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Cooperation group

  • SAMSUNG
  • LG Display
  • Electronics and Telecommunications Research Institute
  • 한국표준과학연구원
  • SK hynix
  • 한경대학교
  • 한양대학교
  • 청주대학교
  • KIST
  • 경북대학교
  • UNIST
  • 경상대학교
  • 광운대학교
  • 가천대학교
  • 한국과학기술원
  • 연세대학교
  • 고려대학교
  • 숭실대학교
  • KETI
  • 성균관대학교
  • 명지대학교
  • 건국대학교
  • 서강대학교
  • 중앙대학교
  • SMDL

Professor

  • Prof. Dong Myong Kim

    ◎ Prof. Dong Myong Kim, Ph.D.

    ◎ Seoul National University, BSEE, (1986. 2.)

    ◎ Seoul National University, MSEE, (1988. 2.)

    ◎ University of Minnesota (Government scholarship), Ph.D.EE, (1993. 2.)

    ◎ Korea Institute of Science and Technology(KIST), Researcher, (1988. 2. - 1989. 8.)

    ◎ School. of Electrical Eng., Kookmin Univ., Professor, (1993. 3. ~ )
  • Prof. Dae Hwan Kim

    ◎ Prof. Dae Hwan Kim, Ph.D.
    ◎ Seoul National University, BSEE, (1996. 2.)
    ◎ Seoul National University, MSEE, (1998. 2.)
    ◎ Seoul National University, Ph.D.EE, (2002. 2.)
    ◎ Semiconductor Materials and Device Laboratory(SMDL)
       in Seoul National University, Postdoctoral researcher,
      ( 2002. 3. - 2002. 8.)
    ◎ Samsung Electronics, DRAM Design Team, Principal Research
       Engineer , (2002. 9. - 2005. 8.)
    ◎ University of Michigan, Ann Arbor, USA  Visiting Scholar , (2012. 3. - 2013. 2.)
    ◎ School. of Electrical Eng., Kookmin Univ., Professor (2005.9. ~ )
  • Prof. Sung-Jin Choi

    ◎ Prof. Sung-Jin Choi, Ph.D.
    ◎ Chung-Ang University, BSEE, (2007. 2.)
    ◎ KAIST, MSEE, (2008. 8.)
    ◎ KAIST, Ph.D.EE, (2012. 2.)
    ◎ ETRI: Electronics and Telecommunications Research Institute, Assistant   researcher (2009.01 ~ 2011.01)
    ◎ University of California, Berkeley (PI: Prof. Jeffrey Bokor), Postdoctoral
      researcher (2011.12 ~ 2013.02)
    ◎ School. of Electrical Eng., Kookmin Univ., Assistant Professor
       (2013.2. ~ )

Graduate students

  • 21st Jang, Jun Tae(D16)
  • 21st Choi, Sungju(D16)
  • 21st Yoon, Jinsu(D16)
  • 23rd (Lab. Master) Lee, yongwoo(H16)
  • 26th Kim, Donguk
  • 26th Park, Geon-Hwi
  • 26th Park, Jingyu
  • 26th Seo, Youngjin
  • 26th You, Jin Tae
  • 27th Kang, Dongyeon
  • 27th Kim, Jae Hyuck
  • 27th Kim, Hae Sung
  • 27th Yang, Ga Won
  • 27th Jeon, Ju Won
  • 27th Choi, Woo Sik
  • 27th Chae, in seok
  • 28th Kim, JuEun
  • 28th Ryu, JiHee
  • 28th Yang, TaeJun
  • 28th Lee, HyunKyu
  • 28th Choi, SeungKyu
  • 28th Hwang, JaeYoung

Alumni

  • 1th 김성진 (M94)
  • 1th 마병진 (M94)
  • 1th 김해택 (D96)
  • 1th 이승훈 (M94)
  • 1th 정훈 (M94)
  • 1th 신수호 (M94)
  • 1th 박상일 (M94)
  • 2nd 정진세 (M95)
  • 2nd 강희종 (D96)
  • 3rd 송상호 (M96)
  • 3rd 임석진 (M96)
  • 3rd 조재진 (M96)
  • 3rd 윤재만 (M96)
  • 4th 장재춘 (M97)
  • 5th 임광만 (M98)
  • 5th 백강현 (M98)
  • 6th 김상균 (M99)
  • 6th 김현창 (M99)
  • 6th 김영철 (M99)
  • 7th 송상준 (M00)
  • 7th 조수동 (M00)
  • 8th 지성수 (M01)
  • 8th 김민수 (M01)
  • 9th 박흥석 (M02)
  • 9th 신현택 (M02)
  • 9th 김태은 (M02)
  • 10th 정준익(T03)
  • 10th 김경호 (M03)
  • 10th 남인철 (M03)
  • 10th 김관수 (M03)
  • 11th 이장욱 (M04)
  • 11th 박미영 (T04)
  • 11th 최재복 (M04)
  • 12th 김세운 (H05)
  • 12th 강구철 (M05)
  • 13th 서승환 (M06)
  • 13th 김관영 (M06)
  • 13th 이충현 (M06)
  • 13th 노강섭 (M06)
  • 14th 전기찬 (M07)
  • 14th 박준현 (M07)
  • 14th 박소라 (M07)
  • 14th 송관재 (M07)
  • 14th 최창민 (M07)
  • 14th 이순영 (M07)
  • 15th 백성진 (M08)
  • 15th 박성욱(M08)
  • 15th 이상원 (M08)
  • 15th Lee, Jieun (D10)
  • 16th 김성철(M09)
  • 16th 전용우(M09)
  • 16th Bae, Hagyoul (M09)
  • 16th Jang, Jaeman (D11)
  • 17th Jung, Hyunkwang (M10)
  • 17th Yun, Daeyoun (M10)
  • 17th 장혜리(M10)
  • 17th 신자선(M10)
  • 17th 배민경(M10)
  • 17th 공동식(M10)
  • 17th 김용식(M10)
  • 18th Uhm, Mihee (M11)
  • 18th Kim, Jaehyeong (M11)
  • 18th Kim, Woojoon (M11)
  • 18th Hur, Inseok (M11)
  • 18th Seo, Hyojoon (M11)
  • 18th Hong, Euiyoun
  • 18th Lee, Won Hee
  • 19th Kim, Yun Hyeock (M12)
  • 19th Choi, Hyunjun (M12)
  • 19th Lee, Jaewook (M12)
  • 19th Jo, Chunhyung (M12)
  • 19th Hwang, Seonwook (M12)
  • 19th Jun, Sungwoo (M12)
  • 20th Kim, Dae Geun (M13)
  • 20th Kim, Hyeongjung (M13)
  • 20th Lee, Kyung Min (M13)
  • 20th Shin, Dong Jae (M13)
  • 20th Jun Seok Hwang (M13)
  • 20th Choi, Bongsik (D15)
  • 20th th Ahn, Jaeyeop (M13)
  • 21th Lee, Jungmin(M14)
  • 21th Choi, Hyoun Mo(M14)
  • 21th Kim, Seungguk(M14)
  • 21th Kim, Jonghwa(M14)
  • 22th Kim, Seong Kwang(M15)
  • 22th Lee, Juhee(M15)
  • 22th Kang, Hara(M15)
  • 22th Kim, Jungmok(M15)
  • 22th Jeon, Minsu(M15)
  • 23th Jang, Junggyu(M16)
  • 23th Kim, Jaewon(M16)
  • 23th Han, Jungmin(M16)
  • 23th Lee, Jieun(M16)
  • 23th Lee, Heesung(M16)
  • 23th Kim, Seohyeon(M16)
  • 23th Ko, Deahyun(M16)
  • 23th Kim, Jaeyoung(M16)
  • 24th Kim, Junyeap(M17)
  • 24th Park, Jinhee(M17)
  • 24th Ahn, Geumho(M17)

