Journal papers

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  • 19 M.-L. Seol, H. Im, D.-I. Moon, J.-H. Woo, D. Kim, S.-J. Choi, and Y.-K. Choi "Design Strategy for a Piezoelectric Nanogenerator with a Well-Ordered Nanoshell Array" ACS nano, vol. 7, no. 12, pp. 10773-10779, 2013-12 PDF
  • 18 J. Lee, S. Jun, J. Jang, H. Bae, H. Kim, J. W. Chung, S.-J. Choi, D. H. Kim, J. Lee, and D. M. Kim "Fully Transfer Characteristic-based Technique for Surface Potential and Subgap Density-of-States in p-Channel Polymer-based TFTs" IEEE Electron Device Letters, vol. 34, no. 12, pp. 1521-1523, 2013-11 PDF
  • 17 M. Bae, K. M. Lee, E.-S. Cho, H.-I. Kwon, D. M. Kim, and D. H. Kim "Analytical Current and Capacitance Models for Amorphous Indium-Gallium-Zinc-Oxide" IEEE Transactions on Electron Devices, vol. 60, no. 10, pp. 3465-3473, 2013-10 PDF
  • 16 S. Kim, J. C. Park, D. H. Kim, and J.-S. Lee "Effects of Hf Incorporation on Negative Bias-Illumination Stress Stability in Hf–In–Zn–O Thin-Film Transistors" J. Appl. Phys , vol. 52, p. 041701, 2013-05 PDF
  • 15 D. H. Kim, H. K. Jung, W. Yang, D. H. Kim, and S. Y. Lee "Investigation on mechanism for instability under drain current stress in amorphous Si–In–Zn–O thin-film transistors"" Thin Solid Films, vol. 527, pp. 314-317, 2013-01, 2013-01 PDF
  • 14 I. Nam, B. Hong, M. Kim, J. Shin, I. Song, D. M. Kim, S. Hwang, and S. Kim "Capacitive coupling model and extraction of the molecular interface states in porphyrin-silicon nanowire hybrid field-effect transistor" Applied Physics Letters, vol. 103, p. 233104, 2013-12 PDF
  • 13 H. Bae, H. Choi, S. Jun, C. Jo, Y. H. Kim, J. S. Hwang, J. Ahn, S. Oh, J.-U. Bae, S.-J. Choi, D. H. Kim, and D. M. Kim "Single Scan Monochromatic Photonic Capacitance -Voltage Technique for Extraction of Subgap DOS over the Bandgap in Amorphous Semiconductor TFTs" IEEE Electron Device Letters, vol. 34, no. 12, pp. 1524-1526, 2013-09 PDF
  • 12 J. Kim, J. Jang, M. Bae, J. Lee, W. Kim, I. Hur, H. K. Jeong, D. M. Kim, and D. H. Kim "Characterization of Density-of-States in Polymer-based Organic Thin Film Transistors and Implementation into TCAD Simulator" Journal of Semiconductor Technology and Science, vol. 13, no. 1, pp. 43-47, 2013-02 PDF
  • 11 J.-Y. Noh, H. Kim, H.-H. Nahm, Y.-S. Kim, D. H. Kim, B.-D. Ahn, J.-H. Lim, G. H. Kim, J.-H. Lee, and J. Song "Cation composition effects on electronic structures of In-Sn-Zn-O amorphous semiconductors" J. Appl. Phys., vol. 113, p. 183706, 2013-05 PDF
  • 10 J. Lee, J. W. Chung, J. Jang, D. H. Kim, J.-I. Park, E. Lee, B.-L. Lee, J. Y. Kim, J. Y. Jung, J. S. Park, B. Koo, Y. W. Jin, and D. H. Kim "Influence of alkyl side-chain on the crystallinity and trap density of states in thiophene and thiazole semiconducting copolymer based inkjet-printed field-effect transistors" Chemistry of Materials, vol. 25, pp. 1927-1934, 2013-04 PDF
  • 9 S.H. Kim, D.-I. Moon, W. Lu, D. H. Kim, D. M. Kim, Y.-K. Choi, and S.‐J. Choi "Latch-up based bidirectional npn selector for bipolar resistance-change memory" Applied Physics Letters, vol. 103, p. 033505, 2013-07 PDF
  • 8 S. Jun, C. Jo, H. Bae, H. Choi, D. H. Kim, and D. M. Kim "Unified Subthreshold Coupling Factor Technique for Surface Potential and Subgap Density-of-States in Amorphous Thin Film Transistors" IEEE Electron Device Letters, vol. 34, no. 5, pp. 641-643, 2013-05 PDF
  • 7 C. Jo, S. Jun, W. Kim, I. Hur, H. Bae, S.-J. Choi, D. H. Kim, and D. M. Kim "Characterization of density-of-states and parasitic resistance in a-InGaZnO thin-film transistors after negative bias stress" Appl. Phys. Letters, vol. 102, issue. 5, p. 143502, 2013-04 PDF
  • 6 I. Hur, H. Bae, W. Kim, J. Kim, H. K. Jeong, C. Jo, S. Jun, J. Lee, Y. H. Kim, D. H. Kim, and D. M. Kim "Characterization of Intrinsic Field-Effect Mobility in TFTs by De-Embedding the Effect of Parasitic Source and Drain Resistances" IEEE Electron Device Letters, vol. 34, no. 2, pp. 250-252, 2013-02 PDF
  • 5 J. Lee, J.-M. Lee, J. H. Lee, M. Uhm, W. H. Lee, S. Hwang, I.-Y. Chung, B.-G. Park, D. M. Kim, Y. -J. Jeong,and D. H. Kim "SiNW-CMOS Hybrid Common-Source Amplifier as a Voltage-Readout Hydrogen Ion Sensor" IEEE Electron Device Letters, vol. 34, no. 1, pp. 135-137, 2013-01 PDF
  • 4 H. Bae, H. Choi, S. Oh, D. H. Kim, J. Bae, J. Kim, Y. H. Kim, and D. M. Kim "Extraction Technique for Intrinsic Subgap DOS in a-IGZO TFTs by De-Embedding the Parasitic Capacitance Through the Photonic C-V Measurement" IEEE Electron Device Letters, vol. 34, no. 1, pp. 57-59, 2013-01 PDF
  • 3 J.‐H. Ahn, J.‐Y. Kim, M.‐L. Seol, D. J. Baek, Z. Guo, C.‐H. Kim, S.‐J. Choi, and Y.‐K. Choi "A pH sensor with a double‐gate silicon nanowire field‐effect transistor" Applied Physics Letters, vol. 102 no. 8 pp. 083701, 2013-02 PDF
  • 2 J. P. Duarte, S.‐J. Choi, D.‐I. Moon, J.‐H. Ahn, J.‐Y. Kim, S. Kim, and Y.‐K. Choi "A Universal Core Model for Multiple‐Gate Field‐Effect Transistors. Part II: Drain Current Model" IEEE Transactions on Electron Devices, vol. 60 no. 2 pp. 848–855, 2013-02 PDF
  • 1 J. P. Duarte, S.‐J. Choi, D.‐I. Moon, J.‐H. Ahn, J.‐Y. Kim, S. Kim, and Y.‐K. Choi "A Universal Core Model for Multiple‐Gate Field‐Effect Transistors. Part I: Charge Model" IEEE Transactions on Electron Devices, vol. 60 no. 2 pp. 840–847, 2013-02 PDF
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