Journal papers
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- 71 "Detection of a Nanoscale Hot Spot by Hot Carriers in a Poly‐Si TFT Using Polydiacetylene‐Based Thermoresponsive Fluorometry" IEEE Transactions on Electron Devices, vol. 58 no. 5 pp. 1570–1574, 2011-05
- 70 "Channel width dependence of hot electron injection program/hot hole erase cycling behavior in silicon-oxide-nitride-oxide-silicon (SONOS) memories" Solid-State Electronics, vol. 52, issue 6, pp. 844-848, 2008-01
- 69 "High performance platinum‐silicided p‐type Schottky barrier metal‐oxide‐semiconductor field‐effect transistors scaled down to 30 nm" Journal of Vacuum Science & Technology B, vol. 29 no. 3 pp. 032211, 2011-05
- 68 "Silicon Nanowire All‐Around Gate MOSFETs Built on a Bulk Substrate by All Plasma‐Etching Routes" IEEE Electron Device Letters, vol. 32 no. 4 pp. 452–454, 2011-04
- 67 "Single-Electron Transistors Based on Gate-Induced Si Island for Single-Electron Logic Application" IEEE Transactions on Nanotechnology, vol. 1, no. 4, pp. 170-175, 2002-12
- 66 "A Polydimethylsiloxane (PDMS) Sponge for the Selective Absorption of Oil from Water" ACS Applied Materials and Interfaces, vol. 3 pp. 4552–4556, 2011-03
- 65 "A Practical SPICE Model Based on the Physics and Characteristics of Realistic Single-Electron Transistors" IEEE Transactions on Nanotechnology, vol. 1, no. 4, pp. 226-232, 2002-12
- 64 "Single-Electron Transistors with Sidewall Depletion Gates on an SOI Nanowire and Their Application to Single-Electron Inverters" Journal of The Korean Physical Society, vol. 41, no. 4, pp. 505-508, 2002-10
- 63 "Sensitivity of Threshold Voltage to Nanowire Width Variation in Junctionless Transistors" IEEE Electron Device Letters, vol. 32 no. 2 pp. 2010–2012, 2011-02
- 62 "Negative-Differential Transconductance Characteristics at Room Temperature in 30-nm Square-Channel SOI nMOSFETs With a Degenerately Doped Body" IEEE Electron Device Letters, vol. 23, no. 10, pp. 612-614, 2002-10
- 61 "Analysis of Transconductance (gm) in Schottky‐ Barrier MOSFETs" IEEE Transactions on Electron Devices, vol. 58 no. 2 pp. 427–432, 2011-02
- 60 "Photoinduced Memory with Hybrid Integration of an Organic Fullerene Derivative and an Inorganic Nanogap‐Embedded Field‐Effect Transistor for Low‐Voltage Operation" Advanced Materials, vol. 23 no. 29 pp. 3326–3331, 2011-01
- 59 "Fabrication of single-electron tunneling transistors with an electrically formed Coulomb island in a silicon-on-insulator nanowire" J. Vac. Sci. Technol. B., vol. 20, issues 4, pp. 1410-1418, 2002-07
- 58 "Direct observation of excited states in double quantum dot silicon single electron transistor" Microelectronic Engineering, vol. 63, issues 1-3, pp. 129-133, 2002-07
- 57 "Interface‐Trap Analysis by an Optically Assisted Charge‐Pumping Technique in a Floating‐Body Device" IEEE Electron Device Letters, vol. 32 no. 1 pp. 84–86, 2011-01
- 56 "Analytical Modeling of a Nanogap‐Embedded FET for Application as a Biosensor" IEEE Transactions on Electron Devices, vol. 57 no. 12 pp. 3477–3484, 2010-12
- 55 "Nanoscale Multi-Line Patterning Using Sidewall Structure" Jpn. J. Appl. Phys., vol. 41, pp. 4410-4414, part 1, no. 6b, 2002-06
- 54 "Optically Assisted Charge Pumping on Floating‐Body FETs" IEEE Electron Device Letters, vol. 31 no. 12 pp. 1365–1367, 2010-12
- 53 "Double-dot-like charge transport through a small size silicon single electron transistor" Physica E, vol. 13, pp. 946-949, 2002-03
- 52 "Dynamic exclusive-OR gate based on gate-induced Si island single electron transistor" IEE Electronics Letters, vol. 38, no. 11, pp. 527~529, 2002-05
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