Prof. Choi`s R.P.

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  • 4 J.‐W. Han, S.‐W. Ryu, S.‐J. Choi, and Y.‐K. Choi "Gate‐Induced Drain‐Leakage (GIDL) Programming Method for Soft‐Programming‐Free Operation in Unified RAM (URAM)" IEEE Electron Device Letters, Vol. 30 No. 2 pp. 189–191, 2009-02 PDF
  • 3 S.‐J. Choi, J.‐W. Han, S. Kim, M. Jang, J. S. Kim, K. H. Kim, G. S. Lee, J. S. Oh, M. H. Song, Y. C. Park, J. W. Kim, and Y.‐K. Choi "Enhancement of Program Speed in Dopant‐Segregated Schottky‐Barrier (DSSB) FinFET SONOS for NAND‐Type Flash Memory" IEEE Electron Device Letters, Vol. 30 No. 1 pp. 78–81, 2009-01 PDF
  • 2 J.‐W. Han, S.‐W. Ryu, C.‐J. Kim, S. Kim, M. Im, S.‐J. Choi, J. S. Kim, K. H. Kim, G. S. Lee, J. S. Oh, M. H. Song, Y. C. Park, J. W. Kim, and Y.‐K. Choi "Partially Depleted SONOS FinFET for Unified RAM (URAM)—Unified Function for High‐Speed 1T DRAM and Nonvolatile Memory" IEEE Electron Device Letters, Vol. 29 No. 7 pp. 781–783, 2008-07 PDF
  • 1 J.‐W. Han, S.‐W. Ryu, S. Kim, C.‐J. Kim, J.‐H. Ahn, S.‐J. Choi, J. S. Kim, K. H. Kim, G. S. Lee, J. S. Oh, M. H. Song, Y. C. Park, J. W. Kim, and Y.‐K. Choi "A Bulk FinFET Unified‐RAM (URAM) Cell for Multifunctioning NVM and Capacitorless 1T‐DRAM" IEEE Electron Device Letters, Vol. 29 No. 6 pp. 632–634, 2008-06 PDF