68H. Bae, J. Jang, J. S. Shin, D. Yun, J. Lee, H. Jang, E. Hong, D. H. Kim, and D. M. Kim"Modeling and Separate Extraction of Gate Bias- and Channel Length-Dependent intrinsic and Extrinsic Resistance Elements in LDD MOSFETs"The 18th Korean Conference on Semiconductors, 2011-02
67Y. Jeon, I. Hur, S. Kim, Y. Kim, M.-K. Bae, H. K. Jung, D. S. Kong, W. Kim, J. Kim, H. Jang, J. Jang, J. Lee, D. M. Kim, and D. H. Kim"Phisics-Based SPICE Model of a-InGaZnO Thin Film Transistor Using Verilog-A"The 18th Korean Conference on Semiconductors, 2011-02
66D. Yun, J. Jang, H. Bae, J. S. Shin, J. Lee, H. Jang, E. Hong, W. H. Lee, M. Uhm, H. Seo, D. H. Kim, and D. M. Kim"A Study on the Hfin dependence of Intrinsic gate delay in FinFET"The 18th Korean Conference on Semiconductors, 2011-02
65Y. W. Jeon, S. Kim, S. Lee, D. M. Kim, D. H. Kim, S. W. Kim, S. I. Kim, J. Park, U-I. Chung, C.-J. Kim, J.-H. Lee, B. D. Ahn, S. Y. Park, J.-H. Park, J. H. Kim and J. Park"Subgap Density of States-Based Amorphous Oxide Thin Film Transistor Simulator (DAOTS) for Process Optimization and Circuit Design"in SID'10 Dig. Tech. Papers, pp. 1385-1388, 2010-05
64S. Lee, S. Kim, Y. W. Jeon, D. M. Kim, D. H. Kim, J.-H. Lee, B. D. Ahn, S. Y. Park, J.-H. Park, J. H. Kim and J. Park"Comparison between a-InGaZnO and a-InHfZnO TFTs in Perspective of Subgap Density of States (DOS) in Active Film"in SID'10 Dig. Tech. Papers, pp. 1389-1392, 2010-05
63S. Kim, Y. W. Jeon, S. Lee, D. M. Kim, D. H. Kim, S. W. Kim, S. I. Kim, J. Park, U-I. Chung and C.-J. Kim"Analysis on AC stress-Induced Degradation Mechanism of Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistor Inverters"in SID'10 Dig. Tech. Papers, pp. 1380-1384, 2010-05
62S. Lee, J. Jang, J. Shin, H. Kim, H. Bae, D. Yun, D. H. Kim, and D. M. Kim"A Novel Superlattice Band-Gap Engineered (SBE) Capacitorless DRAM Cell with Extremely Short Channel Length Down to 30 nm"IEEE International Memory Workshop (IMW), 2010-05
61D. Kong, S. Lee, Y. Jeon, S. Kim, Y. Kim, H. Jung, M. Bae, D. M. Kim and D. H. Kim"Electrical stress-induced instability of amorphous InGaZnO thin-film transistors under bipolar AC stress"The 17th Korean Conference on Semiconductors, 2010-02
60S. C. Baek, S. W. Park, H. Y. Bae, J. M. Jang, J. E. Lee, S. Y. Lee, H. R. Jang, H. J. Kim, D. Y. Yun, J. S. Shin, D. H. Kim, and D. M. Kim"Accurate Extraction of Gate Capacitances in Leaky MOS Systems using Modified 3-element circuit Model Combining the Multi-Frequency Capacitance-Voltage Method"The 17th Korean Conference on Semiconductors, 2010-02
59Y. W. Jeon, S. Lee, S. Kim, H. Jung, D. Kong, Y. Kim, M. Bae, D. M. Kim, and D. H. Kim"A physical parameter based on DC I-V numerical model of amorphous InGaZnO Thin Film Transistors"The 17th Korean Conference on Semiconductors, 2010-02
58S. Lee, S. Park, S. Kim, Y. Jeon, D. Kong , M.-K. Bae, H. K. Jung, Y. S. Kim, D. M. Kim, and D. H. Kim"Subgap Density-of-States Extraction of Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors by Using Multiple Frequency C-V Characteristics"The 17th Korean Conference on Semiconductors, 2010-
57S. Lee, Y. W. Jeon, J. Jang, J. S. Sin, H. J. Kim, H. Y. Bae, D. H. Yun, D. H. Kim, and D. M. Kim"A Novel Self-Aligned 4-bit SONOS-Type Non-Volatile Memory Cell with T-Gate and I-Shaped FinFET Structure and Low Current Sense Amplifier"The 17th Korean Conference on Semiconductors, 2010-
56S. Lee, Y. Jeon, S. Kim, M.-K. Bae, D. Kong, Y. Kim, H. K. Jung, D. M. Kim, and D. H. Kim"Characterization of the C-V Response of Amorphous Indium Gallium Zinc Oxide TFTs"17th Korean Conference on Semiconductors, 2010-
55S. Lee, K. Jeon, J.-H. Park, Y. W. Jeon, C. Kim, I. Song, J. Park, S. Kim, S. Kim, Y. Park, D. H. Kim, and D. M. Kim"Modeling and Characterization of Metal-Semiconductor-Metal-based Source-Drain Contacts for Design and Robust Implementation of a -GaInZnO TFTs"The 16th Korean Conference on Semiconductors, 2009-
54J. C. Park, S. W. Kim, S. I. Kim, H. Yin, J. H. Hur, S. H. Jeon, S. H. Park, I. H. Song, Y. S. Park, U. I. Chung, M. K. Ryu, S. Lee, S. Kim, Y. Jeon, D. M. Kim, D. H. Kim, K.-W. Kwon and C. J. Kim"High performance amorphous oxide thin film transistors with self-aligned top-gate structure"IEDM Tech. Dig., pp. 191-194, 2009-
53J.-H. Park, K. Jeon, S. Lee, Y. W. Jeon, C. Kim, I. Song, J. Park, S. Kim, S. Kim, Y. Park, D. M. Kim, and D. H. Kim"Density of States-Based Model of Amorphous GaInZnO Thin Film Transistors by Using Optical Charge Pumping Technique"The 16th Korean Conference on Semiconductors, 2009-
52T. Y. Kim, S. R. Park, S.-C. Baek, Y. W. Jeon, Y. J. Seo, H.-M. An, T. G. Kim, D. H. Kim, and D. M. Kim"Extraction of Trap Energy Distribution in Nitride-based MANOS Charge Trap Flash Memory by Combining the Iteration Method with Optical C-V Measurement"The 16th Korean Conference on Semiconductors, 2009-
51C. Choi, S. R. Park, J. Jang, J.-S. Lee, K.-S. Min, J. G. Lee, D. M. Kim, and D. H. Kim"Comparative Study on Program/Erase Speed, Retention, and Process Margin for Manufacturability of High Performance Metal Nanocrystal Memories"The 16th Korean Conference on Semiconductors, 2009-
50S. R. Park, C. Choi, D. M. Kim, and D. H. Kim"Comparative Study on Program Speed and Retention Characteristics in Advanced Nitride-Based Charge Trap Flash (CTF) Memories in Perspective of Vertical Location of Charge Traps"The 16th Korean Conference on Semiconductors, 2009-
49J. Lee, C. Choi, S. Park, J. Jang, I.-Y. Chung, C.-J. Kim, D. M. Kim, and D. H. Kim"Comparative Study on Ultra-Energy-Efficient Full Adders Based on Single-Electron Transistors"16th Korean Conference on Semiconductors, 2009-