Prof. Choi`s R.P.
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- 23 "Density-of-States Based Modeling of Oxide Thin-Film Transistors: Toward Instability-Aware Design" AWAD 2013, p.67, (Invited talk), 2013-06
- 22 "Highly Endurable Floating Body Cell Memory: Vertical Biristor" IEEE International Electron Device Meeting (IEDM), 2012-12
- 21 "CMOS-Based Biosensors with an Independent Double‐Gate FinFET" IEEE International Electron Device Meeting (IEDM), 2011-12
- 20 "Multi‐Functional Universal Device using a Band‐Engineered Vertical Structure" IEEE International Electron Device Meeting (IEDM), 2011-12
- 19 "Terahertz Time Domain Spectroscopy of Vertical Silicon Nanowires" 36th International Conference on Infrared, Millimeter, and Terahertz Waves, 2011-10
- 18 "Scaling of the Pull‐In Voltage in a Novel CMOS‐compatible NEMS Switch" Solid State Devices and Materials (SSDM), 2011-09
- 17 "Optical‐Charge Pumping: A Universal Trap Characterization Technique for Nanoscale Floating Body Devices" Symposium on VLSI Technology Digest of Technical Papers (VLSI), pp. 190‐191, 2011-06
- 16 "A Novel Junctionless All‐Around‐Gate SONOS Device with a Quantum Nanowire on a Bulk Substrate for 3D Stack NAND Flash Memory" Symposium on VLSI Technology Digest of Technical Papers (VLSI), pp. 74‐75, 2011-06
- 15 "Ultimately Scaled 20nm Unified‐RAM" IEEE International Electron Device Meeting (IEDM), 12.2, pp. 284‐287, 2010-12
- 14 "A Novel Floating Body Cell Memory with Laterally Engineered Bandgap using Si‐Si:C Heterostructure" IEEE International Electron Device Meeting IEDM), 22.4, pp. 532‐555, 2010-12
- 13 "A Novel TFT with a Laterally Engineered Bandgap for 3D Logic and Flash Memory" Symposium on VLSI Technology Digest of Technical Papers (VLSI), pp. 111‐112, 2010-06
- 12 "Metal source/drain technology for nanoscale MOSFET & high speed flash applications" Semicon Korea 2010, 2010-02
- 11 "A Study of a BJT based capacitorless 1T‐DRAM with Consideration of Geometrical Dependence" Proceedings of the 17th Korean Conference on Semiconductors, pp. 7‐8, Daegu, 2010-02
- 10 "High speed Flash Memory by a Dopant‐Segregated Schottky‐Barrier MOSFET" 2009 Bulletin of the Korean Physical Society, pp. 191, 2009-10
- 9 "Performance Breakthrough in NOR Flash Memory with Dopant‐Segregated Schottky‐Barrier (DSSB) SONOS Devices" Symposium on VLSI Technology Digest of Technical Papers (VLSI), pp. 222‐223, 2009-06
- 8 "Gate‐All‐Around Silicon Nanowire MOSFETs on Bulk Substrate" Proceedings of the 16th Korean Conference on Semiconductors, 2009-02
- 7 "A Novel Capacitorless DRAM Operated by Gate‐Induced Drain‐Leakage (GIDL) for Improved Sensing Window and Low Power Operation" Proceedings of the 16th Korean Conference on Semiconductors, pp. 62-63, 2009-02
- 6 "High Speed Flash Memory and 1T‐DRAM on Dopant Segregated Schottky Barrier (DSSB) FinFET SONOS for Multi‐functional SoC applications" IEEE International Electron Device Meeting (IEDM), 6.5, pp. 223‐226, 2008-12
- 5 "Energy Band Engineered Unified‐RAM (URAM) for Multi‐Functioning 1T‐DRAM and NVM" IEEE International Electron Device Meeting (IEDM), 6.6, pp. 227‐230, 2008-12
- 4 "Current Flow Mechanism in Schottky‐Barrier MOSFETs and Application to the 1T‐DRAM" Solid State Devices and Materials (SSDM), pp. 226‐227, 2008-09
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