Journal papers
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- 63 "Sensitivity of Threshold Voltage to Nanowire Width Variation in Junctionless Transistors" IEEE Electron Device Letters, vol. 32 no. 2 pp. 2010–2012, 2011-02
- 62 "Negative-Differential Transconductance Characteristics at Room Temperature in 30-nm Square-Channel SOI nMOSFETs With a Degenerately Doped Body" IEEE Electron Device Letters, vol. 23, no. 10, pp. 612-614, 2002-10
- 61 "Analysis of Transconductance (gm) in Schottky‐ Barrier MOSFETs" IEEE Transactions on Electron Devices, vol. 58 no. 2 pp. 427–432, 2011-02
- 60 "Photoinduced Memory with Hybrid Integration of an Organic Fullerene Derivative and an Inorganic Nanogap‐Embedded Field‐Effect Transistor for Low‐Voltage Operation" Advanced Materials, vol. 23 no. 29 pp. 3326–3331, 2011-01
- 59 "Fabrication of single-electron tunneling transistors with an electrically formed Coulomb island in a silicon-on-insulator nanowire" J. Vac. Sci. Technol. B., vol. 20, issues 4, pp. 1410-1418, 2002-07
- 58 "Direct observation of excited states in double quantum dot silicon single electron transistor" Microelectronic Engineering, vol. 63, issues 1-3, pp. 129-133, 2002-07
- 57 "Interface‐Trap Analysis by an Optically Assisted Charge‐Pumping Technique in a Floating‐Body Device" IEEE Electron Device Letters, vol. 32 no. 1 pp. 84–86, 2011-01
- 56 "Analytical Modeling of a Nanogap‐Embedded FET for Application as a Biosensor" IEEE Transactions on Electron Devices, vol. 57 no. 12 pp. 3477–3484, 2010-12
- 55 "Nanoscale Multi-Line Patterning Using Sidewall Structure" Jpn. J. Appl. Phys., vol. 41, pp. 4410-4414, part 1, no. 6b, 2002-06
- 54 "Optically Assisted Charge Pumping on Floating‐Body FETs" IEEE Electron Device Letters, vol. 31 no. 12 pp. 1365–1367, 2010-12
- 53 "Double-dot-like charge transport through a small size silicon single electron transistor" Physica E, vol. 13, pp. 946-949, 2002-03
- 52 "Dynamic exclusive-OR gate based on gate-induced Si island single electron transistor" IEE Electronics Letters, vol. 38, no. 11, pp. 527~529, 2002-05
- 51 "Dopant‐Segregated Schottky Source/Drain FinFET with a NiSi FUSI Gate and Reduced Leakage Current" IEEE Transactions on Electron Devices, vol. 57 no. 11 pp. 2902–2906, 2010-11
- 50 "Double‐Gate Nanowire Field Effect Transistor for a Biosensor" Nano letters, vol. 10 no. 8 pp. 2934–2938, 2010-10
- 49 "Single-Electron MOS Memory with a Defined Quantum Dot Based on Conventional VLSI Technology" Jpn. J. Appl. Phys., vol. 41, part 1, no. 4b, pp. 2606-2610, 2002-04
- 48 "Fin‐Width Dependence of BJT‐Based 1T‐DRAM Implemented on FinFET" IEEE Electron Device Letters, vol. 31 no. 9 pp. 909–911, 2010-09
- 47 "Single-Electron Transistors with Sidewall Depletion Gates on a Silicon-On-Insulator Nano-Wire" Jpn. J. Appl. Phys., vol. 41, part 1, no. 4b, pp. 2574-2577, 2002-04
- 46 "P‐Channel Nonvolatile Flash Memory With a Dopant‐Segregated Schottky‐Barrier Source/Drain" IEEE Transactions on Electron Devices, vol. 57 no. 8 pp. 1737–1742, 2010-08
- 45 "Silicon single-electron transistors with sidewall depletion gates and their application to dynamic single-electron transistor logic" IEEE Transactions on Electron Devices, vol. 49, no. 4, pp. 627-635, 2002-04
- 44 "An Optically Assisted Program Method for Capacitorless 1T‐DRAM" IEEE Electron Device Letters, vol. 57 no. 7 pp. 1714–1718, 2010-07
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