Journal papers

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  • 117 S. Lee, K.-C. Jeon, J.-U. Lee, S.-W. Kim, S.-H. Seo, K.-S. Roh, G.-C. Kang, K.-Y. Kim, C.-M. Choi, K.-J. Song, S.-R. Park, J.-H. Park, D.-M. Kim, and D.-H. Kim "Optical charge pumping technique for extracting interface states of nano-scale SONOS flash memories" J. of the Korean Phys. Soc., vol. 51, no. 6, pp. 2063-2068, 2007-12
  • 116 D. H. Kim "Coupled parallel quantum dots in silicon-on-insulator metal-oxide-semiconductor field-effect transistors" Physica E, vol. 33, pp. 273-279, 2006-03
  • 115 M.‐L. Seol, S.‐J. Choi, J.‐M. Choi, J.‐H. Ahn, and Y.‐K. Choi "Hybrid porphyrin‐silicon nanowire field‐effect transistor by opto‐electrical excitation" ACS nano, vol. 6 no. 9 pp. 7885–7892, 2012-08
  • 114 M. Kim, S.‐J Choi, D. Moon, J. P. Duarte, S. Kim, and Y. Choi "Investigation of gate length and fringing field effects for program and erase efficiency in gate-all-around SONOS memory cells" Solid‐State Electronics, vol. 79 pp. 7–10, 2012-07
  • 113 J. B. Choi, S. H. Seo, J. U. Lee, G. C. Kang, S. W. Kim, K. S. Roh, K. Y. Kim, C. H. Lee, S. Y. Lee, H. T. Kim, D. H. Kim, K. S. Min, D. J. Kim, D. W. Kang, J. K. Rhee, and D. M. Kim "Sub-bandgap Optical GIDL Current Method for Extracting the Interface States in the Gate-to-Drain Overlapped Region of MOSFETs" J. of the Korean Phys. Soc., vol. 49, no. 4, pp. 1565-1570, 2006-10
  • 112 S. W. Kim, J. U. Lee, G. C. Kang, K. S. Roh, S. H. Seo, K. Y. Kim, C. H. Lee, S. Y. Lee, H. T. Kim, D. H. Kim, K. S. Min, D. J. Kim, D. W. Kang, J. K Rhee, and D. M. Kim "Sub-Bandgap Photonic Base Current Method for Extracting the Trap Density at Heterointerfaces in Heterojunction Bipolar Transistors" J. of the Korean Phys. Soc., vol. 49, no. 4, pp. 1558-1564, 2006-10
  • 111 S.‐J. Choi, D.‐I. Moon, J. P. Duarte, J.‐H. Ahn, and Y.‐K. Choi "Physical Observation of a Thermo‐Morphic Transition in a Silicon Nanowire" ACS nano, vol. 6 no. 3 pp. 2378–2384, 2012-06
  • 110 M. Seol, S.‐J. Choi, C. Kim, D.‐I. Moon, and Y.‐K. Choi "Porphyrin‐Silicon Hybrid Field Effect Transistor with Individually Addressable Top‐gate Structure" ACS nano, vol. 6 no. 1 pp. 183–189, 2012-06
  • 109 H. T. Kim, I. C. Nam, K. S. Kim, K. H. Kim, J. B. Choi, J. U. Lee, S. W. Kim, G. C. Kang, D. J. Kim, K. S. Min, D. W. Kang, and D. M. Kim "Extraction of source and drain resistances in MOSFETs using parasitic bipolar junction transistor" Electronics Lett., vol. 41, no. 13, pp. 772-774, 2005-06
  • 108 M. Lim, S.‐J. Choi, G.‐S. Lee, M. Seol, Y. Do, Y.‐K. Choi, and H. Han "Terahertz time‐domain spectroscopy of anisotropic complex conductivity tensors in silicon nanowire films" Applied Physics Letters, vol. 100 no. 21 pp. 211102, 2012-05
