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  • 283 M. Jeon§, B. Choi§, J. Yoon, D. M. Kim, D. H. Kim, I. Park*, and S.-J. Choi* (§These authors equally contributed to this work, *co-corresponding authors) "Enhanced sensing of gas molecules by a 99.9% semiconducting carbon nanotube-based field-effect transistor sensor" Applied Physics Letters, Vol. 111, no. 2, p. 022102, DOI: 10.1063/1.4991970, 2017-07
  • 282 H. J. Kim, H. Zheng, J.-S. Park, D. H. Kim, C. J. Kang, J. T. Jang, D. H. Kim, and T.-S. Yoon "Artificial synaptic characteristics with strong analog memristive switching in a Pt/CeO2/Pt structure" Nanotechnology , vol. 28, no. 28, p. 285203, DOI: 10.1088/1361-6528/aa712c, 2017-06
  • 281 H. Lee§, J. Kim§, J. Kim, S. K. Kim, Y. Lee, J.-Y. Kim, J. T. Jang, J. Park, S.-J. Choi, D. H. Kim, and D. M. Kim( §These authors equally contributed to this work) "Investigation of Infrared Photo-Detection Through Subgap Density-of-States in a-InGaZnO Thin-Film Transistors" IEEE Electron Device Letters, VOL. 38, NO. 5, DOI: 10.1109/LED.2017.2686844, 2017-05
  • 280 S. Choi, J. Jang, H. Kang, J. H. Baeck, J. U. Bae, K.-S. Park, S. Y. Yoon, I. B. Kang, D. M. Kim, S.-J. Choi, Y.-S. Kim, S. Oh, and D. H. Kim "Systematic Decomposition of the Positive Bias Stress Instability in Self-Aligned Coplanar InGaZnO Thin-Film Transistors" IEEE Electron Device Letters, VOL. 38, NO. 5, DOI: 10.1109/LED.2017.2681204, 2017-05
  • 279 S. Kim, J. Kim, J. Jang, H.-S. Mo, D. M. Kim, S.-J. Choi, B.-G. Park, D. H. Kim, J. Park "Sampling time and pH-dependences of SiNW ISFET-based biosensors" Journal of Nanoscience and Nanotechnology, Vol. 17, NO. 5, pp. 3257-3260, DOI:10.1166/jnn.2017.14038, 2017-05
  • 278 J. Jang, J. Kim, S. Kim, H.-S. Mo, D. M. Kim, S.-J. Choi, B.-G. Park, D. H. Kim, J. Park "Analysis and modeling on the pH-dependent current drift of Si nanowire ion-sensitive field effect transistor (ISFET)-based biosensors" Journal of Nanoscience and Nanotechnology, Vol. 17, NO. 5, pp. 3146–3150, DOI: 10.1166/jnn.2017.14037, 2017-05
  • 277 J.-H. Ahn, D.-I. Moon, S.-W. Ko, C.-H. Kim, J.-Y. Kim, M.-S. Kim, M. L. Seol, J.-B. Moon, J.-M. Choi, J.-S. Oh, S.-J. Choi, and Y.-K. Choi "A SONOS device with a separated charge trapping layer for improvement of charge injection" AIP Advances, vol. 7, no. 3, DOI: 10.1063/1.4978322, 2017-03
  • 276 D. H. Kim, S. Choi, J. Jang, H. Kang, D. M. Kim, S.-J. Choi, Y.-S. Kim, S. Oh, J. H. Baeck, J. U. Bae, K.-S. Park, S. Y. Yoon, and In B. Kang "Experimental decomposition of the positive bias temperature stress-induced instability in self-aligned coplanar InGaZnO thin-film transistors and its modeling based on the multiple stretched-exponenti" Journal of the SID(Society of Information Display), Vol. 25, No.2, pp.98-107, DOI : 10.1002/jsid.531, 2017-02
  • 275 C. Yoon, J. H. Lee, S. Lee, J. H. Jeon, J. T. Jang, D. H. Kim, Y. H. Kim, and B. H. Park "Synaptic Plasticity Selectively Activated by Polarization-Dependent Energy-Efficient Ion Migration in an Ultrathin Ferroelectric Tunnel Junction" Nano Letters, vol. 17, no. 3, pp 1949–1955, DOI: 10.1021/acs.nanolett.6b05308, 2017-02
  • 274 S. Kim§, B. Choi§, M. Lim§, J. Yoon, J. Lee, H.-D. Kim, S.-J. Choi ( §These authors equally contributed to this work) "Pattern Recognition Using Carbon Nanotube Synaptic Transistors with an Adjustable Weight Update Protocol" ACS nano, DOI: 10.1021/acsnano.6b07894, 2017-02
