Prof. Kim`s R.P.

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  • 235 J. T. Jang, D. Ko, S. -J. Choi, D. M. Kim, and *D. H. Kim(* Corresponding author) "Observation of Hydrogen-related Defect in Subgap Density of States and Its Effects under Positive Bias Stress in amorphous InGaZnO TFT" IEEE Electron Device Letters, doi: 10.1109/LED.2021.3066624., 2021-03
  • 234 J. -H. Kim, J. T. Jang, J. -H. Bae, S. -J. Choi, D. M. Kim, C. Kim, Y. Kim 3,* and D. H. Kim*(* Corresponding author) "Analysis of Threshold Voltage Shift for Full VGS/VDS/Oxygen-Content Span under Positive Bias Stress in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors" Micromachines, vol. 12, no. 3, p. 327, 2021-03
  • 233 S. Kim, D. Kwon, T. -H. Kim, T. J. Park, S. -J. Cho, H. -S. Mo, D. H. Kim, and B. -G. Park "Multiplexed Silicon Nanowire Tunnel FET-Based Biosensors With Optimized Multi-Sensing Currents" IEEE Sensors Journal, vol. 21, no. 7, pp. 8839-8846, doi: 10.1109/JSEN.2021.3054052., 2021-03
  • 232 J.-T. Yu†, H. B. Yoo†, H. Kim, J. H. Ryu, S.-J. Choi, D. H. Kim, and D. M. Kim*(†These two authors contributed equally to this work.) "Characterization of Spatial Distribution of Trap Across the Substrate in Metal-Insulator-Semiconductor Structure with Band Bending Effect" Journal of Nanoscience and Nanotechnology, Vol. 21, No. 8, pp. 4315-4319, DOI: 10.1166/jnn.2021.19391, 2021-08
  • 231 J.-T. Yu†, H. B. Yoo†, H. Kim, J. H. Ryu, S.-J. Choi, D. H. Kim, and D. M. Kim*(†These two authors contributed equally to this work.) "Characterization of Spatial Distribution of Trap Across the Substrate in Metal-Insulator-Semiconductor Structure with Band Bending Effect" Journal of Nanoscience and Nanotechnology, (just accepted), 2021-
  • 230 Y. Lee†, J. Yoon†, Y. Kim†, D. M. Kim, D. H. Kim, and S.-J. Choi* (†These authors equally contributed to this work) "Humidity effects according to the type of carbon nanotubes" IEEE Access, Vol. 9, pp.6810-6816, DOI:10.1109/ACCESS.2020.3048173, 2020-12
  • 229 J. T. Jang†, J. Min†, Y. Hwang, S.-J. Choi, D. M. Kim, H. Kim*, and D. H. Kim* (†These authors equally contributed to this work & *co-corresponding authors) "Digital and Analog Switching Characteristics of InGaZnO Memristor Depending on Top Electrode Material for Neuromorphic System" IEEE Access, vol. 8, pp. 192304-192311, doi: 10.1109/ACCESS.2020.3032188, 2020-10
  • 228 H. B. Yoo1, J. Yu1, H. Kim, J. H. Ryu, S.-J. Choi, D. H. Kim, and D. M. Kim* (1 Contributed equally to this work.)(*Corresponding author.) "Deep Depletion Capacitance-Voltage Technique For Spatial Distribution of Traps Across the Substrate in MOS Structures" Solid-State Electronics, 107905, 2020-10
  • 227 S. Choi†, I. Chae†, J. Park, Y. Seo, C. I. Ryoo, D. M. Kim, S.-J. Choi, D.-W. Park*, and D. H. Kim* (†These authors equally contributed to this work & *co-corresponding authors) "Extraction Technique for Flat Band Voltage Using Multi-Frequency C-V Characteristics in Amorphous InGaZnO Thin-Film-Transistors" IEEE Electron Device Lett., Just accepted , 2020-12
  • 226 H. Kim, H. B. Yoo, J.-T. Yu, J. H. Ryu, S.-J. Choi , D. H. Kim, and D. M. Kim "Alternating Current-Based Technique for Separate Extraction of Parasitic Resistances in MISFETs With or Without the Body Contact" IEEE Electron Device Lett., vol. 41, no. 10, pp. 1528-1531, 2020-10
