434H. Kim, H. Yang, S. Lee, S. Yun, J. Park, S. Park, H. N. Lee, H. Kim, S.-J. Choi, D. H. Kim, D. M. Kim, D. Kwon*, and J.-H. Bae*"Comprehensive analysis of read-after-write latency in HfZrOX-based ferroelectric field-effect-transistors with SiO2 interfacial layer"Applied Physics Letters, Vol.124,Issue.3, doi: 10.1063/5.0172204, 2024-01
433Y. An, H. Lee, J. Ko, H.-I. Yang, G. Min, D. M. Kim, D. H. Kim, J.-H. Bae, M.-H. Kang, S.-J. Choi"Gate Capacitance Coupling of Double-Gate Carbon Nanotube Network Transistors"ACS Applied Materials & Interfaces, doi: 10.1021/acsami.3c14382., 2024-01
432J. Park, S. Choi, C. Kim, H. J. Shin, Y. S. Jeong, J. U. Bae, S. Oh, D. H. Kim"Lifetime estimation of thin‑flm transistors in organic emitting diode display panels with compensation"Scientific reports, p.13, DOI: https://doi.org/10.1038/s41598-023-44684-5, 2023-10
431Y.AN, Y.LEE, D. M. Kim, D. H. Kim, J.-H. Bae, M.-H. Kang, S.-J. Choi"Wafer-scale striped network transistors based on purified semiconducting carbon nanotubes for commercialization"NANOTECHNOLOGY, Vol.34 405202, 2023-07
430D. Kim, J. T. Jang , W. S. Choi, H. J. Lee, J. T. Jang, E. Hong, W. Y. Yang, M. Choi, K. Y. Yamg, C. S. Lee, J. Woo and and Dae Hwan Kim"Understanding ovonic threshold switching of GeSe chalcogenide materials using electrical methodologies for extracting density of states"Applied. Physics. Letter, , 2023-08
429 J.Y. Park, H. Kim, H. B. Yoo, J. H. Ryu, S. H. Han, J.-H. Bae, S.-J. Choi, D. H. Kim, D. M. Kim" Simultaneous Extraction of Mobility Enhancement Factor and Threshold Voltage With Parasitic Resistances in Amorphous Oxide Semiconductor Thin-Film Transistors"IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol.70 2312 - 2316, 2023-03
428D. Kim, J. T. Jang , C. Kim , H. W. Kim, E. Hong, S Ban , M. Shin, H. Lee, H. D. Lee, H.-S. Mo, J. Woo and Dae Hwan Kim"Read Disturbance in Cross-Point Phase-Change Memory Arrays—Part I: Physical Modeling With Phase-Change Dynamics"IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol. 70. NO. 2, 2023-02, 2023-02
427S. J. Myoung, C. I. Ryoo, C. Kim, S.-J. Choi, D. M. Kim, J.-H. Bae, D. H. Kim""Thermal Process and Dopant Diffusion Model of a-InGaZnO TFTs for VT Prediction Using Lateral Carrier Density Profiling Technique""IEEE Electron Device Letters, vol. 44, no. 4, pp. 630-633, doi: 10.1109/LED, 2023-04
426D. Kang, W. Kim, D. Kim, J. T. Jang, C. Kim, J. N. Kim, S.-J. Choi, J.-H. Bae, D. M. Kim, Y. Kim, and D. H. Kim"Short- and Long-Term Memory Based on a Floating-Gate IGZO Synaptic Transistor"IEEE Access, , 2023-02
425D. Kim, H. J. Lee, T J Yang, W. S. Choi, C. Kim, S.-J. Choi, J.-H. Bae, D. M. Kim, S. Kim, D. H. Kim"Compact SPICE Model of Memristor with Barrier Modulated Considering Short- and Long-Term Memory Characteristics by IGZO Oxygen Content"MDPI: Micromachines , 1630. https://doi.org/10.3390/mi13101630, 2022-09
