Prof. Kim`s R.P.

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  • 272 J. Park, S. Choi, C. Kim, H. J. Shin, Y. S. Jeong, J. U. Bae, S. Oh, D. H. Kim "Lifetime estimation of thin‑flm transistors in organic emitting diode display panels with compensation" Scientific reports, p.13, DOI: https://doi.org/10.1038/s41598-023-44684-5, 2023-
  • 271 D. Kim, J. T. Jang , W. S. Choi, H. J. Lee, J. T. Jang, E. Hong, W. Y. Yang, M. Choi, K. Y. Yamg, C. S. Lee, J. Woo and and Dae Hwan Kim "Understanding ovonic threshold switching of GeSe chalcogenide materials using electrical methodologies for extracting density of states" Applied. Physics. Letter, , 2023-08
  • 270 D. Kim, J. T. Jang , C. Kim , H. W. Kim, E. Hong, S Ban , M. Shin, H. Lee, H. D. Lee, H.-S. Mo, J. Woo and Dae Hwan Kim "Read Disturbance in Cross-Point Phase-Change Memory Arrays—Part I: Physical Modeling With Phase-Change Dynamics" IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol. 70. NO. 2, 2023-
  • 269 S. J. Myoung, C. I. Ryoo, C. Kim, S.-J. Choi, D. M. Kim, J.-H. Bae, D. H. Kim ""Thermal Process and Dopant Diffusion Model of a-InGaZnO TFTs for VT Prediction Using Lateral Carrier Density Profiling Technique"" IEEE Electron Device Letters, vol. 44, no. 4, pp. 630-633, doi: 10.1109/LED, 2023-04
  • 268 D. Kang, W. Kim, D. Kim, J. T. Jang, C. Kim, J. N. Kim, S.-J. Choi, J.-H. Bae, D. M. Kim, Y. Kim, and D. H. Kim "Short- and Long-Term Memory Based on a Floating-Gate IGZO Synaptic Transistor" IEEE Access, , 2023-02
  • 267 D. Kim, H. J. Lee, T J Yang, W. S. Choi, C. Kim, S.-J. Choi, J.-H. Bae, D. M. Kim, S. Kim, D. H. Kim "Compact SPICE Model of Memristor with Barrier Modulated Considering Short- and Long-Term Memory Characteristics by IGZO Oxygen Content" MDPI: Micromachines , 1630. https://doi.org/10.3390/mi13101630, 2022-09
  • 266 D. Kim, J. T. Jang , C. Kim , H. W. Kim, E. Hong, S Ban , M. Shin, H. Lee, H. D. Lee, H.-S. Mo, J. Woo and Dae Hwan Kim "Read Disturbance in Cross-Point Phase-Change Memory Arrays—Part II: Array Simulations Considering External Currents" IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol. 70. NO. 2, 2023-
  • 265 J. Park, S. Choi, C. Kim, H. J. Shin, Y. S. Jeong, J. U. Bae, C. H. Oh, S. Oh, D. H. Kim "Current Boosting of Self-Aligned Top-Gate Amorphous InGaZnO Thin-Film Transistors under Driving Conditions" Advanced Electronic Materials , DOI: 10.1002/aelm.202201109, 2023-01, 2023-01
  • 264 M. Park, H. Lee, G. Lee, S. C. Jang, Y. H. Chang, H. Hong, K.-B. Chung, K. J. Lee, D. H. Kim, H.-S. Kim "Organic/Inorganic Hybrid Top-Gate Transistors with Ultrahigh Electron Mobility via Enhanced Electron Pathways" ACS Applied Materials & Interfaces, DOI: 10.1021/acsami.2c16881, 2022-12, 2022-12
  • 263 T. J. Yang, J.-H. Kim, J. R. Cho, H. J. Lee, K. Kim, J. Park, S.-J Choi, J.-H. Bae, D. M. Kim, C. Kim, D.-W. Park, D. H. Kim "Physical model of a local threshold voltage shift in InGaZnO thin-film transistors under current stress for instability-aware circuit design" Current Applied Physics, DOI: 10.1016/j.cap.2022.11.011, 2023-02, 2023-02