Journal papers

  • 1 J. T. Jang, J. Min, D. Kim, J. Park, S.-J. Choi, D. M. Kim, S. Cho*, and D. H. Kim* (*co-corresponding authors) "A highly reliable physics-based SPICE compact model of IGZO memristor considering the dependence on electrode metals and deposition sequence" Solid-State Electronics, Just accepted, 2020-01
  • 2 S. Kim, Y. Lee, H.-D. Kim, and S.-J. Choi* "Parallel Weight Update Protocol for a Carbon Nanotube Synaptic Transistor Array for Accelerating Neuromorphic Computing" Nanoscale, Just accepted, 2019-12
  • 3 J. Lee†, J. T. Jang†, J. Jang, J. Kim, J. W. Chung, S.-J. Choi, D. M. Kim, K. R. Kim, and D. H. Kim "Density-of-States Based Physical Model for Ink-jet Printed Thiophene Polymeric TFTs" IEEE Transactions on Electron Devices, vol. 67, no. 1, pp. 283-288, DOI: 10.1109/TED.2019.2953193, 2020-01
  • 4 Y. Lee†, G.-H. Park†, B. Choi, J. Yoon, H.-J. Kim, D. H. Kim, D. M. Kim, M.-H. Kang*, and S.-J. Choi* (†These authors equally contributed to this work & *co-corresponding authors) "Design study of the gate-all-around silicon nanosheet MOSFETs" Semiconductor Science and Technology, Just accepted, 2019-12
  • 5 S. Choi†, S. G. Seo†, H. R. Yu, S. Y. Kim, D. H. Kim*, and S. H. Jin*(†These authors equally contributed to this work & *co-corresponding authors) "Hydrophobic Polymer Encapsulation Effects on Subgap Density of States in Multi-Layered MoS2 Field Effect Transistors" Physica status solidi (a), 1900492, DOI : 10.1002/pssr.201900492, 2019-11
  • 6 S. Choi†, S. Park†, J. Kim, Y. Seo, H. J. Shin, Y. S. Jeong, J. U. Bae, C. H. Oh, D. M. Kim, S. -J. Choi, and D. H. Kim* (†These authors equally contributed to this work) "Positive Bias Stress Instability of InGaZnO TFTs with Self-Aligned Top-Gate Structure in the Threshold-Voltage Compensated Pixel" IEEE Electron Device Lett., vol. 41, no., 1, pp. 50-53, DOI:10.1109/LED.2019.2954543, 2019-11
  • 7 S. Kim, Y. Lee, H.-D. Kim, S.-J. Choi* "Precision-extension technique for accurate vector-matrix multiplication with CNT transistor crossbar array" Nanoscale, vol. 11, no. 44, pp. 21449-21457, DOI: 10.1039/C9NR06715A, 2019-11
  • 8 Y. Seo, H.-S. Jeong, H.-Y. Jeong, S. Park, J. T. Jang, S. Choi, D. M. Kim, S.-J. Choi, X. Jin, H.-I. Kwon*, and D. H. Kim* (*co-corresponding authors) "Effect of Simultaneous Mechanical and Electrical Stress on the Electrical Performance of Flexible In-Ga-Zn-O Thin-Film Transistors" Materials, vol. 12, no. 19, p. 3248; doi:10.3390/ma12193248,2019-10, 2019-10
  • 9 M. Uhm, J.-M. Lee, J. Lee, J. H. Lee, S. Choi, B.-G. Park, D. M. Kim, S.-J. Choi, H.-S. Mo, Y.-J. Jeong,* and D. H. Kim* (*co-corresponding authors) "Ultrasensitive Electrical Detection of Hemagglutinin for Point-of-Care Detection of Influenza Virus Based on a CMP-NANA Probe and Top-Down Processed Silicon Nanowire Field-Effect Transistors" Sensors, vol. 19, no. 20, p. 4502, DOI : 10.3390/s19204502, 2019-10
  • 10 S. Kim, H.-D. Kim, and S.-J. Choi* "Impact of Synaptic Device Variations on Classification Accuracy in a Binarized Neural Network " Scientific Rerpots, vol. 9, p. 15237, DOI:10.1038/s41598-019-51814-5, 2019-10
  • 11 S. Choi, J.-Y. Kim, H. Kang, D. Ko, J. Rhee, S.-J. Choi, D. M. Kim, and D. H. Kim "Effect of Oxygen Content on Current Stress-Induced Instability in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors" Materials, vol. 12, no. 19p. 3149, DOI : 10.3390/ma12193149, 2019-10
  • 12 J. T. Jang†, G. Ahn†, S.-J. Choi, D. M. Kim, and D. H. Kim (†These authors equally contributed to this work) "Control of the Boundary between the Gradual and Abrupt Modulation of Resistance in the Schottky Barrier Tunneling-Modulated Amorphous Indium-Gallium-Zinc-Oxide Memristors for Neuromorphic Computing" Electronics, vol. 8, no. 10, p. 1087, 2019-09, doi: 10.3390/electronics8101087, 2019-09
  • 13 H. B. Yoo, J. Kim, J. Yoo, H.-J. Kim, S.-J. Choi, D. H. Kim, and D. M. Kim "Capacitance-Voltage Technique for Characterization of Lateral Trap Locations along the Channel in Field Effect Transistors" Solid-State Electronics, vol. 163,p. 107647, DOI: 10.1016/j.see.2019.107647, 2020-01, 2019-09
  • 14 H. B. Yoo, S. K. Kim, J. Kim, J. Yu, S.-J. Choi, D. H. Kim, and D. M. Kim "Characterization of Subgap Density-of-States from Sub-Bandgap Optical Charge Pumping in In0.53Ga0.47As MOSFETs" Journal of Nanoscience and Nanotechnoligy (accepted), , 2019-09
  • 15 S. Choi†, S. Kim†, J. Jang, J. Kim, D. M. Kim, S.-J. Choi, H.-S. Mo, S. M. Lee*, and D. H. Kim* (†These authors equally contributed to this work,*co-corresponding authors) "Oxygen Content and Bias Influence on Amorphous InGaZnO TFT-Based Temperature Sensor Performance" IEEE Electron Device Lett., vol. 40, no, 10. pp. 1666-1669, DOI: 10.1109/LED.2019.2937157, 2019-10
  • 16 S. Choi, S. Kim, J. Jang, G. Ahn, J. T. Jang, J. Yoon, T. J. Park, B.-G. Park, D. M. Kim, S.-J. Choi, S. M. Lee, E. Y. Kim, H. S. Mo*, D. H. Kim* (*co-corresponding authors) "Implementing an Artificial Synapse and Neuron Using a Si Nanowire Ion-Sensitive Field-Effect Transistor and Indium-Gallium-Zinc-Oxide Memristors" Sensors and Actuators B:Chemical, vol. 296, no. 126616, pp. 1-9, DOI: 10.1016/j.snb.2019.05.093, 2019-10
  • 17 S. Kim, B. Choi, J. Yoon, Y. Lee, H.-D. Kim, M.-H, Kang, and S.-J. Choi* "Binarized Neural Network with Silicon Nanosheet Synaptic Transistors for Supervised Pattern Classification" Scientific Reports, vol. 9, p. 11705, DOI:10.1038/s41598-019-48048-w, 2019-08
  • 18 Y. Lee, H. Jung, B. Choi, J. Yoon, H. B. Yoo, H.-J. Kim, G.-H. Park, D. M. Kim, D. H. Kim, M.-H. Kang*, and S.-J. Choi* (*co-corresponding authors) "Flexible carbon nanotube Schottky diode and its integrated circuit applications" RSC Advances, vol. 9, no. 38, pp. 22124-22128, DOI:10.1039/c9ra02855b, 2019-07
  • 19 S. Choi, S. Park, J.-Y. Kim, J. Rhee, H. Kang, D. M. Kim, S.-J. Choi, D. H. Kim* "Influence of the gate/drain voltage configuration on the current stress instability in amorphous indium-zinc-oxide thin-film transistors with self-aligned top-gate structure" IEEE Electron Device Letters, vol. 40, no. 9, pp. 1431-1434, DOI : 10.1109/LED.2019.2927378, 2019-09
  • 20 L. Lee, J. W. Hwang, J. W. Jung, J. C. Kim, H. I. Lee, S. W.Heo, M. H. Yoon, S. Choi, N. V. Long, J. S. Park, J. W. Jeong, J. Kim, K. R. Kim, D. H.Kim, S. I. Im, B. H. Lee, K. J. Cho, M. M. Sung* "ZnO Composite nanolayer with mobility edge quantization for multi-value logic transistors" Nature communications, vol. 10, no. 1998, pp. 1-9, DOI : 10.1038/s41467-019-09998-x , 2019-03
  • 21 S. Choi, J.-Y Kim, J. Rhee, H. Kang, S. Park, D. M. Kim, S.-J Choi, D. H. Kim* "Method to extract interface and bulk trap separately over the full sub-gap range in amorphous InGaZnO thin-film transistors by using various channel thicknesses" IEEE Electron Device Letters, vol. 40, no. 4, pp. 574-577, DOI 10.1109/LED.2019.2898217, 2019-04
  • 22 J. T. Jang§, H. Kang§, H. R. Yu, E. S. Kim, K. S. Son, S.-H. Cho, D. M. Kim, S.-J. Choi, D. H. Kim* "The Influence of Anion Composition on Subgap Density of States and Electrical Characteristics in ZnON Thin-Film Transistors" IEEE Electron Device Letters, vol. 40, no. 1, pp. 40-43, DOI: 10.1109/LED.2018.2883732, 2019-01
  • 23 B. Choi, J. Lee, J. Yoon, M. Jeon, Y. Lee, J. Han, J. Lee, J. Park, Y. Kim, D. M. Kim, D. H. Kim, S. Chung, C. Lim, S.-J. Choi* "Effect of charge trap layer thickness on the charge spreading behavior within a few seconds in 3-D charge trap flash memory" Semiconductor Science and Technology, vol. 33, no. 10, doi.org/10.1088/1361-6641/aade29, 2018-09
  • 24 H. R. Yu, J. T. Jang, D. Ko, S. Choi, G. Ahn, S.-J. Choi, D. M. Kim, and D. H. Kim* "Degradation on the Current Saturation of Output Characteristics in Amorphous InGaZnO Thin-Film Transistors" IEEE Transactions on Electron Devices, vol. 65, no. 8, DOI: 1109/TED.2018.2844862, 2018-08
  • 25 S. Kim†, B. Choi†, M. Lim, Y. Kim, H.-D. Kim, S.-J. Choi* (†These authors equally contributed to this work) "Synaptic Device Network Architecture with Feature Extraction for Unsupervised Image Classification" Small, DOI: 10.1002/small. 201800521, 2018-07
  • 26 Y. Lee, B. Choi, J. Yoon, Y. Kim, J. Park, H-.J. Kim, D. H. Kim, D. M. Kim, S. Kim*, and S.-J. Choi*(*co-corresponding authors) "Highly transparent tactile sensor based on a percolated carbon nanotube network" AIP Advances, vol. 8, p. 065109, DOI:10.1063/1.5036530, 2018-06
  • 27 J. Yoon†, J. Han†, B. Choi, Y. Lee, Y. Kim, J. Park, M. Lim, M.-H. Kang, D. H. Kim, D. M. Kim, S. Kim*, S.-J. Choi* "A Three-Dimensional Printed Poly(vinyl alcohol) Substrate with Controlled On-Demand Degradation for Transient Electronics" ACS Nano, DOI: 10.1021/acsnano.8b02244, 2018-05
  • 28 J. Yoon†, H. Jung†, J. T. Jang, J. Lee, Y. Lee, M. Lim, D. M. Kim, D. H. Kim*, S.-J. Choi* (†These authors equally contributed to this work, *co-corresponding authors) "Hybrid complementary inverter based on carbon nanotube and IGZO thin-film transistors with controlled process conditions" Journal of Alloys and Compounds, DOI: 10.1016/j.jallcom.2018.05.188, 2018-05
  • 29 Y. Lee†, J. Han†, B. Choi, J. Yoon, J. Park, Y. Kim, J. Lee, D. H. Kim, D. M. Kim, M. Lim, M.-H. Kang, S. Kim*, S.-J. Choi* (†These authors equally contributed to this work) "Three-Dimensionally Printed Micro-electromechanical Switches" ACS Applied Materials & Interfaces, DOI: 10.1021/acsami.8b01455, 2018-04
  • 30 J. Kim, H. Yoo, H. Lee, S. K. Kim, S. Choi, S.-J. Choi, D. H. Kim, D. M. Kim "Comprehensive separate extraction of parasitic resistances in MOSFETs considering the gate bias-dependence and the asymmetric overlap length" Microelectronics Reliability, DOI: 10.1016/j.microrel.2018.04.011, 2018-04
  • 31 M. J. Lee, S. Lee, S. Lee, K. Balamurugan, C. Yoon, J. T. Jang, S.-H. Kim, D.-H. Kwon, M. Kim, J.-P. Ahn, D. H. Kim, J.-G. Park, B. H. Park "Synaptic devices containing two-dimensional layered single-crystal chromium thiophosphate (CrPS4)" NPG Asia Materials, DOI:10.1038/s41427-018-0016-7, 2018-04
  • 32 S. K. Kim, J.-P. Shim, D.-M. Guem, J. Kim, C. Z. Kim, H.-S. Kim, J. D. Song, S.-J. Choi, D. H. Kim, W. J. Choi, H.-J. Kim, D. M. Kim, S. Kim "Impact of Ground Plane Doping and Bottom-Gate Biasing on Electrical Properties in In0.53Ga0.47As-OI MOSFETs and Donor Wafer Reusability Toward Monolithic 3-D Integration With In0.53Ga0.47As Channel" IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 65, no. 5, pp. 1862-1868, DOI: 10.1109/TED.2018.2810304, 2018-03
  • 33 J. T. Jang, S.-J. Choi, D. M. Kim, D. H. Kim "The Calculation of Negative Bias Illumination Stress-Induced Instability of Amorphous InGaZnO Thin-Film Transistors for Instability-Aware Design" IEEE Transactions on Electron Devices, vol. 65, no. 3, pp. 1002-1008, DOI: 10.1109/TED.2018.2797208, 2018-03
  • 34 J. Jang†, S. Choi†, J. Kim, T. J. Park, B.-G. Park, D. M. Kim, S.-J. Choi, S. M. Lee, D. H. Kim, H.-S. Mo (†These authors equally contributed to this work) "Effect of liquid gate bias rising time in pH sensors based on Si nanowire ion sensitive field effect transistors" Solid State Electronics, vol. 140, pp. 109-114, DOI: 10.1016/j.sse.2017.10.027, 2018-02
  • 35 J. T. Jang, D. Ko, G. Ahn, H. R. Yu, H. Jung, Y. S. Kim, C. Yoon S. Lee, B. H. Park, S.-J. Choi, D. M. Kim, D. H. Kim "Effect of oxygen content of the LaAlO3 layer on the synaptic behavior of Pt/LaAlO3/Nb-doped SrTiO3 memristors for neuromorphic applications" Solid State Electronics, vol. 140, pp. 139-143, DOI: 10.1016/j.sse.2017.10.032, 2018-02
  • 36 J. T. Jang†, D. Ko†, S. Choi, H. Kang, J.-Y. Kim, H. R. Yu, G. Ahn, H. Jung, J. Rhee, S.-J. Choi, D. M. Kim, D. H. Kim(†These authors equally contributed to this work) "Effects of structure and oxygen flow rate on the photo-response of amorphous IGZO-based photodetector devices" Solid State Electronics, vol. 140, pp. 115-121, DOI: 10.1016/j.sse.2017.10.028, 2018-02
  • 37 S. Kim†, M. Lim†, Y. Kim†, H.-D. Kim, S.-J. Choi* (†These authors equally contributed to this work) "Impact of Synaptic Device Variations on Pattern Recognition Accuracy in a Hardware Neural Network" Scientific Reports, vol. 8, p. 2638, DOI:10.1038/s41598-018-21057-x, 2018-02
  • 38 R. Lee, D. W. Kwon, S. Kim, B.-G. Park, S. Kim, H.-S. Mo, D. H. Kim "Nanowire size dependence on sensitivity of silicon nanowire field-effect transistor-based pH sensor" Japanese Journal of Applied Physics, vol. 56, no. 12, p. 124001, DOI: 10.7567/JJAP.56.124001, 2017-11
  • 39 R. Lee, D. W. Kwon, S. Kim, H.-S. Mo, D. H. Kim, B.-G. Park "New Type of Ion-Sensitive Field-Effect Transistor with Sensing Region Separate from Gate-Controlled Region" Journal of Nanoscience and Nanotechnology, vol.17, no.11, pp.8280–8284, DOI: 10.1166/jnn.2017.15123, 2017-11
  • 40 S. Kim, D. W. Kwon, R. Lee, H.-S. Mo, D. H. Kim, B.-G. Park "Novel Fabrication Method for Forming Damage-Free Sensing Oxide and Threshold Voltage-Tunable Complementary Metal-Oxide Semiconductor in a pH Sensor-CMOS Hybrid System" Journal of Nanoscience and Nanotechnology, vol. 17, no. 11, pp.8265–8270, DOI:10.1166/jnn.2017.15122, 2017-11
  • 41 D. W. Kwon, S. Kim, R. Lee, Hy.-S. Mo, D. H. Kim,B.-G. Park "Macro modeling of ion sensitive field effect transistor with current drift" Sensors and Actuators B: Chemical, Vol. 249, pp.564-570, DOI:10.1016/j.snb.2017.03.110, 2017-10
  • 42 H. Jung, S. Choi, J. T. Jang, J. Yoon, J. Lee, Y. Lee, J. Rhee, G. Ahn, H. R. Yu, D. M. Kim, S.-J. Choi, D. H. Kim* "Universal model of bias-stress-induced instability in inkjet-printed carbon nanotube networks field-effect transistors" Solid State Electronics, https://doi.org/10.1016/j.sse.2017.10.022, 2017-10
  • 43 J. Rhee, S. Choi, H. Kang, J.-Y. Kim, D. Ko, G. Ahn, H. Jung, S.-J. Choi, D. M. Kim, D. H. Kim* "The electron trap parameter extraction-based investigation of the relationship between charge trapping and activation energy in IGZO TFTs under positive bias temperature stress" Solid State Electronics, http://dx.doi.org/10.1016/j.sse.2017.10.024, 2017-10
  • 44 Y. Lee, J. Yoon, B. Choi, H. Lee, J. Park, M. Jeon, J. Han, J. Lee, Y. Kim, D. H. Kim, D. M. Kim, and S.-J. Choi* "Semiconducting carbon nanotube network thin-film transistors with enhanced inkjet-printed source and drain contact interfaces" Applied Physics Letters, vol. 111, no. 17, pp. 173108-173111, DOI: 10.1063/1.5009656, 2017-10
  • 45 J.-H. Ahn, S.-J Choi, M. Im, S. Kim, C.-H. Kim, J.-Y. Kim, T. J. Park, S. Y. Lee, Y.-K. Choi* "Charge and dielectric effects of biomolecules on electrical characteristics of nanowire FET biosensors" Applied physics Letters, vol. 111, no. 11, p. 3701, DOI: 10.1063/1.5003106, 2017-09
  • 46 S. K. Kim, J.-P. Shim, D.-M. Geum, C. Z. Kim, H.-S. Kim, J. D. Song, S.-J. Choi, D. H. Kim, W. J. Choi, H.-J. Kim, D. M. Kim, and S. Kim "Fabrication of InGaAs-on-insulator Substrates Using Direct Wafer Bonding and Epitaxial Lift-off Techniques" IEEE Transactions on Electron Devices, vol. 64, no. 9, pp. 3601–3608, DOI: 10.1109/TED.2017.2722482, 2017-09
  • 47 J. Lee†, M. Lim†, J. Yoon, M. S. Kim, B. Choi, D. M. Kim, D. H. Kim, I. Park, S.-J. Choi ( †These authors equally contributed to this work) "Transparent, flexible strain sensor based on a solution-processed carbon nanotube network" ACS Applied Materials & Interfaces, DOI: 10.1021/acsami.7b03184, 2017-07
  • 48 J. Yoon§, M. Lim§, B. Choi, D. M. Kim, D. H. Kim, S. Kim*, and S.-J. Choi* ( §These authors equally contributed to this work, *co-corresponding authors) "Determination of individual contact interfaces in carbon nanotube network-based transistors" Scientific Reports, Scientific reports 7, DOI: 10.1038/s41598-017-05653-x, 2017-07
