Journal papers
Home > Publications > Journal papers
- 191 "Hybrid C-V and I-V Technique for Separate Extraction of Structure- and Bias-Dependent Parasitic Resistances in a-InGaZnO TFTs" IEEE Electron Device Letters, vol. 33, no 4, 2012-04
- 190 "Extraction of the sub-bandgap density-of-states in polymer thin-film transistor with the multi-frequency capacitance-voltage spectroscopy" Appl. Phys. Letters, vol. 100, issue. 13, p. 133506, 2012-03
- 189 "Differential Ideality Factor Technique for Extraction of Subgap Density of States in Amorphous InGaZnO Thin-Film Transistors" IEEE Electron Device Letters, vol.33, no. 3, pp. 339-401, 2012-03
- 188 "Vertical Gate Si/SiGe Double HBT-based Capacitorless 1T DRAM Cell for Extended Retention time at Low Latch Voltage" IEEE Electron Device Letters, vol.33, no. 2, pp. 134-136, 2012-02
- 187 "Impact of Oxygen Flow Rate on the Instability under Positive Bias-Stresses in DC Sputtered Amorphous InGaZnO Thin-Film Transistors" IEEE Electron Device Letters, vol. 33, no. 1,pp. 62-64, 2012-01
- 186 "Physical Parameter-Based SPICE Models for InGaZnO Thin Film Transistors Applicable to Process Optimization and Robust Circuit Design" IEEE Electron Device Letters, vol. 33, no. 1, pp. 59-61, 2012-01
- 185 "Endurance Characteristics of Amorphous-InGaZnO Transparent Flash Memory With Gold Nanocrystal Storage Layer" IEEE Trans. Electron Devices, vol. 58, no. 11, pp. 3940-3947, 2011-11
- 184 "Origin of instability by positive bias stress in amorphous Si-In-Zn-O thin film transistor" Appl. Phys. Lett., vol. 99, pp. 172106, 2011-10
- 183 "Effect of interface states on the instability under temperature stress in amorphous SiInZnO thin film transistor" Appl. Phys. Lett., vol. 99, pp. 162101, 2011-10
- 182 "A narrow bandgap SiGe channel superlattice bandgap engineered 1T DRAM cell for low voltage operation and extended hole retention time" Semiconductor Science and Technology, vol. 26, pp. 095025, 2011-08
- 181 "Physics-Based SPICE Model of a-InGaZnO Thin-Film Transistor Using Verilog-A" Journal of Semiconductor Technology and Science, vol. 11, no. 3, 2011-09
- 180 "Quantitative Analysis of Negative Bias Illumination Stress-Induced Instability Mechanisms in Amorphous InGaZnO Thin-Film Transistors" J. Korean Phys. Soc., vol. 59, no. 2, pp. 474~477, 2011-08
- 179 "Effect of the Active Layer Thickness on the Negative Bias Illumination Stress-induced Instability in Amorphous InGaZnO Thin-film Transistors" J. Korean Phys. Soc., vol. 59, no. 2, pp. 505-510, 2011-08
- 178 "AC stress-induced degradation of amorphous InGaZnO thin film transistor inverter" Japanese J. Appl. Phys., vol. 50, p. 090202, 2011-09
- 177 "The Effect of the Active Layer Thickness on the Negative Bias Stress-Induced Instability in Amorphous InGaZnO Thin-Film Transistors" IEEE Electron Device Lett., vol. 32, no. 10, pp. 1388-1390, 2011-10
- 176 "Surface Potential-Based Analytic DC I-V Model with Effective Electron Density for Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors Considering Parastic Resistance" IEEE Electron Device Letters., vol. 32, no. 11, pp. 1540-1542, 2011-11
- 175 "Analytical Models for Drain Current and Gate Capacitance in Amorphous InGaZnO Thin Film Transistors with Effecitve Carrier Density" IEEE Electron Device Letters., vol. 32, no. 11, pp. 1546-1548, 2011-11
- 174 "Extraction of Subgap Donor States in a-IGZO TFTs by Generation-Recombination Current Spectroscopy" IEEE Electron Device Lett., vol. 32, no. 9, pp. 1248-1250, 2011-09
- 173 "Differential Body Factor Technique for Characterization of Interface Trap in MOSFETs" IEEE Electron Device Lett., vol. 32, no. 9, pp. 1206-1208, 2011-09
- 172 "A Novel Double HBT-based Capacitorless 1T DRAM Cell with Si/SiGe Heterojunctions" IEEE Electron Device Lett., vol. 32, no. 7, pp. 850-852, 2011-07
S!LK / TEL : 02-910-5350 / FAX : 02-910-4449
861-1 JEONGNEUNG-DONG SEONGBUK-GU SEOUL KOREA [136-702] KOOKMIN-UNIV 7TH BUILDING 7TH FLOOR NO.704
COPYRIGHT(c) 2013 Semiconductor Devices & !ntegrated Circuits Lab.@ KMU All rights reserved.