  • 225 J. T. Jang, D. Kim, W. S. Choi, S.-J. Choi, D. M. Kim, Y. Kim*, and D. H. Kim* (*co-corresponding authors) "One Transistor-Two Memristor Based on Amorphous Indium-Gallium-Zinc-Oxide for Neuromorphic Synaptic Devices" ACS Appl. Electron. Mater., vol. 2, no. 9, pp. 2837-2844, 2020-09
  • 224 J. T. Jang, H.-D. Kim, D. M. Kim, S.-J. Choi, H.-S. Kim*, and D. H. Kim* (*co-corresponding authors) "Effect of Anion Composition on the Bias Stress Stability in Zn–O–N Thin-Film Transistors" IEEE Electron Device Lett., vol. 41, no. 9, pp. 1376-1379, 2020-08
  • 223 Y. Lee, J. Yoon, H.-J. Kim, G.-H. Park, J. W. Jeon, D. H. Kim, D. M. Kim, M.-H. Kang*, and S.-J. Choi* (*co-corresponding authors) "Wafer-Scale Carbon Nanotube Network Transistors" Nanotechnology, vol. 31, no. 46, p. 465303, DOI: 10.1088/1361-6528/abac31, 2020-08
  • 222 H. B. Yoo, S. K. Kim, J. Kim, J. Yu, S.-J. Choi, D. H. Kim, D. M. Kim "Characterization of Subgap Density-of-States by Sub-Bandgap Optical Charge Pumping in In0.53Ga0.47As Metal-Oxide-Semiconductor Field-Effect Transistors" Journal of Nanoscience and Nanotechnology, vol. 20, no. 7, pp. 4287-4291(5), 2020-07
  • 221 D. Kim†, J. T. Jang†, E. Yu, J. Park, J. Min, D. M. Kim, S.-J. Choi, H.-S. Mo, S. Cho*, K. Roy, D. H. Kim* (†These authors equally contributed to this work & *co-corresponding authors) "Pd/IGZO/p+-Si Synaptic Device with Self-Graded Oxygen Concentrations for Highly Linear Weight Adjustability and Improved Energy Efficiency" ACS Appl. Electron. Mater., vol. 2, no. 8, pp. 2390-2397, 2020-07
  • 220 J. Kim, C. T. T. Huong, N. V. Long, M. Yoon, M. J. Kim, J. K. Jeong, S. Choi, D. H. Kim, C. H. Lee, S. U. Lee, and M. M. Sung "Complementary Hybrid Semiconducting Superlattices with Multiple Channels and Mutual Stabilization" Nano lett., vol. 20, pp. 4864-4871, 2020-06
  • 219 J. Park†, Y. Lee†, B. Choi, J. Yoon, Y. Kim, H.-J. Kim, M.-H. Kang, D. H. Kim, D. M. Kim, and S.-J. Choi* (†These authors equally contributed to this work) "Directly drawn top-gate semiconducting carbon nanotube thin-film transistors and complementary inverters" Nanotechnology, vol. 31, no. 32, p. 32LT01, DOI:10.1088/1361-6528/ab8c06, 2020-05
  • 218 J. T. Jang†, G. Ahn†, S.-J. Choi, D. M. Kim, H. Kim*, and D. H. Kim* (†These authors equally contributed to this work & *co-corresponding authors) "LRS retention fail based on joule heating effect in InGaZnO resistive-switching random access memory" Appl. Phys. Express, vol. 13, no. 5, p. 054004, doi: 10.35848/1882-0786/ab88c1, 2020-04
  • 217 J. T. Jang, H.-D. Kim, D. M. Kim, S.-J. Choi, H.-S. Kim*, and D. H. Kim* (*co-correspoing authors) "Influence of Nitrogen Content on Persistent Photoconductivity in Zinc Oxynitride Thin Film Transistors" IEEE Electron Device Letters, vol. 41, no. 4, pp. 561-564, Apr. 2020, doi: 10.1109/LED.2020.2974757, 2020-04
  • 216 J. T. Jang, J. Min, D. Kim, J. Park, S.-J. Choi, D. M. Kim, S. Cho*, and D. H. Kim* (*co-corresponding authors) " A highly reliable physics-based SPICE compact model of IGZO memristor considering the dependence on electrode metals and deposition sequence" Solid-State Electronics, vol. 166 p. 107764, DOI: 10.1016/j.sse.2020.107764, 2020-04