Prof. Kim`s R.P.

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  • 158 J. Jang†, S. Choi†, J. Kim, T. J. Park, B.-G. Park, D. M. Kim, S.-J. Choi, S. M. Lee, D. H. Kim, H.-S. Mo (†These authors equally contributed to this work) "Effect of liquid gate bias rising time in pH sensors based on Si nanowire ion sensitive field effect transistors" Solid State Electronics, vol. 140, pp. 109-114, DOI: 10.1016/j.sse.2017.10.027, 2018-02 PDF
  • 157 J. T. Jang, D. Ko, G. Ahn, H. R. Yu, H. Jung, Y. S. Kim, C. Yoon S. Lee, B. H. Park, S.-J. Choi, D. M. Kim, D. H. Kim "Effect of oxygen content of the LaAlO3 layer on the synaptic behavior of Pt/LaAlO3/Nb-doped SrTiO3 memristors for neuromorphic applications" Solid State Electronics, vol. 140, pp. 139-143, DOI: 10.1016/j.sse.2017.10.032, 2018-02 PDF
  • 156 J. T. Jang†, D. Ko†, S. Choi, H. Kang, J.-Y. Kim, H. R. Yu, G. Ahn, H. Jung, J. Rhee, S.-J. Choi, D. M. Kim, D. H. Kim(†These authors equally contributed to this work) "Effects of structure and oxygen flow rate on the photo-response of amorphous IGZO-based photodetector devices" Solid State Electronics, vol. 140, pp. 115-121, DOI: 10.1016/j.sse.2017.10.028, 2018-02 PDF
  • 155 H. Jung, S. choi, J. T. Jang, J. Yoon, J. Lee, Y. Lee, J. Rhee, G. Ahn, H. R. Yu, D. M. Kim, S.-J. Choi, D. H. Kim* "Universal model of bias-stress-induced instability in inkjet-printed carbon nanotube networks field-effect transistors" Solid State Electronics, https://doi.org/10.1016/j.sse.2017.10.022, 2017-10 PDF
  • 154 J. Rhee, S. Choi, H. Kang, J.-Y. Kim, D. Ko, G. Ahn, H. Jung, S.-J. Choi, D. M. Kim, D. H. Kim* "The electron trap parameter extraction-based investigation of the relationship between charge trapping and activation energy in IGZO TFTs under positive bias temperature stress" Solid State Electronics, http://dx.doi.org/10.1016/j.sse.2017.10.024, 2017-10 PDF
  • 153 Y. Lee, J. Yoon, B. Choi, H. Lee, J. Park, M. Jeon, J. Han, J. Lee, Y. Kim, D. H. Kim, D. M. Kim, and S.-J. Choi* "Semiconducting carbon nanotube network thin-film transistors with enhanced inkjet-printed source and drain contact interfaces" Applied physics Letters, vol. 111, no. 17, pp. 173108-173111, DOI: 10.1063/1.5009656, 2017-10 PDF
  • 152 S. K. Kim, J.-P. Shim, D.-M. Geum, C. Z. Kim, H.-S. Kim, J. D. Song, S.-J. Choi, D. H. Kim, W. J. Choi, H.-J. Kim, D. M. Kim, and S. Kim "Fabrication of InGaAs-on-insulator Substrates Using Direct Wafer Bonding and Epitaxial Lift-off Techniques" IEEE Transactions on Electron Devices, vol. 64, no. 9, pp. 3601–3608, DOI: 10.1109/TED.2017.2722482, 2017-09 PDF
  • 151 J. Lee†, M. Lim†, J. Yoon, M. S. Kim, B. Choi, D. M. Kim, D. H. Kim, I. Park, S.-J. Choi ( †These authors equally contributed to this work) "Transparent, flexible strain sensor based on a solution-processed carbon nanotube network" ACS Applied Materials & Interfaces, DOI: 10.1021/acsami.7b03184, 2017-07 PDF
  • 150 J. Yoon§, M. Lim§, B. Choi, D. M. Kim, D. H. Kim, S. Kim*, and S.-J. Choi* ( §These authors equally contributed to this work, *co-corresponding authors) "Determination of individual contact interfaces in carbon nanotube network-based transistors" Scientific Reports, Scientific reports 7, DOI: 10.1038/s41598-017-05653-x, 2017-07 PDF
  • 149 M. Jeon§, B. Choi§, J. Yoon, D. M. Kim, D. H. Kim, I. Park*, and S.-J. Choi* (§These authors equally contributed to this work, *co-corresponding authors) "Enhanced sensing of gas molecules by a 99.9% semiconducting carbon nanotube-based field-effect transistor sensor" Applied Physics Letters, Vol. 111, no. 2, p. 022102, DOI: 10.1063/1.4991970, 2017-07 PDF
  • 148 H. Lee§, J. Kim§, J. Kim, S. K. Kim, Y. Lee, J.-Y. Kim, J. T. Jang, J. Park, S.-J. Choi, D. H. Kim, and D. M. Kim( §These authors equally contributed to this work) "Investigation of Infrared Photo-Detection Through Subgap Density-of-States in a-InGaZnO Thin-Film Transistors" IEEE Electron Device Letters, VOL. 38, NO. 5, DOI: 10.1109/LED.2017.2686844, 2017-05 PDF
  • 147 S. Choi, J. Jang, H. Kang, J. H. Baeck, J. U. Bae, K.-S. Park, S. Y. Yoon, I. B. Kang, D. M. Kim, S.-J. Choi, Y.-S. Kim, S. Oh, and D. H. Kim "Systematic Decomposition of the Positive Bias Stress Instability in Self-Aligned Coplanar InGaZnO Thin-Film Transistors" IEEE Electron Device Letters, VOL. 38, NO. 5, DOI: 10.1109/LED.2017.2681204, 2017-05 PDF
  • 146 J. Jang, J. Kim, S. Kim, H.-S. Mo, D. M. Kim, S.-J. Choi, B.-G. Park, D. H. Kim, J. Park "Analysis and modeling on the pH-dependent current drift of Si nanowire ion-sensitive field effect transistor (ISFET)-based biosensors" Journal of Nanoscience and Nanotechnology, Vol. 17, NO. 5, pp. 3146–3150, DOI: 10.1166/jnn.2017.14037, 2017-05 PDF
  • 145 S. Kim, J. Kim, J. Jang, H.-S. Mo, D. M. Kim, S.-J. Choi, B.-G. Park, D. H. Kim, J. Park "Sampling time and pH-dependences of SiNW ISFET-based biosensors" Journal of Nanoscience and Nanotechnology, Vol. 17, NO. 5, pp. 3257-3260, DOI:10.1166/jnn.2017.14038, 2017-05 PDF
  • 144 D. H. Kim, S. Choi, J. Jang, H. Kang, D. M. Kim, S.-J. Choi, Y.-S. Kim, S. Oh, J. H. Baeck, J. U. Bae, K.-S. Park, S. Y. Yoon, and In B. Kang "Experimental decomposition of the positive bias temperature stress-induced instability in self-aligned coplanar InGaZnO thin-film transistors and its modeling based on the multiple stretched-exponenti" Journal of the SID(Society of Information Display), Vol. 25, No.2, pp.98-107, DOI : 10.1002/jsid.531, 2017-02 PDF
  • 143 H. Lee, J. Kim, S. Choi, S. K. Kim, J. Kim, J. Park, S.-J. Choi, D. H. Kim, D. M. Kim "Band-Bending Effect in the Characterization of Subgap Density-of-States in Amorphous TFTs Through Fully Electrical Techniques" IEEE Electron Device Letters, vol. 38, no. 2, DOI: 10.1109/LED.2016.2636301, 2017-02 PDF
  • 142 H. Lee, J. Kim, S. Choi, S. K. Kim, J. Kim, J. Park, S.-J. Choi, D. H. Kim, D. M. Kim "Band-Bending Effect in the Characterization of Subgap Density-of-States in Amorphous TFTs through Fully Electrical Techniques" IEEE Electron Device Letters, vol. 38, no. 2, DOI: 10.1109/LED.2016.2636301, 2017-02 PDF
  • 141 S. K. Kim, D.-M. Geum, J.-P. Shim, C. Z. Kim, H.-J. Kim, J. D. Song, W. J. Choi, S.-J. Choi, D. H. Kim, S. Kim, D. M. Kim "Fabrication and characterization of Pt/Al2O3/Y2O3/In0.53Ga0.47As MOSFETs with low interface trap density" Applied Physics Letters, vol. 110, no. 4, DOI: 10.1063/1.4974893, 2017-01 PDF
  • 140 J. Lee, J. Yoon, B. Choi, D. Lee, D. M. Kim, D. H. Kim, Y.-K. Choi, S.-J. Choi "Ink-jet printed semiconducting carbon nanotube ambipolar transistors and inverters with chemical doping technique using polyethyleneimine" Applied Physics Letters, vol. 109, no. 26, p. 263103, DOI: 10.1063/1.4973360, 2016-12 PDF
  • 139 J. Kim§, H. Lee§, S. K. Kim, J. Kim, J. Park, S.-J. Choi, D. H. Kim, D. M. Kim ( §These authors equally contributed to this work) "Hybrid Open Drain Method and Fully Current- Based Characterization of Asymmetric Resistance Components in a Single MOSFET" IEEE Transactions on Electron Devices, Vol. 63, no. 11, pp. 4196-4200, DOI: 10.1109/TED.2016.2607721, 2016-09 PDF