208B. Choi, J. Yoon, Y. Lee, J. Han, J. Lee, Y. Kim, J. Park, D. M. Kim, D. H. Kim, and S.-J. Choi*"A pseudo-CMOS inverter with top-gated 99% semiconducting carbon nanotube network transistors"The 24th Korean Conference on Semiconductors, 2018-02
207Y. Lee, B. Choi, J. Yoon, J. Han, J. Lee, J. Park, Y. Kim, D. M. Kim, D. H. Kim, and S.-J. Choi*"99% semiconducting carbon nanotube-based diode and application in logic circuits"The 24th Korean Conference on Semiconductors, 2018-02
206J. Park, B. Choi, J. Yoon, Y. Lee, J. Han, J. Lee, Y. Kim, D. M. Kim, D. H. Kim, and S.-J. Choi*"Directly drawn carbon nanotube transistors with a high device yield and uniform performance"The 24th Korean Conference on Semiconductors, 2018-02
205Y. Kim, B. Choi, J. Yoon, Y. Lee, J. Han, J. Lee, J. Park, D. M. Kim, D. H. Kim, and S.-J. Choi*"Optimization of the performance in humidity sensor based on pre-separated 99% metallic single-walled carbon nanotube"The 24th Korean Conference on Semiconductors, 2018-02
204G. Ahn, J. T. Jang, D. Ko, H. Yu, H. Jung, J. Rhee, H.-S. Mo, S.-J. Choi, D. M. Kim, D. H. Kim"Analysis of LRS retention fail based on Joule heating effect in InGaZnO RRAM"The 24th Korean Conference on Semiconductors, 2018-02
203S. Choi, J.-Y. Kim, J. Kim, J. Rhee, H. R. Yu, H. Kang, S.-J. Choi, D. M. Kim, and D. H. Kim"Extraction Method of Temperature-Independent Subgap Density-of-States of a-IGZO TFTs by using Fermi-Dirac distribution"The 24th Korean Conference on Semiconductors, 2018-02
202H. R. Yu, J. T. Jang, G. Ahn, S.-J. Choi, D. M. Kim, and D. H. Kim"Study on Negative Bias Stress-induced Instability in Zinc Oxynitride Thin-Film Transistors using Systematic Decomposition"The 24th Korean Conference on Semiconductors, 2018-02
201J. T. Jang, S.-J. Choi, D. M. Kim, D. H. Kim"Activation Energy Window-Based Modeling on the NBIS-induced Instability in Amorphous InGaZnO Thin-Film Transistors"ICEIC, 2018-01
200J. Yoon†, B. Choi†, Y. Lee, J. Han, J. Lee, J. Park, Y. Kim, D. M. Kim, D. H. Kim, M.-H. Kang, S. Kim*, S.-J. Choi*( †These authors equally contributed to this work)(*co-corresponding authors)"Monolithically 3D-Printed Pressure Sensors for Application in Electronic Skin and Healthcare Monitoring"IEDM, 2017-12
199J. Yoon§, B. Choi§, Y. Lee, J. Lee, J. Park, Y. Kim, D. M. Kim, D. H. Kim, M.-H. Kang, S. Kim, and S.-J. Choi"Monolithically 3D-Printed Pressure Sensors for Application in Electronic Skin Healthcare Monitoring"IEDM, 2017-09
198J. Rhee, S. Choi, J.-Y. Kim, S.-J. Choi, D. M. Kim,and D. H. Kim*"Relationship between the tunneling distance and stretched-exponential function model on the positive bias stress-induced charge trapping in IGZO TFTs"IMID 2017, 2017-08
197B. Choi, J. Yoon, D. M. Kim, D. H. Kim, and S.-J. Choi"High-performance top-gated 99% semiconducting carbon nanotube network transistor with high device yield and uniformity"NANO KOREA, 2017-07
196J. Yoon, J. Han, B. Choi, D. M. Kim, D. H. Kim, and S.-J. Choi"Carbon nanotube transistor on 3-D printed polyvinyl alcohol (PVA) substrate for transient electronics"NANO KOREA, 2017-07
195Y. Lee, J. Yoon, B. Choi, H. Lee, D. M. Kim, D. H. Kim, and S.-J. Choi"High-performance, ink-jet printed 99% semiconducting carbon nanotube transistors with enhanced contact interfaces"NANO KOREA, 2017-07
194D. H. Kim, S. Choi, J. Jang, H Kang, D. M. Kim, S.-J. Choi, Y.-S. Kim, S. Oh, J. H. Baeck, J. U. Bae, K.-S. Park, S. Y. Yoon, and In B. Kang"Experimental Decomposition of the Positive Gate-bias Temperature Stressinduced Instability and Its Modeling in InGaZnO Thin-film Transistors"IMID 2017, 2017-07
193D. H. Kim, S. Choi, J. Jang, H. Kang, D. M. Kim, S.-J. Choi, Y.-S. Kim, S. Oh, J. H. Baeck, J. U. Bae, K.-S. Park, S. Y. Yoon, and In B. Kang"Experimental Decomposition of the Positive Bias Temperature Stressinduced Instability in Self-aligned Coplanar InGaZnO Thin-film Transistors and its Modeling based on the Multiple Stretched-exponentia"Society of Information Display, 2017-05
192S. K. Kim, J.-P. Shim, D.-M. Geum, C. Z. Kim, H.-S. Kim, Y-S Kim, H.-K. Kang, J.-D. Song, S.-J. Choi, D. H. Kim, W. J. Choi, H.-J Kim, D. M. Kim* and S.-H. Kim*"High-performance In0.53Ga0.47As-OI MOSFET on Si substrates"The 24th Korean Conference on Semiconductors, 2017-02
191J. Kim, H. Lee, H. Bae, O. Seok, S.-J. Choi, D. H. Kim, and D. M. Kim"Characterization of Heterojunction Interface Traps in AlGaN/GaN HEMTs through Sub-Bandgap Photonic Response and Subthreshold Ideality Factor"The 24th Korean Conference on Semiconductors, 2017-02
190S. K. Kim, J.-P. Shim, D.-M. Geum, C. Z. Kim, H.-S. Kim, Y.-S. Kim, H.-K. Kang, J.-D. Song, S.-J. Choi, D. H. Kim, W. J. Choi, H.-j. Kim, D. M. Kim* and S. H. Kim*"Fabrication of In-Rich(>0.53) InGaAs-OI on Si by Novel Epitaxial Lift-Off"The 24th Korean Conference on Semiconductors, 2017-02
189J. Jang, J. Kim, H.-S. Mo, J. Park, B.-G. Park, S.-J. Choi, D. M. Kim, and D. H. Kim*"Experimental analysis on the setup/hold time in readout condition of Si nanowire FET-based biosensors for detecting ion and/or biomolecule in analyte solution"The 24th Korean Conference on Semiconductors, 2017-02