Journal papers
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- 31 "Fin Width (Wfin) Dependence of Programming Characteristics on a Dopant‐Segregated Schottky‐Barrier (DSSB) FinFET SONOS Device for a NOR‐Type Flash Memory Device" IEEE Electron Device Letters, vol. 31 no. 1 pp. 2009–2011, 2010-01
- 30 "An underlap field‐effect transistor for electrical detection of influenza" Applied Physics Letters, vol. 96 no. 3 pp. 033703, 2010-01
- 29 "Single-electron transistor based on silicon-on-insulator quantum wire fabricated by a side-wall patterning method" Appl. Phys. Lett., vol. 79, no. 23, pp. 3812~3814, 2001-12
- 28 "Room Temperature Coulomb Oscillation of a Single Electron Switch with an Ectrically Formed Quantum Dot and Its Modeling" Jpn. J. Appl. Phys., vol. 39, pp. 2329~2333, 2000-04
- 27 "Improvement of the Sensing Window on a Capacitorless 1T‐DRAM of a FinFET‐Based Unified RAM" IEEE Transactions on Electron Devices, vol. 56 no. 12 pp. 3228–3231, 2009-12
- 26 "Resistive‐Memory Embedded Unified RAM (R‐URAM)" IEEE Transactions on Electron Devices, vol. 56 no. 11 pp. 2670–2674, 2009-11
- 25 "High spatial density nanocrystal formation using thin layer of amorphous Si0.7Ge0.3 deposited on SiO2" J. of Applied Physics., vol. 87, no. 5, pp2449~2453, 2000-03
- 24 "Analysis of Trapped Charges in Dopant‐Segregated Schottky Barrier‐Embedded FinFET SONOS Devices" IEEE Electron Device Letters, vol. 30 no. 10 pp. 1084–1086, 2009-10
- 23 "Modeling of Submicron Si-MOSFET's for Microwave Applications with Unique Extraction of Small-Signal Characteristic Parameters" J. of the Korean Phys. Soc., vol. 36, no. 6, pp. 915-922, 2000-12
- 22 "Characterization of current injection mechanism in Schottky‐barrier metal‐oxide‐semiconductor field‐effect transistors" Applied Physics Letters, vol. 95 pp. 083502, 2009-08
- 21 "Additional Resistance Method for Extraction of Separated Nonlinear Parasitic Resistances and Effective Mobility in MOSFETs" Electronics Lett., vol. 36, no. 14, pp. 1233-1234, 2000-07
- 20 "Investigation of the source‐side injection characteristic of a dopant‐segregated Schottky barrier metal‐oxide‐semiconductor field‐effect‐transistor" Applied Physics Letters, vol. 95 no. 6 pp. 063508, 2009-08
- 19 "Comparison of Photoresponsive Drain Conduction and Gate Leakage in N-channel Pseudomorphic HEMT and MESFET under Electro-Optical Stimulations" IEEE Electron Device Lett., vol. 21, no. 6, pp. 264-267, 2000-06
- 18 "Microwave Characteristics of a Pseudomorphic High Electron Mobility Transistor under Electro-Optical Stimulations" IEEE Electron Device Lett., vol. 21, no. 3, pp. 93-96, 2000-03
- 17 "Fully Depleted Polysilicon TFTs for Capacitorless 1T‐DRAM" IEEE Electron Device Letters, vol. 30 no. 7 pp. 742–744, 2009-07
- 16 "Gate‐to‐Source/Drain Nonoverlap Device for Soft‐Program Immune Unified RAM (URAM)" IEEE Electron Device Letters, vol. 30 no. 5 pp. 544– 546, 2009-05
- 15 "Parallel Conduction and Non-Linear Optoelectronic Response of an N-Channel Pseudomorphic High Electron Mobility Transistor" Solid-State Electronics, vol. 43, no. 5, pp. 943-951, 1999-01
- 14 "Energy‐Band‐Engineered Unified‐RAM (URAM) Cell on Buried Si1‐yCy Substrate for Multifunctioning Flash Memory and 1T‐DRAM" IEEE Transactions on Electron Devices, vol. 56 no. 4 pp. 641–647, 2009-04
- 13 "Electrical Characteristics of an Optically Controlled N-Channel AlGaAs/GaAs/InGaAs Pseudomorphic HEMT" IEEE Electron Device Lett., vol. 20, no. 2, pp. 73-76, 1999-02
- 12 "Nanocrystal Memory Cell Using High-Density Si 0.73Ge 0.27 Quantum Dot Array" J. Korean Physical Society, vol. 35, pp. s995~s998, 1999-12
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