Prof. Kim`s R.P.

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  • 17 S. D. Cho, H. T. Kim, S. J. Song, S. S. Chi, M. S. Kim, W. S. Chang, H. J. Kang, H. T. Shin, T. E. Kim, D. J. Kim, and D. M. Kim "A Physics-Based Continuous Charge-Sheet MOSFET Model using a Balanced Bulk Charge Sharing Method" J. of the Korean Phys. Soc., vol. 42, no. 2, pp. 214-223, 2003-02
  • 16 S.-H. Seo, S.-W. Kim , J.-U. Lee, G.-C. Kang, K.-S. Roh, K.-Y. Kim , S.-Y. Lee, C.-M. Choi, K.-J. Song, S.-R. Park, J.-H. Park, K.-C. Jeon, D. M. Kim, D. H. Kim , H. Shin, J. D. Lee and B-G. Park "Channel width dependence of hot electron injection program/hot hole erase cycling behavior in silicon-oxide-nitride-oxide-silicon (SONOS) memories" Solid-State Electronics, vol. 52, issue 6, pp. 844-848, 2008-01
  • 15 S. J. Song, H. T. Kim, S. S. Chi, M. S. Kim, W. S. Chang, S. D. Cho, H. T. Shin, T. E. Kim, H. J. Kang, D. J. Kim, and D. M. Kim "Characterization of Interface States in MOS Systems using Photonic High-Frequency Capacitance-Voltage Responses" J. of the Korean Phys. Soc., vol. 41, no. 6, pp. 892-895, 2002-12
  • 14 S. D. Cho, S. J. Song, H. C. Kim, Y. C. Kim, S. K. Kim, S. S. Chi, D. J. Kim, and D. M. Kim "Comprehensive Characterization and Modeling of Abnormal Gate Leakage Current in Pseudomorphic HEMTs" J. of the Korean Phys. Soc., vol. 40, no. 4, pp. 577-583, 2002-04
  • 13 D. M. Kim, H. C. Kim, and H. T. Kim "Photonic High-Frequency Capacitance-Voltage Characterization of Interface States in Metal-Oxide-Semiconductor Capacitors" IEEE Trans. Electron Devices, vol. 49, no. 3, pp. 526-528, 2002-03
  • 12 H. C. Kim, H. T. Kim, S. D. Cho, S. J. Song, Y. C. Kim, S. K. Kim, S. S. Chi, D. J. Kim, and D. M. Kim "Photonic Characterization of Capacitance-Voltage Characteristics in MOS Capacitors and Current-Voltage Characteristics in MOSFETs" J. of the Korean Phys. Soc., vol. 40, no. 1, pp. 64-67, 2002-01
  • 11 Y. C. Kim, H. T. Kim, S. D. Cho, S. J. Song, H. C. Kim, S. K. Kim, S. S. Chi, K. H. Baek, G. M. Lim, D. J. Kim, and D. M. Kim "Extraction of Device Model Parameters in MOSFETs Combining C-V and I-V Characteristics" J. of the Korean Phys. Soc., vol. 40, no. 1, pp. 60-63, 2002-01
  • 10 K. H. Baek, G. M. Lim, S. D. Cho, Y. C. Kim, H. C. Kim, S. K. Kim, and D. M. Kim "Modeling of Submicron Si-MOSFET's for Microwave Applications with Unique Extraction of Small-Signal Characteristic Parameters" J. of the Korean Phys. Soc., vol. 36, no. 6, pp. 915-922, 2000-12
  • 9 G. M. Lim, Y. C. Kim, D. J. Kim, Y. W. Park, and D. M. Kim "Additional Resistance Method for Extraction of Separated Nonlinear Parasitic Resistances and Effective Mobility in MOSFETs" Electronics Lett., vol. 36, no. 14, pp. 1233-1234, 2000-07
  • 8 D. M. Kim, H. J. Kim, J. I. Lee, and Y. J. Lee "Comparison of Photoresponsive Drain Conduction and Gate Leakage in N-channel Pseudomorphic HEMT and MESFET under Electro-Optical Stimulations" IEEE Electron Device Lett., vol. 21, no. 6, pp. 264-267, 2000-06
  • 7 D. M. Kim, S. H. Song, K. H. Baek, D. J. Kim, and H. J. Kim "Microwave Characteristics of a Pseudomorphic High Electron Mobility Transistor under Electro-Optical Stimulations" IEEE Electron Device Lett., vol. 21, no. 3, pp. 93-96, 2000-03
  • 6 D. M. Kim, G.-M. Lim, and H. J. Kim "Parallel Conduction and Non-Linear Optoelectronic Response of an N-Channel Pseudomorphic High Electron Mobility Transistor" Solid-State Electronics, vol. 43, no. 5, pp. 943-951, 1999-01
  • 5 D. M. Kim, S. H. Song, H. J. Kim, and K. N. Kang "Electrical Characteristics of an Optically Controlled N-Channel AlGaAs/GaAs/InGaAs Pseudomorphic HEMT" IEEE Electron Device Lett., vol. 20, no. 2, pp. 73-76, 1999-02
  • 4 H. J. Kim, D. M. Kim, S. H. Kim, J. I. Lee, K. N. Kang, and K. Cho "Effects of Light on the InGaP/GaAs/ InGaAs P-Channel Double Heterojunction Pseudomorphic MODFET" Japan. J. of App. Phys., vol. 37, no.3b (part 2), pp. l322-l324, 1998-03
  • 3 J. Jo, Y. I. Choi, D. M. Kim, K. Alt, and K. L. Wang "Observation of Resonances by Individual Energy Levels in InGaAs/AlAs Triple Barrier Resonant Tunneling Diodes" Japan. J. of Appl. Phys., vol. 37, no. 3b (part 1), pp. 1654-1656, 1998-03
  • 2 H. J. Kim, D. M. Kim, D. H. Woo, S.-I. Kim, S. H. Kim, J. I. Lee, K. N. Kang, and K. Cho "High Photoresponsivity of a P-channel InGaP/GaAs/InGaAs Double Heterojunction Pseudomorphic Modulation-Doped Field Effect Transistor" Appl. Phys. Lett., vol. 72, no. 5, pp. 584-586, 1998-02
  • 1 S. H. Song, D. M. Kim, H. J. Kim, S. H. Kim, K. N. Kang, and M. I. Nathan "Photonic Microwave Characteristics and Modeling of an Al0.3Ga0.7As/GaAs/In0.13Ga0.87As Double Heterostructure Pseudomorphic HEMT" IEEE Microwave and Guided Wave Lett, vol. 8, no. 1, pp. 35-37, 1998-01
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