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  • 10 S.‐J. Choi, J.‐W. Han, M. Jang, J. S. Kim, K. H. Kim, G. S. Lee, J. S. Oh, M. H. Song, Y. C. Park, J. W. Kim, and Y.‐K. Choi "High Injection Efficiency and Low‐Voltage Programming in a Dopant‐Segregated Schottky Barrier (DSSB) FinFET SONOS for NOR‐Type Flash Memory" IEEE Electron Device Letters, vol. 30 no. 3 pp. 265–268, 2009-03 PDF
  • 9 D. H. Kim, D. H. Chae, J. D. Lee, B. G. Park, and H.-G. Lee "Silicon Single Electron Transistors with a Dual Gate Structure" J. Korean Physical Society, vol. 33, pp. s278-s282, 1998-11 PDF
  • 8 J.‐W. Han, S.‐W. Ryu, S.‐J. Choi, and Y.‐K. Choi "Gate‐Induced Drain‐Leakage (GIDL) Programming Method for Soft‐Programming‐Free Operation in Unified RAM (URAM)" IEEE Electron Device Letters, vol. 30 no. 2 pp. 189–191, 2009-02 PDF
  • 7 H. J. Kim, D. M. Kim, S. H. Kim, J. I. Lee, K. N. Kang, and K. Cho "Effects of Light on the InGaP/GaAs/ InGaAs P-Channel Double Heterojunction Pseudomorphic MODFET" Japan. J. of App. Phys., vol. 37, no.3b (part 2), pp. l322-l324, 1998-03 PDF
  • 6 J. Jo, Y. I. Choi, D. M. Kim, K. Alt, and K. L. Wang "Observation of Resonances by Individual Energy Levels in InGaAs/AlAs Triple Barrier Resonant Tunneling Diodes" Japan. J. of Appl. Phys., vol. 37, no. 3b (part 1), pp. 1654-1656, 1998-03 PDF
  • 5 S.‐J. Choi, J.‐W. Han, S. Kim, M. Jang, J. S. Kim, K. H. Kim, G. S. Lee, J. S. Oh, M. H. Song, Y. C. Park, J. W. Kim, and Y.‐K. Choi "Enhancement of Program Speed in Dopant‐Segregated Schottky‐Barrier (DSSB) FinFET SONOS for NAND‐Type Flash Memory" IEEE Electron Device Letters, vol. 30 no. 1 pp. 78–81, 2009-01 PDF
  • 4 J.‐W. Han, S.‐W. Ryu, C.‐J. Kim, S. Kim, M. Im, S.‐J. Choi, J. S. Kim, K. H. Kim, G. S. Lee, J. S. Oh, M. H. Song, Y. C. Park, J. W. Kim, and Y.‐K. Choi "Partially Depleted SONOS FinFET for Unified RAM (URAM)—Unified Function for High‐Speed 1T DRAM and Nonvolatile Memory" IEEE Electron Device Letters, vol. 29 no. 7 pp. 781–783, 2008-07 PDF
  • 3 H. J. Kim, D. M. Kim, D. H. Woo, S. -I. Kim, S. H. Kim, J. I. Lee, K. N. Kang, and K. Cho "High Photoresponsivity of a P-channel InGaP/GaAs/InGaAs Double Heterojunction Pseudomorphic Modulation-Doped Field Effect Transistor" Appl. Phys. Lett., vol. 72, no. 5, pp. 584-586, 1998-02 PDF
  • 2 J.‐W. Han, S.‐W. Ryu, S. Kim, C.‐J. Kim, J.‐H. Ahn, S.‐J. Choi, J. S. Kim, K. H. Kim, G. S. Lee, J. S. Oh, M. H. Song, Y. C. Park, J. W. Kim, and Y.‐K. Choi "A Bulk FinFET Unified‐RAM (URAM) Cell for Multifunctioning NVM and Capacitorless 1T‐DRAM" IEEE Electron Device Letters, vol. 29 no. 6 pp. 632–634, 2008-06 PDF
  • 1 S. H. Song, D. M. Kim, H. J. Kim, S. H. Kim, K. N. Kang, and M. I. Nathan "Photonic Microwave Characteristics and Modeling of an Al0.3Ga0.7As/GaAs/In0.13Ga0.87As Double Heterostructure Pseudomorphic HEMT" IEEE Microwave and Guided Wave Lett, vol. 8, no. 1, pp. 35-37, 1998-01 PDF