Kim, C.‐J. Kim, S. Kim, D.‐I. Moon, S.‐J. Choi, and Y.‐K. Choi"Fully Depleted Polysilicon TFTs for Capacitorless 1T‐DRAM"IEEE Electron Device Letters, Vol. 30 No. 7 pp. 742–744, 2009-07
6J.‐W. Han, C.‐J. Kim, S.‐J. Choi, D.‐H. Kim, D.‐I. Moon, and Y.‐K. Choi"Gate‐to‐Source/Drain Nonoverlap Device for Soft‐Program Immune Unified RAM (URAM)"IEEE Electron Device Letters, Vol. 30 No. 5 pp. 544– 546, 2009-05
5J.‐W. Han, S.‐W. Ryu, C.‐J. Kim, S.‐J. Choi, S. Kim, J.‐H. Ahn, D.‐H. Kim, K. J. Choi, B. J. Choi, J. S. Kim, K. H. Kim, G. S. Lee, J. S. Oh, M. H. Song, Y. C. Park, J. W. Kim, and Y.‐K. Choi"Energy‐Band‐Engineered Unified‐RAM (URAM) Cell on Buried Si1‐yCy Substrate for Multifunctioning Flash Memory and 1T‐DRAM"IEEE Transactions on Electron Devices, Vol. 56 No. 4 pp. 641–647, 2009-04
4S.‐W. Ryu, J.‐W. Han, C.‐J. Kim, S.‐J. Choi, S. Kim, J. S. Kim, K. H. Kim, J. S. Oh, M. H. Song, G. S. Lee, Y. C. Park, J. W. Kim, and Y.‐K. Choi"Refinement of Unified Random Access Memory"IEEE Transactions on Electron Devices, Vol. 56 No. 4 pp. 601–608, 2009-04
3S.‐J. Choi, J.‐W. Han, M. Jang, J. S. Kim, K. H. Kim, G. S. Lee, J. S. Oh, M. H. Song, Y. C. Park, J. W. Kim, and Y.‐K. Choi"High Injection Efficiency and Low‐Voltage Programming in a Dopant‐Segregated Schottky Barrier (DSSB) FinFET SONOS for NOR‐Type Flash Memory"IEEE Electron Device Letters, Vol. 30 No. 3 pp. 265–268, 2009-03
2J.‐W. Han, S.‐W. Ryu, S.‐J. Choi, and Y.‐K. Choi"Gate‐Induced Drain‐Leakage (GIDL) Programming Method for Soft‐Programming‐Free Operation in Unified RAM (URAM)"IEEE Electron Device Letters, Vol. 30 No. 2 pp. 189–191, 2009-02
1S.‐J. Choi, J.‐W. Han, S. Kim, M. Jang, J. S. Kim, K. H. Kim, G. S. Lee, J. S. Oh, M. H. Song, Y. C. Park, J. W. Kim, and Y.‐K. Choi"Enhancement of Program Speed in Dopant‐Segregated Schottky‐Barrier (DSSB) FinFET SONOS for NAND‐Type Flash Memory"IEEE Electron Device Letters, Vol. 30 No. 1 pp. 78–81, 2009-01