  • 273 H. Lee, J. Kim, S. Choi, S. K. Kim, J. Kim, J. Park, S.-J. Choi, D. H. Kim, D. M. Kim "Band-Bending Effect in the Characterization of Subgap Density-of-States in Amorphous TFTs Through Fully Electrical Techniques" IEEE Electron Device Letters, vol. 38, no. 2, DOI: 10.1109/LED.2016.2636301, 2017-02
  • 272 S. K. Kim, D.-M. Geum, J.-P. Shim, C. Z. Kim, H.-J. Kim, J. D. Song, W. J. Choi, S.-J. Choi, D. H. Kim, S. Kim, D. M. Kim "Fabrication and characterization of Pt/Al2O3/Y2O3/In0.53Ga0.47As MOSFETs with low interface trap density" Applied Physics Letters, vol. 110, no. 4, DOI: 10.1063/1.4974893, 2017-01
  • 271 J. Lee, J. Yoon, B. Choi, D. Lee, D. M. Kim, D. H. Kim, Y.-K. Choi, S.-J. Choi "Ink-jet printed semiconducting carbon nanotube ambipolar transistors and inverters with chemical doping technique using polyethyleneimine" Applied Physics Letters, vol. 109, no. 26, p. 263103, DOI: 10.1063/1.4973360, 2016-12
  • 270 C.-Y. Jeong, H.-J. Kim, D.-H. Kim, H.-S. Kim, T. S. Kim, J.-B. Seon, S. Lee, D. H. Kim, H.-I. Kwon "Investigation of Carrier Transport Mechanism in High Mobility ZnON Thin-Film Transistors" IEEE ELECTRON DEVICE LETTERS, vol. 37, no. 12, pp.1570-1573 DOI: 10.1109/LED.2016.2619684, 2016-12
  • 269 D. Lee, B.-H. Lee, J. Yoon, D.-C. Ahn, J.-Y.Park, J. Hur, M.-S. Kim, S.-B. Jeon, M.-H. Kang, K. Kim, M. Lim, Y.-K. Choi*, S.-J. Choi* (*co-corresponding authors) "Three-dimensional Fin-structured Semiconducting Carbon Nanotube Network Transistor" ACS nano, vol. 10, no. 12, pp. 10894-10900, DOI: 10.1021/acsnano.6b05429, 2016-11
  • 268 S. Kim, D. W. Kwon, R. Lee, D. H. Kim, B.-G. Park "Investigation of drift effect on silicon nanowire field effect transistor based pH sensor" Japanese Journal of Applied Physics, vol. 55, no. 6S1, DOI: 10.7567/JJAP.55.06GG01, 2016-04
  • 267 C.-Y. Jeong, H.-J. Kim, D.-H. Kim, H.-S. Kim, E. S. Kim, T. S. Kim, J. S. Park, J.-B. Seon, K. S. Son, S. Lee, S.-H. Cho, Y. S. Park, D. H. Kim, H.-I. Kwon "Investigation of Low-Frequency Noise Properties in High-Mobility ZnON Thin-Film Transistors" IEEE Electron Device Letters, vol. 37, no. 6, pp. 739-742, DOI: 10.1109/LED.2016.2558204, 2016-06
  • 266 J. Kim§, H. Lee§, S. K. Kim, J. Kim, J. Park, S.-J. Choi, D. H. Kim, D. M. Kim ( §These authors equally contributed to this work) "Hybrid Open Drain Method and Fully Current- Based Characterization of Asymmetric Resistance Components in a Single MOSFET" IEEE Transactions on Electron Devices, Vol. 63, no. 11, pp. 4196-4200, DOI: 10.1109/TED.2016.2607721, 2016-09
  • 265 J. Yoon§, J. Lee§, B. Choi§, D. Lee, D. H. Kim, D. M. Kim, D.-I. Moon, M. Lim, S. Kim, S.-J. Choi ( §These authors equally contributed to this work) "Flammable carbon nanotube transistors on a nitrocellulose paper substrate for transient electronics" Nano Research, DOI: 10.1007/s12274-016-1268-6, 2016-09
  • 264 K. M. Lee, J. T. Jang, Y.-J. Baek, H. Kang, S. Choi, S.-J. Choi, D. M. Kim, C. J. Kang, T.-S. Yoon, H.-S. Mo, D. H. Kim "The γ -Fe2O3 Nanoparticle Assembly-Based Memristor Ratioed Logic and Its Optical Tuning" IEEE Electron Device Letters, Vol. 37, no. 8, pp. 986-989, DOI: 10.1109/LED.2016.2582523 , 2016-08
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