Journal papers

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  • 110 M. Seol, S.‐J. Choi, C. Kim, D.‐I. Moon, and Y.‐K. Choi "Porphyrin‐Silicon Hybrid Field Effect Transistor with Individually Addressable Top‐gate Structure" ACS nano, vol. 6 no. 1 pp. 183–189, 2012-06 PDF
  • 109 H. T. Kim, I. C. Nam, K. S. Kim, K. H. Kim, J. B. Choi, J. U. Lee, S. W. Kim, G. C. Kang, D. J. Kim, K. S. Min, D. W. Kang, and D. M. Kim "Extraction of source and drain resistances in MOSFETs using parasitic bipolar junction transistor" Electronics Lett., vol. 41, no. 13, pp. 772-774, 2005-06 PDF
  • 108 M. Lim, S.‐J. Choi, G.‐S. Lee, M. Seol, Y. Do, Y.‐K. Choi, and H. Han "Terahertz time‐domain spectroscopy of anisotropic complex conductivity tensors in silicon nanowire films" Applied Physics Letters, vol. 100 no. 21 pp. 211102, 2012-05 PDF
  • 107 I. C. Nam, H. T. Kim, K. S. Kim, K. H. Kim, J. B. Choi, J. U. Lee, S. W. Kim, G. C. Kang, D. J. Kim, K. S. Min, D. W. Kang, and D. M. Kim "Modeling of the Substrate Current and Characterization of Traps in MOSFETs under Sub-Bandgap Photonic Excitation" J. of the Korean Phys. Soc., vol. 45, no. 5, pp. 1283-1287, 2004-11 PDF
  • 106 J. P. Duarte, M.‐S. Kim, S.‐J. Choi, and Y.‐K. Choi "A Compact Model of Quantum Electron Density at the Subthreshold Region for Double‐Gate Junctionless Transistors" IEEE Transactions on Electron Devices, vol. 59 no. 4 pp. 1008–1012, 2012-04 PDF
  • 105 Y. S. Yu, D. H. Kim, J. D. Lee, B.-G. Park, S. W. Hwang, and D. Ahn "Transport Spectroscopy of A Quantum Dot in a Silicon-on-Insulator (SOI) MOSFET" Journal of Korean Physical Society, vol. 50, no. 3, pp. 885-888, 2007-03 PDF
  • 104 D. J. Baek, M.‐L. Seol, S.‐J. Choi, D.‐I. Moon, and Y.‐K. Choi "Nonvolatile memory with graphene oxide as a charge storage node in nanowire field‐effect transistors" Applied Physics Letters, vol. 100 no. 9 pp. 093106, 2012-02 PDF
  • 103 T. E. Kim, H. T. Kim, H. T. Shin, H. S. Park, K. S. Kim, I. C. Nam, K. H. Kim, J. B. Choi, J. U. Lee, S. W. Kim, G. C. Kang, D. J. Kim, K. S. Min, D. W. Kang, and D. M. Kim "Sub-Bandgap Photonic Gated-Diode Method for Extracting the Distribution of Hot-Carrier-Induced Interface States in MOSFETs" J. of the Korean Phys. Soc., vol. 44, no. 6, pp. 1479-1484, 2004-06 PDF
  • 102 J. P. Duarte, S.‐J. Choi, D.‐I. Moon, and Y.‐K. Choi "A Nonpiecewise Model for Long‐Channel Junctionless Cylindrical Nanowire FETs" IEEE Electron Device Letters, vol. 33 no. 2 pp. 2011–2013, 2012-02 PDF
  • 101 H. T. Shin, K. H. Kim, K. S. Kim, I. C. Nam, J. B. Choi, J. U. Lee, S. W. Kim, H. T. Kim, T. E. Kim, H. S. Park, G. C. Kang, D. J. Kim, K. S. Min, D. W. Kang, and D. M. Kim "Sub-Bandgap Photonic Base Current Method for Characterization of Interface States at Heterointerfaces in Heterojunction Bipolar Transistors" J. of the Korean Phys. Soc., vol. 44, no. 6, pp. 1485-1489, 2004-06 PDF
