Prof. Kim`s R.P.

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  • 88 J. S. Shin, H. Choi, H. Bae, J. Jang, D. Yun, E. Hong, H. Seo, D. H. Kim, and D. M. Kim "Si/SiGe Vertical Gate DHBT (VerDHBT)-based 1T DRAM Cell For Improved Retention Characteristics With a Large Hysteresis window" The 19th Korean Conference on Semiconductors, 2012-02
  • 87 J. S. Shin, H. Bae, E. Hong, J. Jang, D. Yun, H. Seo, H. Choi, D. H. Kim, and D. M. Kim "Separate Extraction Technique of Gate, Source, Drain, and Substrate Resistances in Individual MOSFET Combining I-V and C-V Characteristics" The 19th Korean Conference on Semiconductors, 2012-02
  • 86 J. H. Lee, J. Lee, M-C Sun, W. H. Lee, M Uhm, S. Hwang, I-Y Chung, D. M. Kim, D. H. Kim, and B-G Park "Analysis of hysteresis characteristics of fabricated SiNW biosensor in aqueous environment with reference electrode" Silicon Nanoelectronics Workshop (SNW), 2012 IEEE Digital Object Identifier, 2012-
  • 85 H. Jang, J. Lee, J. H. Lee, H. Seo, M. Uhm, W. H. Lee, D. M. Kim, I.-Y. Chung and D. H. Kim "Analytical of current hysteresis of SiNW in the aqueous solution depending on measurement biases" 2011 11th IEEE NANO, 2011-08
  • 84 D. Kong, H. Jung, Y. Kim, M. Bae, Y. W. Jeon, S. Kim, J. Jang, J. Kim, W. Kim, I. Hur, D. M. Kim, D. H. Kim, B. D. Ahn, S. Y. Park, J.-H. Park, J. H. Kim, J. Park, and J.-H. Lee "Density-of-States Based Analysis on the Effect of Active Thin-film Thickness on Current Stress-induced Instability in Amorphous InGaZnO AMOLED Driver TFTs" in SID'11 Dig. Tech. Papers, 2011-05
  • 83 M. Bae, Y. Kim, W. Kim, D. Kong, H. Jung, Y. W. Jeon, S. Kim, I. Hur, J. Kim, D. M. Kim, D. H. Kim, B. D. Ahn, S. Y. Park, J.-H. Park, J. H. Kim, J. Park, and J.-H. Lee "Analytical I-V and C-V Models for Amorphous InGaZnO TFTs and their Application to Circuit Simulations" in SID'11 Dig. Tech. Papers, 2011-05
  • 82 Y. Kim, S. Kim, Y. Jeon, M.-K. Bae, D. S. Kong, H. K. Jung, J. Lee, J. Jang, J. Kim, W. Kim, I. Hur, D. M. Kim, and D. H. Kim "Quantitative Analysis of Negative Bias Illumination Stress-Induced Instability Mechanisms in Amorphous InGaZnO Thin-Film Transistors" The 18th Korean Conference on Semiconductors, 2011-02
  • 81 S. Kim, Y. Jeon, Y. Kim, D. S. Kong, H. K. Jung, M.-K. Bae, J. Lee, J. Jang, H. Jang, J. Kim, W. Kim, I. Hur, J.-S. Lee, D. M. Kim, and D. H. Kim "The oxygen flow-rate-dependence of electrical stress-induced instability of amorphous InGaZnO thin-film transistors" The 18th Korean Conference on Semiconductors, 2011-02
  • 80 D. S. Kong, H. K. Jung, M.-K. Bae, Y. Kim, S. Kim, Y. Jeon, J. Kim, W. Kim, I. Hur, J. Lee, J. Jang, J.-S. Lee, D. M. Kim, and D. H. Kim "The Effect of the Active Layer Thickness on the Negative Bias Illumination Stress-Induced Instability in Amorphous InGaZnO Thin-Film Transistors" The 18th Korean Conference on Semiconductors, 2011-02
  • 79 Y. Jeon, I. Hur, S. Kim, Y. Kim, M.-K. Bae, H. K. Jung, D. S. Kong, W. Kim, J. Kim, H. Jang, J. Jang, J. Lee, D. M. Kim, and D. H. Kim "Phisics-Based SPICE Model of a-InGaZnO Thin Film Transistor Using Verilog-A" The 18th Korean Conference on Semiconductors, 2011-02
