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  • 291 D. W. Kwon, S. Kim, R. Lee, Hy.-S. Mo, D. H. Kim,B.-G. Park "Macro modeling of ion sensitive field effect transistor with current drift" Sensors and Actuators B: Chemical, Vol. 249, pp.564-570, DOI:10.1016/j.snb.2017.03.110, 2017-10
  • 290 H. Jung, S. Choi, J. T. Jang, J. Yoon, J. Lee, Y. Lee, J. Rhee, G. Ahn, H. R. Yu, D. M. Kim, S.-J. Choi, D. H. Kim* "Universal model of bias-stress-induced instability in inkjet-printed carbon nanotube networks field-effect transistors" Solid State Electronics, https://doi.org/10.1016/j.sse.2017.10.022, 2017-10
  • 289 J. Rhee, S. Choi, H. Kang, J.-Y. Kim, D. Ko, G. Ahn, H. Jung, S.-J. Choi, D. M. Kim, D. H. Kim* "The electron trap parameter extraction-based investigation of the relationship between charge trapping and activation energy in IGZO TFTs under positive bias temperature stress" Solid State Electronics, http://dx.doi.org/10.1016/j.sse.2017.10.024, 2017-10
  • 288 Y. Lee, J. Yoon, B. Choi, H. Lee, J. Park, M. Jeon, J. Han, J. Lee, Y. Kim, D. H. Kim, D. M. Kim, and S.-J. Choi* "Semiconducting carbon nanotube network thin-film transistors with enhanced inkjet-printed source and drain contact interfaces" Applied Physics Letters, vol. 111, no. 17, pp. 173108-173111, DOI: 10.1063/1.5009656, 2017-10
  • 287 J.-H. Ahn, S.-J Choi, M. Im, S. Kim, C.-H. Kim, J.-Y. Kim, T. J. Park, S. Y. Lee, Y.-K. Choi* "Charge and dielectric effects of biomolecules on electrical characteristics of nanowire FET biosensors" Applied physics Letters, vol. 111, no. 11, p. 3701, DOI: 10.1063/1.5003106, 2017-09
  • 286 S. K. Kim, J.-P. Shim, D.-M. Geum, C. Z. Kim, H.-S. Kim, J. D. Song, S.-J. Choi, D. H. Kim, W. J. Choi, H.-J. Kim, D. M. Kim, and S. Kim "Fabrication of InGaAs-on-insulator Substrates Using Direct Wafer Bonding and Epitaxial Lift-off Techniques" IEEE Transactions on Electron Devices, vol. 64, no. 9, pp. 3601–3608, DOI: 10.1109/TED.2017.2722482, 2017-09
  • 285 J. Lee†, M. Lim†, J. Yoon, M. S. Kim, B. Choi, D. M. Kim, D. H. Kim, I. Park, S.-J. Choi ( †These authors equally contributed to this work) "Transparent, flexible strain sensor based on a solution-processed carbon nanotube network" ACS Applied Materials & Interfaces, DOI: 10.1021/acsami.7b03184, 2017-07
  • 284 J. Yoon§, M. Lim§, B. Choi, D. M. Kim, D. H. Kim, S. Kim*, and S.-J. Choi* ( §These authors equally contributed to this work, *co-corresponding authors) "Determination of individual contact interfaces in carbon nanotube network-based transistors" Scientific Reports, Scientific reports 7, DOI: 10.1038/s41598-017-05653-x, 2017-07
  • 283 M. Jeon§, B. Choi§, J. Yoon, D. M. Kim, D. H. Kim, I. Park*, and S.-J. Choi* (§These authors equally contributed to this work, *co-corresponding authors) "Enhanced sensing of gas molecules by a 99.9% semiconducting carbon nanotube-based field-effect transistor sensor" Applied Physics Letters, Vol. 111, no. 2, p. 022102, DOI: 10.1063/1.4991970, 2017-07
  • 282 H. J. Kim, H. Zheng, J.-S. Park, D. H. Kim, C. J. Kang, J. T. Jang, D. H. Kim, and T.-S. Yoon "Artificial synaptic characteristics with strong analog memristive switching in a Pt/CeO2/Pt structure" Nanotechnology , vol. 28, no. 28, p. 285203, DOI: 10.1088/1361-6528/aa712c, 2017-06
