23K. Lee, Y. Kim, H. Lee, S. Park, Y. Lee, M.-K. Joo, H. Ji, J. Lee, J. Chun, M. Sung, Y.-H. Cho, D. Kim, J. Choi, J. W. Lee, D.-Y. Jeon*, S.-J. Choi*, and G.-T. Kim* (*co-corresponding authors)"Defect spectroscopy of sidewall interfaces in gate-all-around silicon nanosheet FET"Nanotechnology, vol. 32, p. 165202, DOI: 10.1088/1361-6528/abd278, 2020-12
22Y. Lee†, J. Yoon†, Y. Kim†, D. M. Kim, D. H. Kim, and S.-J. Choi* (†These authors equally contributed to this work)"Humidity effects according to the type of carbon nanotubes"IEEE Access, vol. 9, pp. 6810-6816, DOI:10.1109/ACCESS.2020.3048173, 2020-12
21S. Kim, Y. Lee, H.-D. Kim, and S.-J. Choi*"A tactile sensor system with sensory neurons and a perceptual synaptic network based on semivolatile carbon nanotube transistors"NPG Asia Mater., vol. 12, no. 76, pp. 1-8, DOI: 10.1038/s41427-020-00258-9, 2020-12
20J.-H. Ahn†, B. Choi†, and S.-J. Choi* (†These authors equally contributed to this work)"Understanding the signal amplification in dual-gate FET-based biosensors"J. Appl. Phys., vol. 128, p. 184502, DOI: 10.1063/5.0010136, 2020-11
19J. T. Jang†, J. Min†, Y. Hwang, S.-J. Choi, D. M. Kim, H. Kim*, and D. H. Kim* (†These authors equally contributed to this work & *co-corresponding authors)"Digital and Analog Switching Characteristics of InGaZnO Memristor Depending on Top Electrode Material for Neuromorphic System"IEEE Access, vol. 8, pp. 192304-192311, doi: 10.1109/ACCESS.2020.3032188, 2020-10
18H. B. Yoo1, J. Yu1, H. Kim, J. H. Ryu, S.-J. Choi, D. H. Kim, and D. M. Kim* (1 Contributed equally to this work.)(*Corresponding author.)"Deep Depletion Capacitance-Voltage Technique For Spatial Distribution of Traps Across the Substrate in MOS Structures"Solid-State Electronics, vol. 173, p.107905. doi:10.1016/j.sse.2020.107905, 2020-10
17S. Choi†, I. Chae†, J. Park, Y. Seo, C. I. Ryoo, D. M. Kim, S.-J. Choi, D.-W. Park*, and D. H. Kim* (†These authors equally contributed to this work & *co-corresponding authors)"Extraction Technique for Flat Band Voltage Using Multi-Frequency C-V Characteristics in Amorphous InGaZnO Thin-Film-Transistors"IEEE Electron Device Lett., vol. 41, no. 12, pp. 1778-1781, Dec. 2020, doi: 10.1109/LED.2020.3032442., 2020-12
16H. Kim, H. B. Yoo, J.-T. Yu, J. H. Ryu, S.-J. Choi , D. H. Kim, and D. M. Kim"Alternating Current-Based Technique for Separate Extraction of Parasitic Resistances in MISFETs With or Without the Body Contact"IEEE Electron Device Lett., vol. 41, no. 10, pp. 1528-1531, doi: 10.1109/LED.2020.3020405., 2020-10
15J. T. Jang, D. Kim, W. S. Choi, S.-J. Choi, D. M. Kim, Y. Kim*, and D. H. Kim* (*co-corresponding authors)"One Transistor-Two Memristor Based on Amorphous Indium-Gallium-Zinc-Oxide for Neuromorphic Synaptic Devices"ACS Appl. Electron. Mater., vol. 2, no. 9, pp. 2837-2844, doi : 10.1021/acsaelm.0c00499, 2020-09
14J. T. Jang, H.-D. Kim, D. M. Kim, S.-J. Choi, H.-S. Kim*, and D. H. Kim* (*co-corresponding authors)"Effect of Anion Composition on the Bias Stress Stability in Zn–O–N Thin-Film Transistors"IEEE Electron Device Lett., vol. 41, no. 9, pp. 1376-1379, doi: 10.1109/LED.2020.3012465., 2020-08