  • 49 M. Jeon§, B. Choi§, J. Yoon, D. M. Kim, D. H. Kim, I. Park*, and S.-J. Choi* (§These authors equally contributed to this work, *co-corresponding authors) "Enhanced sensing of gas molecules by a 99.9% semiconducting carbon nanotube-based field-effect transistor sensor" Applied Physics Letters, Vol. 111, no. 2, p. 022102, DOI: 10.1063/1.4991970, 2017-07
  • 50 H. J. Kim, H. Zheng, J.-S. Park, D. H. Kim, C. J. Kang, J. T. Jang, D. H. Kim, and T.-S. Yoon "Artificial synaptic characteristics with strong analog memristive switching in a Pt/CeO2/Pt structure" Nanotechnology , vol. 28, no. 28, p. 285203, DOI: 10.1088/1361-6528/aa712c, 2017-06
  • 51 H. Lee§, J. Kim§, J. Kim, S. K. Kim, Y. Lee, J.-Y. Kim, J. T. Jang, J. Park, S.-J. Choi, D. H. Kim, and D. M. Kim( §These authors equally contributed to this work) "Investigation of Infrared Photo-Detection Through Subgap Density-of-States in a-InGaZnO Thin-Film Transistors" IEEE Electron Device Letters, VOL. 38, NO. 5, DOI: 10.1109/LED.2017.2686844, 2017-05
  • 52 S. Choi, J. Jang, H. Kang, J. H. Baeck, J. U. Bae, K.-S. Park, S. Y. Yoon, I. B. Kang, D. M. Kim, S.-J. Choi, Y.-S. Kim, S. Oh, and D. H. Kim "Systematic Decomposition of the Positive Bias Stress Instability in Self-Aligned Coplanar InGaZnO Thin-Film Transistors" IEEE Electron Device Letters, VOL. 38, NO. 5, DOI: 10.1109/LED.2017.2681204, 2017-05
  • 53 S. Kim, J. Kim, J. Jang, H.-S. Mo, D. M. Kim, S.-J. Choi, B.-G. Park, D. H. Kim, J. Park "Sampling time and pH-dependences of SiNW ISFET-based biosensors" Journal of Nanoscience and Nanotechnology, Vol. 17, NO. 5, pp. 3257-3260, DOI:10.1166/jnn.2017.14038, 2017-05
  • 54 J. Jang, J. Kim, S. Kim, H.-S. Mo, D. M. Kim, S.-J. Choi, B.-G. Park, D. H. Kim, J. Park "Analysis and modeling on the pH-dependent current drift of Si nanowire ion-sensitive field effect transistor (ISFET)-based biosensors" Journal of Nanoscience and Nanotechnology, Vol. 17, NO. 5, pp. 3146–3150, DOI: 10.1166/jnn.2017.14037, 2017-05
  • 55 J.-H. Ahn, D.-I. Moon, S.-W. Ko, C.-H. Kim, J.-Y. Kim, M.-S. Kim, M. L. Seol, J.-B. Moon, J.-M. Choi, J.-S. Oh, S.-J. Choi, and Y.-K. Choi "A SONOS device with a separated charge trapping layer for improvement of charge injection" AIP Advances, vol. 7, no. 3, DOI: 10.1063/1.4978322, 2017-03
  • 56 D. H. Kim, S. Choi, J. Jang, H. Kang, D. M. Kim, S.-J. Choi, Y.-S. Kim, S. Oh, J. H. Baeck, J. U. Bae, K.-S. Park, S. Y. Yoon, and In B. Kang "Experimental decomposition of the positive bias temperature stress-induced instability in self-aligned coplanar InGaZnO thin-film transistors and its modeling based on the multiple stretched-exponenti" Journal of the SID(Society of Information Display), Vol. 25, No.2, pp.98-107, DOI : 10.1002/jsid.531, 2017-02
  • 57 C. Yoon, J. H. Lee, S. Lee, J. H. Jeon, J. T. Jang, D. H. Kim, Y. H. Kim, and B. H. Park "Synaptic Plasticity Selectively Activated by Polarization-Dependent Energy-Efficient Ion Migration in an Ultrathin Ferroelectric Tunnel Junction" Nano Letters, vol. 17, no. 3, pp 1949–1955, DOI: 10.1021/acs.nanolett.6b05308, 2017-02
  • 58 S. Kim§, B. Choi§, M. Lim§, J. Yoon, J. Lee, H.-D. Kim, S.-J. Choi ( §These authors equally contributed to this work) "Pattern Recognition Using Carbon Nanotube Synaptic Transistors with an Adjustable Weight Update Protocol" ACS nano, DOI: 10.1021/acsnano.6b07894, 2017-02
  • 59 H. Lee, J. Kim, S. Choi, S. K. Kim, J. Kim, J. Park, S.-J. Choi, D. H. Kim, D. M. Kim "Band-Bending Effect in the Characterization of Subgap Density-of-States in Amorphous TFTs Through Fully Electrical Techniques" IEEE Electron Device Letters, vol. 38, no. 2, DOI: 10.1109/LED.2016.2636301, 2017-02
  • 60 S. K. Kim, D.-M. Geum, J.-P. Shim, C. Z. Kim, H.-J. Kim, J. D. Song, W. J. Choi, S.-J. Choi, D. H. Kim, S. Kim, D. M. Kim "Fabrication and characterization of Pt/Al2O3/Y2O3/In0.53Ga0.47As MOSFETs with low interface trap density" Applied Physics Letters, vol. 110, no. 4, DOI: 10.1063/1.4974893, 2017-01
  • 61 J. Lee, J. Yoon, B. Choi, D. Lee, D. M. Kim, D. H. Kim, Y.-K. Choi, S.-J. Choi "Ink-jet printed semiconducting carbon nanotube ambipolar transistors and inverters with chemical doping technique using polyethyleneimine" Applied Physics Letters, vol. 109, no. 26, p. 263103, DOI: 10.1063/1.4973360, 2016-12
  • 62 C.-Y. Jeong, H.-J. Kim, D.-H. Kim, H.-S. Kim, T. S. Kim, J.-B. Seon, S. Lee, D. H. Kim, H.-I. Kwon "Investigation of Carrier Transport Mechanism in High Mobility ZnON Thin-Film Transistors" IEEE ELECTRON DEVICE LETTERS, vol. 37, no. 12, pp.1570-1573 DOI: 10.1109/LED.2016.2619684, 2016-12
  • 63 D. Lee, B.-H. Lee, J. Yoon, D.-C. Ahn, J.-Y.Park, J. Hur, M.-S. Kim, S.-B. Jeon, M.-H. Kang, K. Kim, M. Lim, Y.-K. Choi*, S.-J. Choi* (*co-corresponding authors) "Three-dimensional Fin-structured Semiconducting Carbon Nanotube Network Transistor" ACS nano, vol. 10, no. 12, pp. 10894-10900, DOI: 10.1021/acsnano.6b05429, 2016-11
  • 64 S. Kim, D. W. Kwon, R. Lee, D. H. Kim, B.-G. Park "Investigation of drift effect on silicon nanowire field effect transistor based pH sensor" Japanese Journal of Applied Physics, vol. 55, no. 6S1, DOI: 10.7567/JJAP.55.06GG01, 2016-04
  • 65 C.-Y. Jeong, H.-J. Kim, D.-H. Kim, H.-S. Kim, E. S. Kim, T. S. Kim, J. S. Park, J.-B. Seon, K. S. Son, S. Lee, S.-H. Cho, Y. S. Park, D. H. Kim, H.-I. Kwon "Investigation of Low-Frequency Noise Properties in High-Mobility ZnON Thin-Film Transistors" IEEE Electron Device Letters, vol. 37, no. 6, pp. 739-742, DOI: 10.1109/LED.2016.2558204, 2016-06
  • 66 J. Kim§, H. Lee§, S. K. Kim, J. Kim, J. Park, S.-J. Choi, D. H. Kim, D. M. Kim ( §These authors equally contributed to this work) "Hybrid Open Drain Method and Fully Current- Based Characterization of Asymmetric Resistance Components in a Single MOSFET" IEEE Transactions on Electron Devices, Vol. 63, no. 11, pp. 4196-4200, DOI: 10.1109/TED.2016.2607721, 2016-09
  • 67 J. Yoon§, J. Lee§, B. Choi§, D. Lee, D. H. Kim, D. M. Kim, D.-I. Moon, M. Lim, S. Kim, S.-J. Choi ( §These authors equally contributed to this work) "Flammable carbon nanotube transistors on a nitrocellulose paper substrate for transient electronics" Nano Research, DOI: 10.1007/s12274-016-1268-6, 2016-09
  • 68 K. M. Lee, J. T. Jang, Y.-J. Baek, H. Kang, S. Choi, S.-J. Choi, D. M. Kim, C. J. Kang, T.-S. Yoon, H.-S. Mo, D. H. Kim "The γ -Fe2O3 Nanoparticle Assembly-Based Memristor Ratioed Logic and Its Optical Tuning" IEEE Electron Device Letters, Vol. 37, no. 8, pp. 986-989, DOI: 10.1109/LED.2016.2582523 , 2016-08
  • 69 H. M. Choi, D. J. Shin, J. H. Lee, H.-S. Mo, T. J. Park, B.-G. Park, D. M. Kim, S.-J. Choi, D. H. Kim, J. Park "The Analysis of Characteristics in Dry and Wet Environments of Silicon Nanowire-Biosensor" Journal of Nanoscience and Nanotechnology, vol. 16, no. 5, pp. 4901–4905, DOI: 10.1166/jnn.2016.12247 , 2016-05
  • 70 J. Yoon, B. Choi, S. Choi, J. Lee, J. Lee, M. Jeon, Y Lee, J. Han, J. Lee, D. M. Kim, D. H. Kim, S. Kim, S.-J. Choi "Evaluation of interface trap densities and quantum capacitance in carbon nanotube network thin-film transistors" Nanotechnology, vol. 27, no. 29, p. 295704, DOI: 10.1088/0957-4484/27/29/295704, 2016-06
  • 71 D. Kwon, J. H. Lee, S. Kim, R. Lee, H. Mo, J. Park, D. H. Kim, B.-G. Park "Drift-Free pH Detection With Silicon Nanowire Field-Effect Transistors" IEEE Electron Device Letters, vol. 37, no. 5, pp. 652-655, DOI: 10.1109/LED.2016.2542846, 2016-05
  • 72 S. K. Kim, J. Lee, D.-M. Geum, M.-S. Park, W. J. Choi, S.-J. Choi, D. H. Kim, S. Kim*, D. M. Kim* (*co-corresponding authors) "Fully subthreshold current-based characterization of interface traps and surface potential in III–V-on-insulator MOSFETs" Solid-State Electronics, vol. 122, pp. 8-12, DOI: 10.1016/j.sse.2016.04.011, 2016-04
  • 73 S. Kim, H.-D. Kim*, S.-J. Choi* (*co-corresponding authors) "Compact Two-State-Variable Second-Order Memristor Model" Small, vol. 12, no. 12, pp. 3320-3326, DOI: 10.1002/smll.201600088, 2016-05
  • 74 D. Lee, J. Yoon, J. Lee, B.-H. Lee, M.-L. Seol, H. Bae, S. B. Jeon, H. Seong, S. G. Im, S.-J. Choi*, Y.-K. Choi* (*co-corresponding authors) "Logic circuits composed of flexible carbon nanotube thin-film transistor and ultra-thin polymer gate dielectric" Scientific Reports, Scientific reports 6, DOI: 10.1038/srep26121, 2016-05
  • 75 J. Y. Choi, S. Kim, D. H. Kim, S. Y. Lee "Role ofmetal capping layer on highly enhanced electrical performance of In-free Si–Zn–Sn–O thin film transistor" Thin Solid Films, vol. 594, pp. 293–298, 2015-11
  • 76 S. Kim, H.-D. Kim, S.-J. Choi* (*corresponding author) "Intrinsic threshold switching responses in AsTeSi thin film" Journal of Alloys and Compounds, vol. 667, pp. 91–95, DOI: 10.1016/j.jallcom.2016.01.146, 2016-01
  • 77 S. Choi, H. Kim, C. Jo, H.-S. Kim, S.-J. Choi, D. M. Kim, J. Park, D. H. Kim "The Effect of Gate and Drain Fields on the Competition Between Donor-Like State Creation and Local Electron Trapping in In–Ga–Zn–O Thin Film Transistors Under Current Stress" IEEE Electron Device Letters, vol. 36, no. 12, pp. 1336-1339, 2015-12
  • 78 B. Choi, D. Lee, J.-H. Ahn, J. Yoon, J. Lee, M. Jeon, D. M. Kim, D. H. Kim , I. Park, Y.-K. Choi, and S.-J Choi "Investigation of optimal hydrogen sensing performance in semiconducting carbon nanotube network transistors with palladium electrodes" Applied Physics Letters, vol. 107, p. 193108, 2015-11
  • 79 S. Kim†, J. Yoon†, H.-D. Kim†, and S.-J. Choi ( †These authors equally contributed to this work) "Carbon Nanotube Synaptic Transistor Network for Pattern Recognition" ACS Appl. Mater. Interfaces, pp. 25479–25486, 2015-10
  • 80 J. Kim, S. Choi, J. Jang, J. T. Jang, J. Kim, S.-J. Choi, D. M. Kim, and D. H. Kim "Analysis of Instability Mechanism under Simultaneous Positive Gate and Drain Bias Stress in Self-Aligned Top- Gate Amorphous Indium-Zinc-Oxide Thin-Film Transistors" JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, vol. 15, no. 5, pp. 526-532, 2015-10
  • 81 H. Kang, J. T. Jang, J. Kim, S.-J. Choi, D. M. Kim, and D. H. Kim "Comparative Analysis on Positive Bias Stress-Induced Instability under High VGS/Low VDS and Low VGS/High VDS in Amorphous InGaZnO Thin-Film Transistors" JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, vol. 15, no. 5, pp.519-525, 2015-10
  • 82 S. Choi, Y. Kang, J. Kim, J. Kim, S.-J. Choi, D. M. Kim, H.-Y. Cha, H. Kim, and D. H. Kim "Frequency-dependent C-V Characteristic-based Extraction of Interface Trap Density in Normally-off Gate-recessed AlGaN/GaN Heterojunction Field-effect Transistors" JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, vol. 15, no. 5, pp.497-503, 2015-10
  • 83 J. Lee, S. Choi, S. K. Kim, S.-J. Choi, D. H. Kim, J. Park, and D. M. Kim "Modeling and Characterization of the Abnormal Hump in n-Channel Amorphous-InGaZnO Thin-Film Transistors After High Positive Bias Stress" IEEE Electron Device Letters, vol. 36, no. 10, pp.1047-1049, 2015-10
  • 84 S. Kim, H.-D. Kim, S.-J. Choi "Numerical study of read scheme in one-selector one-resistor crossbar array" Solid-State Electronics, vol. 114 pp. 80-86, 2015-08
  • 85 B. Choi, J.-H. Ahn, J. Lee, J. Yoon, J. Lee, M. Jeon, D. M. Kim, D. H. Kim, I. Park, S.-J. Choi "A bottom-gate silicon nanowire field-effect transistor with functionalized palladium nanoparticles for hydrogen gas sensors" Solid-State Electronics, vol. 104 pp. 76-19, 2015-08
  • 86 H. Choi, J. Lee, H. Bae, S.-J. Choi, D. H. Kim, D. M. Kim, "Bias-Dependent Effective Channel Length for Extraction of Subgap DOS by Capacitance–Voltage Characteristics in Amorphous Semiconductor TFTs" IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 62. no. 8, pp. 2689-2694, 2015-08
  • 87 J. T. Jang, J. Park, B. D. Ahn, D. M. Kim, S.-J. Choi, H.-S. Kim, D. H. Kim "Study on the Photoresponse of Amorphous In−Ga−Zn−O and Zinc Oxynitride Semiconductor Devices by the Extraction of Sub-Gap- State Distribution and Device Simulation" ACS Appl. Mater. Interfaces, vol. 28. no. 7, pp. 15570-15577, 2015-06
  • 88 J. Lee,J. Jang, B. Choi, J. Yoon, J.-Y. Kim, Y.-K. Choi, D. M. Kim, D. H. Kim, S.-J. Choi "A Highly Responsive Silicon Nanowire/Amplifier MOSFET Hybrid Biosensor" Scientific Reports, Scientific Reports 5, 2015-07
  • 89 S. Choi, H. Kim, C. Jo, H.-S. Kim, S.-J. Choi, D. M. Kim, D. H. Kim "A Study on the Degradation of In–Ga–Zn–O Thin-Film Transistors Under Current Stress by Local Variations in Density of States and Trapped Charge Distribution" IEEE ELECTRON DEVICE LETTERS, vol. 36. no. 7, pp. 690-692, 2015-06
  • 90 K. M. Lee, J. Jang, S.-J. Choi, D. M. Kim,K. R. Kim,D. H. Kim "Extraction of Propagation Delay-Correlated Mobility and Its Verification for Amorphous InGaZnO Thin-Film Transistor-Based Inverters" IEEE Transactions on Electron Devices, vol. 62. no. 5, pp. 1504-1510, 2015-05
  • 91 J. T. Jang, J. Park, B. D. Ahn, D. M. Kim, S.-J. Choi, H.-S. Kim, D. H. Kim "Effect of direct current sputtering power on the behavior of amorphous indium-galliumzinc- oxide thin-film transistors under negative bias illumination stress" Applied Physics Letters, vol. 106, p. 123505, 2015-04
  • 92 J. S. Hwang, H. Bae, J. Lee, S.-J. Choi, D. H. Kim, D. M. Kim "Sub-Bandgap Photonic Capacitance-Voltage Method for Characterization of the Interface Traps in Low Temperature Poly-Silicon Thin-Film Transistors" IEEE Electron Device Letters, vol. 36, no. 4, pp.339-341, 2015-04
  • 93 J. Lee, H. Bae, J. S. Hwang, J. Ahn, J. T. Jang, J. Yoon, S.-J. Choi, D. H. Kim, D. M. Kim "Modeling and Separate Extraction Technique for Gate Bias-Dependent Parasitic Resistances and Overlap Length in MOSFETs" IEEE Transactions on Electron Devices, vol. 62, no. 3, pp. 1063-1067, 2015-03
  • 94 B. Choi, J. Lee, J. Yoon, J.-H. Ahn, T. J. Park, D. M. Kim, D. H. Kim, S.-J. Choi "TCAD-Based Simulation Method for the Electrolyte–Insulator–Semiconductor Field-Effect Transistor" IEEE Transactions on Electron Devices, vol. 62, no. 3, pp. 1072-1075, 2015-03
  • 95 S. Jun, H. Bae, H. Kim, J. Lee, S.-J. Choi, D. H. Kim,D. M. Kim "Dual-Sweep Combinational Transconductance Technique for Separate Extraction of Parasitic Resistances in Amorphous Thin-Film Transistors" IEEE Electron Device Letters, vol. 36, no. 2, pp. 144-146, 2015-02
  • 96 S.-J. Choi, P. Bennett, D. Lee, and J. Bokor "Highly uniform carbon nanotube nanomesh network transistors" Nano research, vol.8, pp 1320-1326, 2014-12
  • 97 J. Yoon, D. Lee, C. Kim, J. Lee, B. Choi, D. M. Kim, D. H. Kim, M. Lee, Y.-K. Choi, and S.-J. Choi "Accurate extraction of mobility in carbon nanotube network transistors using C-V and IV measurements" Applied Physics Letters, vol. 105, p. 212103, 2014-11
  • 98 J. Jang, D. G. Kim, D. M. Kim, S.-J. Choi, J.-H. Lim, J.-H. Lee, Y.-S. Kim, B. D. Ahn, and D. H. Kim "Investigation on the negative bias illumination stress-induced instability of amorphous indium-tin-zinc-oxide thin film transistors" Applied Physics Letters, vol. 105, p. 152108, 2014-10
  • 99 E. K.-H. Yu, S. Jun, D. H. Kim, and J. Kanicki "Density of states of amorphous In-Ga-Zn-O from electrical and optical characterization" J. Appl. Phys., vol. 116. 154505 -1-6, 2014-10
  • 100 H. Bae, H. Seo, S. Jun, H. Choi, J. Ahn, J. Hwang, J. Lee, S. Oh, J.-U. Bae, S.-J. Choi, D. H. Kim, and D. M. Kim "Fully Current-Based Sub-Bandgap Optoelectronic Differential Ideality Factor Technique and Extraction of Subgap DOS in Amorphous Semiconductor TFTs" IEEE Transactions on Electron Devices, vol. 61. no. 10. pp, 3566 - 3569, 2014-10

