Journal papers

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  • 66 S.‐J. Choi, T.‐H. Kwon, H. Im, D.‐I. Moon, D. J. Baek, M.‐L. Seol, J. P. Duarte, and Y.‐K. Choi "A Polydimethylsiloxane (PDMS) Sponge for the Selective Absorption of Oil from Water" ACS Applied Materials and Interfaces, vol. 3 pp. 4552–4556, 2011-03 PDF
  • 65 S.-H. Lee, D. H. Kim, K. R. Kim, J. D. Lee, B.-G. Park, Y.-J. Gu, G.-Y. Yang, and J.-T. Kong "A Practical SPICE Model Based on the Physics and Characteristics of Realistic Single-Electron Transistors" IEEE Transactions on Nanotechnology, vol. 1, no. 4, pp. 226-232, 2002-12 PDF
  • 64 D. H. Kim, S.-K. Sung, K. R. Kim, J. D. Lee, B.-G. Park, B. H. Choi, S. W. Hwang and D. Ahn "Single-Electron Transistors with Sidewall Depletion Gates on an SOI Nanowire and Their Application to Single-Electron Inverters" Journal of The Korean Physical Society, vol. 41, no. 4, pp. 505-508, 2002-10 PDF
  • 63 S.‐J. Choi, D.‐I. Moon, S. Kim, J. P. Duarte, and Y.‐K. Choi "Sensitivity of Threshold Voltage to Nanowire Width Variation in Junctionless Transistors" IEEE Electron Device Letters, vol. 32 no. 2 pp. 2010–2012, 2011-02 PDF
  • 62 K. R. Kim, D. H. Kim, S.-K. Sung, J. D. Lee, and B.-G. Park "Negative-Differential Transconductance Characteristics at Room Temperature in 30-nm Square-Channel SOI nMOSFETs With a Degenerately Doped Body" IEEE Electron Device Letters, vol. 23, no. 10, pp. 612-614, 2002-10 PDF
  • 61 S.‐J. Choi, C.‐J. Choi, J.‐Y. Kim, M. Jang, and Y.‐K. Choi "Analysis of Transconductance (gm) in Schottky‐ Barrier MOSFETs" IEEE Transactions on Electron Devices, vol. 58 no. 2 pp. 427–432, 2011-02 PDF
  • 60 C.‐J. Kim, S.‐J. Choi, S. Kim, J.‐W. Han, H. Kim, S. Yoo, and Y.‐K. Choi "Photoinduced Memory with Hybrid Integration of an Organic Fullerene Derivative and an Inorganic Nanogap‐Embedded Field‐Effect Transistor for Low‐Voltage Operation" Advanced Materials, vol. 23 no. 29 pp. 3326–3331, 2011-01 PDF
  • 59 D. H. Kim, S.-K. Sung, K. R. Kim, J. D. Lee, and B.-G. Park "Fabrication of single-electron tunneling transistors with an electrically formed Coulomb island in a silicon-on-insulator nanowire" J. Vac. Sci. Technol. B., vol. 20, issues 4, pp. 1410-1418, 2002-07 PDF
  • 58 B. H. Choi, S. H. Son, K. H. Cho, S.W. Hwang, D. Ahn, D. H. Kim, J. D. Lee, B. G. Park "Direct observation of excited states in double quantum dot silicon single electron transistor" Microelectronic Engineering, vol. 63, issues 1-3, pp. 129-133, 2002-07 PDF
  • 57 S. Kim, S.‐J. Choi, and Y.‐K. Choi "Interface‐Trap Analysis by an Optically Assisted Charge‐Pumping Technique in a Floating‐Body Device" IEEE Electron Device Letters, vol. 32 no. 1 pp. 84–86, 2011-01 PDF
  • 56 J.‐M. Choi, J.‐W. Han, S.‐J. Choi, and Y.‐K. Choi "Analytical Modeling of a Nanogap‐Embedded FET for Application as a Biosensor" IEEE Transactions on Electron Devices, vol. 57 no. 12 pp. 3477–3484, 2010-12 PDF
  • 55 K.-H. Chung, S.-K. Sung, D. H. Kim, W. Y. Choi, C. A. Lee, J. D. Lee and B.-G. Park "Nanoscale Multi-Line Patterning Using Sidewall Structure" Jpn. J. Appl. Phys., vol. 41, pp. 4410-4414, part 1, no. 6b, 2002-06 PDF
  • 54 S. Kim, S.‐J. Choi, and Y. Choi "Optically Assisted Charge Pumping on Floating‐Body FETs" IEEE Electron Device Letters, vol. 31 no. 12 pp. 1365–1367, 2010-12 PDF
  • 53 B. H. Choi, Y. S. Yu, D. H. Kim, S. H. Son, K. H. Cho, S. W. Hwang, D. Ahn, and B. G. Park "Double-dot-like charge transport through a small size silicon single electron transistor" Physica E, vol. 13, pp. 946-949, 2002-03 PDF
  • 52 D. H. Kim, K. R. Kim, S. K. Sung, J. D. Lee, and B.-G. Park "Dynamic exclusive-OR gate based on gate-induced Si island single electron transistor" IEE Electronics Letters, vol. 38, no. 11, pp. 527~529, 2002-05 PDF
  • 51 S.‐J. Choi, J.‐W. Han, S. Kim, D.‐I. Moon, M. Jang, and Y.‐K. Choi "Dopant‐Segregated Schottky Source/Drain FinFET with a NiSi FUSI Gate and Reduced Leakage Current" IEEE Transactions on Electron Devices, vol. 57 no. 11 pp. 2902–2906, 2010-11 PDF
  • 50 J.‐H. Ahn, S.‐J. Choi, J.‐W. Han, T. J. Park, S. Y. Lee, and Y.‐K. Choi "Double‐Gate Nanowire Field Effect Transistor for a Biosensor" Nano letters, vol. 10 no. 8 pp. 2934–2938, 2010-10 PDF
  • 49 S.-K. Sung, D. H. Kim, J.-S. Sim, K. R. Kim, Y. K. Lee, J. D. Lee, S. D. Chae, B. M. Kim, and B.-G. Park "Single-Electron MOS Memory with a Defined Quantum Dot Based on Conventional VLSI Technology" Jpn. J. Appl. Phys., vol. 41, part 1, no. 4b, pp. 2606-2610, 2002-04 PDF
  • 48 D.‐I. Moon, S.‐J. Choi, J.‐W. Han, S. Kim, and Y.‐K. Choi "Fin‐Width Dependence of BJT‐Based 1T‐DRAM Implemented on FinFET" IEEE Electron Device Letters, vol. 31 no. 9 pp. 909–911, 2010-09 PDF
  • 47 K. R. Kim, D. H. Kim, S.-K. Sung, J. D. Lee, B.-G. Park, B. H. Choi, S. W. Hwang, and D. Ahn "Single-Electron Transistors with Sidewall Depletion Gates on a Silicon-On-Insulator Nano-Wire" Jpn. J. Appl. Phys., vol. 41, part 1, no. 4b, pp. 2574-2577, 2002-04 PDF