272J. Park, S. Choi, C. Kim, H. J. Shin, Y. S. Jeong, J. U. Bae, S. Oh, D. H. Kim"Lifetime estimation of thin‑flm transistors in organic emitting diode display panels with compensation"Scientific reports, p.13, DOI: https://doi.org/10.1038/s41598-023-44684-5, 2023-
271D. Kim, J. T. Jang , W. S. Choi, H. J. Lee, J. T. Jang, E. Hong, W. Y. Yang, M. Choi, K. Y. Yamg, C. S. Lee, J. Woo and and Dae Hwan Kim"Understanding ovonic threshold switching of GeSe chalcogenide materials using electrical methodologies for extracting density of states"Applied. Physics. Letter, , 2023-08
270D. Kim, J. T. Jang , C. Kim , H. W. Kim, E. Hong, S Ban , M. Shin, H. Lee, H. D. Lee, H.-S. Mo, J. Woo and Dae Hwan Kim "Read Disturbance in Cross-Point Phase-Change Memory Arrays—Part I: Physical Modeling With Phase-Change Dynamics"IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol. 70. NO. 2, 2023-
269S. J. Myoung, C. I. Ryoo, C. Kim, S.-J. Choi, D. M. Kim, J.-H. Bae, D. H. Kim""Thermal Process and Dopant Diffusion Model of a-InGaZnO TFTs for VT Prediction Using Lateral Carrier Density Profiling Technique""IEEE Electron Device Letters, vol. 44, no. 4, pp. 630-633, doi: 10.1109/LED, 2023-04
268D. Kang, W. Kim, D. Kim, J. T. Jang, C. Kim, J. N. Kim, S.-J. Choi, J.-H. Bae, D. M. Kim, Y. Kim, and D. H. Kim"Short- and Long-Term Memory Based on a Floating-Gate IGZO Synaptic Transistor" IEEE Access, , 2023-02
267D. Kim, H. J. Lee, T J Yang, W. S. Choi, C. Kim, S.-J. Choi, J.-H. Bae, D. M. Kim, S. Kim, D. H. Kim"Compact SPICE Model of Memristor with Barrier Modulated Considering Short- and Long-Term Memory Characteristics by IGZO Oxygen Content"MDPI: Micromachines , 1630. https://doi.org/10.3390/mi13101630, 2022-09
266D. Kim, J. T. Jang , C. Kim , H. W. Kim, E. Hong, S Ban , M. Shin, H. Lee, H. D. Lee, H.-S. Mo, J. Woo and Dae Hwan Kim"Read Disturbance in Cross-Point Phase-Change Memory Arrays—Part II: Array Simulations Considering External Currents"IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol. 70. NO. 2, 2023-
265J. Park, S. Choi, C. Kim, H. J. Shin, Y. S. Jeong, J. U. Bae, C. H. Oh, S. Oh, D. H. Kim"Current Boosting of Self-Aligned Top-Gate Amorphous InGaZnO Thin-Film Transistors under Driving Conditions"Advanced Electronic Materials , DOI: 10.1002/aelm.202201109, 2023-01, 2023-01
264M. Park, H. Lee, G. Lee, S. C. Jang, Y. H. Chang, H. Hong, K.-B. Chung, K. J. Lee, D. H. Kim, H.-S. Kim"Organic/Inorganic Hybrid Top-Gate Transistors with Ultrahigh Electron Mobility via Enhanced Electron Pathways"ACS Applied Materials & Interfaces, DOI: 10.1021/acsami.2c16881, 2022-12, 2022-12
263T. J. Yang, J.-H. Kim, J. R. Cho, H. J. Lee, K. Kim, J. Park, S.-J Choi, J.-H. Bae, D. M. Kim, C. Kim, D.-W. Park, D. H. Kim"Physical model of a local threshold voltage shift in InGaZnO thin-film transistors under current stress for instability-aware circuit design"Current Applied Physics, DOI: 10.1016/j.cap.2022.11.011, 2023-02, 2023-02
