230Y. Lee†, J. Yoon†, Y. Kim†, D. M. Kim, D. H. Kim, and S.-J. Choi* (†These authors equally contributed to this work)"Humidity effects according to the type of carbon nanotubes"IEEE Access, Vol. 9, pp.6810-6816, DOI:10.1109/ACCESS.2020.3048173, 2020-12
229J. T. Jang†, J. Min†, Y. Hwang, S.-J. Choi, D. M. Kim, H. Kim*, and D. H. Kim* (†These authors equally contributed to this work & *co-corresponding authors)"Digital and Analog Switching Characteristics of InGaZnO Memristor Depending on Top Electrode Material for Neuromorphic System"IEEE Access, vol. 8, pp. 192304-192311, doi: 10.1109/ACCESS.2020.3032188, 2020-10
228H. B. Yoo, J. Yu, H. Kim, J. H. Ryu, S.-J. Choi, D. H. Kim, and D. M. Kim "Deep Depletion Capacitance-Voltage Technique For Spatial Distribution of Traps Across the Substrate in MOS Structures"Solid-State Electronics, 107905, 2020-10
227S. Choi†, I. Chae†, J. Park, Y. Seo, C. I. Ryoo, D. M. Kim, S.-J. Choi, D.-W. Park*, and D. H. Kim* (†These authors equally contributed to this work & *co-corresponding authors)"Extraction Technique for Flat Band Voltage Using Multi-Frequency C-V Characteristics in Amorphous InGaZnO Thin-Film-Transistors"IEEE Electron Device Lett., Just accepted , 2020-10
226H. Kim, H. B. Yoo, J.-T. Yu, J. H. Ryu, S.-J. Choi , D. H. Kim, and D. M. Kim"Alternating Current-Based Technique for Separate Extraction of Parasitic Resistances in MISFETs With or Without the Body Contact"IEEE Electron Device Lett., vol. 41, no. 10, pp. 1528-1531, 2020-10
225J. T. Jang, D. Kim, W. S. Choi, S.-J. Choi, D. M. Kim, Y. Kim*, and D. H. Kim* (*co-corresponding authors)"One Transistor-Two Memristor Based on Amorphous Indium-Gallium-Zinc-Oxide for Neuromorphic Synaptic Devices"ACS Appl. Electron. Mater., vol. 2, no. 9, pp. 2837-2844, 2020-09
224J. T. Jang, H.-D. Kim, D. M. Kim, S.-J. Choi, H.-S. Kim*, and D. H. Kim* (*co-corresponding authors)"Effect of Anion Composition on the Bias Stress Stability in Zn–O–N Thin-Film Transistors"IEEE Electron Device Lett., vol. 41, no. 9, pp. 1376-1379, 2020-08
223Y. Lee, J. Yoon, H.-J. Kim, G.-H. Park, J. W. Jeon, D. H. Kim, D. M. Kim, M.-H. Kang*, and S.-J. Choi* (*co-corresponding authors)"Wafer-Scale Carbon Nanotube Network Transistors"Nanotechnology, vol. 31, no. 46, p. 465303, DOI: 10.1088/1361-6528/abac31, 2020-08
222H. B. Yoo, S. K. Kim, J. Kim, J. Yu, S.-J. Choi, D. H. Kim, D. M. Kim"Characterization of Subgap Density-of-States by Sub-Bandgap Optical Charge Pumping in In0.53Ga0.47As Metal-Oxide-Semiconductor Field-Effect Transistors" Journal of Nanoscience and Nanotechnology, vol. 20, no. 7, pp. 4287-4291(5), 2020-07
221D. Kim†, J. T. Jang†, E. Yu, J. Park, J. Min, D. M. Kim, S.-J. Choi, H.-S. Mo, S. Cho*, K. Roy, D. H. Kim* (†These authors equally contributed to this work & *co-corresponding authors)"Pd/IGZO/p+-Si Synaptic Device with Self-Graded Oxygen Concentrations for Highly Linear Weight Adjustability and Improved Energy Efficiency"ACS Appl. Electron. Mater., vol. 2, no. 8, pp. 2390-2397, 2020-07