Conference

  • 1 S. Choi, J. Kim, J. Yoon, I. Chae, S. -J. Choi, D. M. Kim, H. S. Mo, and D. H. Kim "The Module of Gain-controllable Amplifier Readout Circuits based on Si Nanowire ISFET for Biochips for Optimization of Dynamic Range, Linearity, and Resolution" EEE 49th ESSDERC, pp. 110-113, DOI : 978-1-7281-1539-9/19/$31.00, 2019-09
  • 2 Y. Lee, J. Yoon, H.-J. Kim, G.-H. Park, D. H. Kim, D. M. Kim, M.-H. Kang* and S.-J. Choi*(*co-corresponding authors) "Carbon Nanotube Network Transistor for a Physical Unclonable Functions-based Security Device" The 19th IEEE International Conference on Nanotechnology, 2019-07
  • 3 S. Park†, J. T. Jang†, S.-J. Choi, D. M. Kim and D. H. Kim*( †These authors equally contributed to this work) "Synaptic behavior of flexible IGZO TFTs with Al2O3 gate insulator by low temperature ALD" The 19th IEEE International Conference on Nanotechnology, 2019-07
  • 4 J. T. Jang, J. Min, D. Kim, J. Park, S.-J. Choi, D. M. Kim, and D. H. Kim "SPICE compact model of IGZO memristor based on non-quasi statically updated Schottky barrier height" The 19th IEEE International Conference on Nanotechnology, 2019-07
  • 5 D. Kim, J. T. Jang, J. Min, J. Park, D. M. Kim, S.-J Choi, H.-S. Mo, D. H. Kim "Influence of the Oxygen Content in IGZO on the Pattern Recognition Rate in Pd/IGZO/p+-Si Memristors" The 26th Korean Conference on Semiconductors, 2019-02
  • 6 Y. Lee†, H. Jung†, J. Yoon, J. T. Jang, B. Choi, H.-J. Kim, G.-H. Park, M.-H. Kang, D. M. Kim, D. H. Kim*, S.-J. Choi*( †These authors equally contributed to this work)(*co-corresponding authors) "Hybrid integration of carbon nanotube and amorphous InGaZnO thin-film transistors" The 26th Korean Conference on Semiconductors, 2019-02
  • 7 J. Min, J. T. Jang, D. Kim, J. Park, S.-J. Choi, D. M. Kim, D. H. Kim "Demonstration of both the digital and analog memory operations of the IGZO resistive-switching devices by a control of metal electrode/IGZO combination" The 26th Korean Conference on Semiconductors, 2019-02
  • 8 J. Park, J. Jang, D. Kim, J. Min, G. Ahn, S.-J Choi, D. M. Kim, H.-S. Mo, D. H. Kim "Empirical Model of Relationship between the Operation Frequency and the Size of Crossbar Array in the IGZO ReRAM-based Reconfigurable Logic" The 26th Korean Conference on Semiconductors, 2019-02
  • 9 J. T. Jang, J. Min, D. Kim, J. Park, S.-J. Choi, D. M. Kim, D. H. Kim "SPICE compact model of the IGZO memristor considering both the metal electrode and the process sequence of the deposition of metal and IGZO film" The 26th Korean Conference on Semiconductors, 2019-02
  • 10 J. Yoon, J. Park, B. Choi, Y. Lee, Y. Kim, H.-J. Kim, D. M. Kim, D. H. Kim, S.-J. Choi "3D printing-based pressure sensor with porous dielectric elastomer for healthcare monitoring" The 26th Korean Conference on Semiconductors, 2019-02
  • 11 H. B. Yoo, S. K. Kim, J. Kim, J. Yu, J. Kim, S.-J. Choi, D. H. Kim, D. M. Kim "Characterization of Subgap Density-of-States from Sub-bandgap Optical Charge Pumping in In0.53Ga0.47As MOSFETs" The 26th Korean Conference on Semiconductors, 2019-02
  • 12 S. Park, S. Choi, J. Rhee, S.-J. Choi, D. M. Kim, D. H. Kim "Observation of the peroxide formation and a negative ΔVT under current-driving condition in IZO TFTs with self-aligned top-gate structure" The 26th Korean Conference on Semiconductor, 2019-02
  • 13 Y. Seo, H. Jung, S. Park, J. T. Jang, S. Choi, D. M. Kim, S.-J. Choi, D. H. Kim "Subgap DOS-based analysis on the electrical/mechanical stress-induced degradation of flexible IGZO TFTs" The 26th Korean Conference on Semiconductors, 2019-02
  • 14 G.-H. Park, Y. Kim, B. Choi, J. Yoon, Y. Lee, J. Park, H.-J. Kim, M.-H. Kang, D. M. Kim, D. H. Kim, S.-J. Choi "High-performance semiconducting carbon nanotube thin-film transistors with a porous gate dielectric layer" The 26th Korean Conference on Semiconductors, 2019-02
  • 15 H.-J. Kim, B. Choi, J. Yoon, Y. Lee, M.-H. Kang, D. M. Kim, D. H. Kim, S.-J. Choi "Flexible 99% semiconducting carbon nanotube network transistors for hydrogen sensor application" The 26th Korean Conference on Semiconductors, 2019-02
  • 16 Y. Lee, B. Choi, J. Yoon, J. Park, Y. Kim, H. B. Yoo, J. T. Jang, G. Ahn, H. R. Yu, H.-J. Kim, D. H. Kim, D. M. Kim, S. Kim*, S.-J. Choi*(co-corresponding authors) "Semiconducting carbon nanotube Schottky diode and integrated circuit applications" IEEE International Conference on Nanotechnology, 2018-07
  • 17 S. Choi, S. Kim, J. Jang, G. Ahn, J. T. Jang, T. J. Park, B.-G Park, D. M. Kim, S.-J. Choi, S. M. Lee, H.-S. Mo and D. H. Kim "Artificial Synapse and Neuron Combining the Ion-Sensitive Field-Effect Transistor and Memristor" IMCS 2018, 2018-07
  • 18 J. T. Jang, H. R. Yu, G. Ahn, S.-J. Choi, D. M. Kim, Y.-S. Kim, S. Oh, J. H. Baeck, J. U. Bae, K.-S. Park, S. Y. Yoon, I. B. Kang, and D. H. Kim "Universal Method to Determine the Dynamic NBIS- and PBS-induced Instabilities on Self-aligned Coplanar InGaZnO Thin-film Transistors" Society of Information Display, 2018-05
  • 19 J. T. Jang, G. Ahn, D. Ko, H. R. Yu, H. Jung, C. Yoon, S. Lee, B. H. Park, H.-S. Mo, S.-J. Choi, D. M. Kim, and D. H. Kim "SPICE-based Simulation Study of Cu/AlOx/Pt Conductive-Bridge Resistive Access Memory-CMOS Integrated Circuit for Reconfigurable Logic" The 24th Korean Conference on Semiconductors, 2018-02
  • 20 B. Choi, J. Yoon, Y. Lee, J. Han, J. Lee, Y. Kim, J. Park, D. M. Kim, D. H. Kim, S.-J. Choi* "A pseudo-CMOS inverter with top-gated 99% semiconducting carbon nanotube network transistors" The 24th Korean Conference on Semiconductors, 2018-02
  • 21 Y. Lee, B. Choi, J. Yoon, J. Han, J. Lee, J. Park, Y. Kim, D. M. Kim, D. H. Kim, and S.-J. Choi* "99% semiconducting carbon nanotube-based diode and application in logic circuits" The 24th Korean Conference on Semiconductors, 2018-02
  • 22 J. Park, B. Choi, J. Yoon, Y. Lee, J. Han, J. Lee, Y. Kim, D. M. Kim, D. H. Kim, and S.-J. Choi* "Directly drawn carbon nanotube transistors with a high device yield and uniform performance" The 24th Korean Conference on Semiconductors, 2018-02
  • 23 Y. Kim, B. Choi, J. Yoon, Y. Lee, J. Han, J. Lee, J. Park, D. M. Kim, D. H. Kim, and S.-J. Choi* "Optimization of the performance in humidity sensor based on pre-separated 99% metallic single-walled carbon nanotube" The 24th Korean Conference on Semiconductors, 2018-02
  • 24 G. Ahn, J. T. Jang, D. Ko, H. Yu, H. Jung, J. Rhee, H.-S. Mo, S.-J. Choi, D. M. Kim, D. H. Kim "Analysis of LRS retention fail based on Joule heating effect in InGaZnO RRAM" The 24th Korean Conference on Semiconductors, 2018-02
  • 25 S. Choi, J.-Y. Kim, J. Kim, J. Rhee, H. R. Yu, H. Kang, S.-J. Choi, D. M. Kim, and D. H. Kim "Extraction Method of Temperature-Independent Subgap Density-of-States of a-IGZO TFTs by using Fermi-Dirac distribution" The 24th Korean Conference on Semiconductors, 2018-02
  • 26 H. R. Yu, J. T. Jang, G. Ahn, S.-J. Choi, D. M. Kim, and D. H. Kim "Study on Negative Bias Stress-induced Instability in Zinc Oxynitride Thin-Film Transistors using Systematic Decomposition" The 24th Korean Conference on Semiconductors, 2018-02
  • 27 J. T. Jang, S.-J. Choi, D. M. Kim, D. H. Kim "Activation Energy Window-Based Modeling on the NBIS-induced Instability in Amorphous InGaZnO Thin-Film Transistors" ICEIC, 2018-01
  • 28 J. Yoon†, B. Choi†, Y. Lee, J. Han, J. Lee, J. Park, Y. Kim, D. M. Kim, D. H. Kim, M.-H. Kang, S. Kim*, S.-J. Choi*( †These authors equally contributed to this work)(*co-corresponding authors) "Monolithically 3D-Printed Pressure Sensors for Application in Electronic Skin and Healthcare Monitoring" IEDM, 2017-12
  • 29 J. Rhee, S. Choi, J.-Y. Kim, S.-J. Choi, D. M. Kim,and D. H. Kim* "Relationship between the tunneling distance and stretched-exponential function model on the positive bias stress-induced charge trapping in IGZO TFTs" IMID 2017, 2017-08
  • 30 D. H. Kim, S. Choi, J. Jang, H Kang, D. M. Kim, S.-J. Choi, Y.-S. Kim, S. Oh, J. H. Baeck, J. U. Bae, K.-S. Park, S. Y. Yoon, and In B. Kang "Experimental Decomposition of the Positive Gate-bias Temperature Stressinduced Instability and Its Modeling in InGaZnO Thin-film Transistors" IMID 2017, 2017-08
  • 31 B. Choi, J. Yoon, D. M. Kim, D. H. Kim, and S.-J. Choi "High-performance top-gated 99% semiconducting carbon nanotube network transistor with high device yield and uniformity" NANO KOREA, 2017-07
  • 32 J. Yoon, J. Han, B. Choi, D. M. Kim, D. H. Kim, and S.-J. Choi "Carbon nanotube transistor on 3-D printed polyvinyl alcohol (PVA) substrate for transient electronics" NANO KOREA, 2017-07
  • 33 Y. Lee, J. Yoon, B. Choi, H. Lee, D. M. Kim, D. H. Kim, and S.-J. Choi "High-performance, ink-jet printed 99% semiconducting carbon nanotube transistors with enhanced contact interfaces" NANO KOREA, 2017-07
  • 34 D. H. Kim, S. Choi, J. Jang, H. Kang, D. M. Kim, S.-J. Choi, Y.-S. Kim, S. Oh, J. H. Baeck, J. U. Bae, K.-S. Park, S. Y. Yoon, and In B. Kang "Experimental Decomposition of the Positive Bias Temperature Stressinduced Instability in Self-aligned Coplanar InGaZnO Thin-film Transistors and its Modeling based on the Multiple Stretched-exponentia" Society of Information Display, 2017-05
  • 35 H. R. Yu, J. T. Jang, S. Choi, H. Kang, D. Ko, J-.Y. Kim, G. Ahn, J. Lee, S.-J Choi, D. M. Kim, and D. H. Kim* "Influence of active layer thickness on the abnormal output characteristics in amorphous In-Ga-Zn-O TFTs under high current-flowing operation" The 24th Korean Conference on Semiconductors, 2017-02
  • 36 J. Rhee, S. Choi, H. Kang, J.-Y. Kim, J. T. Jang, D. Ko, S.-J. Choi, D. M. Kim, and D. H. Kim* "TCAD-based analysis on the relationship between the physical parameters in charge trapping and the stretched exponential model parameters in amorphous InGaZnO TFTs under the positive gate bias tempera" The 24th Korean Conference on Semiconductors, 2017-02
  • 37 S. Choi, J. T. Jang, H. Kang, J.-Y. Kim, D. Ko, J. Rhee, H. R. Yu, J. Park, S.-J. Choi, D. M. Kim, and D. H. Kim* "TCAD-based comparative study on the positive bias stress instability between the single-gate and double-gate structured In-Ga-Zn-O TFTs" The 24th Korean Conference on Semiconductors, 2017-02
  • 38 H. Jung, S. Choi, J. T. Jang, B. Choi, J. Yoon, J. Lee, Y. Lee, D. M. Kim, S.-J. Choi, and D. H. Kim* "Universal bias stress-induced instability model in the inkjet-printed carbon nanotube network FETs" The 24th Korean Conference on Semiconductors, 2017-02
  • 39 S. Kim, J. T. Jang, S. Choi, J. Jang, J. Kim, H.-S. Mo, D. M. Kim, S.-J. Choi, and D. H. Kim* "Influence of oxygen-content on the characteristics in amorphous InGaZnO TFT-based Temperature Sensors" The 24th Korean Conference on Semiconductors, 2017-02
  • 40 J.-Y. Kim, S. Choi, H. Kang, J. T. Jang, D. Ko, J. Rhee, Y. H. Ri, S.-J. Choi, D. M. Kim, and D. H. Kim* "Influence of the oxygen flow rate during sputter deposition on the current stress instability in bottom-gate amorphous InGaZnO Thin-Film Transistors" The 24th Korean Conference on Semiconductors, 2017-02
  • 41 D. Ko, J. T. Jang, S. Choi, H. Kang, J. Kim, H. R. Yu, G. Ahn, J. Lee, S.-J. Choi, D. M. Kim, and D. H. Kim* "Comparative study on the structural dependence of the sensitivity InGaZnO photosensors" The 24th Korean Conference on Semiconductors, 2017-02
  • 42 G. Ahn, J. T. Jang, D. Ko, H. Yu, S.-J. Choi, D. M. Kim, and D. H. Kim* "The influence of oxygen-content on the synaptic behavior of InGaZnO memristors for neuromorphic applications" The 24th Korean Conference on Semiconductors , 2017-02
  • 43 H. Lee, J. Kim, J. Kim, S. K. Kim, S.-J. Choi, D. H. Kim and D. M. Kim* "Characterization of Photo-Responsive Mechanism through Subgap Density-of-States in a-IGZO TFTs for Possible Infrared Light Detection" The 24th Korean Conference on Semiconductors, 2017-02
  • 44 J. Jang, J. Kim, H.-S. Mo, J. Park, B.-G. Park, S.-J. Choi, D. M. Kim, and D. H. Kim* "Experimental analysis on the setup/hold time in readout condition of Si nanowire FET-based biosensors for detecting ion and/or biomolecule in analyte solution" The 24th Korean Conference on Semiconductors, 2017-02
  • 45 S. K. Kim, J.-P. Shim, D.-M. Geum, C. Z. Kim, H.-S. Kim, Y.-S. Kim, H.-K. Kang, J.-D. Song, S.-J. Choi, D. H. Kim, W. J. Choi, H.-j. Kim, D. M. Kim* and S. H. Kim* "Fabrication of In-Rich(>0.53) InGaAs-OI on Si by Novel Epitaxial Lift-Off" The 24th Korean Conference on Semiconductors, 2017-02
  • 46 J. Kim, H. Lee, H. Bae, O. Seok, S.-J. Choi, D. H. Kim, and D. M. Kim "Characterization of Heterojunction Interface Traps in AlGaN/GaN HEMTs through Sub-Bandgap Photonic Response and Subthreshold Ideality Factor" The 24th Korean Conference on Semiconductors, 2017-02
  • 47 S. K. Kim, J.-P. Shim, D.-M. Geum, C. Z. Kim, H.-S. Kim, Y-S Kim, H.-K. Kang, J.-D. Song, S.-J. Choi, D. H. Kim, W. J. Choi, H.-J Kim, D. M. Kim* and S.-H. Kim* "High-performance In0.53Ga0.47As-OI MOSFET on Si substrates" The 24th Korean Conference on Semiconductors, 2017-02
  • 48 D. Lee, B.-H. Lee, J. Yoon, B. Choi, J.-Y. Park, D.-C. Ahn, C.-K. Kim, B.-W. Hwang, S.-B. Jeon, H. J. Ahn, M.-L. Seol, M.-H. Kang, B. J. Cho, S.-J. Choi*, Y.-K. Choi* (*co-corresponding authors) "First Demonstration of a Wrap-Gated CNT-FET with Vertically-Suspended Channels" IEEE International Electron Device Meeting (IEDM), 2016-09