262J. Park, S. Choi, S. J. Myoung, J.-Y Kim, C. Kim, S.-J. Choi, D. M. Kim, J.-H. Bae, D. H. Kim"Spatial degradation profiling technique in self-aligned top-gate a-InGaZnO TFTs under current-flowing stress"IEEE Elctron Device Letters, DOI: 10.1109/LED.2022.3225838, 2023-01
261S. Choi†, G. W. Yang†, S. Lee, J. Park, C. Kim, J. Park, H.-S. Choi, N. Lee, G.-J. Kim, Y. Kim, M. Kang, C. Kim, J.-H. Bae, D. H. Kim"Fowler–Nordheim Stress-Induced Degradation of Buried-Channel-Array Transistors in DRAM Cell for Cryogenic Memory Applications"IEEE Transactions on Electron Devices, DOI: 10.1109/TED.2022.3221028, 2022-11
260T. J. Yang†, J.-H. Kim†, C. I. Ryoo, S. J. Myoung, C. Kim, J. H. Baeck, J.-U Bae, J. Noh, S.-W. Lee, K.-S. Park, J.-J. Kim, S.-Y. Yoon, Y. Kim, D. H. Kim"Analysis of Drain-Induced Barrier Lowering in InGaZnO Thin-Film Transistors"IEEE Transactions on Electron Devices, DOI: 10.1109/TED.2022.3223642, 2022-11
259D. Kim, J-H Kim, W. S. Choi, T. J. Yang, J. T. Jang, A. Belmonte, N. Rassoul, S. Subhechha, R. Delhougne, G. S. Kar, W. Lee, M. H. Cho, D. Ha, D. H. Kim"Device modeling of two-steps oxygen anneal-based submicron InGaZnO back-end-of-line field-effect transistor enabling short-channel effects suppression"Scientific Reports, DOI: 10.1038/s41598-022-23951-x, 2022-
258S. Lee†, J. Park†, G. W. Yang, C. Kim, S.-J. Choi, D. M. Kim, J.-H. Bae*, D. H. Kim* (†These authors are co-first authors)"Analysis of a-InGaZnO TFT Threshold Voltage Instability and Mobility Boosting by Current Stress at a Cryogenic Temperature"IEEE Elctron Device Letters, DOI: 10.1109/LED.2022.3221537, 2022-
257D. Kim, H. J. Lee, T. J. Yang, W. S. Choi, C. Kim, S.-J. Choi, J.-H. Bae, D. M. Kim, S. Kim, and D. H. Kim"Effect of Post-Annealing on Barrier Modulations in Pd/IGZO/SiO2/p+ -Si Memristors"Nanomaterials, vol. 12, p. 3582, DOI: 10.3390/nano12203582, 2022-10
256H. J. Lee, D. Kim, W. S. Choi, C. Kim, S.-J. Choi, J.-H. Bae, D. M. Kim, S. Kim, D. H. Kim"Effect of oxygen flow rate on long-term and short-term Schottky barrier modulations in Pd/IGZO/SiO2/p+-Si memristors "Materials Science in Semiconductor Processing, vol. 153, p. 107183, DOI: 10.1016/j.mssp.2022.107183, 2023-01
255B. H. Lee, J. Park, A. Kumar, S. Choi, D. H. Kim, and S. Y. Lee"Structural and electronic properties with respect to Si doping in oxygen rich ZnSnO amorphous oxide semiconductor"Materials Today Communications, DOI: 10.1016/j.mtcomm.2022.104809, 2022-
254W. S. Choi, M. S. Song, H. Kim, and D. H. Kim"Conduction Mechanism Analysis of Abrupt- and Gradual-Switching InGaZnO Memristors"Micromachines, vol. 13, no. 11, p. 1870, DOI: 10.3390/ mi13111870, 2022-10
253J. Park, S. Park, J. T. Jang, S.-J. Choi, D. M. Kim, Member, IEEE, J.-H. Bae, H. J. Shin, Y. S. Jeong, J. U. Bae, C. H. Oh, C. Kim, and D. H. Kim, Senior Member, IEEE"Effect of positive bias stress on the back-gate voltage-modulated threshold voltage in double-gate amorphous InGaZnO thin-film transistors"IEEE Elctron Device Letters, DOI 10.1109/LED.2022.3206340, 2022-09