Journal papers
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- 84 "Modeling and Extraction of Gate Bias-Dependent Parasitic Source and Drain Resistances in MOSFET's" Solid-State Electronics, vol. 47, no. 10, pp. 1707-1712, 2003-12
- 83 "An Extraction Method of the Energy Distribution of Interface Traps by an Optically Assisted Charge Pumping Technique" IEEE Transactions on Electron Devices, vol. 58 no. 11 pp. 3667–3673, 2011-11
- 82 "Vertically Integrated Unidirectional Biristor" IEEE Electron Device Letters, vol. 32 no. 11 pp. 1483–1485, 2011-11
- 81 "Deep-Depletion High-Frequency Capacitance-Voltage Responses under Photonic Excitation and Distribution of Interface States in MOS Capacitors" IEEE Trans. Electron Devices, vol. 50, no. 4, pp. 1131-1134, 2003-04
- 80 "Bio‐Inspired Complementary Photoconductor by Porphyrin‐Coated Silicon Nanowires" Advanced Materials, vol. 23 pp. 3979–3983, 2011-07
- 79 "Physical Mechanisms on the Abnormal Gate Leakage Currents in Pseudomorphic High Electron Mobility Transistors" IEEE Trans. Electron Devices, vol. 50, no. 4, pp. 1148-1152, 2003-04
- 78 "Investigation of Size Dependence on Sensitivity for Nanowire FET Biosensors" IEEE Transactions on Nanotechnology, vol. 10 no. 6 pp. 1405–1411, 2011-06
- 77 "Analytic Model for Photo-Response of p-Channel MODFET's" J. of the Korean Phys. Soc., vol. 42, no. supp. issue. 2, pp. s642-s646, 2003-02
- 76 "A Physics-Based Continuous Charge-Sheet MOSFET Model using a Balanced Bulk Charge Sharing Method" J. of the Korean Phys. Soc., vol. 42, no. 2, pp. 214-223, 2003-02
- 75 "Simple Analytical Bulk Current Model for Long‐Channel Double‐Gate Junctionless Transistors" IEEE Electron Device Letters, vol. 32 no. 6 pp. 704–706, 2011-06
- 74 "Nonvolatile Memory by All‐ Around‐Gate Junctionless Transistor Composed of Silicon Nanowire on Bulk Substrate" IEEE Electron Device Letters, vol. 32 no. 5 pp. 602–604, 2011-05
- 73 "Single-electron transistors fabricated with sidewall spacer patterning" Superlattices and Microstructures, vol. 34, pp. 231-239, 2003-09
- 72 "Pattern multiplication method and the uniformity of nanoscale multiple lines" J. Vac. Sci. Technol. B., vol. 21, issues 4, pp. 1491-1495, 2003-07
- 71 "Detection of a Nanoscale Hot Spot by Hot Carriers in a Poly‐Si TFT Using Polydiacetylene‐Based Thermoresponsive Fluorometry" IEEE Transactions on Electron Devices, vol. 58 no. 5 pp. 1570–1574, 2011-05
- 70 "Channel width dependence of hot electron injection program/hot hole erase cycling behavior in silicon-oxide-nitride-oxide-silicon (SONOS) memories" Solid-State Electronics, vol. 52, issue 6, pp. 844-848, 2008-01
- 69 "High performance platinum‐silicided p‐type Schottky barrier metal‐oxide‐semiconductor field‐effect transistors scaled down to 30 nm" Journal of Vacuum Science & Technology B, vol. 29 no. 3 pp. 032211, 2011-05
- 68 "Silicon Nanowire All‐Around Gate MOSFETs Built on a Bulk Substrate by All Plasma‐Etching Routes" IEEE Electron Device Letters, vol. 32 no. 4 pp. 452–454, 2011-04
- 67 "Single-Electron Transistors Based on Gate-Induced Si Island for Single-Electron Logic Application" IEEE Transactions on Nanotechnology, vol. 1, no. 4, pp. 170-175, 2002-12
- 66 "A Polydimethylsiloxane (PDMS) Sponge for the Selective Absorption of Oil from Water" ACS Applied Materials and Interfaces, vol. 3 pp. 4552–4556, 2011-03
- 65 "A Practical SPICE Model Based on the Physics and Characteristics of Realistic Single-Electron Transistors" IEEE Transactions on Nanotechnology, vol. 1, no. 4, pp. 226-232, 2002-12
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