  • 49 S. K. Kim, J. Shim, D.-M. Geum, C. Z. Kim, H.-S. Kim, Y.-S. Kim, H.-K. Kang, J. D. Song, S.-J. Choi, D. H. Kim, W. J. Choi, H.-J Kim, D. M. Kim*, S. H. Kim1* (*co-corresponding authors) "Cost-effective Fabrication of In0.53Ga0.47As-on-Insulator on Si for Monolithic 3D via Novel Epitaxial Lift-Off (ELO) and Donor Wafer Re-use" IEEE International Electron Device Meeting (IEDM), 2016-09
  • 50 M. Lim, J. Lee, D. H. Kim, D. M. Kim, S. Kim, S.-J. Choi "Comparative Study of Piezoresistance Effect of Semiconducting Carbon Nanotube-Polydimethylsiloxane Nanocomposite Strain Sensor" 16th International Conference on Nanotechnology, 2016-08
  • 51 H. Kang, J. T. Jang, S. Choi, J.-Y. Kim, D. Ko, S.-J. Choi, D. M. Kim, D. H. Kim "Wavelength-dependence of Persistent Photoconductivity in Zinc Oxynitride Thin-Film-Transistors" IMID 2016 DIGEST, 2016-08
  • 52 S. Choi, J. Kim, J. Kim, J. T. Jang, H. Kang, J.-Y. Kim, D. Ko, D. M. Kim, S.-J. Choi, J. C. Park, D. H. Kim "Temperature-dependency of the Donor Creation under Positive Gate and Drain Bias Stress in Self-Aligned Top-Gate a-InZnO TFTs" IMID 2016 DIGEST, 2016-08
  • 53 D. W. Kwon, S. Kim, R. Lee, D. H. Kim, B.-G. Park "Circuit Modeling of Ion Sensitive Field Effect Transistors with Current Drift" The 16th International Meeting on Chemical Sensors (IMCS), 2016-07
  • 54 R. Lee, D. W. Kwon, S. Kim, D. H. Kim, B.-G. Park "Nanowire size dependency of silicon nanowire field-effect transistor based pH sensor" The 16th International Meeting on Chemical Sensors (IMCS), 2016-07
  • 55 S. Kim, D. W. Kwon, R. Lee, D. H. Kim, B.-G. Park "Analysis of Dissimilarities in Current Drift on n-channel and p-channel pH-sensitive SiNW ISFET" The 16th International Meeting on Chemical Sensors (IMCS), 2016-07
  • 56 R. Lee, D. W. Kwon, S. Kim, D. H. Kim, B.-G. Park "New type of ISFET with separated sensing region form gate-controlled region" NANO KOREA, 2016-07
  • 57 S. Kim, D. W. Kwon, R. Lee, D. H. Kim, B.-G. Park "Simulation study on ONO gate stacked biosensor-CMOS hybrid system" NANO KOREA, 2016-07
  • 58 B. Choi, S. H. Jang, J. Yoon, J. Lee, M. Jeon, Y. Lee, J. Han, J. Lee, D. M. Kim, D. H. Kim, C. Lim, S. Park, S.-J. Choi "Comprehensive evaluation of early retention (fast charge loss within a few seconds) characteristics in tube-type 3-D NAND Flash Memory" Symposium on VLSI Technology Digest of Technical Papers (VLSI), 2016-06
  • 59 D. Ko, J. T. Jang, Y.-J. Baek, S.-J. Choi, D. M. Kim, C. J. Kang, T.-S. Yoon, H.-S. Mo, D. H. Kim "Effects of ambient and photo-illumination on electrical characteristics in the γ-Fe2O3 nanoparticle assembly-based memristors" The 23rd Korean Conference on Semiconductors(KCS 2016), p. 237, 2016-02
  • 60 H. Kang, J. T. Jang, S. Choi, S.-J. Choi, D. M. Kim, D. H. Kim "Analysis on the Degradation Mechanism under Positive/Negative Gate Bias Stress in Zinc Oxynitride Thin-Film Transistors" The 23rd Korean Conference on Semiconductors(KCS 2016), p. 70, 2016-02
  • 61 J. Jang, J. Kim, H.-S. Mo, J. H. Lee, B.-G. Park, S.-J. Choi, D. M. Kim, D. H. Kim, J. Park "Analysis and modeling on the pH-dependent current drift of Si nanowire ion-sensitive field effect transistor (ISFET)-based biosensors" The 23rd Korean Conference on Semiconductors(KCS 2016), p. 154, 2016-02
  • 62 J. Lee, B. Choi, J. Yoon, M. Jeon, Y. Lee, J. Han, J. Lee, D. M. Kim, D. H. Kim, S.-J. Choi "Ink-jet printed ambipolar transistors and inverters based on semiconducting carbon nanotubes with chemical doping technique" The 23rd Korean Conference on Semiconductors(KCS 2016), p. 54, 2016-02
  • 63 J. Han, B. Choi, J. Yoon, J. Lee, M. Jeon, Y. Lee, J. Lee, D. M. Kim, D. H. Kim, S.-J. Choi "A capacitorless 1T-DRAM cell on independent double-gate FinFET" The 23rd Korean Conference on Semiconductors(KCS 2016), p. 238, 2016-02
  • 64 J. T. Jang, S.-J. Choi, D. M. Kim, D. H. Kim "Calculation Method for Negative Bias Illumination Stress-induced Instability in Amorphous IGZO Thin-Film Transistors" The 23rd Korean Conference on Semiconductors(KCS 2016), p. 41, 2016-02
  • 65 M. Jeon, J. Yoon, J. Lee, B. Choi, J. Han, Y. Lee, J. Lee, D. M. Kim, D. H. Kim, S.-J. Choi "Hydrogen gas sensor based on carbon nanotube transistors with palladium source/drain electrodes using the pulse measurement" The 23th Korean Conference on Semiconductors(KCS 2016), p. 15, 2016-02
  • 66 S. Kim, J. Kim, H.-S. Mo, J. H. Lee, D. M. Kim, S.-J. Choi, B.-G. Park, D. H. Kim, J. Park "Sampling time and pH-dependences of SiNW ISFET-based biosensors" The 23rd Korean Conference on Semiconductors(KCS 2016), p. 14, 2016-02
  • 67 S. K. Kim, D.-M. Geum, J. Lee, M.-S. Park, J.-P. Shim, C. Z. Kim, H.-J. Kim, J.-D. Song, W. J. Choi, S.-J. Choi, D. H. Kim, S. H. Kim, D. M. Kim "The fabrication of InGaAs MOSFET with Y2O3 gate insulator" The 23rd Korean Conference on Semiconductors(KCS 2016), p. 270, 2016-02
  • 68 Y. Lee, J. Yoon, B. Choi, J. Lee, M. Jeon, J. Han, J. Lee D. M. Kim, D. H. Kim, and S.-J. Choi "Hybrid complementary inverter for solution-processed single-walled carbon nanotube and a-IGZO thin-film transistors" The 23rd Korean Conference on Semiconductors(KCS 2016), p. 215, 2016-02
  • 69 J.-Y. Kim, S. Choi, H. Kang, J. Kim, S.-J. Choi, D. M. Kim. D. H. Kim "Compartmentalization of the Physical Origin on the VT Variation of IGZO TFT under Current Stress by Combining I-V Curve and TCAD" The 23rd Korean Conference on Semiconductors(KCS 2016), p. 43, 2016-02
  • 70 J. Park, K. M. Lee, D. M. Kim, S.-J. Choi, D. H. Kim "The density-of-states based C-V extraction in amorphous In-Ga-Zn-O thin-film transistors and the 3D TCAD-based verification" 2015년도 정기총회 및 추계학술대회, 2015-11
  • 71 R. Lee, D. W. Kwon, S. Kim, D. H. Kim, B.-G. Park "Investigation of Sensor Performance in Tunneling Field Effect Transistor (TFET) as Highly Sensitive and Multi-Sensing Biosensors" 28th International Microprocesses and Nanotechnology Conference (MNC), 2015-11
  • 72 S. Kim, D. W. Kwon, R. Lee, D. H. Kim, B.-G. Park "Investigation of drift effect on silicon nanowire field effect transistor based pH sensor" 28th International Microprocesses and Nanotechnology Conference (MNC), 2015-11
  • 73 S. Kim, J. H. Lee, D. M. Kim, S. -J. Choi, B. -G. Park, D. H. Kim, and H. -S. Mo "CURRENT-MIRROR TYPE SILICON NANOWIRE BIOSENSOR WITH PROGRAMMABLE CURRENT REFERENCE" 19th International Conference on Miniaturized Systems for Chemistry and Life Sciences (MicroTAS 2015), 2015-10
  • 74 J. Kim, H. M. Choi, H.-S. Mo, J. H. Lee, D. M. Kim, S.-J. Choi, B.-G. Park, D. H. Kim, and J. Park "ANALYSIS OF HYSTERESIS AND DYNAMIC TRANSFER CHARACTERISTICS BY TIME DEPENDENCE IN SINW BIOSENSOR" 19th International Conference on Miniaturized Systems for Chemistry and Life Sciences (MicroTAS 2015), 2015-10
  • 75 S. Choi, J. Kim, J. Kim, J. T. Jang, H. Kang, D. M. Kim, S.-J. Choi, J. C. Park, D. H. Kim "Positive Bias Stress in Flowing Drain Current-induced Degradations in Self-Aligned Top-Gate a-IZO TFTs" IMID 2015 DIGEST, 2015-08
  • 76 J. Kim, J. T. Jang, S. Choi, J. Kim, H. Kang, S.-J. Choi, D. M. Kim, D. H. Kim "Analysis of hump characteristics induced self-heating and charge trapping in bottom-gate etch-stopper a-IGZO TFTs after simultaneous positive gate and drain bias stress" IMID 2015 DIGEST, 2015-08
  • 77 H. Kang, J. T. Jang, S.-J. Choi, D. M. Kim, D. H. Kim "Investigation of PBS-induced instability under various stress condition in a-IGZO TFT" 대한전자공학회 하계학술대회, 2015-06
  • 78 J. Kim, J. Kim, S. Choi, D. M. Kim, S.-J. Choi, D. H. Kim "The Analysis of Instability for Oxygen Flow Rate in Positive Bias Stress on High Gate Voltage or High Drain Voltage in a-IGZO Bottom-gate TFT" 대한전자공학회 하계학술대회, 2015-06
  • 79 S. Choi, Y. Kang, J. Kim, S.-J. Choi, D. M. Kim, H.-Y. Cha, H. Kim, D. H. Kim "Frequency-dependent C-V Based Extraction of Interface Trap Density in Normally-off Gate-recessed AlGaN/GaN Field-effect Transistors" ICEIC 2015, 2015-02
  • 80 J. T. Jang, H. Kang, J.H. Kim, S.-J. Choi, D. M. Kim, D. H. Kim "Analysis on the low VGS/high VDS stress-induced instability in amorphous indium-gallium-zinc-oxide thin-film transistors" ICEIC 2015, 2015-02
  • 81 H. Kang, J. T. Jang, J. Kim, S.-J. Choi, D. M. Kim, and D. H. Kim "Comparative analysis on positive bias stress-induced instability under HVGS and HVDS in amorphous InGaZnO thin-film transistors" The 22nd Korean Conference on Semiconductors(KCS 2015), p. 337, 2015-02
  • 82 S. Choi, Y. Kang, J. Kim, J. Kim, S.-J. Choi, D. M. Kim, H.-Y. Cha, H. Kim., and D. H. Kim "Extraction of Interface Trap Density by using frequency dispersion of C-V in Normally-off Gate-recessed AlGaN/GaN HFETs" The 22nd Korean Conference on Semiconductors(KCS 2015), p. 28, 2015-02
  • 83 J. Lee, S. Choi, J. Ahn, J. S. Hwang, S. K. Kim, S.-J. Choi, D. H. Kim and D. M. Kim "Hump characteristics generated by bias stress in a-IGZO TFTs" The 22nd Korean Conference on Semiconductors(KCS 2015), p. 275, 2015-02
  • 84 J. Kim, S. Choi, J. Jang, J. T. Jang, J. Kim, S.-J. Choi, D. M. Kim, and D. H. Kim "Analysis of instability mechanism under simultaneous positive gate and drain bias stress in self-aligned top-gate amorphous indium-zinc-oxide thin-film transistors" The 22nd Korean Conference on Semiconductors(KCS 2015), p. 334, 2015-02
  • 85 J. Lee, B. Choi, J. Yoon, M. Jeon, J. Jang, D. M. Kim, D. H. Kim, and S.-J. Choi "Analysis of structural dependences on the electrical performance of vertical organic field-effect transistor (VOFET)" The 22nd Korean Conference on Semiconductors(KCS 2015), p. 67, 2015-02
  • 86 H. M. Choi, J. Park, D. J. Shin, B. Choi, S. Kim, H. Mo, D. M. Kim, S.-J. Choi, D. H. Kim "Biosensing comparison between dry and wet environment in silicon nanowire transistor" The 22nd Korean Conference on Semiconductors(KCS 2015), 2015-02
  • 87 J. Choi, Y. Kang, S. Choi, D. H. Kim, H.-Y. Cha, and H. Kim "Extraction of Interface Trap Density Through Differential Subthreshold Ideality Factor Technique in Normally-off AlGaN/GaN MOSHFETs" 제4회 한국광전자학회(The 4th Conference on Korea Society of Optoelectronics), Nov., 2014-11
  • 88 D. H. Kim, J. Jang, K. M. Lee, S. -J. Choi, and D. M. Kim "Subgap Density-of-States (DOS)-based Simulation for Instability-Aware Design of Oxide TFTs" CAD-TFT 2014, 2014-10
  • 89 K. M. Lee, J. T. Jang, J. Jang, S.-J. Choi, D. M. Kim, and D. H. Kim "Negative Bias Illumination Stress Time-Evolution of Subgap States in Amorphous InGaZnO Thin-Film Transistors: Oxygen Vacancy?" IMID 2014 DIGEST, p. 11, 2014-08
  • 90 D. H. Kim, J. Jang, K. M. Lee, S.-J. Choi, and D. M. Kim " Toward instability-aware design of oxide TFTs(Invited)" IMID 2014 DIGEST, p. 198, 2014-08
  • 91 J. Jang, S.-J. Choi, D. M. Kim, J.-H. Lim, J.-H. Lee, B. D. Ahn, and D. H. Kim "Negative Bias Illumination Stress-Induced Instability in Amorphous Indium-Tin- Zinc-Oxide TFTs and Its Comparison with Indium-Gallium-Zinc-Oxide TFTs" IMID 2014 DIGEST, p. 199, 2014-08
  • 92 J. T. Jang, K. M. Lee, J. Jang, S.-J. Choi, D. M. Kim, and D. H. Kim "The Effect of RF Sputtering Power on Negative Bias Illumination Stress-Induced Instability in Sputtered Amorphous InGaZnO Thin-Film Transistors" IMID 2014 DIGEST, p. 358, 2014-08
  • 93 S. Choi, J. Jang, H. Kim, D. G. Kim, K. M. Lee, J. H. Kim, D. M. Kim, S.-J. Choi, J. C. Park, and D. H. Kim "VGS/VDS Configuration-Dependence of Positive Bias Stress-Induced Instability in Self-Aligned Top-Gate IZO TFTs" IMID 2014 DIGEST,p. 359, 2014-08
  • 94 J. Yoon, D. Lee, C. Kim, J. Lee, B. Choi, N. Yoder, J. Humes, D. H. Kim, D. M. Kim, M. Lee, Y.-K. Choi, and S.-J. Choi "Highly separated semiconducting carbon nanotube (99.9%) thin-film transistor using printing technology" IMID 2014 DIGEST, p. 568, 2014-08
  • 95 J.-W. Park, H. Kim, D. H. Kim, and M. Lee "Study of the improvements in the electrical performance of solution-processed metal oxide thin-film transistors using self-assembled monolayers" SPIE Optics & Photonics 2014, 2014-08
  • 96 Y. Kang, J.-G. Lee, S. Choi, D. H. Kim, H.-Y. Cha, and H. Kim "Extraction of Interface Trap Density Through Differential Subthreshold Ideality Factor Technique in Normally-off AlGaN/GaN MOSHFETs" Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices(AWAD), Poster, 2014-07
  • 97 J. Lee, J. Jang, H. Kim, C. Jo, S. Jun, K. M. Lee, D. J. Shin, J. Jang, S. Choi, S.-J. Choi, D. M. Kim, and D. H. Kim "The Effect of Passivation on the Positive Bias Stress-Induced Instability of Polymer Thin-Film Transistors" The 21st Korean Conference on Semiconductors(KCS 2014), p. 296, 2014-02
  • 98 C. Jo, H. Kim, S. Jun, D. J. Shin, K. M. Lee, J. Jang, J. Lee, J. Jang, S. Choi, S.-J. Choi, D. M. Kim, and D. H. Kim "Study on Physical Mechanism on the Positive Bias Stress-Induced Degradation ofAmorphous InGaZnO Thin-Film Transistors with Density-of-States BasedCharacterization" The 21st Korean Conference on Semiconductors(KCS 2014), p. 96, 2014-02
  • 99 K. M. Lee, S. Jun, H. Kim, C. Jo, J. Jang, J. Lee, D. J. Shin, J. T. Jang, S. Choi, S.-J. Choi, D. M. Kim, and D. H. Kim "Oxygen vacancy-dependent density-of-states and its effect on the negative bias illumination stress-induced degradation in amorphous oxide semiconductor thin-film transistors" The 21st Korean Conference on Semiconductors(KCS 2014), p. 54, 2014-02
  • 100 J. T. Jang, K. M. Lee, H. Kim, J. Jang, D. J. Shin, S. Choi, J. Lee, C. Jo, S. Jun, S.-J. Choi, D. M. Kim, and D. H. Kim "Effect of the RF power in sputter system on performance and photoelectric degradation of amorphous indium-gallium-zinc-oxide thin-film transistors" The 21st Korean Conference on Semiconductors(KCS 2014), p. 56, 2014-02

