Journal papers

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  • 25 J. H. Kim, S.-W. Kim, D. Q. A. Nguyen, H. Li, S. B. Kim, Y.-G. Seo, J.-K. Yang, I.-Y. Chung, D. H. Kim, and C.-J Kim "Production of β-carotene by Recombinant Escherichia coli with Engineered Whole Mevalonate Pathway in Batch and Fed-batch Cultures" Biotechnol. Bioprocess Eng., vol. 14 , pp. 559-564, 2009-07
  • 24 J. Jang, C. Choi, J.-S. Lee, K.-S. Min, J.-G. Lee, D. M. Kim, and D. H. Kim "Design of gate stacks for improved program/erase speed, retention and process margin aiming next generation metal nanocrystal memories" Semicond. Sci. Technol., vol. 24 , pp. 115009, 2009-10
  • 23 J. Lee, C. Choi, S. Park, I.-Y. Chung, C.-J. Kim, B.-G. Park, D. M. Kim, and D. H. Kim "Ultra-energy-efficient analog-to-digital converters based on single-electron transistor/CMOS hybrid technology for biomedical applications" Semicond. Sci. Technol., vol. 24 , pp. 115007, 2009-10
  • 22 J.-H. Park, S. Lee, K. Jeon, S. Kim, S. Kim, J. Park, I. Song, C. J. Kim, Y. Park, D. M. Kim, and D. H. Kim "Density of States-Based DC I-V Model of Amorphous Gallium-Indium-Zinc-Oxide Thin-Film Transistors" IEEE Electron Device Letters., vol. 30, no. 10, pp. 1069-1071, 2009-10
  • 21 S. Lee, K. Jeon, J.-H. Park, S. Kim, D. Kong, D. M. Kim, D. H. Kim, S. Kim, S. Kim, J. Hur, J. C. Park, I. Song, C. J. Kim, Y. Park, and U.-I. Jung "Electrical stress-induced instability of amorphous indium-gallium-zinc oxide thin-film transistors under bipolar ac stress" Appl. Phys. Lett., vol. 95, pp. 132101-1-132101-3, 2009-09
  • 20 K.-S. Roh, S. Park, D. H. Kim, and D. M. Kim "Lateral Trapped-Charge Profiling Based on the Extraction of the Flat Band Voltage by using the Optical Substrate Current in Nitride-Based Charge-Trap Flash Memories" IEEE Transactions on Electron Devices, vol. 56, no. 9, pp. 2034-2044, 2009-09
  • 19 J. M. Kim, Y. J. Seo, H.-M. An, T. G. Kim, S. W. Park and D. H. Kim "Investigation of Simulated and Measured Program Characteristics in 4-bit/cell Charge-trap Flash (CTF) Memories" Journal of Korean Physical Society., vol. 55, no. 1, pp. 367-371, 2009-07
  • 18 Y.-J. Kwon, J.-H. Bong, D. H. Kim, and K.-S. Min "Sub-1-VOutput CMOS bandgap reference circuit with small area and low power consumption" IEICE Electronics Express., vol. 6 , no. 3, pp. 161-166, 2009-02
  • 17 C. Choi, J. Lee, S. Park, I.-Y. Chung, C.-J. Kim, B.-G. Park, D. M. Kim,and D. H. Kim "Comparative study on the energy efficiency of logic gates based onsingle-electron transistor technology" Semicond. Sci. Technol., vol. 24, no. 6, pp. 065007, 2009-05
  • 16 D. S. Lee, S. Kang, K.-C. Kang, J.-E. Lee, J. H. Lee, K.-J. Song, D. M. Kim, J. D. Lee and B.-G. Park "Fabrication and Characteristics of Self-Aligned Dual-Gate Single-Electron Transistors" IEEE Trans. Nanotechnology, vol. 8, no. 4, pp. 492-497, 2009-07
