Journal papers

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  • 207 S. Jun, C. Jo, H. Bae, H. Choi, D. H. Kim, and D. M. Kim "Unified Subthreshold Coupling Factor Technique for Surface Potential and Subgap Density-of-States in Amorphous Thin Film Transistors" IEEE Electron Device Letters, vol. 34, no. 5, pp. 641-643, 2013-05 PDF
  • 206 C. Jo, S. Jun, W. Kim, I. Hur, H. Bae, S.-J. Choi, D. H. Kim, and D. M. Kim "Characterization of density-of-states and parasitic resistance in a-InGaZnO thin-film transistors after negative bias stress" Appl. Phys. Letters, vol. 102, issue. 5, p. 143502, 2013-04 PDF
  • 205 I. Hur, H. Bae, W. Kim, J. Kim, H. K. Jeong, C. Jo, S. Jun, J. Lee, Y. H. Kim, D. H. Kim, and D. M. Kim "Characterization of Intrinsic Field-Effect Mobility in TFTs by De-Embedding the Effect of Parasitic Source and Drain Resistances" IEEE Electron Device Letters, vol. 34, no. 2, pp. 250-252, 2013-02 PDF
  • 204 J. Lee, J.-M. Lee, J. H. Lee, M. Uhm, W. H. Lee, S. Hwang, I.-Y. Chung, B.-G. Park, D. M. Kim, Y. -J. Jeong,and D. H. Kim "SiNW-CMOS Hybrid Common-Source Amplifier as a Voltage-Readout Hydrogen Ion Sensor" IEEE Electron Device Letters, vol. 34, no. 1, pp. 135-137, 2013-01 PDF
  • 203 H. Bae, H. Choi, S. Oh, D. H. Kim, J. Bae, J. Kim, Y. H. Kim, and D. M. Kim "Extraction Technique for Intrinsic Subgap DOS in a-IGZO TFTs by De-Embedding the Parasitic Capacitance Through the Photonic C-V Measurement" IEEE Electron Device Letters, vol. 34, no. 1, pp. 57-59, 2013-01 PDF
  • 202 S. C. Baek, H. Bae, D. H. Kim, and D. M. Kim "Avalanche Hot Source Method for Separated Extraction of Parasitic Source and Drain Resistance in Single Metal-Oxide-Semiconductor Field Effect Transistors" Journal of Semiconductor Technology and Science, vol. 12, no. 1, pp. 46-52, 2012-03 PDF
  • 201 H.-S Kim, J. S. Park, H.-K. Jeong, K. S. Son, T. S. Kim, J.-B. Seon, E. Lee, J. G. Chung, D. H. Kim, M. Ryu, and S. Y. Lee "Density of States-Based Design of Metal Oxide Thin-Film Transistors for High Mobility and Superior Photostability" ACS Appl. Mater. Interfaces, vol. 4, no. 10, pp. 5416-5421, 2012-09 PDF
  • 200 J. Lee, J.-M. Lee, J. H. Lee, W. H. Lee, M. Uhum, B.-G. Park, D. M. Kim, Y.-J. Jeong, and D. H. Kim "Complementary Silicon Nanowire Hydrogen Ion Sensor With High Sensitivity and Voltage Output" IEEE Electron Device Letters, vol. 33, no. 12, pp. 1768-1770, 2012-12 PDF
  • 199 Y. Kim, S. Kim, W. Kim, M. Bae, H. K. Jeong, D. Kong, S. Choi, D. M. Kim and D. H. Kim "Amorphous InGaZnO Thin-Film Transistors-Part II Modeling and Simulation of Negative Bias Illumination Stress-Induced Instability" IEEE Transactions on Electron Devices, vol. 59, no. 10, pp. 2699-2706, 2012-10 PDF
  • 198 Y. Kim, M. Bae, W. Kim, D. Kong, H. K. Jeong, H. Kim, S. Choi, D. M. Kim and D. H. Kim "Amorphous InGaZnO Thin-Film Transistors-Part I: Complete Extraction of Density of States Over the Full Subband-Gap Energy Range" IEEE Transactions on Electron Devices, vol. 59, no. 10, pp. 2689-2698, 2012-10 PDF