220J. Kim, C. T. T. Huong, N. V. Long, M. Yoon, M. J. Kim, J. K. Jeong, S. Choi, D. H. Kim, C. H. Lee, S. U. Lee, and M. M. Sung"Complementary Hybrid Semiconducting Superlattices with Multiple Channels and Mutual Stabilization"Nano lett., vol. 20, pp. 4864-4871, 2020-06
219J. Park†, Y. Lee†, B. Choi, J. Yoon, Y. Kim, H.-J. Kim, M.-H. Kang, D. H. Kim, D. M. Kim, and S.-J. Choi* (†These authors equally contributed to this work)"Directly drawn top-gate semiconducting carbon nanotube thin-film transistors and complementary inverters"Nanotechnology, vol. 31, no. 32, p. 32LT01, DOI:10.1088/1361-6528/ab8c06, 2020-05
218J. T. Jang†, G. Ahn†, S.-J. Choi, D. M. Kim, H. Kim*, and D. H. Kim* (†These authors equally contributed to this work & *co-corresponding authors)"LRS retention fail based on joule heating effect in InGaZnO resistive-switching random access memory"Appl. Phys. Express, vol. 13, no. 5, p. 054004, doi: 10.35848/1882-0786/ab88c1, 2020-04
217J. T. Jang, H.-D. Kim, D. M. Kim, S.-J. Choi, H.-S. Kim*, and D. H. Kim* (*co-correspoing authors)"Influence of Nitrogen Content on Persistent Photoconductivity in Zinc Oxynitride Thin Film Transistors"IEEE Electron Device Letters, vol. 41, no. 4, pp. 561-564, Apr. 2020, doi: 10.1109/LED.2020.2974757, 2020-04
216J. T. Jang, J. Min, D. Kim, J. Park, S.-J. Choi, D. M. Kim, S. Cho*, and D. H. Kim* (*co-corresponding authors)" A highly reliable physics-based SPICE compact model of IGZO memristor considering the dependence on electrode metals and deposition sequence"Solid-State Electronics, vol. 166 p. 107764, DOI: 10.1016/j.sse.2020.107764, 2020-04
215S. Choi, H.-S. Mo, J. Kim, S. Kim, S. M. Lee, S.-J. Choi, D. M. Kim, D.-W. Park,* and D. H. Kim*(*co-corresponding authors)"Experimental Extraction of Stern-Layer Capacitance in Biosensor Detection Using Silicon Nanowire Field-Effect Transistors"Current Applied Physics, vol. 20, no. 6, pp. 828-833, DOI: 10.1016/j.cap.2020.02.021, 2020-03
214Y. Lee, J. Yoon, J. T. Jang, B. Choi, H.-J. Kim, G.-H. Park, D. M. Kim, D. H. Kim, M.-H.Kang*, and S.-J. Choi* (*co-corresponding authors)"Hybrid integration of carbon nanotube and amorphous IGZO thin-film transistors"AIP Advances, vol. 10, no. 2, p. 025131, DOI: 10.1063/1.5139085, 2020-02
213Y. Lee†, G.-H. Park†, B. Choi, J. Yoon, H.-J. Kim, D. H. Kim, D. M. Kim, M.-H. Kang*, and S.-J. Choi* (†These authors equally contributed to this work & *co-corresponding authors)"Design study of the gate-all-around silicon nanosheet MOSFETs"Semiconductor Science and Technology, vol. 35, no. 3, p. 03LT01, DOI: 10.1088/1361-6641/ab6bab, 2020-02
212J. Lee†, J. T. Jang†, J. Jang, J. Kim, J. W. Chung, S.-J. Choi, D. M. Kim, K. R. Kim, and D. H. Kim"Density-of-States Based Physical Model for Ink-jet Printed Thiophene Polymeric TFTs"IEEE Transactions on Electron Devices, vol. 67, no. 1, pp. 283-288, doi: 10.1109/TED.2019.2953193, 2020-01
211S. Choi†, S. G. Seo†, H. R. Yu, S. Y. Kim, D. H. Kim*, and S. H. Jin*(†These authors equally contributed to this work & *co-corresponding authors)"Hydrophobic Polymer Encapsulation Effects on Subgap Density of States in Multi-Layered MoS2 Field Effect Transistors"Physica status solidi (a), 1900492, DOI : 10.1002/pssr.201900492, 2019-12