  • 78 D. Yun, J. Jang, H. Bae, J. S. Shin, J. Lee, H. Jang, E. Hong, W. H. Lee, M. Uhm, H. Seo, D. H. Kim, and D. M. Kim "A Study on the Hfin dependence of Intrinsic gate delay in FinFET" The 18th Korean Conference on Semiconductors, 2011-02
  • 77 M.-K. Bae, Y. Jeon, S. Kim, Y. Kim, D. S. Kong, H. Jung, J. Lee, J. Jang, W. Kim, I. Hur, J. Kim, D. M. Kim, and D. H. Kim "Physical Parameter-Based Anaytical I-V Model of Amorphous Indium-Gallium-Zinc-Oxide thin-Film Transistors" The 18th Korean Conference on Semiconductors, 2011-02
  • 76 H. Bae, J. Jang, J. S. Shin, D. Yun, J. Lee, H. Jang, E. Hong, D. H. Kim, and D. M. Kim "Modeling and Separate Extraction of Gate Bias- and Channel Length-Dependent intrinsic and Extrinsic Resistance Elements in LDD MOSFETs" The 18th Korean Conference on Semiconductors, 2011-02
  • 75 H. Bae, S. Kim, M. Bae, H. Seo, W. H. Lee, M. Uhm, D. H. Kim, and D. M. Kim "Separate Extraction of Source and Drain Resistances in Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistor with Parallel Mode C-V Technique" The 18th Korean Conference on Semiconductors, 2011-02
  • 74 J. S. Shin, H. Bae, J. Jang, J. Lee, D. Yun, H. Jang, E. Hong, M. Uhm, W. H. Lee, H. Seo, D. H. Kim, and D. M. Kim "Superlattice Band-gap Engineered(SBE) Capacitorless 1T DRAM Cell with a Narrow Bandgap SiGe Channel for High Performance and Extended Retention of Holes" The 18th Korean Conference on Semiconductors, 2011-02
  • 73 S. Kim, Y. W. Jeon, S. Lee, D. M. Kim, D. H. Kim, S. W. Kim, S. I. Kim, J. Park, U-I. Chung and C.-J. Kim "Analysis on AC stress-Induced Degradation Mechanism of Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistor Inverters" in SID'10 Dig. Tech. Papers, pp. 1380-1384, 2010-05
  • 72 S. Lee, S. Kim, Y. W. Jeon, D. M. Kim, D. H. Kim, J.-H. Lee, B. D. Ahn, S. Y. Park, J.-H. Park, J. H. Kim and J. Park "Comparison between a-InGaZnO and a-InHfZnO TFTs in Perspective of Subgap Density of States (DOS) in Active Film" in SID'10 Dig. Tech. Papers, pp. 1389-1392, 2010-05
  • 71 Y. W. Jeon, S. Kim, S. Lee, D. M. Kim, D. H. Kim, S. W. Kim, S. I. Kim, J. Park, U-I. Chung, C.-J. Kim, J.-H. Lee, B. D. Ahn, S. Y. Park, J.-H. Park, J. H. Kim and J. Park "Subgap Density of States-Based Amorphous Oxide Thin Film Transistor Simulator (DAOTS) for Process Optimization and Circuit Design" in SID'10 Dig. Tech. Papers, pp. 1385-1388, 2010-05
  • 70 S. Lee, J. Jang, J. Shin, H. Kim, H. Bae, D. Yun, D. H. Kim, and D. M. Kim "A Novel Superlattice Band-Gap Engineered (SBE) Capacitorless DRAM Cell with Extremely Short Channel Length Down to 30 nm" IEEE International Memory Workshop (IMW), 2010-05
  • 69 S. C. Baek, S. W. Park, H. Y. Bae, J. M. Jang, J. E. Lee, S. Y. Lee, H. R. Jang, H. J. Kim, D. Y. Yun, J. S. Shin, D. H. Kim, and D. M. Kim "Accurate Extraction of Gate Capacitances in Leaky MOS Systems using Modified 3-element circuit Model Combining the Multi-Frequency Capacitance-Voltage Method" The 17th Korean Conference on Semiconductors, 2010-02
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