Journal papers
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- 124 "Comparative study of solution‐processed carbon nanotube network transistors" Applied Physics Letters, vol. 101 no. 11 pp. 112-104, 2012-11
- 123 "Characterization and modeling of temperature-dependent barrier heights and ideality factors in GaAs Schottky diodes" Solid-State Electronics, vol. 51, pp. 865-869, 2007-01
- 122 "Design of a robust analog-to-digital converter based on complementary SET/CMOS hybrid amplifier" IEEE Trans. Nanotechnology, vol. 6, no. 6, 2007-11
- 121 "Self‐aligned nanoforest in silicon nanowire for sensitive conductance modulation." Nano letters, vol. 12 no. 11 pp. 5603–5608, 2012-10
- 120 "Optical capacitance-voltage characterization of charge traps in the trapping nitride layer of charge trapped flash memory devices" Appl. Phys. Lett., vol. 91, ,pp. 223511, 2007-11
- 119 "Addressable Nanowire Field‐Effect‐Transistor Biosensors With Local Backgates" IEEE Transactions on Electron Devices, vol. 59 no. 9 pp. 2507–2511, 2012-09
- 118 "A transistor‐based biosensor for the extraction of physical properties from biomolecules" Applied Physics Letters, vol. 101 no. 7 pp. 073703, 2012-08
- 117 "Optical charge pumping technique for extracting interface states of nano-scale SONOS flash memories" J. of the Korean Phys. Soc., vol. 51, no. 6, pp. 2063-2068, 2007-12
- 116 "Coupled parallel quantum dots in silicon-on-insulator metal-oxide-semiconductor field-effect transistors" Physica E, vol. 33, pp. 273-279, 2006-03
- 115 "Hybrid porphyrin‐silicon nanowire field‐effect transistor by opto‐electrical excitation" ACS nano, vol. 6 no. 9 pp. 7885–7892, 2012-08
- 114 "Investigation of gate length and fringing field effects for program and erase efficiency in gate-all-around SONOS memory cells" Solid‐State Electronics, vol. 79 pp. 7–10, 2012-07
- 113 "Sub-bandgap Optical GIDL Current Method for Extracting the Interface States in the Gate-to-Drain Overlapped Region of MOSFETs" J. of the Korean Phys. Soc., vol. 49, no. 4, pp. 1565-1570, 2006-10
- 112 "Sub-Bandgap Photonic Base Current Method for Extracting the Trap Density at Heterointerfaces in Heterojunction Bipolar Transistors" J. of the Korean Phys. Soc., vol. 49, no. 4, pp. 1558-1564, 2006-10
- 111 "Physical Observation of a Thermo‐Morphic Transition in a Silicon Nanowire" ACS nano, vol. 6 no. 3 pp. 2378–2384, 2012-06
- 110 "Porphyrin‐Silicon Hybrid Field Effect Transistor with Individually Addressable Top‐gate Structure" ACS nano, vol. 6 no. 1 pp. 183–189, 2012-06
- 109 "Extraction of source and drain resistances in MOSFETs using parasitic bipolar junction transistor" Electronics Lett., vol. 41, no. 13, pp. 772-774, 2005-06
- 108 "Terahertz time‐domain spectroscopy of anisotropic complex conductivity tensors in silicon nanowire films" Applied Physics Letters, vol. 100 no. 21 pp. 211102, 2012-05
- 107 "Modeling of the Substrate Current and Characterization of Traps in MOSFETs under Sub-Bandgap Photonic Excitation" J. of the Korean Phys. Soc., vol. 45, no. 5, pp. 1283-1287, 2004-11
- 106 "A Compact Model of Quantum Electron Density at the Subthreshold Region for Double‐Gate Junctionless Transistors" IEEE Transactions on Electron Devices, vol. 59 no. 4 pp. 1008–1012, 2012-04
- 105 "Transport Spectroscopy of A Quantum Dot in a Silicon-on-Insulator (SOI) MOSFET" Journal of Korean Physical Society, vol. 50, no. 3, pp. 885-888, 2007-03
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