Patent

  • 1 THIN FILM TRANSISTOR DISPLAY PANEL
    Patent
    : Byung Du aHN Ji Hun KIM Jun Hyung LIM Dae Hwan KIM Jae Hyeong KIM Je Hun LEE Hyun Kwang JUNG
    Applicant
    : 삼성디스플레이
    Application
    /Resistration
    : 등록
    Application
    /Patent Number
    : US008969872B2 (US 8,969,872 B2)
    Filing
    /Issue Date
    : 2015-03-03
    Nation of the
    Application
    : 미국
  • 2 커패시턴스-전압 특성을 이용한 저온 다결정 실리콘 박막 트랜지스터의 수직 방향 결정립 경계 위치를 추적하는 방법 및 그 장치 및 방법
    Patent
    : 김동명 안제엽 황준석 이정민
    Applicant
    : 국민대학교 산학협력단
    Application
    /Resistration
    : 출원
    Application
    /Patent Number
    : 10-2014-0188932
    Filing
    /Issue Date
    : 2014-12-24
    Nation of the
    Application
    : 대한민국
  • 3 게이트-드레인 및 게이트-소스의 커패시턴스-전압 특성을 이용한 저온 다결정 실리콘 박막트랜지스터의 결정립 경계위치를 추적하는 장치 및 방법
    Patent
    : 김동명 김대환 안제엽 배학열 최현준 황준석
    Applicant
    : 국민대학교 산학협력단
    Application
    /Resistration
    : 출원
    Application
    /Patent Number
    : 10-2014-0066080
    Filing
    /Issue Date
    : 2014-05-30
    Nation of the
    Application
    : 대한민국
  • 4 THIN FILM TRANSISTOR ARRAY PANEL AND METHOD OF MANUFACTURING THE SAME
    Patent
    : Byung Du aHN Jung Hwa KIM Ji Hun LEE Dae Hwan KIM Hyun Kwang JUNG
    Applicant
    : 국민대학교 산학협력단 & 삼성디스플레이
    Application
    /Resistration
    : 출원
    Application
    /Patent Number
    : US 2014/0084293 A1
    Filing
    /Issue Date
    : 2014-03-27
    Nation of the
    Application
    : 미국
  • 5 비정질 산화물 박막 트랜지스터로 구성된 회로의 전파지연시간과 연관이 되는 이동도 모델링 방법 및 그 장치
    Patent
    : 김대환 김동명 이경민
    Applicant
    : 국민대학교 산학협력단
    Application
    /Resistration
    : 등록
    Application
    /Patent Number
    : 10-2014-0009660
    Filing
    /Issue Date
    : 2015-06-09
    Nation of the
    Application
    : 대한민국
  • 6 실리콘 나노와이어 상보형 금속산화물 반도체 하이브리드 전류 증폭기 기반의 바이오센서 및 바이오물질 감지 방법
    Patent
    : 김대환 김동명 이지은
    Applicant
    : 국민대학교 산학협력단
    Application
    /Resistration
    : 출원
    Application
    /Patent Number
    : 10-2014-0008467
    Filing
    /Issue Date
    : 2014-01-23
    Nation of the
    Application
    : 대한민국
  • 7 디지털화 신호처리부가 집적된 바이오 센서 및 감지 방법
    Patent
    : 김대환 김동명 이지은
    Applicant
    : 국민대학교 산학협력단
    Application
    /Resistration
    : 출원
    Application
    /Patent Number
    : 10-2014-0001460
    Filing
    /Issue Date
    : 2014-01-06
    Nation of the
    Application
    : 대한민국
  • 8 디지털화 기법을 이용한 바이오물질 감지시스템 및 감지장치
    Patent
    : 김대환 김동명 이지은
    Applicant
    : 국민대학교 산학협력단
    Application
    /Resistration
    : 출원
    Application
    /Patent Number
    : 10-2014-0001468
    Filing
    /Issue Date
    : 2014-01-06
    Nation of the
    Application
    : 대한민국
  • 9 광 응답 특성을 이용한 유기 박막 트랜지스터의 과잉 캐리어 수명 추출 방법 및 그 장치
    Patent
    : 김대환 김동명 이재욱 장재만
    Applicant
    : 국민대학교 산학협력단
    Application
    /Resistration
    : 등록
    Application
    /Patent Number
    : 10-1483716
    Filing
    /Issue Date
    : 2015-01-12
    Nation of the
    Application
    : 대한민국
  • 10 THIN FILM TRANSISTOR AND DISPLAY APPARATUS HAVING THE SAME
    Patent
    : Jihun Lim Byung Du Ahn Gun Hee Kim Junhyun Park Jehun Lee Jaewoo Park Dae Hwan Kim Hyunkwang Jung Jaehyeong Kim
    Applicant
    : 국민대학교 산학협력단 & 삼성디스플레이
    Application
    /Resistration
    : 출원
    Application
    /Patent Number
    : US 2013/0271687 A1
    Filing
    /Issue Date
    : 2013-10-17
    Nation of the
    Application
    : 미국
  • 11 커플링 계수를 이용한 비정질 반도체 박막 트랜지스터의 표면 전위와 밴드갭 내 상태밀도 추출 방법, 및 그 장치
    Patent
    : 김대환, 김동명, 전성우
    Applicant
    : 국민대학교, 산학협력단
    Application
    /Resistration
    : 등록
    Application
    /Patent Number
    : 10-1427714
    Filing
    /Issue Date
    : 2014-08-01
    Nation of the
    Application
    : 대한민국
  • 12 채널 전도 계수를 이용한 비정질 산화물 반도체 박막 트랜지스터의 진성 밴드갭 내 상태밀도 추출 방법 및 그장치
    Patent
    : 김동명, 김대환, 최현준, 배학열, 황준석, 안제엽
    Applicant
    : 국민대학교, 산학협력단
    Application
    /Resistration
    : 등록
    Application
    /Patent Number
    : 10-1427713
    Filing
    /Issue Date
    : 2014-08-01
    Nation of the
    Application
    : 대한민국
  • 13 실리콘 나노와이어 바이오센서
    Patent
    : 정인영, 김대환
    Applicant
    : 광운대학교 산학단
    Application
    /Resistration
    : 등록
    Application
    /Patent Number
    : 10-2013-1259355
    Filing
    /Issue Date
    : 2013-04-24
    Nation of the
    Application
    : 대한민국
  • 14 비정질 산화물 반도체 박막 트랜지스터의 전류 모델링 방법 및 그 장치
    Patent
    : 배민경,김용식,김동명,김대환
    Applicant
    : 국민대학교산학협력단
    Application
    /Resistration
    : 등록
    Application
    /Patent Number
    : 10-2013-1267780
    Filing
    /Issue Date
    : 2013-05-21
    Nation of the
    Application
    : 대한민국
  • 15 광 미분 바디 팩터를 이용한 금속 산화물 반도체 전계 효과트랜지스터의 밴드갭 내 상태밀도 추출 방법 및 그 장치
    Patent
    : 홍의연,배학열,김대환,김동명
    Applicant
    : 국민대학교산학협력단
    Application
    /Resistration
    : 등록
    Application
    /Patent Number
    : 10-1375784
    Filing
    /Issue Date
    : 2014-03-12
    Nation of the
    Application
    : 대한민국
  • 16 광 미분 이상계수를 이용한 비정질 산화물 반도체 박막 트랜지스터의 밴드갭 내 상태밀도 추출 방법 및 그 장치
    Patent
    : 황준석,안제엽,서효준,배학열,김대환,김동명
    Applicant
    : 국민대학교산학협력단
    Application
    /Resistration
    : 등록
    Application
    /Patent Number
    : 10-1368972
    Filing
    /Issue Date
    : 2014-02-24
    Nation of the
    Application
    : 대한민국
  • 17 복수의 주파수에 대한 커패시턴스-전압 특성을 이용한 비정질 산화물 반도체 박막 트랜지스터의 밴드갭 내 상태밀도 추출 방법 및 그 장치
    Patent
    : 전성우,배학열,홍의연,김대환,김동명
    Applicant
    : 국민대학교산학협력단
    Application
    /Resistration
    : 등록
    Application
    /Patent Number
    : 10-1375787
    Filing
    /Issue Date
    : 2014-03-12
    Nation of the
    Application
    : 대한민국
  • 18 비정질 산화물 반도체 박막 트랜지스터의 밴드갭 내 상태밀도 추출 방법 및 그 장치
    Patent
    : 배학열 ,최현준 ,김대환 ,김동명
    Applicant
    : 국민대학교 산학협력단
    Application
    /Resistration
    : 출원
    Application
    /Patent Number
    : 10-2013-0027999
    Filing
    /Issue Date
    : 2013-03-15
    Nation of the
    Application
    : 대한민국
  • 19 비정질 산화물 반도체 박막 트랜지스터의 밴드갭 내 상태밀도 추출 방법 및 그 장치
    Patent
    : 배민경,배학열,김대환,김동명
    Applicant
    : 국민대학교산학협력단
    Application
    /Resistration
    : 등록
    Application
    /Patent Number
    : 10-1378112
    Filing
    /Issue Date
    : 2014-02-19
    Nation of the
    Application
    : 대한민국
  • 20 비정질 산화물 반도체 박막 트랜지스터의 진성 밴드갭 내 상태밀도 추출 방법 및 그 장치
    Patent
    : 최현준 ,배학열 ,김대환 ,김동명
    Applicant
    : 국민대학교 산학협력단
    Application
    /Resistration
    : 출원
    Application
    /Patent Number
    : 10-2013-0027986
    Filing
    /Issue Date
    : 2013-03-15
    Nation of the
    Application
    : 대한민국
  • 21 박막 트랜지스터 표시판
    Patent
    : 김대환 ,김재형 ,정현광 ,안병두 ,임지훈 ,임준형 ,이제훈
    Applicant
    : 국민대학교 산학협력단
    Application
    /Resistration
    : 출원
    Application
    /Patent Number
    : 10-2012-0115045
    Filing
    /Issue Date
    : 2012-10-16
    Nation of the
    Application
    : 대한민국
  • 22 박막 트랜지스터 표시판 및 그 제조 방법
    Patent
    : 김대환 ,정현광 ,안병두 ,김정화 ,임지훈 ,이제훈
    Applicant
    : 국민대학교 산학협력단
    Application
    /Resistration
    : 출원
    Application
    /Patent Number
    : 10-2012-0105381
    Filing
    /Issue Date
    : 2012-09-21
    Nation of the
    Application
    : 대한민국
  • 23 바이오 센서의 캘리브레이션 장치 및 방법
    Patent
    : 김대환 ,정인영
    Applicant
    : 국민대학교 산학협력단
    Application
    /Resistration
    : 등록
    Application
    /Patent Number
    : 10-1156504
    Filing
    /Issue Date
    : 2012-06-08
    Nation of the
    Application
    : 대한민국
  • 24 바이오 칩 및 이를 이용한 생화학적 분석 시스템
    Patent
    : 김대환 ,정인영
    Applicant
    : 국민대학교 산학협력단
    Application
    /Resistration
    : 등록
    Application
    /Patent Number
    : 10-1131942
    Filing
    /Issue Date
    : 2012-03-23
    Nation of the
    Application
    : 대한민국
  • 25 비정질 박막 트랜지스터의 기생 직렬 저항 성분 추출 방법
    Patent
    : 배학열 ,허인석 ,김동명 ,김대환
    Applicant
    : 국민대학교 산학협력단
    Application
    /Resistration
    : 등록
    Application
    /Patent Number
    : 10-1126981
    Filing
    /Issue Date
    : 2012-03-08
    Nation of the
    Application
    : 대한민국
  • 26 박막 트랜지스터 및 그 제조 방법
    Patent
    : 김동명 ,김대환 ,정현광 ,김재형
    Applicant
    : 국민대학교 산학협력단
    Application
    /Resistration
    : 출원
    Application
    /Patent Number
    : 10-2012-0023682
    Filing
    /Issue Date
    : 2012-03-08
    Nation of the
    Application
    : 대한민국
  • 27 새로운 실리콘/실리콘게르마늄 이종 접합을 갖는 이중 에이치비티 기반의 커패시터가 없는 디램 셀
    Patent
    : 신자선 ,김동명 ,김대환
    Applicant
    : 국민대학교 산학협력단
    Application
    /Resistration
    : 등록
    Application
    /Patent Number
    : 10-1113990
    Filing
    /Issue Date
    : 2012-02-01
    Nation of the
    Application
    : 대한민국
  • 28 비정질 산화물 반도체 박막 트랜지스터의 전류 모델링 방법 및 그 장치
    Patent
    : 배민경 ,김용식 ,김동명 ,김대환
    Applicant
    : 국민대학교 산학협력단
    Application
    /Resistration
    : 등록
    Application
    /Patent Number
    : 10-1105273
    Filing
    /Issue Date
    : 2012-01-05
    Nation of the
    Application
    : 대한민국
  • 29 캐패시터가 없는 에스비이 디램 셀 트랜지스터 구조
    Patent
    : 김동명 ,김대환 ,이순영 ,장재만 ,김효종 ,신자선
    Applicant
    : 국민대학교 산학협력단
    Application
    /Resistration
    : 등록
    Application
    /Patent Number
    : 10-1102671
    Filing
    /Issue Date
    : 2011-12-29
    Nation of the
    Application
    : 대한민국
  • 30 새로운 실리콘/실리콘게르마늄 이종 접합을 갖는 이중 에이치비티 기반의 커패시터가 없는 디램 셀
    Patent
    : 신자선 ,김동명 ,김대환
    Applicant
    : 국민대학교 산학협력단
    Application
    /Resistration
    : 출원
    Application
    /Patent Number
    : 10-2011-0110834
    Filing
    /Issue Date
    : 2011-10-27
    Nation of the
    Application
    : 대한민국
  • 31 차등적 농도로 도핑된 활성층을 가진 비정질 반도체 박막 트랜지스터 및 그 제조방법
    Patent
    : 김재형 ,정현광 ,김동명 ,김대환
    Applicant
    : 국민대학교 산학협력단
    Application
    /Resistration
    : 출원
    Application
    /Patent Number
    : 10-2011-0110835
    Filing
    /Issue Date
    : 2011-10-27
    Nation of the
    Application
    : 대한민국
  • 32 비정질 박막 트랜지스터의 기생 직렬 저항 성분 추출 방법
    Patent
    : 배학열 ,허인석 ,김동명 ,김대환
    Applicant
    : 국민대학교 산학협력단
    Application
    /Resistration
    : 출원 (우선심사)
    Application
    /Patent Number
    : 10-2011-0077904
    Filing
    /Issue Date
    : 2011-08-04
    Nation of the
    Application
    : 대한민국
  • 33 비정질 산화물 반도체 박막 트랜지스터의 전류 모델링 방법 및 그 장치
    Patent
    : 배민경 ,김용식 ,김동명 ,김대환
    Applicant
    : 국민대학교 산학협력단
    Application
    /Resistration
    : 출원 (우선심사)
    Application
    /Patent Number
    : 10-2011-0070958
    Filing
    /Issue Date
    : 2011-07-18
    Nation of the
    Application
    : 대한민국
  • 34 비정질 산화물 반도체 박막 트랜지스터의 커패시턴스 모델링 방법 및 그 장치
    Patent
    : 배민경 ,김용식 ,김동명 ,김대환
    Applicant
    : 국민대학교 산학협력단
    Application
    /Resistration
    : 출원 (우선심사)
    Application
    /Patent Number
    : 10-2011-0071009
    Filing
    /Issue Date
    : 2011-07-18
    Nation of the
    Application
    : 대한민국
  • 35 캐패시터가 없는 에스비이 디램 셀 트랜지스터의 제조 방법
    Patent
    : 김동명 ,김대환 ,이순영 ,장재만 ,김효종 ,신자선
    Applicant
    : 국민대학교 산학협력단
    Application
    /Resistration
    : 등록
    Application
    /Patent Number
    : 10-1049298
    Filing
    /Issue Date
    : 2011-07-08
    Nation of the
    Application
    : 대한민국
  • 36 박막 트랜지스터의 파라메터 산출방법 및 이를 수행하는 산출장치
    Patent
    : 이제훈 ,안병두 ,박세용 ,박준현 ,박재우 ,김대환 ,김성철 ,전용우
    Applicant
    : 삼성전자(주)
