Prof. Choi`s R.P.

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  • 88 H. R. Yu, J. T. Jang, S. Choi, H. Kang, D. Ko, J-.Y. Kim, G. Ahn, J. Lee, S.-J Choi, D. M. Kim, and D. H. Kim* "Influence of active layer thickness on the abnormal output characteristics in amorphous In-Ga-Zn-O TFTs under high current-flowing operation" The 24th Korean Conference on Semiconductors, 2017-02 PDF
  • 87 J. Rhee, S. Choi, H. Kang, J.-Y. Kim, J. T. Jang, D. Ko, S.-J. Choi, D. M. Kim, and D. H. Kim* "TCAD-based analysis on the relationship between the physical parameters in charge trapping and the stretched exponential model parameters in amorphous InGaZnO TFTs under the positive gate bias tempera" The 24th Korean Conference on Semiconductors, 2017-02 PDF
  • 86 S. Choi, J. T. Jang, H. Kang, J.-Y. Kim, D. Ko, J. Rhee, H. R. Yu, J. Park, S.-J. Choi, D. M. Kim, and D. H. Kim* "TCAD-based comparative study on the positive bias stress instability between the single-gate and double-gate structured In-Ga-Zn-O TFTs" The 24th Korean Conference on Semiconductors, 2017-02 PDF
  • 85 H. Jung, S. Choi, J. T. Jang, B. Choi, J. Yoon, J. Lee, Y. Lee, D. M. Kim, S.-J. Choi, and D. H. Kim* "Universal bias stress-induced instability model in the inkjet-printed carbon nanotube network FETs" The 24th Korean Conference on Semiconductors, 2017-02 PDF
  • 84 S. Kim, J. T. Jang, S. Choi, J. Jang, J. Kim, H.-S. Mo, D. M. Kim, S.-J. Choi, and D. H. Kim* "Influence of oxygen-content on the characteristics in amorphous InGaZnO TFT-based Temperature Sensors" The 24th Korean Conference on Semiconductors, 2017-02 PDF
  • 83 J.-Y. Kim, S. Choi, H. Kang, J. T. Jang, D. Ko, J. Rhee, Y. H. Ri, S.-J. Choi, D. M. Kim, and D. H. Kim* "Influence of the oxygen flow rate during sputter deposition on the current stress instability in bottom-gate amorphous InGaZnO Thin-Film Transistors" The 24th Korean Conference on Semiconductors, 2017-02 PDF
  • 82 D. Ko, J. T. Jang, S. Choi, H. Kang, J. Kim, H. R. Yu, G. Ahn, J. Lee, S.-J. Choi, D. M. Kim, and D. H. Kim* "Comparative study on the structural dependence of the sensitivity InGaZnO photosensors" The 24th Korean Conference on Semiconductors, 2017-02 PDF
  • 81 G. Ahn, J. T. Jang, D. Ko, H. Yu, S.-J. Choi, D. M. Kim, and D. H. Kim* "The influence of oxygen-content on the synaptic behavior of InGaZnO memristors for neuromorphic applications" The 24th Korean Conference on Semiconductors, 2017-02 PDF
  • 80 H. Lee, J. Kim, J. Kim, S. K. Kim, S.-J. Choi, D. H. Kim and D. M. Kim* "Characterization of Photo-Responsive Mechanism through Subgap Density-of-States in a-IGZO TFTs for Possible Infrared Light Detection" The 24th Korean Conference on Semiconductors, 2017-02 PDF
  • 79 J. Jang, J. Kim, H.-S. Mo, J. Park, B.-G. Park, S.-J. Choi, D. M. Kim, and D. H. Kim* "Experimental analysis on the setup/hold time in readout condition of Si nanowire FET-based biosensors for detecting ion and/or biomolecule in analyte solution" The 24th Korean Conference on Semiconductors, 2017-02 PDF