  • 100 J.‐Y. Kim, J.‐H. Ahn, S.‐J. Choi, M. Im, S. Kim, J. P. Duarte, C.‐H. Kim, T. J. Park, S. Y. Lee, and Y.‐K. Choi "An Underlap Channel‐Embedded Field‐Effect Transistor for Biosensor Application in Watery and Dry Environment" IEEE Transactions on Nanotechnology, vol. 11 no. 2 pp. 390–394, 2012-02 PDF
  • 99 K. R. Kim, D. H. Kim, K.-W. Song, G. Baek, H. H. Kim, J. I. Huh, J. D. Lee, and B. G. Park "Silicon-Based Field-Induced Band-to-band Tunneling Effect Transistor" IEEE Electron Device Letters, vol. 25, no. 6, pp. 439-441, 2004-06 PDF
  • 98 S. Kim, S.‐J. Choi, D.‐I. Moon, and Y.‐K. Choi "Carrier Lifetime Engineering for Floating‐Body Cell Memory" IEEE Transactions on Electron Devices on Electron Devices, vol. 59 no. 2 pp. 367–373, 2012-02 PDF
  • 97 K. R. Kim, K.-W. Song, D. H. Kim, G. Baek, H. H. Kim, J. I. Huh, J. D. Lee, B.-G. Park "Analytical Modeling of Realistic Single-Electron Transistors Based on Metal-Oxide-Semiconductor Structure with a Unique Distribution Function in the Coulomb-Blockade Oscillation Region" Jpn. J. Appl. Phys., vol. 43, pp. 2031-2035, part 1, no. 4b, 2004-04 PDF
  • 96 K. R. Kim, D. H. Kim, J. D. Lee, B.-G. Park "Coulomb Oscillations Based on Band-to-band Tunneling in a Degenerately Doped Silicon Metal-Oxide-Semiconductor Field-Effect Transistor" Appl. Phys. Lett., vol. 84, no. 16, pp. 3178~3180, 2004-04 PDF
  • 95 M. Seol, S.‐J. Choi, D. Baek, T. J. Park, J.‐H. Ahn, S. Y. Lee, and Y.‐K. Choi "A nanoforest structure for practical surface‐enhanced Raman scattering substrates" Nanotechnology, vol. 23 pp. 095301, 2012-02 PDF
  • 94 C.‐J. Kim, S.‐J. Choi, J.‐H. Ahn, J.‐W. Han, H. Kim, S. Yoo, and Y.‐K. Choi "Photoactive memory by a Sinanowire field‐effect transistor" ACS nano, vol. 6 no. 2 pp. 1449–1454, 2012-01 PDF
  • 93 K.-W. Song, K. R. Kim, J. D. Lee, B.-G. Park, S.-H. Lee, and D. H. Kim "A SPICE Model of Realistic Single-Electron Transistors and Its Application to Multiple-Valued Logic" Journal of Korean Physical Society, vol. 44, no. 1, pp. 121-124, 2004-01 PDF
  • 92 S. Kim, S.‐J. Choi, D.‐I. Moon, and Y.‐K. Choi "A New Charge‐Pumping Technique for a Pulsed Drain Current Transients" IEEE Transactions on Electron Devices, vol. 59 no. 1 pp. 241–246, 2012-01 PDF
  • 91 M. S. Kim, I. C. Nam, H. T. Kim, H. T. Shin, T. E. Kim, H. S. Park, K. S. Kim, K. H. Kim, J. B. Choi, K. S. Min, D. J. Kim, D. W. Kang, and D. M. Kim "Optical Subthreshold Current Method for Extracting the Interface States in MOS Systems" IEEE Electron Device Lett., vol. 25, no. 2, pp. 101-103, 2004-02 PDF