424D. Kim, J. T. Jang , C. Kim , H. W. Kim, E. Hong, S Ban , M. Shin, H. Lee, H. D. Lee, H.-S. Mo, J. Woo and Dae Hwan Kim"Read Disturbance in Cross-Point Phase-Change Memory Arrays—Part II: Array Simulations Considering External Currents"IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol. 70. NO. 2, 2023-02
423S. Choi†, I. Chae†, J. Park, Y. Seo, C. I. Ryoo, D. M. Kim, S.-J. Choi, D.-W. Park*, and D. H. Kim*"Extraction Technique for Flat Band Voltage Using Multi-Frequency C-V Characteristics in Amorphous InGaZnO Thin-Film-Transistors"IEEE Electron Device Letter, doi: 10.1109/LED.2020.3032442, pp. 1778-1781, 2020-10
422J. Park, S. Choi, C. Kim, H. J. Shin, Y. S. Jeong, J. U. Bae, C. H. Oh, S. Oh, D. H. Kim"Current Boosting of Self-Aligned Top-Gate Amorphous InGaZnO Thin-Film Transistors under Driving Conditions"Advanced Electronic Materials , DOI: 10.1002/aelm.202201109, 2023-01, 2023-01
421M. Park, H. Lee, G. Lee, S. C. Jang, Y. H. Chang, H. Hong, K.-B. Chung, K. J. Lee, D. H. Kim, H.-S. Kim"Organic/Inorganic Hybrid Top-Gate Transistors with Ultrahigh Electron Mobility via Enhanced Electron Pathways"ACS Applied Materials & Interfaces, DOI: 10.1021/acsami.2c16881, 2022-12, 2022-12
420T. J. Yang, J.-H. Kim, J. R. Cho, H. J. Lee, K. Kim, J. Park, S.-J. Choi, J.-H. Bae, D. M. Kim, S. Kim, and D. H. Kim"Physical model of a local threshold voltage shift in InGaZnO thin-flim transistors under current stress for instability-aware circuit design"Current Applied Physics, Doi: 10.1016/j.cap.2022.11.011., 2023-02
419J. Park, S. Choi, S. J. Myoung, J.-Y Kim, C. Kim, S.-J. Choi, D. M. Kim, J.-H. Bae, D. H. Kim"Spatial degradation profiling technique in self-aligned top-gate a-InGaZnO TFTs under current-flowing stress"IEEE Electron Device Letters, DOI: 10.1109/LED.2022.3225838, 2023-01
418S. Choi†, G. W. Yang†, S. Lee, J. Park, C. Kim, J. Park, H.-S. Choi, N. Lee, G.-J. Kim, Y. Kim, M. Kang, C. Kim, J.-H. Bae, D. H. Kim"Fowler–Nordheim Stress-Induced Degradation of Buried-Channel-Array Transistors in DRAM Cell for Cryogenic Memory Applications"IEEE Transactions on Electron Devices, DOI: 10.1109/TED.2022.3221028, 2022-11
417T. J. Yang†, J.-H. Kim†, C. I. Ryoo, S. J. Myoung, C. Kim, J. H. Baeck, J.-U Bae, J. Noh, S.-W. Lee, K.-S. Park, J.-J. Kim, S.-Y. Yoon, Y. Kim, D. H. Kim"Analysis of Drain-Induced Barrier Lowering in InGaZnO Thin-Film Transistors"IEEE Transactions on Electron Devices, DOI: 10.1109/TED.2022.3223642, 2022-11
416D. Kim, J-H Kim, W. S. Choi, T. J. Yang, J. T. Jang, A. Belmonte, N. Rassoul, S. Subhechha, R. Delhougne, G. S. Kar, W. Lee, M. H. Cho, D. Ha, D. H. Kim"Device modeling of two-steps oxygen anneal-based submicron InGaZnO back-end-of-line field-effect transistor enabling short-channel effects suppression"Scientific Reports, DOI: 10.1038/s41598-022-23951-x, 2022-
415S. Lee†, J. Park†, G. W. Yang, C. Kim, S.-J. Choi, D. M. Kim, J.-H. Bae*, D. H. Kim* (†These authors are co-first authors)"Analysis of a-InGaZnO TFT Threshold Voltage Instability and Mobility Boosting by Current Stress at a Cryogenic Temperature"IEEE Electron Device Letters, DOI: 10.1109/LED.2022.3221537, 2022-