  • 262 J. Park, S. Choi, S. J. Myoung, J.-Y Kim, C. Kim, S.-J. Choi, D. M. Kim, J.-H. Bae, D. H. Kim "Spatial degradation profiling technique in self-aligned top-gate a-InGaZnO TFTs under current-flowing stress" IEEE Elctron Device Letters, DOI: 10.1109/LED.2022.3225838, 2023-01
  • 261 S. Choi†, G. W. Yang†, S. Lee, J. Park, C. Kim, J. Park, H.-S. Choi, N. Lee, G.-J. Kim, Y. Kim, M. Kang, C. Kim, J.-H. Bae, D. H. Kim "Fowler–Nordheim Stress-Induced Degradation of Buried-Channel-Array Transistors in DRAM Cell for Cryogenic Memory Applications" IEEE Transactions on Electron Devices, DOI: 10.1109/TED.2022.3221028, 2022-11
  • 260 T. J. Yang†, J.-H. Kim†, C. I. Ryoo, S. J. Myoung, C. Kim, J. H. Baeck, J.-U Bae, J. Noh, S.-W. Lee, K.-S. Park, J.-J. Kim, S.-Y. Yoon, Y. Kim, D. H. Kim "Analysis of Drain-Induced Barrier Lowering in InGaZnO Thin-Film Transistors" IEEE Transactions on Electron Devices, DOI: 10.1109/TED.2022.3223642, 2022-11
  • 259 D. Kim, J-H Kim, W. S. Choi, T. J. Yang, J. T. Jang, A. Belmonte, N. Rassoul, S. Subhechha, R. Delhougne, G. S. Kar, W. Lee, M. H. Cho, D. Ha, D. H. Kim "Device modeling of two-steps oxygen anneal-based submicron InGaZnO back-end-of-line field-effect transistor enabling short-channel effects suppression" Scientific Reports, DOI: 10.1038/s41598-022-23951-x, 2022-
  • 258 S. Lee†, J. Park†, G. W. Yang, C. Kim, S.-J. Choi, D. M. Kim, J.-H. Bae*, D. H. Kim* (†These authors are co-first authors) "Analysis of a-InGaZnO TFT Threshold Voltage Instability and Mobility Boosting by Current Stress at a Cryogenic Temperature" IEEE Elctron Device Letters, DOI: 10.1109/LED.2022.3221537, 2022-
  • 257 D. Kim, H. J. Lee, T. J. Yang, W. S. Choi, C. Kim, S.-J. Choi, J.-H. Bae, D. M. Kim, S. Kim, and D. H. Kim "Effect of Post-Annealing on Barrier Modulations in Pd/IGZO/SiO2/p+ -Si Memristors" Nanomaterials, vol. 12, p. 3582, DOI: 10.3390/nano12203582, 2022-10
  • 256 H. J. Lee, D. Kim, W. S. Choi, C. Kim, S.-J. Choi, J.-H. Bae, D. M. Kim, S. Kim, D. H. Kim "Effect of oxygen flow rate on long-term and short-term Schottky barrier modulations in Pd/IGZO/SiO2/p+-Si memristors " Materials Science in Semiconductor Processing, vol. 153, p. 107183, DOI: 10.1016/j.mssp.2022.107183, 2023-01
  • 255 B. H. Lee, J. Park, A. Kumar, S. Choi, D. H. Kim, and S. Y. Lee "Structural and electronic properties with respect to Si doping in oxygen rich ZnSnO amorphous oxide semiconductor" Materials Today Communications, DOI: 10.1016/j.mtcomm.2022.104809, 2022-
  • 254 W. S. Choi, M. S. Song, H. Kim, and D. H. Kim "Conduction Mechanism Analysis of Abrupt- and Gradual-Switching InGaZnO Memristors" Micromachines, vol. 13, no. 11, p. 1870, DOI: 10.3390/ mi13111870, 2022-10
  • 253 J. Park, S. Park, J. T. Jang, S.-J. Choi, D. M. Kim, Member, IEEE, J.-H. Bae, H. J. Shin, Y. S. Jeong, J. U. Bae, C. H. Oh, C. Kim, and D. H. Kim, Senior Member, IEEE "Effect of positive bias stress on the back-gate voltage-modulated threshold voltage in double-gate amorphous InGaZnO thin-film transistors" IEEE Elctron Device Letters, DOI 10.1109/LED.2022.3206340, 2022-09