Prof. Kim`s R.P.

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  • 170 J. Jang, J. Kim, S. Kim, H.-S. Mo, D. M. Kim, S.-J. Choi, B.-G. Park, D. H. Kim, J. Park "Analysis and modeling on the pH-dependent current drift of Si nanowire ion-sensitive field effect transistor (ISFET)-based biosensors" Journal of Nanoscience and Nanotechnology, Vol. 17, NO. 5, pp. 3146–3150, DOI: 10.1166/jnn.2017.14037, 2017-05
  • 169 S. Kim, J. Kim, J. Jang, H.-S. Mo, D. M. Kim, S.-J. Choi, B.-G. Park, D. H. Kim, J. Park "Sampling time and pH-dependences of SiNW ISFET-based biosensors" Journal of Nanoscience and Nanotechnology, Vol. 17, NO. 5, pp. 3257-3260, DOI:10.1166/jnn.2017.14038, 2017-05
  • 168 D. H. Kim, S. Choi, J. Jang, H. Kang, D. M. Kim, S.-J. Choi, Y.-S. Kim, S. Oh, J. H. Baeck, J. U. Bae, K.-S. Park, S. Y. Yoon, and In B. Kang "Experimental decomposition of the positive bias temperature stress-induced instability in self-aligned coplanar InGaZnO thin-film transistors and its modeling based on the multiple stretched-exponenti" Journal of the SID(Society of Information Display), Vol. 25, No.2, pp.98-107, DOI : 10.1002/jsid.531, 2017-02
  • 167 C. Yoon, J. H. Lee, S. Lee, J. H. Jeon, J. T. Jang, D. H. Kim, Y. H. Kim, and B. H. Park "Synaptic Plasticity Selectively Activated by Polarization-Dependent Energy-Efficient Ion Migration in an Ultrathin Ferroelectric Tunnel Junction" Nano Letters, vol. 17, no. 3, pp 1949–1955, DOI: 10.1021/acs.nanolett.6b05308, 2017-02
  • 166 H. Lee, J. Kim, S. Choi, S. K. Kim, J. Kim, J. Park, S.-J. Choi, D. H. Kim, D. M. Kim "Band-Bending Effect in the Characterization of Subgap Density-of-States in Amorphous TFTs Through Fully Electrical Techniques" IEEE Electron Device Letters, vol. 38, no. 2, DOI: 10.1109/LED.2016.2636301, 2017-02
  • 165 H. Lee, J. Kim, S. Choi, S. K. Kim, J. Kim, J. Park, S.-J. Choi, D. H. Kim, D. M. Kim "Band-Bending Effect in the Characterization of Subgap Density-of-States in Amorphous TFTs through Fully Electrical Techniques" IEEE Electron Device Letters, vol. 38, no. 2, DOI: 10.1109/LED.2016.2636301, 2017-02
  • 164 S. K. Kim, D.-M. Geum, J.-P. Shim, C. Z. Kim, H.-J. Kim, J. D. Song, W. J. Choi, S.-J. Choi, D. H. Kim, S. Kim, D. M. Kim "Fabrication and characterization of Pt/Al2O3/Y2O3/In0.53Ga0.47As MOSFETs with low interface trap density" Applied Physics Letters, vol. 110, no. 4, DOI: 10.1063/1.4974893, 2017-01
  • 163 J. Lee, J. Yoon, B. Choi, D. Lee, D. M. Kim, D. H. Kim, Y.-K. Choi, S.-J. Choi "Ink-jet printed semiconducting carbon nanotube ambipolar transistors and inverters with chemical doping technique using polyethyleneimine" Applied Physics Letters, vol. 109, no. 26, p. 263103, DOI: 10.1063/1.4973360, 2016-12
  • 162 C.-Y. Jeong, H.-J. Kim, D.-H. Kim, H.-S. Kim, T. S. Kim, J.-B. Seon, S. Lee, D. H. Kim, H.-I. Kwon "Investigation of Carrier Transport Mechanism in High Mobility ZnON Thin-Film Transistors" IEEE Electron Device Letters, vol. 37, no. 12, pp.1570-1573 DOI: 10.1109/LED.2016.2619684, 2016-12
  • 161 S. Kim, D. W. Kwon, R. Lee, D. H. Kim, B.-G. Park "Investigation of drift effect on silicon nanowire field effect transistor based pH sensor" Japanese Journal of Applied Physics, vol. 55, no. 6S1, DOI: 10.7567/JJAP.55.06GG01, 2016-04
