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  • 163 E. Chong, Y. W. Jeon, Y. S. Chun, D. H. Kim, and D. M. Kim "Design of Noncoplanar Diagonal Electrode Structure for Oxide Thin-Film Transistor" IEEE Electron Device Letters, vol. 32, no. 1, pp. 39-41, 2011-01
  • 162 K. Y. Kim, J. M. Jang, D. Y. Yun, D. M. Kim, D. H. Kim "Comparative Study in the Structural Dependence of Logic Gate Delays in Double-Gate and Tripple-Gate FinFETs" Journal of Semiconductor Technology and Science, vol. 10, no. 2, pp. 1385-1388, 2010-06
  • 161 J. C. Park, S. Kim, S. Kim, C. Kim, I. Song, Y. Park, U.-I. Jung, D. H. Kim and J.-S. Lee "Highly Stable Transparent Amorphous Oxide Semiconductor Thin-Film Transistors Having Double-Stacked Active Layer" Advanced Materials, vol. 22, no.48, pp. 5512-5516, 2010-12
  • 160 J. C. Park, S. I. Kim, C. J. Kim, S. Kim, D. H. Kim, I.-T. Cho, and H.-I. Kwon "Impact of High-k HfO2 Dielectric on the Low-Frequency Noise Behaviors in Amorphous InGaZnO Thin Film Transistors" Japanese Journal of Applied Physics, vol. 49, no. 10, p. 100205, 2010-10
  • 159 J. C. Park, S. W. Kim, C. J. Kim, S. Kim, D. H. Kim, I.-T. Cho, and H.-I. Kwon "Low-frequency noise in amorphous indium-gallium-zinc oxide thin-film transistors from subthreshold to saturation" Appl. Phys. Lett., vol. 97, no. 12, pp. 122104, 2010-09
  • 158 H. Bae, S. C. Baek, S. Lee, J. Jang, J. S. Shin, D. Yun, H. Kim, D. H. Kim, and D. M. Kim "Separate Extraction of Source, Drain, and Substrate Resistances in MOSFETs with Parasitic Junction Current Method" IEEE Electron Device. Letters., vol. 31, no. 11, pp. 1190-1192, 2010-11
  • 157 Y. W. Jeon, S. Kim, S. Lee, D. M. Kim, D. H. Kim, J. Park, C. J. Kim, I. Song, Y. Park, U-I. Chung, J.-H. Lee, B. D. Ahn, S. Y. Park, J.-H. Park and J. H. Kim "Subgap Density of States-Based Amorphous Oxide Thin Film Transistor Simulator (DeAOTS)" IEEE Transactions on Electron Devices, vol. 57, no. 1, pp. 2988-3000, 2010-11
  • 156 S. Kim, Y. W. Jeon, J.-H. Lee, B. D. Ahn, S. Y. Park, J.-H. Park, J. H. Kim, J. Park, D. M. Kim, and D. H. Kim "Relation between Low Frequency Noise and Subgap Density of States in Amorphous InGaZnO Thin Film Transistors" IEEE Electron Device. Letters., vol. 31, no. 11, pp. 1236-1238, 2010-11
  • 155 S. Lee, Y. W. Jeon, T.-J. K. Liu, D. H. Kim, and D. M. Kim "A Novel Self-Aligned 4-Bit SONOS-Type Nonvolatile Memory Cell With T-Gate and I-Shaped FinFET Structure" IEEE Transactions on Electron Devices., vol. 57, no. 8, pp. 1728-1736, 2010-08
  • 154 K. Y. Kim, J. M. Jang, D. Y. Yun, D. M. Kim, D. H. Kim "Comparitive Study in the Structural Dependence of Logic Gate Delays in Double-Gate and Tripple-Gate FinFETs" Journal of Semiconductor Technology and Science, vol. 10, no. 2, pp. 1385-1388, 2010-06
  • 153 K. Jeon, S. Lee, D. M. Kim, and D. H. Kim "Sub-bandgap optical subthreshold current spectroscopy for extracting energy distribution of interface states in nitride-based charge trap flash memories" Solid-State Electronics, vol. 96, no. 5, pp. 557-563, 2010-05
  • 152 S. Lee, J.-H. Park, K. Jeon, S. Kim, Y. Jeon, D. H. Kim, D. M. Kim, J. C. Park and C. J. Kim "Modeling and characterization of metal-semiconductor-metal-based source-drain contacts in amorphous InGaZnO thin film transistors" Appl. Phys. Lett., vol. 96, no. 11, p. 113506, 2010-03
  • 151 S. Lee, S. Park, S. Kim, Y. Jeon, K. Jeon, J.-H. Park, J. Park, I. Song, C. J. Kim, Y. Park, D. M. Kim, and D. H. Kim "Extraction of Subgap Density of States in Amorphous InGaZnO Thin Film Transistors by Using Multi-Frequency Capacitance-Voltage Characteristics" IEEE Electron Device. Letters., vol. 31, no. 3, pp. 231-233, 2010-03
  • 150 K. J. Song, S. Y. Lee, D. H. Kim, and D. M. Kim "Structural optimization of extremely scaled planar partially insulated field effect transistors (PiFETs)" Semicond. Sci. Technol., vol. 25 , pp. 035004-1－035004-6, 2010-01
  • 149 J.-H. Park, K. Jeon, S. Lee, S. Kim, S. Kim, I. Song, J. Park, Y. Park, C. J. Kim, D. M. Kim, and D. H. Kim "Self-Consistent Technique for Extracting Density of States in Amorphous InGaZnO Thin Film Transistors" Journal of The Electrochemichal Society, vol. 157, no. 3, pp. h272-h277, 2010-01
  • 148 J. H. Kim, S.-W. Kim, D. Q. A. Nguyen, H. Li, S. B. Kim, Y.-G. Seo, J.-K. Yang, I.-Y. Chung, D. H. Kim, and C.-J Kim "Production of β-carotene by Recombinant Escherichia coli with Engineered Whole Mevalonate Pathway in Batch and Fed-batch Cultures" Biotechnol. Bioprocess Eng., vol. 14 , pp. 559-564, 2009-07
  • 147 J. Jang, C. Choi, J.-S. Lee, K.-S. Min, J.-G. Lee, D. M. Kim, and D. H. Kim "Design of gate stacks for improved program/erase speed, retention and process margin aiming next generation metal nanocrystal memories" Semicond. Sci. Technol., vol. 24 , pp. 115009, 2009-10
  • 146 J. Lee, C. Choi, S. Park, I.-Y. Chung, C.-J. Kim, B.-G. Park, D. M. Kim, and D. H. Kim "Ultra-energy-efficient analog-to-digital converters based on single-electron transistor/CMOS hybrid technology for biomedical applications" Semicond. Sci. Technol., vol. 24 , pp. 115007, 2009-10
  • 145 J.-H. Park, S. Lee, K. Jeon, S. Kim, S. Kim, J. Park, I. Song, C. J. Kim, Y. Park, D. M. Kim, and D. H. Kim "Density of States-Based DC I-V Model of Amorphous Gallium-Indium-Zinc-Oxide Thin-Film Transistors" IEEE Electron Device Letters., vol. 30, no. 10, pp. 1069-1071, 2009-10
  • 144 S. Lee, K. Jeon, J.-H. Park, S. Kim, D. Kong, D. M. Kim, D. H. Kim, S. Kim, S. