Prof. Kim`s R.P.

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  • 98 S. Jun, C. Jo, H. Bae, H. Choi, D. H. Kim, and D. M. Kim "Unified Subthreshold Coupling Factor Technique for Surface Potential and Subgap Density-of-States in Amorphous Thin Film Transistors" IEEE Electron Device Letters, vol. 34, no. 5, pp. 641-643, 2013-05 PDF
  • 97 C. Jo, S. Jun, W. Kim, I. Hur, H. Bae, S.-J. Choi, D. H. Kim, and D. M. Kim "Characterization of density-of-states and parasitic resistance in a-InGaZnO thin-film transistors after negative bias stress" Appl. Phys. Letters, vol. 102, issue. 5, p. 143502, 2013-04 PDF
  • 96 I. Hur, H. Bae, W. Kim, J. Kim, H. K. Jeong, C. Jo, S. Jun, J. Lee, Y. H. Kim, D. H. Kim, and D. M. Kim "Characterization of Intrinsic Field-Effect Mobility in TFTs by De-Embedding the Effect of Parasitic Source and Drain Resistances" IEEE Electron Device Letters, vol. 34, no. 2, pp. 250-252, 2013-02 PDF
  • 95 J. Lee, J.-M. Lee, J. H. Lee, M. Uhm, W. H. Lee, S. Hwang, I.-Y. Chung, B.-G. Park, D. M. Kim, Y.-J. Jeong,and D. H. Kim "SiNW-CMOS Hybrid Common-Source Amplifier as a Voltage-Readout Hydrogen Ion Sensor" IEEE Electron Device Letters, vol. 34, no. 1, pp. 135-137, 2013-01 PDF
  • 94 H. Bae, H. Choi, S. Oh, D. H. Kim, J. Bae, J. Kim, Y. H. Kim, and D. M. Kim "Extraction Technique for Intrinsic Subgap DOS in a-IGZO TFTs by De-Embedding the Parasitic Capacitance Through the Photonic C-V Measurement" IEEE Electron Device Letters, vol. 34, no. 1, pp. 57-59, 2013-01 PDF
  • 93 S. C. Baek, H. Bae, D. H. Kim, and D. M. Kim "Avalanche Hot Source Method for Separated Extraction of Parasitic Source and Drain Resistance in Single Metal-Oxide-Semiconductor Field Effect Transistors" Journal of Semiconductor Technology and Science, vol. 12, no. 1, pp. 46-52, 2012-03 PDF
  • 92 J. Lee, J.-M. Lee, J. H. Lee, W. H. Lee, M. Uhum, B.-G. Park, D. M. Kim, Y.-J. Jeong, and D. H. Kim "Complementary Silicon Nanowire Hydrogen Ion Sensor With High Sensitivity and Voltage Output" IEEE Electron Device Letters, vol. 33, no. 12, pp. 1768-1770, 2012-12 PDF
  • 91 Y. Kim, S. Kim, W. Kim, M. Bae, H. K. Jeong, D. Kong, S. Choi, D. M. Kim and D. H. Kim "Amorphous InGaZnO Thin-Film Transistors-Part II Modeling and Simulation of Negative Bias Illumination Stress-Induced Instability" IEEE Transactions on Electron Devices, vol. 59, no. 10, pp. 2699-2706, 2012-10 PDF
  • 90 Y. Kim, M. Bae, W. Kim, D. Kong, H. K. Jeong, H. Kim, S. Choi, D. M. Kim and D. H. Kim "Amorphous InGaZnO Thin-Film Transistors-Part I: Complete Extraction of Density of States Over the Full Subband-Gap Energy Range" IEEE Transactions on Electron Devices, vol. 59, no. 10, pp. 2689-2698, 2012-10 PDF
  • 89 E. Hong, D. Yun, H. Bae, H. Choi, W. H. Lee, M. Uhm, H. Seo, J. Lee, J. Jang, D. H. Kim, and D. M. Kim "Subbandgap Optical Differential Body-Factor Technique and Characterization of Interface States in SOI MOSFETs" IEEE Electron Device Letters, vol. 33, no. 7, pp. 922-924, 2012-07 PDF
