Journal papers

Home > Publications > Journal papers

  • 344 L. Lee, J. W. Hwang, J. W. Jung, J. C. Kim, H. I. Lee, S. W.Heo, M. H. Yoon, S. Choi, N. V. Long, J. S. Park, J. W. Jeong, J. Kim, K. R. Kim, D. H.Kim, S. I. Im, B. H. Lee, K. J. Cho, M. M. Sung* "ZnO Composite nanolayer with mobility edge quantization for multi-value logic transistors" Nature communications, vol. 10, no. 1998, pp. 1-9, DOI : 10.1038/s41467-019-09998-x , 2019-03
  • 343 Y.-T. Seo, M.-S. Lee, C.-H. Kim, S. Y. Woo, J.-H. Bae, B.-G. Park, and J.-H. Lee "Si-based FET-type synaptic device with short-term and long-term plasticity using high-k gate stack" IEEE Transactions on Electron Devices, vol. 66, no. 2, pp. 917-923, doi: 10.1109/TED.2018.2888871, 2019-02
  • 342 S. Choi, J.-Y Kim, J. Rhee, H. Kang, S. Park, D. M. Kim, S.-J Choi, D. H. Kim* "Method to extract interface and bulk trap separately over the full sub-gap range in amorphous InGaZnO thin-film transistors by using various channel thicknesses" IEEE Electron Device Letters, vol. 40, no. 4, pp. 574-577, DOI 10.1109/LED.2019.2898217, 2019-04
  • 341 K. Lee†, J.-H. Bae†, S. Kim, J.-H. Lee, B.-G. Park, and D. Kwon, (†These authors equally contributed to this work) "Ferroelectric-Gate Field-Effect Transistor Memory with Recessed Channel" IEEE Electron Device Letters, vol. 41, no. 8, pp. 1201-1204, doi: 10.1109/LED.2020.3001129, 2020-08
  • 340 M.-K. Park, H.-N. Yoo, Y.-T. Seo, S. Y. Woo, J.-H. Bae, B.-G. Park, and J.-H. Lee "Field Effect Transistor-Type Devices Using High-κ Gate Insulator Stacks for Neuromorphic Applications" ACS Applied Electronic Materials, vol. 2, no. 2, pp. 323-328, doi: 10.1021/acsaelm.9b00698, 2019-12
  • 339 S.-T. Lee, S. Lim, N. Choi, J.-H. Bae, D. Kwon, H.-S. Kim, B.-G. Park, and J.-H. Lee "Effect of Word-Line Bias on Linearity of Multi-Level Conductance Steps for Multi-Layer Neural Networks Based on NAND Flash Cells" Journal of Nanoscience and Nanotechnology, vol. 20, no. 7, pp. 4138-4142, doi: 10.1166/jnn.2020.17791, 2020-07
  • 338 D. Kwon, S. Lim, J.-H. Bae, S.-T. Lee, H. Kim, C.-H. Kim, B.-G. Park, and J.-H. Lee "Adaptive Weight Quantization Method for Nonlinear Synaptic Devices" IEEE Transactions on Electron Devices, vol. 66, no. 1, pp.395-401, doi: 10.1109/TED.2018.2879821, 2019-01
  • 337 Y.-T. Seo, M.-K. Park, J.-H. Bae, B.-G. Park, and J.-H. Lee "Implementation of Synaptic Device Using Various High-k Gate Dielectric Stacks" Journal of Naniscience and Nanotechnology, vol. 20, no. 7, pp. 4292-4297, doi: 10.1166/jnn.2020.17788, 2020-07
  • 336 S. Hong, Y. Hong, Y. Jeong, G. Jung, W. Shin, J. Park, J.-K. Lee, D. Jang, J.-H. Bae, and J.-H. Lee "Improved CO gas detection of Si MOSFET gas sensor with catalytic Pt decoration and pre-bias effect" Sensors and Actuators B: Chemical, vol. 300, p. 127040, doi: 10.1016/j.snb.2019.127040, 2019-12
  • 335 S. Y. Woo, K.-B. Choi, J. Kim, W.-M. Kang, C.-H. Kim, Y.-T. Seo, J.-H. Bae, B.-G. Park, and J.-H. Lee "Implementation of homeostasis functionality in neuron circuit using double-gate device for spiking neural network" Solid-State Electronics, vol. 165, p. 107741, doi: 10.1016/j.sse.2019.107741, 2020-03