  • 197 E. Hong, D. Yun, H. Bae, H. Choi, W. H. Lee, M. Uhm, H. Seo, J. Lee, J. Jang, D. H. Kim, and D. M. Kim "Subbandgap Optical Differential Body-Factor Technique and Characterization of Interface States in SOI MOSFETs" IEEE Electron Device Letters, vol. 33, no. 7, pp. 922-924, 2012-07 PDF
  • 196 H.-H. Nahm, Y.-S. Kim, and D. H. Kim "Instability of amorphous oxide semiconductors via carrier-mediated structural transition between disorder and peroxide state" Phys. Status Solid, vol 249, no. 6, pp. 1277-1281, 2012-02 PDF
  • 195 I.-T. Cho, I.-J. Park, D. Kong, D. H. Kim, J.-H. Lee, S.-H. Song, and H.-I. Kwon "Extraction of the Channel Mobility in InGaZnO TFTs Using Multifrequency Capacitance-Voltage Method" IEEE Electron Device Letters, vol. 33, no. 6, pp. 815-817, 2012-06 PDF
  • 194 S. Y. Lee, D. H. Kim, B. Kim, H. K. Jung, and D. H. Kim "Comparative analysis of temperature thermally induced instability between Si–In–Zn–O and Ga–In–Zn–O thin film transistors" Thin-Solid Films vol. 520, vol. 520, no. 10, pp. 3796-3799, 2012-03 PDF
  • 193 H. Bae, S. Jun, C. Jo, H. Choi, J. Lee, Y. H. Kim, S. Hwang, H. K. Jeong, I. Hur, W. Kim, D. Yun, E. Hong, H. Seo, D. H. Kim, and D. M. Kim "Modified Conductance Method for Extraction of Subgap Density-of-States in a-IGZO Thin-Film Transistors" IEEE Electron Device Letters, vol. 33, no. 8, pp.. 1138-1140, 2012-08 PDF
  • 192 I.-Y. Chung, H. Jang, J. Lee, H. Moon, S. M. Seo, and D. H. Kim "Simulation study on discrete charge effects of SiNW biosensors according to bound target position using a 3D TCAD simulator" IOP Science Nanotechnology, vol. 23, p. 065202, 2012-01 PDF
  • 191 H. Bae, I. Hur, J. S. Shin, D. Yun, E. Hong, K.-D. Jung, M.-S. Park, S. Choi, W. H. Lee, M. Uhm, D. H. Kim, and D. M. Kim "Hybrid C-V and I-V Technique for Separate Extraction of Structure- and Bias-Dependent Parasitic Resistances in a-InGaZnO TFTs" IEEE Electron Device Letters, vol. 33, no 4, 2012-04 PDF
  • 190 J. Jang, J. Kim, M. Bae, J. Lee, D. M. Kim, and D. H. Kim "Extraction of the sub-bandgap density-of-states in polymer thin-film transistor with the multi-frequency capacitance-voltage spectroscopy" Appl. Phys. Letters, vol. 100, issue. 13, p. 133506, 2012-03 PDF
  • 189 M. Bae, D. Yun, Y. Kim, D. Kong, H. K. Jeong, W. Kim, J. Kim, I. Hur, D. H. Kim, and D. M. Kim "Differential Ideality Factor Technique for Extraction of Subgap Density of States in Amorphous InGaZnO Thin-Film Transistors" IEEE Electron Device Letters, vol.33, no. 3, pp. 339-401, 2012-03 PDF
  • 188 J. S. Shin H. Choi, H. Bae, J. Jang, D. Yun, E. Hong, D. H. Kim, and D. M. Kim "Vertical Gate Si/SiGe Double HBT-based Capacitorless 1T DRAM Cell for Extended Retention time at Low Latch Voltage" IEEE Electron Device Letters, vol.33, no. 2, pp. 134-136, 2012-02 PDF