Prof. Choi`s R.P.

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  • 201 Y.AN, Y.LEE, D. M. Kim, D. H. Kim, J.-H. Bae, M.-H. Kang, S.-J. Choi ""Wafer-scale striped network transistors based on purified semiconducting carbon nanotubes for commercialization"" NANOTECHNOLOGY, Vol.34 405202, 2023-07
  • 200 S. J. Myoung, C. I. Ryoo, C. Kim, S.-J. Choi, D. M. Kim, J.-H. Bae, D. H. Kim ""Thermal Process and Dopant Diffusion Model of a-InGaZnO TFTs for VT Prediction Using Lateral Carrier Density Profiling Technique"" IEEE Electron Device Letters, vol. 44, no. 4, pp. 630-633, doi: 10.1109/LED, 2023-04
  • 199 D. Kim, H. J. Lee, T J Yang, W. S. Choi, C. Kim, S.-J. Choi, J.-H. Bae, D. M. Kim, S. Kim, D. H. Kim "Compact SPICE Model of Memristor with Barrier Modulated Considering Short- and Long-Term Memory Characteristics by IGZO Oxygen Content" MDPI: Micromachines , 1630. https://doi.org/10.3390/mi13101630, 2022-09
  • 198 J. Park, S. Choi, C. Kim, H. J. Shin, Y. S. Jeong, J. U. Bae, C. H. Oh, S. Oh, D. H. Kim "Current Boosting of Self-Aligned Top-Gate Amorphous InGaZnO Thin-Film Transistors under Driving Conditions" Advanced Electronic Materials , DOI: 10.1002/aelm.202201109, 2023-01, 2023-01
  • 197 M. Park, H. Lee, G. Lee, S. C. Jang, Y. H. Chang, H. Hong, K.-B. Chung, K. J. Lee, D. H. Kim, H.-S. Kim "Organic/Inorganic Hybrid Top-Gate Transistors with Ultrahigh Electron Mobility via Enhanced Electron Pathways" ACS Applied Materials & Interfaces, DOI: 10.1021/acsami.2c16881, 2022-12, 2022-12
  • 196 T. J. Yang, J.-H. Kim, J. R. Cho, H. J. Lee, K. Kim, J. Park, S.-J Choi, J.-H. Bae, D. M. Kim, C. Kim, D.-W. Park, D. H. Kim "Physical model of a local threshold voltage shift in InGaZnO thin-film transistors under current stress for instability-aware circuit design" Current Applied Physics, DOI: 10.1016/j.cap.2022.11.011, 2023-02, 2023-02
  • 195 J. Park, S. Choi, S. J. Myoung, J.-Y Kim, C. Kim, S.-J. Choi, D. M. Kim, J.-H. Bae, D. H. Kim "Spatial degradation profiling technique in self-aligned top-gate a-InGaZnO TFTs under current-flowing stress" IEEE Elctron Device Letters, DOI: 10.1109/LED.2022.3225838, 2023-01
  • 194 S. Lee†, J. Park†, G. W. Yang, C. Kim, S.-J. Choi, D. M. Kim, J.-H. Bae*, D. H. Kim* (†These authors are co-first authors) "Analysis of a-InGaZnO TFT Threshold Voltage Instability and Mobility Boosting by Current Stress at a Cryogenic Temperature" IEEE Elctron Device Letters, DOI: 10.1109/LED.2022.3221537, 2022-
  • 193 D. Kim, H. J. Lee, T. J. Yang, W. S. Choi, C. Kim, S.-J. Choi, J.-H. Bae, D. M. Kim, S. Kim, and D. H. Kim "Effect of Post-Annealing on Barrier Modulations in Pd/IGZO/SiO2/p+ -Si Memristors" Nanomaterials, vol. 12, p. 3582, DOI: 10.3390/nano12203582, 2022-10
  • 192 H. J. Lee, D. Kim, W. S. Choi, C. Kim, S.-J. Choi, J.-H. Bae, D. M. Kim, S. Kim, D. H. Kim "Effect of oxygen flow rate on long-term and short-term Schottky barrier modulations in Pd/IGZO/SiO2/p+-Si memristors " Materials Science in Semiconductor Processing, vol. 153, p. 107183, DOI: 10.1016/j.mssp.2022.107183, 2023-01
  • 191 J. Park, S. Park, J. T. Jang, S.-J. Choi, D. M. Kim, Member, IEEE, J.-H. Bae, H. J. Shin, Y. S. Jeong, J. U. Bae, C. H. Oh, C. Kim, and D. H. Kim, Senior Member, IEEE "Effect of positive bias stress on the back-gate voltage-modulated threshold voltage in double-gate amorphous InGaZnO thin-film transistors" IEEE Elctron Device Letters, DOI 10.1109/LED.2022.3206340, 2022-09