    Application
    /Resistration
    : 출원
    Application
    /Patent Number
    : 10-2011-0058546
    Filing
    /Issue Date
    : 2011-06-16
    Nation of the
    Application
    : 대한민국
  • 37 바이오 센서의 캘리브레이션 장치 및 방법
    Patent
    : 김대환 ,정인영
    Applicant
    : 국민대학교 산학협력단
    Application
    /Resistration
    : 출원
    Application
    /Patent Number
    : 10-2011-0039902
    Filing
    /Issue Date
    : 2011-04-28
    Nation of the
    Application
    : 대한민국
  • 38 비정질 반도체 박막 트랜지스터(TFT)의 전기적 특성을 산출하는 방법 및 장치 (MFM)
    Patent
    : 박재철 ,김대환 ,김창정
    Applicant
    : 국민대학교 산학협력단
    Application
    /Resistration
    : 출원
    Application
    /Patent Number
    : 10-2010-0083707
    Filing
    /Issue Date
    : 2010-08-27
    Nation of the
    Application
    : 대한민국
  • 39 바이오 칩 및 이를 이용한 생화학적 분석 시스템
    Patent
    : 김대환 ,정인영
    Applicant
    : 국민대학교 산학협력단
    Application
    /Resistration
    : 출원
    Application
    /Patent Number
    : 10-2010-0059606
    Filing
    /Issue Date
    : 2010-06-23
    Nation of the
    Application
    : 대한민국
  • 40 캐패시터가 없는 에스비이 디램 셀 트랜지스터의 제조 방법
    Patent
    : 김동명 ,김대환 ,이순영 ,장재만 ,김효종 ,신자선
    Applicant
    : 국민대학교 산학협력단
    Application
    /Resistration
    : 출원
    Application
    /Patent Number
    : 10-2010-0045684
    Filing
    /Issue Date
    : 2010-05-14
    Nation of the
    Application
    : 대한민국
  • 41 캐패시터가 없는 에스비이 디램 셀 트랜지스터 구조
    Patent
    : 김동명 ,김대환 ,이순영 ,장재만 ,김효종 ,신자선
    Applicant
    : 국민대학교 산학협력단
    Application
    /Resistration
    : 출원
    Application
    /Patent Number
    : 10-2010-0045681
    Filing
    /Issue Date
    : 2010-05-14
    Nation of the
    Application
    : 대한민국
  • 42 실리콘 나노와이어 바이오센서
    Patent
    : 김대환 ,정인영
    Applicant
    : 국민대학교 산학협력단
    Application
    /Resistration
    : 출원
    Application
    /Patent Number
    : 10-2010-0044401
    Filing
    /Issue Date
    : 2010-05-12
    Nation of the
    Application
    : 대한민국
  • 43 다중 비트 저장이 가능한 비휘발성 메모리 셀 제조 방법 및 이를 이용한 노어 타입 메모리 아키텍쳐
    Patent
    : 김동명 ,김대환 ,이순영
    Applicant
    : 국민대학교 산학협력단
    Application
    /Resistration
    : 등록
    Application
    /Patent Number
    : 10-0956798
    Filing
    /Issue Date
    : 2010-04-30
    Nation of the
    Application
    : 대한민국
  • 44 다중비트 저장이 가능한 비휘발성 메모리 셀 및 이의 구동 방법
    Patent
    : 김동명 ,김대환 ,이순영
    Applicant
    : 국민대학교 산학협력단
    Application
    /Resistration
    : 등록
    Application
    /Patent Number
    : 10-0942240
    Filing
    /Issue Date
    : 2010-02-05
    Nation of the
    Application
    : 대한민국
  • 45 다중 비트 저장이 가능한 비휘발성 메모리 셀 제조 방법 및 이를 이용한 노어 타입 메모리 아키텍처
    Patent
    : 김동명 ,김대환 ,이순영
    Applicant
    : 국민대학교 산학협력단
    Application
    /Resistration
    : 출원
    Application
    /Patent Number
    : 10-2009-0064187
    Filing
    /Issue Date
    : 2009-07-14
    Nation of the
    Application
    : 대한민국
  • 46 다중비트 저장이 가능한 비휘발성 메모리 셀 및 이의 구동 방법
    Patent
    : 김동명 ,김대환 ,이순영
    Applicant
    : 국민대학교 산학협력단
    Application
    /Resistration
    : 출원
    Application
    /Patent Number
    : 10-2009-0064183
    Filing
    /Issue Date
    : 2009-07-14
    Nation of the
    Application
    : 대한민국
  • 47 비정질 반도체 TFT의 전기적 특성을 산출하는 방법 및 장치 (OCPM)
    Patent
    : 박재철 ,김대환 ,허지현 ,김창정
    Applicant
    : 삼성전자(주)
    Application
    /Resistration
    : 출원
    Application
    /Patent Number
    : 10-2009-0053494
    Filing
    /Issue Date
    : 2009-06-16
    Nation of the
    Application
    : 대한민국
  • 48 On-chip Bypass Capacitor and Method of Manufacturing the Same
    Patent
    : 공동발명자
    Applicant
    : 삼성전자(주)
    Application
    /Resistration
    : 등록
    Application
    /Patent Number
    : US 0063134
    Filing
    /Issue Date
    : 2007-02-13
    Nation of the
    Application
    : 미국
  • 49 내부 전압 발생 회로
    Patent
    : 공동발명자
    Applicant
    : 삼성전자(주)
    Application
    /Resistration
    : 등록
    Application
    /Patent Number
    : 10-629258
    Filing
    /Issue Date
    : 2006-09-21
    Nation of the
    Application
    : 대한민국
  • 50 차아지 펌핑 효율을 유지하는 승압 전압 발생 회로
    Patent
    : 공동발명자
    Applicant
    : 삼성전자(주)
    Application
    /Resistration
    : 등록
    Application
    /Patent Number
    : 10-585144
    Filing
    /Issue Date
    : 2006-05-24
    Nation of the
    Application
    : 대한민국
  • 51 온칩 바이패스 캐패시터 및 그 제조방법
    Patent
    : 공동발명자
    Applicant
    : 삼성전자(주)
    Application
    /Resistration
    : 등록
    Application
    /Patent Number
    : 10-568450
    Filing
    /Issue Date
    : 01/04/2006
    Nation of the
    Application
    : 대한민국
  • 52 Method for Fabricating Single Electron Transistor
    Patent
    : 공동발명자
    Applicant
    : 현대전자(주)
    Application
    /Resistration
    : 등록
    Application
    /Patent Number
    : US 6335245
    Filing
    /Issue Date
    : 02/01/2002
    Nation of the
    Application
    : 미국
  • 53 Method for Fabricating Single Electron Transistor
    Patent
    : 공동발명자
    Applicant
    : 현대전자(주)
    Application
    /Resistration
    : 등록
    Application
    /Patent Number
    : US 6211013
    Filing
    /Issue Date
    : 04/04/2002
    Nation of the
    Application
    : 미국
  Patent Title Applicant Application
/Resistration		 Application
/Patent Number		 Filing
/Issue Date		 Nation of the
Application
1 Byung Du aHN Ji Hun KIM Jun Hyung LIM Dae Hwan KIM Jae Hyeong KIM Je Hun LEE Hyun Kwang JUNG THIN FILM TRANSISTOR DISPLAY PANEL 삼성디스플레이 등록 US008969872B2 (US 8,969,872 B2) 2015-03-03 미국
2 김동명 안제엽 황준석 이정민 커패시턴스-전압 특성을 이용한 저온 다결정 실리콘 박막 트랜지스터의 수직 방향 결정립 경계 위치를 추적하는 방법 및 그 장치 및 방법 국민대학교 산학협력단 출원 10-2014-0188932 2014-12-24 대한민국
3 김동명 김대환 안제엽 배학열 최현준 황준석 게이트-드레인 및 게이트-소스의 커패시턴스-전압 특성을 이용한 저온 다결정 실리콘 박막트랜지스터의 결정립 경계위치를 추적하는 장치 및 방법 국민대학교 산학협력단 출원 10-2014-0066080 2014-05-30 대한민국
4 Byung Du aHN Jung Hwa KIM Ji Hun LEE Dae Hwan KIM Hyun Kwang JUNG THIN FILM TRANSISTOR ARRAY PANEL AND METHOD OF MANUFACTURING THE SAME 국민대학교 산학협력단 & 삼성디스플레이 출원 US 2014/0084293 A1 2014-03-27 미국
5 김대환 김동명 이경민 비정질 산화물 박막 트랜지스터로 구성된 회로의 전파지연시간과 연관이 되는 이동도 모델링 방법 및 그 장치 국민대학교 산학협력단 등록 10-2014-0009660 2015-06-09 대한민국
6 김대환 김동명 이지은 실리콘 나노와이어 상보형 금속산화물 반도체 하이브리드 전류 증폭기 기반의 바이오센서 및 바이오물질 감지 방법 국민대학교 산학협력단 출원 10-2014-0008467 2014-01-23 대한민국
7 김대환 김동명 이지은 디지털화 신호처리부가 집적된 바이오 센서 및 감지 방법 국민대학교 산학협력단 출원 10-2014-0001460 2014-01-06 대한민국
8 김대환 김동명 이지은 디지털화 기법을 이용한 바이오물질 감지시스템 및 감지장치 국민대학교 산학협력단 출원 10-2014-0001468 2014-01-06 대한민국
9 김대환 김동명 이재욱 장재만 광 응답 특성을 이용한 유기 박막 트랜지스터의 과잉 캐리어 수명 추출 방법 및 그 장치 국민대학교 산학협력단 등록 10-1483716 2015-01-12 대한민국
10 Jihun Lim Byung Du Ahn Gun Hee Kim Junhyun Park Jehun Lee Jaewoo Park Dae Hwan Kim Hyunkwang Jung Jaehyeong Kim THIN FILM TRANSISTOR AND DISPLAY APPARATUS HAVING THE SAME 국민대학교 산학협력단 & 삼성디스플레이 출원 US 2013/0271687 A1 2013-10-17 미국
11 김대환, 김동명, 전성우 커플링 계수를 이용한 비정질 반도체 박막 트랜지스터의 표면 전위와 밴드갭 내 상태밀도 추출 방법, 및 그 장치 국민대학교, 산학협력단 등록 10-1427714 2014-08-01 대한민국
12 김동명, 김대환, 최현준, 배학열, 황준석, 안제엽 채널 전도 계수를 이용한 비정질 산화물 반도체 박막 트랜지스터의 진성 밴드갭 내 상태밀도 추출 방법 및 그장치 국민대학교, 산학협력단 등록 10-1427713 2014-08-01 대한민국
13 정인영, 김대환 실리콘 나노와이어 바이오센서 광운대학교 산학단 등록 10-2013-1259355 2013-04-24 대한민국
14 배민경,김용식,김동명,김대환 비정질 산화물 반도체 박막 트랜지스터의 전류 모델링 방법 및 그 장치 국민대학교산학협력단 등록 10-2013-1267780 2013-05-21 대한민국
15 홍의연,배학열,김대환,김동명 광 미분 바디 팩터를 이용한 금속 산화물 반도체 전계 효과트랜지스터의 밴드갭 내 상태밀도 추출 방법 및 그 장치 국민대학교산학협력단 등록 10-1375784 2014-03-12 대한민국
16 황준석,안제엽,서효준,배학열,김대환,김동명 광 미분 이상계수를 이용한 비정질 산화물 반도체 박막 트랜지스터의 밴드갭 내 상태밀도 추출 방법 및 그 장치 국민대학교산학협력단 등록 10-1368972 2014-02-24 대한민국
17 전성우,배학열,홍의연,김대환,김동명 복수의 주파수에 대한 커패시턴스-전압 특성을 이용한 비정질 산화물 반도체 박막 트랜지스터의 밴드갭 내 상태밀도 추출 방법 및 그 장치 국민대학교산학협력단 등록 10-1375787 2014-03-12 대한민국
18 배학열 ,최현준 ,김대환 ,김동명 비정질 산화물 반도체 박막 트랜지스터의 밴드갭 내 상태밀도 추출 방법 및 그 장치 국민대학교 산학협력단 출원 10-2013-0027999 2013-03-15 대한민국
19 배민경,배학열,김대환,김동명 비정질 산화물 반도체 박막 트랜지스터의 밴드갭 내 상태밀도 추출 방법 및 그 장치 국민대학교산학협력단 등록 10-1378112 2014-02-19 대한민국
20 최현준 ,배학열 ,김대환 ,김동명 비정질 산화물 반도체 박막 트랜지스터의 진성 밴드갭 내 상태밀도 추출 방법 및 그 장치 국민대학교 산학협력단 출원 10-2013-0027986 2013-03-15 대한민국
21 김대환 ,김재형 ,정현광 ,안병두 ,임지훈 ,임준형 ,이제훈 박막 트랜지스터 표시판 국민대학교 산학협력단 출원 10-2012-0115045 2012-10-16 대한민국
22 김대환 ,정현광 ,안병두 ,김정화 ,임지훈 ,이제훈 박막 트랜지스터 표시판 및 그 제조 방법 국민대학교 산학협력단 출원 10-2012-0105381 2012-09-21 대한민국
23 김대환 ,정인영 바이오 센서의 캘리브레이션 장치 및 방법 국민대학교 산학협력단 등록 10-1156504 2012-06-08 대한민국
24 김대환 ,정인영 바이오 칩 및 이를 이용한 생화학적 분석 시스템 국민대학교 산학협력단 등록 10-1131942 2012-03-23 대한민국
25 배학열 ,허인석 ,김동명 ,김대환 비정질 박막 트랜지스터의 기생 직렬 저항 성분 추출 방법 국민대학교 산학협력단 등록 10-1126981 2012-03-08 대한민국
26 김동명 ,김대환 ,정현광 ,김재형 박막 트랜지스터 및 그 제조 방법 국민대학교 산학협력단 출원 10-2012-0023682 2012-03-08 대한민국
27 신자선 ,김동명 ,김대환 새로운 실리콘/실리콘게르마늄 이종 접합을 갖는 이중 에이치비티 기반의 커패시터가 없는 디램 셀 국민대학교 산학협력단 등록 10-1113990 2012-02-01 대한민국
28 배민경 ,김용식 ,김동명 ,김대환 비정질 산화물 반도체 박막 트랜지스터의 전류 모델링 방법 및 그 장치 국민대학교 산학협력단 등록 10-1105273 2012-01-05 대한민국
29 김동명 ,김대환 ,이순영 ,장재만 ,김효종 ,신자선 캐패시터가 없는 에스비이 디램 셀 트랜지스터 구조 국민대학교 산학협력단 등록 10-1102671 2011-12-29 대한민국
30 신자선 ,김동명 ,김대환 새로운 실리콘/실리콘게르마늄 이종 접합을 갖는 이중 에이치비티 기반의 커패시터가 없는 디램 셀 국민대학교 산학협력단 출원 10-2011-0110834 2011-10-27 대한민국
31 김재형 ,정현광 ,김동명 ,김대환 차등적 농도로 도핑된 활성층을 가진 비정질 반도체 박막 트랜지스터 및 그 제조방법 국민대학교 산학협력단 출원 10-2011-0110835 2011-10-27 대한민국
32 배학열 ,허인석 ,김동명 ,김대환 비정질 박막 트랜지스터의 기생 직렬 저항 성분 추출 방법 국민대학교 산학협력단 출원 (우선심사) 10-2011-0077904 2011-08-04 대한민국
33 배민경 ,김용식 ,김동명 ,김대환 비정질 산화물 반도체 박막 트랜지스터의 전류 모델링 방법 및 그 장치 국민대학교 산학협력단 출원 (우선심사) 10-2011-0070958 2011-07-18 대한민국
34 배민경 ,김용식 ,김동명 ,김대환 비정질 산화물 반도체 박막 트랜지스터의 커패시턴스 모델링 방법 및 그 장치 국민대학교 산학협력단 출원 (우선심사) 10-2011-0071009 2011-07-18 대한민국
35 김동명 ,김대환 ,이순영 ,장재만 ,김효종 ,신자선 캐패시터가 없는 에스비이 디램 셀 트랜지스터의 제조 방법 국민대학교 산학협력단 등록 10-1049298 2011-07-08 대한민국
36 이제훈 ,안병두 ,박세용 ,박준현 ,박재우 ,김대환 ,김성철 ,전용우 박막 트랜지스터의 파라메터 산출방법 및 이를 수행하는 산출장치 삼성전자(주) 출원 10-2011-0058546 2011-06-16 대한민국
37 김대환 ,정인영 바이오 센서의 캘리브레이션 장치 및 방법 국민대학교 산학협력단 출원 10-2011-0039902 2011-04-28 대한민국
38 박재철 ,김대환 ,김창정 비정질 반도체 박막 트랜지스터(TFT)의 전기적 특성을 산출하는 방법 및 장치 (MFM) 국민대학교 산학협력단 출원 10-2010-0083707 2010-08-27 대한민국
39 김대환 ,정인영 바이오 칩 및 이를 이용한 생화학적 분석 시스템 국민대학교 산학협력단 출원 10-2010-0059606 2010-06-23 대한민국
40 김동명 ,김대환 ,이순영 ,장재만 ,김효종 ,신자선 캐패시터가 없는 에스비이 디램 셀 트랜지스터의 제조 방법 국민대학교 산학협력단 출원 10-2010-0045684 2010-05-14 대한민국
41 김동명 ,김대환 ,이순영 ,장재만 ,김효종 ,신자선 캐패시터가 없는 에스비이 디램 셀 트랜지스터 구조 국민대학교 산학협력단 출원 10-2010-0045681 2010-05-14 대한민국
42 김대환 ,정인영 실리콘 나노와이어 바이오센서 국민대학교 산학협력단 출원 10-2010-0044401 2010-05-12 대한민국
43 김동명 ,김대환 ,이순영 다중 비트 저장이 가능한 비휘발성 메모리 셀 제조 방법 및 이를 이용한 노어 타입 메모리 아키텍쳐 국민대학교 산학협력단 등록 10-0956798 2010-04-30 대한민국
44 김동명 ,김대환 ,이순영 다중비트 저장이 가능한 비휘발성 메모리 셀 및 이의 구동 방법 국민대학교 산학협력단 등록 10-0942240 2010-02-05 대한민국
45 김동명 ,김대환 ,이순영 다중 비트 저장이 가능한 비휘발성 메모리 셀 제조 방법 및 이를 이용한 노어 타입 메모리 아키텍처 국민대학교 산학협력단 출원 10-2009-0064187 2009-07-14 대한민국
46 김동명 ,김대환 ,이순영 다중비트 저장이 가능한 비휘발성 메모리 셀 및 이의 구동 방법 국민대학교 산학협력단 출원 10-2009-0064183 2009-07-14 대한민국
47 박재철 ,김대환 ,허지현 ,김창정 비정질 반도체 TFT의 전기적 특성을 산출하는 방법 및 장치 (OCPM) 삼성전자(주) 출원 10-2009-0053494 2009-06-16 대한민국
48 공동발명자 On-chip Bypass Capacitor and Method of Manufacturing the Same 삼성전자(주) 등록 US 0063134 2007-02-13 미국
49 공동발명자 내부 전압 발생 회로 삼성전자(주) 등록 10-629258 2006-09-21 대한민국
50 공동발명자 차아지 펌핑 효율을 유지하는 승압 전압 발생 회로 삼성전자(주) 등록 10-585144 2006-05-24 대한민국
51 공동발명자 온칩 바이패스 캐패시터 및 그 제조방법 삼성전자(주) 등록 10-568450 01/04/2006 대한민국
52 공동발명자 Method for Fabricating Single Electron Transistor 현대전자(주) 등록 US 6335245 02/01/2002 미국
53 공동발명자 Method for Fabricating Single Electron Transistor 현대전자(주) 등록 US 6211013 04/04/2002 미국