  • 107 I. C. Nam, H. T. Kim, K. S. Kim, K. H. Kim, J. B. Choi, J. U. Lee, S. W. Kim, G. C. Kang, D. J. Kim, K. S. Min, D. W. Kang, and D. M. Kim "Modeling of the Substrate Current and Characterization of Traps in MOSFETs under Sub-Bandgap Photonic Excitation" J. of the Korean Phys. Soc., vol. 45, no. 5, pp. 1283-1287, 2004-11
  • 106 J. P. Duarte, M.‐S. Kim, S.‐J. Choi, and Y.‐K. Choi "A Compact Model of Quantum Electron Density at the Subthreshold Region for Double‐Gate Junctionless Transistors" IEEE Transactions on Electron Devices, vol. 59 no. 4 pp. 1008–1012, 2012-04
  • 105 Y. S. Yu, D. H. Kim, J. D. Lee, B.-G. Park, S. W. Hwang, and D. Ahn "Transport Spectroscopy of A Quantum Dot in a Silicon-on-Insulator (SOI) MOSFET" Journal of Korean Physical Society, vol. 50, no. 3, pp. 885-888, 2007-03
  • 104 D. J. Baek, M.‐L. Seol, S.‐J. Choi, D.‐I. Moon, and Y.‐K. Choi "Nonvolatile memory with graphene oxide as a charge storage node in nanowire field‐effect transistors" Applied Physics Letters, vol. 100 no. 9 pp. 093106, 2012-02
  • 103 T. E. Kim, H. T. Kim, H. T. Shin, H. S. Park, K. S. Kim, I. C. Nam, K. H. Kim, J. B. Choi, J. U. Lee, S. W. Kim, G. C. Kang, D. J. Kim, K. S. Min, D. W. Kang, and D. M. Kim "Sub-Bandgap Photonic Gated-Diode Method for Extracting the Distribution of Hot-Carrier-Induced Interface States in MOSFETs" J. of the Korean Phys. Soc., vol. 44, no. 6, pp. 1479-1484, 2004-06
  • 102 J. P. Duarte, S.‐J. Choi, D.‐I. Moon, and Y.‐K. Choi "A Nonpiecewise Model for Long‐Channel Junctionless Cylindrical Nanowire FETs" IEEE Electron Device Letters, vol. 33 no. 2 pp. 2011–2013, 2012-02
  • 101 H. T. Shin, K. H. Kim, K. S. Kim, I. C. Nam, J. B. Choi, J. U. Lee, S. W. Kim, H. T. Kim, T. E. Kim, H. S. Park, G. C. Kang, D. J. Kim, K. S. Min, D. W. Kang, and D. M. Kim "Sub-Bandgap Photonic Base Current Method for Characterization of Interface States at Heterointerfaces in Heterojunction Bipolar Transistors" J. of the Korean Phys. Soc., vol. 44, no. 6, pp. 1485-1489, 2004-06
  • 100 J.‐Y. Kim, J.‐H. Ahn, S.‐J. Choi, M. Im, S. Kim, J. P. Duarte, C.‐H. Kim, T. J. Park, S. Y. Lee, and Y.‐K. Choi "An Underlap Channel‐Embedded Field‐Effect Transistor for Biosensor Application in Watery and Dry Environment" IEEE Transactions on Nanotechnology, vol. 11 no. 2 pp. 390–394, 2012-02
  • 99 K. R. Kim, D. H. Kim, K.-W. Song, G. Baek, H. H. Kim, J. I. Huh, J. D. Lee, and B. G. Park "Silicon-Based Field-Induced Band-to-band Tunneling Effect Transistor" IEEE Electron Device Letters, vol. 25, no. 6, pp. 439-441, 2004-06
  • 98 S. Kim, S.‐J. Choi, D.‐I. Moon, and Y.‐K. Choi "Carrier Lifetime Engineering for Floating‐Body Cell Memory" IEEE Transactions on Electron Devices on Electron Devices, vol. 59 no. 2 pp. 367–373, 2012-02