  • 190 T. J. Yang, J. Park, S. Choi, C. Kim, M. Han, J.-H. Bae, S.-J. Choi, D. M. Kim, Member, IEEE, H. J. Sin, Y. S. Jeong, J. U. Bae, C. H. Oh, D.-W. Park, and D. H. Kim, Senior Member, IEEE "Physics-based Compact Model of Current Stress-Induced Threshold Voltage Shift in Top-Gate Self-Aligned Amorphous InGaZnO Thin-Film Transistors" IEEE Elctron Device Letters, DOI: 10.1109/LED.2022.3202992, 2022-09
  • 189 [Published as Supplementary Cover] Y. Lee†, J. Yoon†, J. W. Jeon, H. Lee, J. Ko, J.-H. Bae, D. H. Kim, D. M. Kim, S.-J. Choi* (†These authors are co-first authors) "All-Solution-Processed Carbon Nanotube Floating Gate Memories" ACS Applied Nano Materials, vol. 5, no. 6, pp. 7652-7657, DOI:10.1021/acsanm.2c00851, 2022-04
  • 188 J. W. Jeon†, Y. Lee†, G.-H. Park, D. H. Kim, D. M. Kim, M.-H. Kang*, S.-J. Choi* (†These authors are co-first authors & *co-corresponding authors) "Cost-effective method for fabricating carbon nanotube network transistors by reusing a 99% semiconducting carbon nanotube solution" Nanotechnology, vol. 33, no. 24, p. 24LT01, DOI:10.1088/1361-6528/ac5bb8, 2022-03
  • 187 G. W. Yang†, J. Park†, S. Choi , C. Kim, D. M. Kim, S. -J. Choi, J. -H. Bae, H. Cho, D. H. Kim*(†These authors are co-first authors.)(*Corresponding author) "Total Subgap Range Density of States-Based Analysis of the Effect of Oxygen Flow Rate on the Bias Stress Instabilities in a-IGZO TFTs" IEEE Transactions on Electron Devices., DOI: 10.1109/TED.2021.3130219, 2021-12
  • 186 H. B. Yoo, H. Kim, J. H. Ryu, J. Park, J.-H. Bae, S.-J. Choi, D. H. Kim, and D. M. Kim "Modeling and Characterization of Photovoltaic and Photoconductive Effects in Insulated-Gate Field Effect Transistors under Optical Exciation" Solid-State Electronics, vol. 186, p. 108139, DOI: 10.1016/j.sse.2021.108139, 2021-06
  • 185 S. Kim†, M.-S. Kim†, Y. Lee, H.-D. Kim, Y.-K. Choi, and S.-J. Choi* "Low-power true random number generator based on randomly distributed carbon nanotube networks" IEEE Access, vol. 9, pp. 91341-91346, doi:10.1109/ACCESS.2021.3091491, 2021-06
  • 184 H. Kim, H. B. Yoo, J. H. Ryu, J.-H. Bae, S.-J. Choi, D. H. Kim and D. M. Kim "Current-to-Transconductance Ratio Technique for Simultaneous Extraction of Threshold Voltage and Parasitic Resistances in MOSFETs" Solid-State Electronics, Vol. 183, p.108133, DOI: 10.1016/j.sse.2021.108133, 2021-06
  • 183 D. Kim, J. T. Jang, D. M. Kim, S.-J. Choi, S. Ban, M. Shin, H. Lee, H. D. Lee, H.-S. Mo, D. H. Kim*(*Corresponding author) "A physics-based compact model for phase-change memory considering the ratio of vertical-to-lateral crystal growth rate for the design of cross-point storage-class memory" Solid-State Electronics, Vol. 186, p. 107955, DOI: 10.1016/j.sse.2020.107955, 2021-01
  • 182 D. Kang, J. T. Jang, S. Park, M. H. R. A, J. -H. Bae, S. -J. Choi, D. M. Kim, C. Kim, S. Cho*, and D. H. Kim*(*Corresponding author) "Threshold-Variation-Tolerant Coupling-Gate α-IGZO Synaptic Transistor for More Reliably Controllable Hardware Neuromorphic System" IEEE Access, vol. 9, pp. 59345-59352, doi: 10.1109/ACCESS.2021.3072688, 2021-04, 2021-04
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