Award

  • 1 [미래소자] 제3회 KSRC AWARD 수상 (2019) "제 19-02호" -이용우
  • 2 제 26 회 반도체 학술대회(2019) - 우수 논문상 수상 "SPICE-Based Simulation Study of Cu/AlOX/Pt Conductive-Bridge Resistive Access Memory-CMOS Integrated Circuit for Reconfigurable Logic" -J. T. Jang, G. Ahn, D. Ko, H. R. Yu, H. Jung, C. Yoon, S. Lee, B. H. Park, H.-S. Mo, S.-J. Choi, D. M. Kim, and D. H. Kim
  • 3 [미래소자] 제2회 KSRC AWARD 수상 (2018) "제 18-11호" -최봉식
  • 4 IMiD 2017 Outstanding Poster Paper Award "Relationship between the tunneling distance and stretched-exponential function model on the positive bias stress-induced charge trapping in IGZO TFTs" -J. Rhee, S. Choi, J.-Y. Kim, S.-J. Choi, D. M. Kim,and D. H. Kim*
  • 5 NANO KOREA (2017) - Best Poster Award "High-performance, ink-jet printed 99% semiconducting carbon nanotube transistors with enhanced contact interfaces" -Y. Lee, J. Yoon, B. Choi, H. Lee, D. M. Kim, D. H. Kim, S.-J. Choi
  • 6 Society of Information Display (SID) 2017 - Distinguish paper 수상 "Experimental decomposition of the positive bias temperature stress-induced instability in self-aligned coplanar InGaZnO thin-film transistors and its modeling based on the multiple stretched-exponenti" -김대환
  • 7 제 24 회 반도체 학술대회(2017) - 우수 논문상 수상 "Calculation Method for Negative Bias Illumination Stress-induced Instability in Amorphous IGZO Thin-Film Transistors" -J. T. Jang, S.-J. Choi, D. M. Kim, D. H. Kim
  • 8 2016년 LG연구개발상 산학협동상 수상 "" -김대환
  • 9 제 23 회 반도체 학술대회(2016) - 우수포스터 논문 수상 "Analysis and modeling on the pH-dependent current drift of Si nanowire ion-sensitive field effect transistor (ISFET)-based biosensors" -J. Jang, J. Kim, H.-S. Mo, J. H. Lee, B.-G. Park, S.-J. Choi, D. M. Kim, D. H. Kim, J. Park
  • 10 우수인재상 "제 2016-022호" -장준태
  • 11 우수인재상 "제 2016-021호" -이정민
  • 12 우수인재상 "제 2016-020호" -윤진수
  • 13 iMiD 2015 Outstanding Poster Paper Award "Positive Bias Stress in Flowing Drain Current-Induced Degradations in Self-Aligned Top-Gate a-IZO TFTs" -S. Choi, J. Kim, J. Kim, J. T. Jang, H. Kang, D. M. Kim, S.-J. Choi, J. C. Park, and D. H. Kim
  • 14 우수인재상 "제2014-629호" -장재만
  • 15 iMiD 2014 Outstanding Poster Paper Award "VGS/VDS Configuration-Dependence of Positive Bias Stress-Induced Instability in Self-Aligned Top-Gate IZO TFTs" -S. Choi, J. Jang, H. Kim, D. G. Kim, K. M. Lee, J. H. Kim, D. M. Kim, S.-J. Choi, J. C. Park, and D. H. Kim
  • 16 우수인재상 "제2014-062호" -이지은
  • 17 우수인재상 "제2013-228호" -전성우
  • 18 IEDM 2013 - Highlithted in IEDM "A Novel SiNW/CMOS Hybrid Biosensor for High Sensitivity/Low Noise " -J. Lee, S. Hwang, B. Choi, J. H. Lee, B.-G. Park, D.-I. Moon, M.-L. Seol, C.-H. Kim, Y.-K. Choi, D. M. Kim, D. H. Kim, S.-J. Choi
  • 19 제 20회 반도체 학술대회(2013) - 동부하이텍상 수상 "Analytical Current Model for Polymer-based Thin Film Transistors Considering the Field-Dependent Mobility and Nonlinearity in the Linear Region" -J. Kim, J. Jang, J. Lee, W. Kim, I. Hur, C. Jo, S. Jun, H. Kim, K. M. Lee, D. J. Shin, D. M. Kim, and D. H. Kim
  • 20 SID 2013 Digest of Technical Papers - Distinguished Poster Paper 선정 "Separate Extraction Technique of Intrinsic Donor- and Acceptor-like Density-of-States over Full-Energy Range Sub-bandgap in Amorphous Oxide Semiconductor Thin Film Transistors by Using One-Shot Monoch" -H. Bae, S. Jun, H. Choi, C. H. Jo Y. H. Kim, J. S. Hwang, J. Ahn, D. H. Kim, and D. M. Kim
  • 21 제 18 회 삼성전자 휴먼테크 논문대상(2012) - 은상 수상 "Top-Down Si Nanowire-CMOS Hybrid Bio-Signal Digitizer for Low-Cost Mobile Diagnosis Platfroms" -이지은, 이정한, 이진무, 장혜리, 이원희, 김동명*, 김대환*
  • 22 제 18 회 반도체 학술대회(2012) - 우수포스터 논문 수상 "The Effect of the Active Layer Thickness on the Negatiive Bias Illumination Stress-Induced Instability in Amorphous InGaZnO Thin-Film Transistors" -공동식, 정현광, 배민경, 김용식, 김성철, 전용우, 김재형, 김우준, 허인석, 장재만, 이지은, 이장식, 김동명*,김대환*
  • 23 제 17 회 삼성전자 휴먼테크 논문대상(2011) - 은상 수상 "Complete Extraction of the Subgap Density-of-States over the Full Energy Range in Amorphous Oxide Semiconductor Thin-Film Transistors and Application to the Instability Analysis" -김용식, 김성철, 배민경, 공동식, 김동명*, 김대환*
  • 24 제 17 회 반도체 학술대회 기업체상- 하이닉스상 수상 "Accurate Extraction of Gate Capacitances in Leaky MOS Systems using Modified 3-element circuit Model Combining the Multi-Frequency Capacitance-Voltage Method" -백성진, 박성욱, 배학열, 장재만, 이지은, 이순영, 장혜리, 김효종, 윤대연, 신자선, 김대환*, 김동명*
  • 25 제 16 회 삼성전자 휴먼테크 논문대상(2011) - 장려상 수상 "A Novel Superlattice Band-gap Engineered Capacitorless DRAM Cell with Extremely Short Channel Length Down to 30 nm" -이순영, 장재만, 신자선, 김효종 김대환*, 김동명*
  • 26 제 15 회 삼성전자 휴먼테크 논문대상(2010) - 동상 수상 "A Novel Self-Aligned 4-Bit SONOS-Type Nonvolatile Memory Cell With T-Gate and I-Shaped FinFET (TGIF) Structure" -전용우, 이순영, 전기찬, 이지은, 김대환*, 김동명*
  • 27 제 14 회 삼성전자 휴먼테크 논문대상(2009) - 동상 수상 "Lateral Trapped-Charge Profiling Based on the Extraction of the Flat Band Voltage by using the Optical Substrate Current in Nitride-Based Charge-Trap Flash Mompries" -노강섭, 박성욱, 송관재, 강구철, 김동명*, 김대환*
  • 28 제 13 회 삼성전자 휴먼테크 논문대상(2008) - 장려상 수상 "Complementary SET/CMOS 하이브리드 증폭기를 이용한 ADC설계" -최창민, 이충현, 박준현, 이장욱 , 김동명*, 김대환*
  • 29 제 12 회 삼성전자 휴먼테크 논문대상(2007) - 동상 수상 "Sub-Bandgap Optical GIDL 전류를 이용한 MOSFET의 Gate-Drain Overlap 영역에서의 계면상태 특성분석" -서승환, 김관영, 노강섭, 이충현 , 김대환*, 김동명*
  • 30 제 4 회 삼성전자 휴먼테크 논문대상(1996) - 동상 수상 "Optoelectronic Control and Modeling of the High Performance Field Effect Transistor as a Photonic Microwave Detector" -임광만, 김동명*
  • 31 제 1 회 삼성전자 휴먼테크 논문대상(1993) - 동상 수상 "이종접합 바이폴라 트랜지스터의 초고주파 성능개선을 위한 콜렉터 구조에 관한 연구" -송상호, 김동명*

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