7J. Lee, J. Yoon, B. Choi, D. Lee, D. M. Kim, D. H. Kim, Y.-K. Choi, S.-J. Choi"Ink-jet printed semiconducting carbon nanotube ambipolar transistors and inverters with chemical doping technique using polyethyleneimine"Applied Physics Letters, vol. 109, no. 26, p. 263103, DOI: 10.1063/1.4973360, 2016-12
6J. Kim§, H. Lee§, S. K. Kim, J. Kim, J. Park, S.-J. Choi, D. H. Kim, D. M. Kim ( §These authors equally contributed to this work)"Hybrid Open Drain Method and Fully Current- Based Characterization of Asymmetric Resistance Components in a Single MOSFET"IEEE Transactions on Electron Devices, Vol. 63, no. 11, pp. 4196-4200, DOI: 10.1109/TED.2016.2607721, 2016-09
5J. Yoon§, J. Lee§, B. Choi§, D. Lee, D. H. Kim, D. M. Kim, D.-I. Moon, M. Lim, S. Kim, S.-J. Choi ( §These authors equally contributed to this work)"Flammable carbon nanotube transistors on a nitrocellulose paper substrate for transient electronics"Nano research, DOI: 10.1007/s12274-016-1268-6, 2016-09
4K. M. Lee, J. T. Jang, Y.-J. Baek, H. Kang, S. Choi, S.-J. Choi, D. M. Kim, C. J. Kang, T.-S. Yoon, H.-S. Mo, D. H. Kim"The γ -Fe2O3 Nanoparticle Assembly-Based Memristor Ratioed Logic and Its Optical Tuning"IEEE Electron Device Letters, Vol. 37, no. 8, pp. 986-989, DOI: 10.1109/LED.2016.2582523 , 2016-08
3H. M. Choi, D. J. Shin, J. H. Lee, H.-S. Mo, T. J. Park, B.-G. Park, D. M. Kim, S.-J. Choi, D. H. Kim, J. Park"The Analysis of Characteristics in Dry and Wet Environments of Silicon Nanowire-Biosensor"Journal of Nanoscience and Nanotechnology, vol. 16, no. 5, pp. 4901–4905, DOI: 10.1166/jnn.2016.12247, 2016-05
2J. Yoon, B. Choi, S. Choi, J. Lee, J. Lee, M. Jeon, Y Lee, J. Han, J. Lee, D. M. Kim, D. H. Kim, S. Kim, S.-J. Choi"Evaluation of interface trap densities and quantum capacitance in carbon nanotube network thin-film transistors"Nanotechnology, vol. 27, no. 29, p. 295704, DOI: 10.1088/0957-4484/27/29/295704, 2016-06
1S. K. Kim, J. Lee, D.-M. Geum, M.-S. Park, W. J. Choi, S.-J. Choi, D. H. Kim, S. Kim*, D. M. Kim* (*co-corresponding authors)"Fully Subthreshold Current-Based Characterization of Interface Traps and Surface Potential in III-V-on-Insulator MOSFETs"Solid-State Electronics, vol. 122, pp. 8-12, DOI: 10.1016/j.sse.2016.04.011, 2016-04