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  • 171 S. Y. Lee, D. H. Kim, E. Chong, Y. W. Jeon, and D. H. Kim "Effect of channel thickness on density of states in amorphous InGaZnO thin film transistor" Applied Physics Letters, vol. 98, no. 12, pp. 1077-3118, 2011-03
  • 170 E. Chong, Y. W. Jeon, Y. S. Chun, D. H. Kim, and S. Y. Lee "Localization effect of a current-path in amorphous In-Ga-Zn-O thin film transistors with a highly doped buried-layer" Thin Solid Film, vol. 519, no. 13, pp. 4347-4350, 2011-04
  • 169 H. Bae, J. Jang, J. S. Shin, D. Yun, J. Lee, T. W. Kim, D. H. Kim, and D. M. Kim "Modeling and Separate Extraction of Gate Bias- and Channel Length-Dependent Intrinsic and Extrinsic Source-Drain Resistances in MOSFETs" IEEE Electron Device Lett., vol. 32, no. 6, pp. 722-724, 2011-06
  • 168 H. Bae, S. Kim, M.-K. Bae, J. S. Shin, D. Kong, H.-K. Jung, J. Jang, J. Lee, D. H. Kim, and D. M. Kim "Extraction of Separated Source and Drain Resistances in Amorphous Indium-Gallium-Zinc-Oxide TFTs through C-V Characterization" IEEE Electron Device Lett., vol. 32, no. 6, pp. 761-763, 2011-06
  • 167 J. Lee, J. H. Lee, I.-Y. Chung, C.-J. Kim, B.-G. Park, D. M. Kim, and D. H. Kim "Comparative Study on Energy-Efficiencies of Single-Electron Transistor-Based Binary Full Adders Including Non-Ideal Effects" IEEE Transactions on Nanotechnology., vol. 10, no. 5, pp. 1180-1190, 2011-09
  • 166 S. Lee, J. S. Shin, J. Jang, H. Bae, D. Yun, D. H. Kim, and D. M. Kim "A Novel Capacitorless DRAM Cell unsing Superlattice Band-gap Engineered(SBE) Structure with 30nm Channel Length" IEEE Transactions on Nanotechnology., vol. 10, no. 5, pp. 1023-1030, 2011-09
  • 165 J.-H. Park , H.-K. Jung, S. Kim, S. Lee, D. H. Kim, and D. M. Kim "Empirical Modeling and Extraction of Parasitic Resistance in Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors" IEEE Transactions on Electron Devices, vol. 58, no. 8, pp. 2796-2799, 2011-08
  • 164 S. W. Lee, Y. W. Jeon, S. Kim, D. Kong, D. H. Kim, and D. M. Kim "Comparative Study of Quasi-Static and Normal Capacitance-Voltage Characteristics in Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors" Solid-State Electronics, vol. 56, no. 1, pp. 95-99, 2011-02
  • 163 E. Chong, Y. W. Jeon, Y. S. Chun, D. H. Kim, and D. M. Kim "Design of Noncoplanar Diagonal Electrode Structure for Oxide Thin-Film Transistor" IEEE Electron Device Letters, vol. 32, no. 1, pp. 39-41, 2011-01
  • 162 K. Y. Kim, J. M. Jang, D. Y. Yun, D. M. Kim, D. H. Kim "Comparative Study in the Structural Dependence of Logic Gate Delays in Double-Gate and Tripple-Gate FinFETs" Journal of Semiconductor Technology and Science, vol. 10, no. 2, pp. 1385-1388, 2010-06
  • 161 J. C. Park, S. Kim, S. Kim, C. Kim, I. Song, Y. Park, U.-I. Jung, D. H. Kim and J.-S. Lee "Highly Stable Transparent Amorphous Oxide Semiconductor Thin-Film Transistors Having Double-Stacked Active Layer" Advanced Materials, vol. 22, no.48, pp. 5512-5516, 2010-12
  • 160 J. C. Park, S. I. Kim, C. J. Kim, S. Kim, D. H. Kim, I.-T. Cho, and H.-I. Kwon "Impact of High-k HfO2 Dielectric on the Low-Frequency Noise Behaviors in Amorphous InGaZnO Thin Film Transistors" Japanese Journal of Applied Physics, vol. 49, no. 10, p. 100205, 2010-10
  • 159 J. C. Park, S. W. Kim, C. J. Kim, S. Kim, D. H. Kim, I.-T. Cho, and H.-I. Kwon "Low-frequency noise in amorphous indium-gallium-zinc oxide thin-film transistors from subthreshold to saturation" Appl. Phys. Lett., vol. 97, no. 12, pp. 122104, 2010-09
  • 158 H. Bae, S. C. Baek, S. Lee, J. Jang, J. S. Shin, D. Yun, H. Kim, D. H. Kim, and D. M. Kim "Separate Extraction of Source, Drain, and Substrate Resistances in MOSFETs with Parasitic Junction Current Method" IEEE Electron Device. Letters., vol. 31, no. 11, pp. 1190-1192, 2010-11
  • 157 Y. W. Jeon, S. Kim, S. Lee, D. M. Kim, D. H. Kim, J. Park, C. J. Kim, I. Song, Y. Park, U-I. Chung, J.-H. Lee, B. D. Ahn, S. Y. Park, J.-H. Park and J. H. Kim "Subgap Density of States-Based Amorphous Oxide Thin Film Transistor Simulator (DeAOTS)" IEEE Transactions on Electron Devices, vol. 57, no. 1, pp. 2988-3000, 2010-11
  • 156 S. Kim, Y. W. Jeon, J.-H. Lee, B. D. Ahn, S. Y. Park, J.-H. Park, J. H. Kim, J. Park, D. M. Kim, and D. H. Kim "Relation between Low Frequency Noise and Subgap Density of States in Amorphous InGaZnO Thin Film Transistors" IEEE Electron Device. Letters., vol. 31, no. 11, pp. 1236-1238, 2010-11
  • 155 S. Lee, Y. W. Jeon, T.-J. K. Liu, D. H. Kim, and D. M. Kim "A Novel Self-Aligned 4-Bit SONOS-Type Nonvolatile Memory Cell With T-Gate and I-Shaped FinFET Structure" IEEE Transactions on Electron Devices., vol. 57, no. 8, pp. 1728-1736, 2010-08
  • 154 K. Y. Kim, J. M. Jang, D. Y. Yun, D. M. Kim, D. H. Kim "Comparitive Study in the Structural Dependence of Logic Gate Delays in Double-Gate and Tripple-Gate FinFETs" Journal of Semiconductor Technology and Science, vol. 10, no. 2, pp. 1385-1388, 2010-06
  • 153 K. Jeon, S. Lee, D. M. Kim, and D. H. Kim "Sub-bandgap optical subthreshold current spectroscopy for extracting energy distribution of interface states in nitride-based charge trap flash memories" Solid-State Electronics, vol. 96, no. 5, pp. 557-563, 2010-05
  • 152 S. Lee, J.-H. Park, K. Jeon, S. Kim, Y. Jeon, D. H. Kim, D. M. Kim, J. C. Park and C. J. Kim "Modeling and characterization of metal-semiconductor-metal-based source-drain contacts in amorphous InGaZnO thin film transistors" Appl. Phys. Lett., vol. 96, no. 11, p. 113506, 2010-03
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