Journal papers

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  • 190 J. Jang, J. Kim, M. Bae, J. Lee, D. M. Kim, and D. H. Kim "Extraction of the sub-bandgap density-of-states in polymer thin-film transistor with the multi-frequency capacitance-voltage spectroscopy" Appl. Phys. Letters, vol. 100, issue. 13, p. 133506, 2012-03 PDF
  • 189 M. Bae, D. Yun, Y. Kim, D. Kong, H. K. Jeong, W. Kim, J. Kim, I. Hur, D. H. Kim, and D. M. Kim "Differential Ideality Factor Technique for Extraction of Subgap Density of States in Amorphous InGaZnO Thin-Film Transistors" IEEE Electron Device Letters, vol.33, no. 3, pp. 339-401, 2012-03 PDF
  • 188 J. S. Shin H. Choi, H. Bae, J. Jang, D. Yun, E. Hong, D. H. Kim, and D. M. Kim "Vertical Gate Si/SiGe Double HBT-based Capacitorless 1T DRAM Cell for Extended Retention time at Low Latch Voltage" IEEE Electron Device Letters, vol.33, no. 2, pp. 134-136, 2012-02 PDF
  • 187 S. Kim, Y. W. Jeon, Y. Kim, D. Kong, H. K. Jung, M. Bae, J.-H. Lee, B. D. Ahn, S. Y. Park, J.-H. Park, J. Park, H.-I. Kwon, D. M. Kim, and D. H. Kim "Impact of Oxygen Flow Rate on the Instability under Positive Bias-Stresses in DC Sputtered Amorphous InGaZnO Thin-Film Transistors" IEEE Electron Device Letters, vol. 33, no. 1,pp. 62-64, 2012-01 PDF
  • 186 D. H. Kim, Y. W. Jeon, S. Kim, Y. Kim, Y. S. Yu, D. M. Kim, and H.-I. Kwon "Physical Parameter-Based SPICE Models for InGaZnO Thin Film Transistors Applicable to Process Optimization and Robust Circuit Design" IEEE Electron Device Letters, vol. 33, no. 1, pp. 59-61, 2012-01 PDF
  • 185 J. Jang, J. C. Park, D. Kong, D. M. Kim, J.-S. Lee, B.-H Sohn, I. H. Cho, and D. H. Kim "Endurance Characteristics of Amorphous-InGaZnO Transparent Flash Memory With Gold Nanocrystal Storage Layer" IEEE Trans. Electron Devices, vol. 58, no. 11, pp. 3940-3947, 2011-11 PDF
  • 184 D. H. Kim, D. Y. Yoo, H. K. Jung, D. H. Kim, and S. Y. Lee "Origin of instability by positive bias stress in amorphous Si-In-Zn-O thin film transistor" Appl. Phys. Lett., vol. 99, pp. 172106, 2011-10 PDF
  • 183 D. H. Kim, H. K. Jung, D. H. Kim, and S. Y. Lee "Effect of interface states on the instability under temperature stress in amorphous SiInZnO thin film transistor" Appl. Phys. Lett., vol. 99, pp. 162101, 2011-10 PDF
  • 182 J. S. Shin, H. Bae, J. Jang, D. Yun, J. Lee, D. H. Kim and D. M. Kim "A narrow bandgap SiGe channel superlattice bandgap engineered 1T DRAM cell for low voltage operation and extended hole retention time" Semiconductor Science and Technology, vol. 26, pp. 095025, 2011-08 PDF
  • 181 Y. W. Jeon, I. Hur, Y. Kim, M. Bae, H.-K. Jung, D. Kong, W. Kim, J. Kim, J. Jang, D. M. Kim, and D. H. Kim "Physics-Based SPICE Model of a-InGaZnO Thin-Film Transistor Using Verilog-A" Journal of Semiconductor Technology and Science, vol. 11, no. 3, 2011-09 PDF
  • 180 Y. Kim, M. Bae, D. Kong, H.-K. Jung, J. Kim, W. Kim, I. Hur, D. M. Kim, and D. H. Kim "Quantitative Analysis of Negative Bias Illumination Stress-Induced Instability Mechanisms in Amorphous InGaZnO Thin-Film Transistors" J. Korean Phys. Soc., vol. 59, no. 2, pp. 474~477, 2011-08 PDF
  • 179 D. Kong, H.-K. Jung, Y. Kim, M. Bae, J. Jang, J. Kim, W. Kim, I. Hur, D. M. Kim and D. H. Kim "Effect of the Active Layer Thickness on the Negative Bias Illumination Stress-induced Instability in Amorphous InGaZnO Thin-film Transistors" J. Korean Phys. Soc., vol. 59, no. 2, pp. 505-510, 2011-08 PDF
  • 178 D. H. Kim, D. Kong, S. Kim, Y. W. Jeon, Y. Kim, D. M. Kim, and H.-I. Kwon "AC stress-induced degradation of amorphous InGaZnO thin film transistor inverter" Japanese J. Appl. Phys., vol. 50, p. 090202, 2011-09 PDF
  • 177 D. Kong, H.-K. Jung, Y. Kim, M. Bae, Y. W. Jeon, S. Kim, D. M. Kim, and D. H. Kim "The Effect of the Active Layer Thickness on the Negative Bias Stress-Induced Instability in Amorphous InGaZnO Thin-Film Transistors" IEEE Electron Device Lett., vol. 32, no. 10, pp. 1388-1390, 2011-10 PDF
  • 176 J.-H. Park, Y. Kim, S. Kim, H. Bae, D. H. Kim, and D. M. Kim "Surface Potential-Based Analytic DC I-V Model with Effective Electron Density for Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors Considering Parastic Resistance" IEEE Electron Device Letters., vol. 32, no. 11, pp. 1540-1542, 2011-11 PDF
  • 175 M. Bae, Y. Kim, D. Kong, H.-K. Jung, W. Kim, J. Kim, I. Hur, D. M. Kim, and D. H. Kim "Analytical Models for Drain Current and Gate Capacitance in Amorphous InGaZnO Thin Film Transistors with Effecitve Carrier Density" IEEE Electron Device Letters., vol. 32, no. 11, pp. 1546-1548, 2011-11 PDF
  • 174 M. Bae, Y. Kim, S. Kim, D. M. Kim, and D. H. Kim "Extraction of Subgap Donor States in a-IGZO TFTs by Generation-Recombination Current Spectroscopy" IEEE Electron Device Lett., vol. 32, no. 9, pp. 1248-1250, 2011-09 PDF
  • 173 D. Yun, M. Bae, J. Jang, H. Bae, J. S. Shin, E. Hong, J. Lee,D. H. Kim, and D. M. Kim "Differential Body Factor Technique for Characterization of Interface Trap in MOSFETs" IEEE Electron Device Lett., vol. 32, no. 9, pp. 1206-1208, 2011-09 PDF
  • 172 J. S. Shin, H. Bae, J. Jang, D. Yun, J. Lee, E. Hong, D. H. Kim, and D. M. Kim "A Novel Double HBT-based Capacitorless 1T DRAM Cell with Si/SiGe Heterojunctions" IEEE Electron Device Lett., vol. 32, no. 7, pp. 850-852, 2011-07 PDF
  • 171 S. Y. Lee, D. H. Kim, E. Chong, Y. W. Jeon, and D. H. Kim "Effect of channel thickness on density of states in amorphous InGaZnO thin film transistor" Applied Physics Letters, vol. 98, no. 12, pp. 1077-3118, 2011-03 PDF