16J. Lee, J. Yoon, B. Choi, D. Lee, D. M. Kim, D. H. Kim, Y.-K. Choi, S.-J. Choi"Ink-jet printed semiconducting carbon nanotube ambipolar transistors and inverters with chemical doping technique using polyethyleneimine"Applied Physics Letters, vol. 109, no. 26, p. 263103, DOI: 10.1063/1.4973360, 2016-12
15C.-Y. Jeong, H.-J. Kim, D.-H. Kim, H.-S. Kim, T. S. Kim, J.-B. Seon, S. Lee, D. H. Kim, H.-I. Kwon"Investigation of Carrier Transport Mechanism in High Mobility ZnON Thin-Film Transistors"IEEE ELECTRON DEVICE LETTERS, vol. 37, no. 12, pp.1570-1573 DOI: 10.1109/LED.2016.2619684, 2016-12
14D. Lee, B.-H. Lee, J. Yoon, D.-C. Ahn, J.-Y.Park, J. Hur, M.-S. Kim, S.-B. Jeon, M.-H. Kang, K. Kim, M. Lim, Y.-K. Choi*, S.-J. Choi* (*co-corresponding authors)"Three-dimensional Fin-structured Semiconducting Carbon Nanotube Network Transistor"ACS nano, vol. 10, no. 12, pp. 10894-10900, DOI: 10.1021/acsnano.6b05429, 2016-11
13S. Kim, D. W. Kwon, R. Lee, D. H. Kim, B.-G. Park"Investigation of drift effect on silicon nanowire field effect transistor based pH sensor"Japanese Journal of Applied Physics, vol. 55, no. 6S1, DOI: 10.7567/JJAP.55.06GG01, 2016-04
12C.-Y. Jeong, H.-J. Kim, D.-H. Kim, H.-S. Kim, E. S. Kim, T. S. Kim, J. S. Park, J.-B. Seon, K. S. Son, S. Lee, S.-H. Cho, Y. S. Park, D. H. Kim, H.-I. Kwon"Investigation of Low-Frequency Noise Properties in High-Mobility ZnON Thin-Film Transistors"IEEE Electron Device Letters, vol. 37, no. 6, pp. 739-742, DOI: 10.1109/LED.2016.2558204, 2016-06
11J. Kim§, H. Lee§, S. K. Kim, J. Kim, J. Park, S.-J. Choi, D. H. Kim, D. M. Kim ( §These authors equally contributed to this work)"Hybrid Open Drain Method and Fully Current- Based Characterization of Asymmetric Resistance Components in a Single MOSFET"IEEE Transactions on Electron Devices, Vol. 63, no. 11, pp. 4196-4200, DOI: 10.1109/TED.2016.2607721, 2016-09
10J. Yoon§, J. Lee§, B. Choi§, D. Lee, D. H. Kim, D. M. Kim, D.-I. Moon, M. Lim, S. Kim, S.-J. Choi ( §These authors equally contributed to this work)"Flammable carbon nanotube transistors on a nitrocellulose paper substrate for transient electronics"Nano Research, DOI: 10.1007/s12274-016-1268-6, 2016-09
9K. M. Lee, J. T. Jang, Y.-J. Baek, H. Kang, S. Choi, S.-J. Choi, D. M. Kim, C. J. Kang, T.-S. Yoon, H.-S. Mo, D. H. Kim"The γ -Fe2O3 Nanoparticle Assembly-Based Memristor Ratioed Logic and Its Optical Tuning"IEEE Electron Device Letters, Vol. 37, no. 8, pp. 986-989, DOI: 10.1109/LED.2016.2582523 , 2016-08
8H. M. Choi, D. J. Shin, J. H. Lee, H.-S. Mo, T. J. Park, B.-G. Park, D. M. Kim, S.-J. Choi, D. H. Kim, J. Park"The Analysis of Characteristics in Dry and Wet Environments of Silicon Nanowire-Biosensor"Journal of Nanoscience and Nanotechnology, vol. 16, no. 5, pp. 4901–4905, DOI: 10.1166/jnn.2016.12247 , 2016-05
7J. Yoon, B. Choi, S. Choi, J. Lee, J. Lee, M. Jeon, Y. Lee, J. Han, J. Lee, D. M. Kim, D. H. Kim, S. Kim, S.-J. Choi"Evaluation of interface trap densities and quantum capacitance in carbon nanotube network thin-film transistors"Nanotechnology, vol. 27, no. 29, p. 295704, DOI: 10.1088/0957-4484/27/29/295704, 2016-06
6D. Kwon, J. H. Lee, S. Kim, R. Lee, H. Mo, J. Park, D. H. Kim, B.-G. Park"Drift-Free pH Detection With Silicon Nanowire Field-Effect Transistors"IEEE Electron Device Letters, vol. 37, no. 5, pp. 652-655, DOI: 10.1109/LED.2016.2542846, 2016-05
5S. K. Kim, J. Lee, D.-M. Geum, M.-S. Park, W. J. Choi, S.-J. Choi, D. H. Kim, S. Kim*, D. M. Kim* (*co-corresponding authors)"Fully subthreshold current-based characterization of interface traps and surface potential in III–V-on-insulator MOSFETs"Solid-State Electronics, vol. 122, pp. 8-12, DOI: 10.1016/j.sse.2016.04.011, 2016-04
3D. Lee, J. Yoon, J. Lee, B.-H. Lee, M.-L. Seol, H. Bae, S. B. Jeon, H. Seong, S. G. Im, S.-J. Choi*, Y.-K. Choi* (*co-corresponding authors)"Logic circuits composed of flexible carbon nanotube thin-film transistor and ultra-thin polymer gate dielectric"Scientific Reports, Scientific reports 6, DOI: 10.1038/srep26121, 2016-05
2J. H. Bae, and J.-H. Lee"Dual-gate p-GaN gate high electron mobility transistors for steep subthreshold slope"Journal of Nanoscience and Nanotechnology, vol. 16, no. 5, pp. 4919-4923, doi: 10.1166/jnn.2016.12258, 2016-05
1S. Kim, H.-D. Kim, S.-J. Choi* (*corresponding author)"Intrinsic threshold switching responses in AsTeSi thin film"Journal of Alloys and Compounds, vol. 667, pp. 91–95, DOI: 10.1016/j.jallcom.2016.01.146, 2016-01