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◈ date : 2015. 1. 30.
◈ time : 15:00
◈ place : 7th building 5nd floor no. 502
◈ presenter : Hyoun Mo Choi, Seungguk Kim, Minsu Jeon
◈ book :
-MOSFET MODELING FOR VLSI SIMULATION (Narain Arora)
<Hyoun Mo Choi> 2. Review of Basic Semiconductor and pn Junction Theory
2.6 Diode Current-Voltage Characteristics
2.7 Diode Dynamic Behavior
2.8 Real pn Junction
2.9 Diode Circuit Model
2.10 Temperature Dependent Diode Model Parameters
<Seungguk Kim> 3. MOS Transistor Structure and Operation
3.5 VLSI Device Structure
3.6 MOSFET Parasitic Elements
3.7 MOSFET Length and Width Definitions
3.8 MOSFET Circuit Models
<Minsu Jeon> 4. MOS Capacitor
4.3 Capacitance of MOS Structures
4.4 Deviation from Ideal C-V Curves
4.5 Anomalous C-V Curve (Poly-Si Depletion Effect)
4.6 MOS Capacitor Applications
4.7 Non-uniformly Doped Substrate and Flat-band Voltage
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