  • 281 H. Lee§, J. Kim§, J. Kim, S. K. Kim, Y. Lee, J.-Y. Kim, J. T. Jang, J. Park, S.-J. Choi, D. H. Kim, and D. M. Kim( §These authors equally contributed to this work) "Investigation of Infrared Photo-Detection Through Subgap Density-of-States in a-InGaZnO Thin-Film Transistors" IEEE Electron Device Letters, VOL. 38, NO. 5, DOI: 10.1109/LED.2017.2686844, 2017-05
  • 280 S. Choi, J. Jang, H. Kang, J. H. Baeck, J. U. Bae, K.-S. Park, S. Y. Yoon, I. B. Kang, D. M. Kim, S.-J. Choi, Y.-S. Kim, S. Oh, and D. H. Kim "Systematic Decomposition of the Positive Bias Stress Instability in Self-Aligned Coplanar InGaZnO Thin-Film Transistors" IEEE Electron Device Letters, VOL. 38, NO. 5, DOI: 10.1109/LED.2017.2681204, 2017-05
  • 279 S. Kim, J. Kim, J. Jang, H.-S. Mo, D. M. Kim, S.-J. Choi, B.-G. Park, D. H. Kim, J. Park "Sampling time and pH-dependences of SiNW ISFET-based biosensors" Journal of Nanoscience and Nanotechnology, Vol. 17, NO. 5, pp. 3257-3260, DOI:10.1166/jnn.2017.14038, 2017-05
  • 278 J. Jang, J. Kim, S. Kim, H.-S. Mo, D. M. Kim, S.-J. Choi, B.-G. Park, D. H. Kim, J. Park "Analysis and modeling on the pH-dependent current drift of Si nanowire ion-sensitive field effect transistor (ISFET)-based biosensors" Journal of Nanoscience and Nanotechnology, Vol. 17, NO. 5, pp. 3146–3150, DOI: 10.1166/jnn.2017.14037, 2017-05
  • 277 J.-H. Ahn, D.-I. Moon, S.-W. Ko, C.-H. Kim, J.-Y. Kim, M.-S. Kim, M. L. Seol, J.-B. Moon, J.-M. Choi, J.-S. Oh, S.-J. Choi, and Y.-K. Choi "A SONOS device with a separated charge trapping layer for improvement of charge injection" AIP Advances, vol. 7, no. 3, DOI: 10.1063/1.4978322, 2017-03
  • 276 D. H. Kim, S. Choi, J. Jang, H. Kang, D. M. Kim, S.-J. Choi, Y.-S. Kim, S. Oh, J. H. Baeck, J. U. Bae, K.-S. Park, S. Y. Yoon, and In B. Kang "Experimental decomposition of the positive bias temperature stress-induced instability in self-aligned coplanar InGaZnO thin-film transistors and its modeling based on the multiple stretched-exponenti" Journal of the SID(Society of Information Display), Vol. 25, No.2, pp.98-107, DOI : 10.1002/jsid.531, 2017-02
  • 275 C. Yoon, J. H. Lee, S. Lee, J. H. Jeon, J. T. Jang, D. H. Kim, Y. H. Kim, and B. H. Park "Synaptic Plasticity Selectively Activated by Polarization-Dependent Energy-Efficient Ion Migration in an Ultrathin Ferroelectric Tunnel Junction" Nano Letters, vol. 17, no. 3, pp 1949–1955, DOI: 10.1021/acs.nanolett.6b05308, 2017-02
  • 274 S. Kim§, B. Choi§, M. Lim§, J. Yoon, J. Lee, H.-D. Kim, S.-J. Choi ( §These authors equally contributed to this work) "Pattern Recognition Using Carbon Nanotube Synaptic Transistors with an Adjustable Weight Update Protocol" ACS nano, DOI: 10.1021/acsnano.6b07894, 2017-02
  • 273 H. Lee, J. Kim, S. Choi, S. K. Kim, J. Kim, J. Park, S.-J. Choi, D. H. Kim, D. M. Kim "Band-Bending Effect in the Characterization of Subgap Density-of-States in Amorphous TFTs Through Fully Electrical Techniques" IEEE Electron Device Letters, vol. 38, no. 2, DOI: 10.1109/LED.2016.2636301, 2017-02
  • 272 S. K. Kim, D.-M. Geum, J.-P. Shim, C. Z. Kim, H.-J. Kim, J. D. Song, W. J. Choi, S.-J. Choi, D. H. Kim, S. Kim, D. M. Kim "Fabrication and characterization of Pt/Al2O3/Y2O3/In0.53Ga0.47As MOSFETs with low interface trap density" Applied Physics Letters, vol. 110, no. 4, DOI: 10.1063/1.4974893, 2017-01
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