  • 334 J. T. Jang§, H. Kang§, H. R. Yu, E. S. Kim, K. S. Son, S.-H. Cho, D. M. Kim, S.-J. Choi, D. H. Kim* "The Influence of Anion Composition on Subgap Density of States and Electrical Characteristics in ZnON Thin-Film Transistors" IEEE Electron Device Letters, vol. 40, no. 1, pp. 40-43, DOI: 10.1109/LED.2018.2883732, 2019-01
  • 333 J. Kim, C.-H. Kim, S. Y. Woo, W.-M. Kang, Y.-T. Seo, S. Lee, S. Oh, J.-H. Bae, B.-G. Park, and J.-H. Lee "Initial synaptic weight distribution for fast learning speed and high recognition rate in STDP-based spiking neural network" Solid-State Electronics, vol. 165, p. 107742, doi: 10.1016/j.sse.2019.107742, 2020-03
  • 332 S. Lim, J.-H. Bae, J.-H. Eum, S. Lee, C.-H. Kim, D. Kwon, B.-G. Park, and J.-H. Lee "Adaptive learning rule for hardware-based deep neural networks using electronic synapse devices" Neural Computing & Applications, vol. 31, no. 11, pp. 8101-8116, doi: 10.1007/s00521-018-3659-y, 2019-11
  • 331 H. Kim, J.-H. Bae, S. Lim, S.-T. Lee, Y.-T. Seo, D. Kwon, B.-G. Park, and J.-H. Lee "Efficient precise weight tuning protocol considering variation of the synaptic devices and target accuracy" Neurocomputing, vol. 378, pp. 189-196, doi: 10.1016/j.neucom.2019.09.099, 2020-02
  • 330 B. Choi, J. Lee, J. Yoon, M. Jeon, Y. Lee, J. Han, J. Lee, J. Park, Y. Kim, D. M. Kim, D. H. Kim, S. Chung, C. Lim, S.-J. Choi* "Effect of charge trap layer thickness on the charge spreading behavior within a few seconds in 3-D charge trap flash memory" Semiconductor Science and Technology, vol. 33, no. 10, doi.org/10.1088/1361-6641/aade29, 2018-09
  • 329 Y. Hong, M. Wu, J.-H. Bae, S. Hong, Y. Jeong, D. Jang, J. S. Kim, C. S. Hwang, B.-G. Park, and J.-H. Lee "A new sensing mechanism of Si FET-based gas sensor using pre-bias" Sensors and Actuators B: Chemical, vol. 302, p. 127147, doi: 10.1016/j.snb.2019.127147, 2020-01
  • 328 S.-T. Lee, S. Lim, N. Choi, J.-H. Bae, D. Kwon, B.-G. Park, and J.-H. Lee "Operation Scheme of Multi-Layer Neural Networks Using NAND Flash Memory as High-Density Synaptic Devices" IEEE Journal of the Electron Device Society, vol. 7, pp. 1085-1093, doi: 10.1109/JEDS.2019.2947316, 2019-10
  • 327 H. R. Yu, J. T. Jang, D. Ko, S. Choi, G. Ahn, S.-J. Choi, D. M. Kim, and D. H. Kim* "Degradation on the Current Saturation of Output Characteristics in Amorphous InGaZnO Thin-Film Transistors" IEEE Transactions on Electron Devices, vol. 65, no. 8, DOI: 1109/TED.2018.2844862, 2018-08
  • 326 J.-H. Bae, S. Lim, D. Kwon, S.-T. Lee, H. Kim, and J.-H. Lee "Gated Schottky Diode-Type Synaptic Device with a Field-Plate Structure to Reduce the Forward Current" Journal of Nanoscience and Nanotechnology, vol.19, no. 10, pp. 6135-6138, doi: 10.1166/jnn.2019.17003, 2019-10
  • 325 S. Kim†, B. Choi†, M. Lim, Y. Kim, H.-D. Kim, S.-J. Choi* (†These authors equally contributed to this work) "Synaptic Device Network Architecture with Feature Extraction for Unsupervised Image Classification" Small, DOI: 10.1002/small. 201800521, 2018-07
Prev12345678910Next>>
개인정보 처리방침