Journal papers

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  • 434 H. Kim, H. Yang, S. Lee, S. Yun, J. Park, S. Park, H. N. Lee, H. Kim, S.-J. Choi, D. H. Kim, D. M. Kim, D. Kwon*, and J.-H. Bae* "Comprehensive analysis of read-after-write latency in HfZrOX-based ferroelectric field-effect-transistors with SiO2 interfacial layer" Applied Physics Letters, Vol.124,Issue.3, doi: 10.1063/5.0172204, 2024-01
  • 433 Y. An, H. Lee, J. Ko, H.-I. Yang, G. Min, D. M. Kim, D. H. Kim, J.-H. Bae, M.-H. Kang, S.-J. Choi "Gate Capacitance Coupling of Double-Gate Carbon Nanotube Network Transistors" ACS Applied Materials & Interfaces, doi: 10.1021/acsami.3c14382., 2024-01
  • 432 J. Park, S. Choi, C. Kim, H. J. Shin, Y. S. Jeong, J. U. Bae, S. Oh, D. H. Kim "Lifetime estimation of thin‑flm transistors in organic emitting diode display panels with compensation" Scientific reports, p.13, DOI: https://doi.org/10.1038/s41598-023-44684-5, 2023-10
  • 431 Y.AN, Y.LEE, D. M. Kim, D. H. Kim, J.-H. Bae, M.-H. Kang, S.-J. Choi "Wafer-scale striped network transistors based on purified semiconducting carbon nanotubes for commercialization" NANOTECHNOLOGY, Vol.34 405202, 2023-07
  • 430 D. Kim, J. T. Jang , W. S. Choi, H. J. Lee, J. T. Jang, E. Hong, W. Y. Yang, M. Choi, K. Y. Yamg, C. S. Lee, J. Woo and and Dae Hwan Kim "Understanding ovonic threshold switching of GeSe chalcogenide materials using electrical methodologies for extracting density of states" Applied. Physics. Letter, , 2023-08
  • 429 J.Y. Park, H. Kim, H. B. Yoo, J. H. Ryu, S. H. Han, J.-H. Bae, S.-J. Choi, D. H. Kim, D. M. Kim " Simultaneous Extraction of Mobility Enhancement Factor and Threshold Voltage With Parasitic Resistances in Amorphous Oxide Semiconductor Thin-Film Transistors" IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol.70 2312 - 2316, 2023-03
  • 428 D. Kim, J. T. Jang , C. Kim , H. W. Kim, E. Hong, S Ban , M. Shin, H. Lee, H. D. Lee, H.-S. Mo, J. Woo and Dae Hwan Kim "Read Disturbance in Cross-Point Phase-Change Memory Arrays—Part I: Physical Modeling With Phase-Change Dynamics" IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol. 70. NO. 2, 2023-02, 2023-02
  • 427 S. J. Myoung, C. I. Ryoo, C. Kim, S.-J. Choi, D. M. Kim, J.-H. Bae, D. H. Kim ""Thermal Process and Dopant Diffusion Model of a-InGaZnO TFTs for VT Prediction Using Lateral Carrier Density Profiling Technique"" IEEE Electron Device Letters, vol. 44, no. 4, pp. 630-633, doi: 10.1109/LED, 2023-04
  • 426 D. Kang, W. Kim, D. Kim, J. T. Jang, C. Kim, J. N. Kim, S.-J. Choi, J.-H. Bae, D. M. Kim, Y. Kim, and D. H. Kim "Short- and Long-Term Memory Based on a Floating-Gate IGZO Synaptic Transistor" IEEE Access, , 2023-02
  • 425 D. Kim, H. J. Lee, T J Yang, W. S. Choi, C. Kim, S.-J. Choi, J.-H. Bae, D. M. Kim, S. Kim, D. H. Kim "Compact SPICE Model of Memristor with Barrier Modulated Considering Short- and Long-Term Memory Characteristics by IGZO Oxygen Content" MDPI: Micromachines , 1630. https://doi.org/10.3390/mi13101630, 2022-09