  • 78 J. Kim, H. Lee, H. Bae, O. Seok, S.-J. Choi, D. H. Kim, and D. M. Kim "Characterization of Heterojunction Interface Traps in AlGaN/GaN HEMTs through Sub-Bandgap Photonic Response and Subthreshold Ideality Factor" The 24th Korean Conference on Semiconductors, 2017-02 PDF
  • 77 S. K. Kim, J.-P. Shim, D.-M. Geum, C. Z. Kim, H.-S. Kim, Y.-S. Kim, H.-K. Kang, J.-D. Song, S.-J. Choi, D. H. Kim, W. J. Choi, H.-j. Kim, D. M. Kim* and S. H. Kim* "Fabrication of In-Rich(>0.53) InGaAs-OI on Si by Novel Epitaxial Lift-Off" The 24th Korean Conference on Semiconductors, 2017-02 PDF
  • 76 S. K. Kim, J.-P. Shim, D.-M. Geum, C. Z. Kim, H.-S. Kim, Y-S Kim, H.-K. Kang, J.-D. Song, S.-J. Choi, D. H. Kim, W. J. Choi, H.-J Kim, D. M. Kim* and S.-H. Kim* "High-performance In0.53Ga0.47As-OI MOSFET on Si substrates" The 24th Korean Conference on Semiconductors, 2017-02 PDF
  • 75 S. K. Kim, J. Shim, D.-M. Geum, C. Z. Kim, H.-S. Kim, Y.-S. Kim, H.-K. Kang, J. D. Song, S.-J. Choi, D. H. Kim, W. J. Choi, H.-J Kim, D. M. Kim*, S. H. Kim1* (*co-corresponding authors) "Cost-effective Fabrication of In0.53Ga0.47As-on-Insulator on Si for Monolithic 3D via Novel Epitaxial Lift-Off (ELO) and Donor Wafer Re-use" IEEE International Electron Device Meeting (IEDM), 2016-09 PDF
  • 74 D. Lee, B.-H. Lee, J. Yoon, B. Choi, J.-Y. Park, D.-C. Ahn, C.-K. Kim, B.-W. Hwang, S.-B. Jeon, H. J. Ahn, M.-L. Seol, M.-H. Kang, B. J. Cho, S.-J. Choi*, Y.-K. Choi* (*co-corresponding authors) "First Demonstration of a Wrap-Gated CNT-FET with Vertically-Suspended Channels" IEEE International Electron Device Meeting (IEDM), 2016-09 PDF
  • 73 M. Lim, J. Lee, D. H. Kim, D. M. Kim, S. Kim, S.-J. Choi "Comparative Study of Piezoresistance Effect of Semiconducting Carbon Nanotube-Polydimethylsiloxane Nanocomposite Strain Sensor" 16th International Conference on Nanotechnology, 2016-08 PDF
  • 72 H. Kang, J. T. Jang, S. Choi, J.-Y. Kim, D. Ko, S.-J. Choi, D. M. Kim, D. H. Kim "Wavelength-dependence of Persistent Photoconductivity in Zinc Oxynitride Thin-Film-Transistors" IMID 2016 DIGEST, 2016-08 PDF
  • 71 S. Choi, J. Kim, J. Kim, J. T. Jang, H. Kang, J.-Y. Kim, D. Ko, D. M. Kim, S.-J. Choi, J. C. Park, D. H. Kim "Temperature-dependency of the Donor Creation under Positive Gate and Drain Bias Stress in Self-Aligned Top-Gate a-InZnO TFTs" IMID 2016 DIGEST, 2016-08 PDF
  • 70 B. Choi, S. H. Jang, J. Yoon, J. Lee, M. Jeon, Y. Lee, J. Han, J. Lee, D. M. Kim, D. H. Kim, C. Lim, S. Park, S.-J. Choi "Comprehensive evaluation of early retention (fast charge loss within a few seconds) characteristics in tube-type 3-D NAND Flash Memory" Symposium on VLSI Technology Digest of Technical Papers (VLSI), 2016-06 PDF
  • 69 D. Ko, J. T. Jang, Y.-J. Baek, S.-J. Choi, D. M. Kim, C. J. Kang, T.-S. Yoon, H.-S. Mo, D. H. Kim "Effects of ambient and photo-illumination on electrical characteristics in the γ-Fe2O3 nanoparticle assembly-based memristors" The 23st Korean Conference on Semiconductors(KCS 2016), p. 237, 2016-02 PDF