  • 160 C.-Y. Jeong, H.-J. Kim, D.-H. Kim, H.-S. Kim, E. S. Kim, T. S. Kim, J. S. Park, J.-B. Seon, K. S. Son, S. Lee, S.-H. Cho, Y. S. Park, D. H. Kim, H.-I. Kwon "Investigation of Low-Frequency Noise Properties in High-Mobility ZnON Thin-Film Transistors" IEEE Electron Device Letters, vol. 37, no. 6, pp. 739-742, DOI: 10.1109/LED.2016.2558204, 2016-06
  • 159 J. Kim§, H. Lee§, S. K. Kim, J. Kim, J. Park, S.-J. Choi, D. H. Kim, D. M. Kim ( §These authors equally contributed to this work) "Hybrid Open Drain Method and Fully Current- Based Characterization of Asymmetric Resistance Components in a Single MOSFET" IEEE Transactions on Electron Devices, Vol. 63, no. 11, pp. 4196-4200, DOI: 10.1109/TED.2016.2607721, 2016-09
  • 158 J. Yoon§, J. Lee§, B. Choi§, D. Lee, D. H. Kim, D. M. Kim, D.-I. Moon, M. Lim, S. Kim, S.-J. Choi ( §These authors equally contributed to this work) "Flammable carbon nanotube transistors on a nitrocellulose paper substrate for transient electronics" Nano Research, DOI: 10.1007/s12274-016-1268-6, 2016-09
  • 157 K. M. Lee, J. T. Jang, Y.-J. Baek, H. Kang, S. Choi, S.-J. Choi, D. M. Kim, C. J. Kang, T.-S. Yoon, H.-S. Mo, D. H. Kim "The γ -Fe2O3 Nanoparticle Assembly-Based Memristor Ratioed Logic and Its Optical Tuning" IEEE Electron Device Letters, Vol. 37, no. 8, pp. 986-989, DOI: 10.1109/LED.2016.2582523 , 2016-08
  • 156 H. M. Choi, D. J. Shin, J. H. Lee, H.-S. Mo, T. J. Park, B.-G. Park, D. M. Kim, S.-J. Choi, D. H. Kim, J. Park "The Analysis of Characteristics in Dry and Wet Environments of Silicon Nanowire-Biosensor" Journal of Nanoscience and Nanotechnology, vol. 16, no. 5, pp. 4901–4905, DOI: 10.1166/jnn.2016.12247 , 2016-05
  • 155 J. Yoon, B. Choi, S. Choi, J. Lee, J. Lee, M. Jeon, Y Lee, J. Han, J. Lee, D. M. Kim, D. H. Kim, S. Kim, S.-J. Choi "Evaluation of interface trap densities and quantum capacitance in carbon nanotube network thin-film transistors" Nanotechnology, vol. 27, no. 29, p. 295704, DOI: 10.1088/0957-4484/27/29/295704, 2016-06
  • 154 D. Kwon, J. H. Lee, S. Kim, R. Lee, H. Mo, J. Park, D. H. Kim, B.-G. Park "Drift-Free pH Detection With Silicon Nanowire Field-Effect Transistors" IEEE Electron Device Letters, vol. 37, no. 5, pp. 652-655, DOI: 10.1109/LED.2016.2542846, 2016-05
  • 153 S. K. Kim, J. Lee, D.-M. Geum, M.-S. Park, W. J. Choi, S.-J. Choi, D. H. Kim, S. Kim*, D. M. Kim* (*co-corresponding authors) "Fully Subthreshold Current-Based Characterization of Interface Traps and Surface Potential in III-V-on-Insulator MOSFETs" Solid-State Electronics, vol. 122, pp. 8-12, DOI: 10.1016/j.sse.2016.04.011, 2016-04
  • 152 J. Y. Choi, S. Kim, D. H. Kim, S. Y. Lee "Role ofmetal capping layer on highly enhanced electrical performance of In-free Si–Zn–Sn–O thin film transistor" Thin Solid Films, vol. 594, pp. 293–298, 2015-11
  • 151 S. Choi, H. Kim, C. Jo, H.-S. Kim, S.-J. Choi, D. M. Kim, J. Park, D. H. Kim "The Effect of Gate and Drain Fields on the Competition Between Donor-Like State Creation and Local Electron Trapping in In–Ga–Zn–O Thin Film Transistors Under Current Stress" IEEE Electron Device Letters, vol. 36, no. 12, pp. 1336-1339, 2015-12
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