13Y. Lee, J. Yoon, H.-J. Kim, G.-H. Park, J. W. Jeon, D. H. Kim, D. M. Kim, M.-H. Kang*, and S.-J. Choi* (*co-corresponding authors)"Wafer-Scale Carbon Nanotube Network Transistors"Nanotechnology, vol. 31, no. 46, p. 465303, DOI: 10.1088/1361-6528/abac31, 2020-08
12D. Kim†, J. T. Jang†, E. Yu, J. Park, J. Min, D. M. Kim, S.-J. Choi, H.-S. Mo, S. Cho*, K. Roy, D. H. Kim* (†These authors equally contributed to this work & *co-corresponding authors)"Pd/IGZO/p+-Si Synaptic Device with Self-Graded Oxygen Concentrations for Highly Linear Weight Adjustability and Improved Energy Efficiency"ACS Appl. Electron. Mater., vol. 2, no. 8, pp. 2390-2397, doi : 10.1021/acsaelm.0c00341, 2020-07
11S. Kim, Y. Lee, H.-D. Kim, and S.-J. Choi*"16-bit Fixed-Point Number Multiplication with CNT Transistor Dot-Product Engine"IEEE Access, vol. 8, pp. 133597 - 133604, DOI: 10.1109/ACCESS.2020.3009637, 2020-07
10H. B. Yoo, S. K. Kim, J. Kim, J. Yu, S.-J. Choi, D. H. Kim, D. M. Kim"Characterization of Subgap Density-of-States by Sub-Bandgap Optical Charge Pumping in In0.53Ga0.47As Metal-Oxide-Semiconductor Field-Effect Transistors" Journal of Nanoscience and Nanotechnology, vol. 20, no. 7, pp. 4287-4291(5), doi :10.1166/jnn.2020.17785, 2020-07
9J. Park†, Y. Lee†, B. Choi, J. Yoon, Y. Kim, H.-J. Kim, M.-H. Kang, D. H. Kim, D. M. Kim, and S.-J. Choi* (†These authors equally contributed to this work)"Directly drawn top-gate semiconducting carbon nanotube thin-film transistors and complementary inverters"Nanotechnology, vol. 31, no. 32, p. 32LT01, DOI:10.1088/1361-6528/ab8c06, 2020-05
8J. T. Jang†, G. Ahn†, S.-J. Choi, D. M. Kim, H. Kim*, and D. H. Kim* (†These authors equally contributed to this work & *co-corresponding authors)"LRS retention fail based on joule heating effect in InGaZnO resistive-switching random access memory"Appl. Phys. Express, vol. 13, no. 5, p. 054004, doi: 10.35848/1882-0786/ab88c1, 2020-04
7J. T. Jang, H.-D. Kim, D. M. Kim, S.-J. Choi, H.-S. Kim*, and D. H. Kim* (*co-correspoing authors)"Influence of Nitrogen Content on Persistent Photoconductivity in Zinc Oxynitride Thin Film Transistors"IEEE Electron Device Letters, vol. 41, no. 4, pp. 561-564, Apr. 2020, doi: 10.1109/LED.2020.2974757, 2020-04
6J. T. Jang, J. Min, D. Kim, J. Park, S.-J. Choi, D. M. Kim, S. Cho*, and D. H. Kim* (*co-corresponding authors)" A highly reliable physics-based SPICE compact model of IGZO memristor considering the dependence on electrode metals and deposition sequence"Solid-State Electronics, vol. 166 p. 107764, DOI: 10.1016/j.sse.2020.107764, 2020-04
5S. Choi, H.-S. Mo, J. Kim, S. Kim, S. M. Lee, S.-J. Choi, D. M. Kim, D.-W. Park,* and D. H. Kim*(*co-corresponding authors)"Experimental Extraction of Stern-Layer Capacitance in Biosensor Detection Using Silicon Nanowire Field-Effect Transistors"Current Applied Physics, vol. 20, no. 6, pp. 828-833, DOI: 10.1016/j.cap.2020.02.021, 2020-02
4Y. Lee, J. Yoon, J. T. Jang, B. Choi, H.-J. Kim, G.-H. Park, D. M. Kim, D. H. Kim, M.-H.Kang*, and S.-J. Choi* (*co-corresponding authors)"Hybrid integration of carbon nanotube and amorphous IGZO thin-film transistors"AIP Advances, vol. 10, no. 2, p. 025131, DOI: 10.1063/1.5139085, 2020-02