  • 424 D. Kim, J. T. Jang , C. Kim , H. W. Kim, E. Hong, S Ban , M. Shin, H. Lee, H. D. Lee, H.-S. Mo, J. Woo and Dae Hwan Kim "Read Disturbance in Cross-Point Phase-Change Memory Arrays—Part II: Array Simulations Considering External Currents" IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol. 70. NO. 2, 2023-02
  • 423 S. Choi†, I. Chae†, J. Park, Y. Seo, C. I. Ryoo, D. M. Kim, S.-J. Choi, D.-W. Park*, and D. H. Kim* "Extraction Technique for Flat Band Voltage Using Multi-Frequency C-V Characteristics in Amorphous InGaZnO Thin-Film-Transistors" IEEE Electron Device Letter, doi: 10.1109/LED.2020.3032442, pp. 1778-1781, 2020-10
  • 422 J. Park, S. Choi, C. Kim, H. J. Shin, Y. S. Jeong, J. U. Bae, C. H. Oh, S. Oh, D. H. Kim "Current Boosting of Self-Aligned Top-Gate Amorphous InGaZnO Thin-Film Transistors under Driving Conditions" Advanced Electronic Materials , DOI: 10.1002/aelm.202201109, 2023-01, 2023-01
  • 421 M. Park, H. Lee, G. Lee, S. C. Jang, Y. H. Chang, H. Hong, K.-B. Chung, K. J. Lee, D. H. Kim, H.-S. Kim "Organic/Inorganic Hybrid Top-Gate Transistors with Ultrahigh Electron Mobility via Enhanced Electron Pathways" ACS Applied Materials & Interfaces, DOI: 10.1021/acsami.2c16881, 2022-12, 2022-12
  • 420 T. J. Yang, J.-H. Kim, J. R. Cho, H. J. Lee, K. Kim, J. Park, S.-J. Choi, J.-H. Bae, D. M. Kim, S. Kim, and D. H. Kim "Physical model of a local threshold voltage shift in InGaZnO thin-flim transistors under current stress for instability-aware circuit design" Current Applied Physics, Doi: 10.1016/j.cap.2022.11.011., 2023-02
  • 419 J. Park, S. Choi, S. J. Myoung, J.-Y Kim, C. Kim, S.-J. Choi, D. M. Kim, J.-H. Bae, D. H. Kim "Spatial degradation profiling technique in self-aligned top-gate a-InGaZnO TFTs under current-flowing stress" IEEE Electron Device Letters, DOI: 10.1109/LED.2022.3225838, 2023-01
  • 418 S. Choi†, G. W. Yang†, S. Lee, J. Park, C. Kim, J. Park, H.-S. Choi, N. Lee, G.-J. Kim, Y. Kim, M. Kang, C. Kim, J.-H. Bae, D. H. Kim "Fowler–Nordheim Stress-Induced Degradation of Buried-Channel-Array Transistors in DRAM Cell for Cryogenic Memory Applications" IEEE Transactions on Electron Devices, DOI: 10.1109/TED.2022.3221028, 2022-11
  • 417 T. J. Yang†, J.-H. Kim†, C. I. Ryoo, S. J. Myoung, C. Kim, J. H. Baeck, J.-U Bae, J. Noh, S.-W. Lee, K.-S. Park, J.-J. Kim, S.-Y. Yoon, Y. Kim, D. H. Kim "Analysis of Drain-Induced Barrier Lowering in InGaZnO Thin-Film Transistors" IEEE Transactions on Electron Devices, DOI: 10.1109/TED.2022.3223642, 2022-11
  • 416 D. Kim, J-H Kim, W. S. Choi, T. J. Yang, J. T. Jang, A. Belmonte, N. Rassoul, S. Subhechha, R. Delhougne, G. S. Kar, W. Lee, M. H. Cho, D. Ha, D. H. Kim "Device modeling of two-steps oxygen anneal-based submicron InGaZnO back-end-of-line field-effect transistor enabling short-channel effects suppression" Scientific Reports, DOI: 10.1038/s41598-022-23951-x, 2022-
  • 415 S. Lee†, J. Park†, G. W. Yang, C. Kim, S.-J. Choi, D. M. Kim, J.-H. Bae*, D. H. Kim* (†These authors are co-first authors) "Analysis of a-InGaZnO TFT Threshold Voltage Instability and Mobility Boosting by Current Stress at a Cryogenic Temperature" IEEE Electron Device Letters, DOI: 10.1109/LED.2022.3221537, 2022-