  • 15 S. R. Park, K. Y. Kim, C. Choi, K.-J. Song, J.-H. Park, K. Jeon, S. Lee, T. Y. Kim, J. E. Lee, S, Lee, S. Park, J. Jang, D. M. Kim and D. H. Kim "Comparative Study on Program/Erase Efficiency and Retention Properties of 3-D SONOS Flash Memory Cell Array Transistors : Structural Approach from Double-Gate FET and FinFET to Gate-All-Around FET" Journal of Korean Physical Society, vol. 54, no. 5, pp. 1854-1861, 2009-05
  • 14 K. Jeon, S. Lee, J.-H. Park ,C. Choi, K.-J. Song, S. R. Park, T. Y. Kim, J. E. Lee, S. Park, S. Lee, J. Jang, D. H. Kim, and D. M. Kim "Optical Charge Pumping Method for Extracting the Energy Level of Interface States in Program/Erase Cycled SONOS Flash Memory Cell and Its Program Time Dependence" Journal of Korean Physical Society, vol. 54, no 5, pp. 1862-1867, 2009-05
  • 13 K. S. Roh, S. Park, K.-J. Song, J.-H. Park, S. Lee, C. Choi, K. Jeon, S. R. Park, T. Y. Kim, J. E. Lee, S. Lee, J. Jang, D. H. Kim, and D. M. Kim "Lateral Trapped Charge Profiling Based on the Extraction of Flat Band Voltage by using the Optical Substrate Current in Charge Trapping Flash Memory Cells" Journal of Korean Physical Society, vol. 54, no. 5, pp. 1848-1853, 2009-05
  • 12 S.‐J. Choi, J.‐W. Han, C.‐J. Kim, S. Kim, and Y.‐K. Choi "Improvement of the Sensing Window on a Capacitorless 1T‐DRAM of a FinFET‐Based Unified RAM" IEEE Transactions on Electron Devices, vol. 56 no. 12 pp. 3228–3231, 2009-12
  • 11 S. Kim, S.‐J. Choi, and Y.‐K. Choi "Resistive‐Memory Embedded Unified RAM (R‐URAM)" IEEE Transactions on Electron Devices, vol. 56 no. 11 pp. 2670–2674, 2009-11
  • 10 S.‐J. Choi, J.‐W. Han, M. Jang, and Y.‐K. Choi "Analysis of Trapped Charges in Dopant‐Segregated Schottky Barrier‐Embedded FinFET SONOS Devices" IEEE Electron Device Letters, vol. 30 no. 10 pp. 1084–1086, 2009-10
  • 9 S.‐J. Choi, J.‐W. Han, M. Jang, C.‐J. Choi, and Y.‐K. Choi "Characterization of current injection mechanism in Schottky‐barrier metal‐oxide‐semiconductor field‐effect transistors" Applied Physics Letters, vol. 95 pp. 083502, 2009-08
  • 8 S. Kim, S.‐J. Choi, M. Jang, and Y.‐K. Choi "Investigation of the source‐side injection characteristic of a dopant‐segregated Schottky barrier metal‐oxide‐semiconductor field‐effect‐transistor" Applied Physics Letters, vol. 95 no. 6 pp. 063508, 2009-08
  • 7 J.‐W. Han, S.‐W. Ryu, D.‐H. Kim, C.‐J. Kim, S. Kim, D.‐I. Moon, S.‐J. Choi, and Y.‐K. Choi "Fully Depleted Polysilicon TFTs for Capacitorless 1T‐DRAM" IEEE Electron Device Letters, vol. 30 no. 7 pp. 742–744, 2009-07
  • 6 J.‐W. Han, C.‐J. Kim, S.‐J. Choi, D.‐H. Kim, D.‐I. Moon, and Y.‐K. Choi "Gate‐to‐Source/Drain Nonoverlap Device for Soft‐Program Immune Unified RAM (URAM)" IEEE Electron Device Letters, vol. 30 no. 5 pp. 544– 546, 2009-05
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