124S.‐J. Choi, C. Wang, C. Chi Lo, P. Bennett, A. Javey, and J. Bokor"Comparative study of solution‐processed carbon nanotube network transistors"Applied Physics Letters, vol. 101 no. 11 pp. 112-104, 2012-11
123D. M. Kim, D. H. Kim, S. Y. Lee"Characterization and modeling of temperature-dependent barrier heights and ideality factors in GaAs Schottky diodes"Solid-State Electronics, vol. 51, pp. 865-869, 2007-01
122C. H. Lee, S. W. Kim, J. U. Lee, S. H. Seo, G.-C. Kang, K. S. Roh, K. Y. Kim, S. Y. Lee, D. M. Kim, and D. H. Kim"Design of a robust analog-to-digital converter based on complementary SET/CMOS hybrid amplifier"IEEE Trans. Nanotechnology, vol. 6, no. 6, 2007-11
121M.‐L. Seol, J.‐H. Ahn, J.‐M. Choi, S.‐J. Choi, and Y.‐K. Choi"Self‐aligned nanoforest in silicon nanowire for sensitive conductance modulation."Nano letters, vol. 12 no. 11 pp. 5603–5608, 2012-10
120J. U. Lee, K. S. Roh, G. C. Kang, S. H. Seo, K. Y. Kim, S. Lee, K. J. Song, C. M. Choi, S. R. Park, J. H. Park, K. C. Jeon, D. H. Kim, and D. M. Kim"Optical capacitance-voltage characterization of charge traps in the trapping nitride layer of charge trapped flash memory devices"Appl. Phys. Lett., vol. 91, ,pp. 223511, 2007-11
119D. J. Baek, S.‐J. Choi, J.‐H. Ahn, J.‐Y. Kim, and Y.‐K. Choi"Addressable Nanowire Field‐Effect‐Transistor Biosensors With Local Backgates"IEEE Transactions on Electron Devices, vol. 59 no. 9 pp. 2507–2511, 2012-09
118S. Kim, D. Baek, J.‐Y. Kim, S.‐J. Choi, M.‐L. Seol, and Y.‐K. Choi"A transistor‐based biosensor for the extraction of physical properties from biomolecules"Applied Physics Letters, vol. 101 no. 7 pp. 073703, 2012-08
117S. Lee, K.-C. Jeon, J.-U. Lee, S.-W. Kim, S.-H. Seo, K.-S. Roh, G.-C. Kang, K.-Y. Kim, C.-M. Choi, K.-J. Song, S.-R. Park, J.-H. Park, D.-M. Kim, and D.-H. Kim"Optical charge pumping technique for extracting interface states of nano-scale SONOS flash memories"J. of the Korean Phys. Soc., vol. 51, no. 6, pp. 2063-2068, 2007-12
116D. H. Kim"Coupled parallel quantum dots in silicon-on-insulator metal-oxide-semiconductor field-effect transistors"Physica E, vol. 33, pp. 273-279, 2006-03
115M.‐L. Seol, S.‐J. Choi, J.‐M. Choi, J.‐H. Ahn, and Y.‐K. Choi"Hybrid porphyrin‐silicon nanowire field‐effect transistor by opto‐electrical excitation"ACS nano, vol. 6 no. 9 pp. 7885–7892, 2012-08
114M. Kim, S.‐J Choi, D. Moon, J. P. Duarte, S. Kim, and Y. Choi"Investigation of gate length and fringing field effects for program and erase efficiency in gate-all-around SONOS memory cells"Solid‐State Electronics, vol. 79 pp. 7–10, 2012-07
113J. B. Choi, S. H. Seo, J. U. Lee, G. C. Kang, S. W. Kim, K. S. Roh, K. Y. Kim, C. H. Lee, S. Y. Lee, H. T. Kim, D. H. Kim, K. S. Min, D. J. Kim, D. W. Kang, J. K. Rhee, and D. M. Kim"Sub-bandgap Optical GIDL Current Method for Extracting the Interface States in the Gate-to-Drain Overlapped Region of MOSFETs"J. of the Korean Phys. Soc., vol. 49, no. 4, pp. 1565-1570, 2006-10
112S. W. Kim, J. U. Lee, G. C. Kang, K. S. Roh, S. H. Seo, K. Y. Kim, C. H. Lee, S. Y. Lee, H. T. Kim, D. H. Kim, K. S. Min, D. J. Kim, D. W. Kang, J. K Rhee, and D. M. Kim"Sub-Bandgap Photonic Base Current Method for Extracting the Trap Density at Heterointerfaces in Heterojunction Bipolar Transistors"J. of the Korean Phys. Soc., vol. 49, no. 4, pp. 1558-1564, 2006-10
111S.‐J. Choi, D.‐I. Moon, J. P. Duarte, J.‐H. Ahn, and Y.‐K. Choi"Physical Observation of a Thermo‐Morphic Transition in a Silicon Nanowire"ACS nano, vol. 6 no. 3 pp. 2378–2384, 2012-06
110M. Seol, S.‐J. Choi, C. Kim, D.‐I. Moon, and Y.‐K. Choi"Porphyrin‐Silicon Hybrid Field Effect Transistor with Individually Addressable Top‐gate Structure"ACS nano, vol. 6 no. 1 pp. 183–189, 2012-06
109H. T. Kim, I. C. Nam, K. S. Kim, K. H. Kim, J. B. Choi, J. U. Lee, S. W. Kim, G. C. Kang, D. J. Kim, K. S. Min, D. W. Kang, and D. M. Kim"Extraction of source and drain resistances in MOSFETs using parasitic bipolar junction transistor"Electronics Lett., vol. 41, no. 13, pp. 772-774, 2005-06
108M. Lim, S.‐J. Choi, G.‐S. Lee, M. Seol, Y. Do, Y.‐K. Choi, and H. Han"Terahertz time‐domain spectroscopy of anisotropic complex conductivity tensors in silicon nanowire films"Applied Physics Letters, vol. 100 no. 21 pp. 211102, 2012-05
107I. C. Nam, H. T. Kim, K. S. Kim, K. H. Kim, J. B. Choi, J. U. Lee, S. W. Kim, G. C. Kang, D. J. Kim, K. S. Min, D. W. Kang, and D. M. Kim"Modeling of the Substrate Current and Characterization of Traps in MOSFETs under Sub-Bandgap Photonic Excitation"J. of the Korean Phys. Soc., vol. 45, no. 5, pp. 1283-1287, 2004-11
106J. P. Duarte, M.‐S. Kim, S.‐J. Choi, and Y.‐K. Choi"A Compact Model of Quantum Electron Density at the Subthreshold Region for Double‐Gate Junctionless Transistors"IEEE Transactions on Electron Devices, vol. 59 no. 4 pp. 1008–1012, 2012-04
105Y. S. Yu, D. H. Kim, J. D. Lee, B.-G. Park, S. W. Hwang, and D. Ahn"Transport Spectroscopy of A Quantum Dot in a Silicon-on-Insulator (SOI) MOSFET"Journal of Korean Physical Society, vol. 50, no. 3, pp. 885-888, 2007-03