  • 88 H. Bae, S. Jun, C. Jo, H. Choi, J. Lee, Y. H. Kim, S. Hwang, H. K. Jeong, I. Hur, W. Kim, D. Yun, E. Hong, H. Seo, D. H. Kim, and D. M. Kim "Modified Conductance Method for Extraction of Subgap Density-of-States in a-IGZO Thin-Film Transistors" IEEE Electron Device Letters, vol. 33, no. 8, pp.. 1138-1140, 2012-08 PDF
  • 87 H. Bae, I. Hur, J. S. Shin, D. Yun, E. Hong, K.-D. Jung, M.-S. Park, S. Choi, W. H. Lee, M. Uhm, D. H. Kim, and D. M. Kim "Hybrid C-V and I-V Technique for Separate Extraction of Structure- and Bias-Dependent Parasitic Resistances in a-InGaZnO TFTs" IEEE Electron Device Letters, vol. 33, no 4, 2012-04 PDF
  • 86 J. Jang, J. Kim, M. Bae, J. Lee, D. M. Kim, and D. H. Kim "Extraction of the sub-bandgap density-of-states in polymer thin-film transistor with the multi-frequency capacitance-voltage spectroscopy" Appl. Phys. Letters, vol. 100, issue. 13, p. 133506, 2012-03 PDF
  • 85 M. Bae, D. Yun, Y. Kim, D. Kong, H. K. Jeong, W. Kim, J. Kim, I. Hur, D. H. Kim, and D. M. Kim "Differential Ideality Factor Technique for Extraction of Subgap Density of States in Amorphous InGaZnO Thin-Film Transistors" IEEE Electron Device Letters, vol.33, no. 3, pp. 339-401, 2012-03 PDF
  • 84 J. S. Shin H. Choi, H. Bae, J. Jang, D. Yun, E. Hong, D. H. Kim, and D. M. Kim "Vertical Gate Si/SiGe Double HBT-based Capacitorless 1T DRAM Cell for Extended Retention time at Low Latch Voltage" IEEE Electron Device Letters, vol.33, no. 2, pp. 134-136, 2012-02 PDF
  • 83 S. Kim, Y. W. Jeon, Y. Kim, D. Kong, H. K. Jung, M. Bae, J.-H. Lee, B. D. Ahn, S. Y. Park, J.-H. Park, J. Park, H.-I. Kwon, D. M. Kim, and D. H. Kim "Impact of Oxygen Flow Rate on the Instability under Positive Bias-Stresses in DC Sputtered Amorphous InGaZnO Thin-Film Transistors" IEEE Electron Device Letters, vol. 33, no. 1,pp. 62-64, 2012-01 PDF
  • 82 D. H. Kim, Y. W. Jeon, S. Kim, Y. Kim, Y. S. Yu, D. M. Kim, and H.-I. Kwon "Physical Parameter-Based SPICE Models for InGaZnO Thin Film Transistors Applicable to Process Optimization and Robust Circuit Design" IEEE Electron Device Letters, vol. 33, no. 1, pp. 59-61, 2012-01 PDF
  • 81 J. Jang, J. C. Park, D. Kong, D. M. Kim, J.-S. Lee, B.-H Sohn, I. H. Cho, and D. H. Kim "Endurance Characteristics of Amorphous-InGaZnO Transparent Flash Memory With Gold Nanocrystal Storage Layer" IEEE Trans. Electron Devices, vol. 58, no. 11, pp. 3940-3947, 2011-11 PDF
  • 80 J. S. Shin, H. Bae, J. Jang, D. Yun, J. Lee, D. H. Kim and D. M. Kim "A narrow bandgap SiGe channel superlattice bandgap engineered 1T DRAM cell for low voltage operation and extended hole retention time" Semiconductor Science and Technology, vol. 26, pp. 095025, 2011-08 PDF
  • 79 Y. W. Jeon, I. Hur, Y. Kim, M. Bae, H.-K. Jung, D. Kong, W. Kim, J. Kim, J. Jang, D. M. Kim, and D. H. Kim "Physics-Based SPICE Model of a-InGaZnO Thin-Film Transistor Using Verilog-A" Journal of Semiconductor Technology and Science, vol. 11, no. 3, 2011-09 PDF
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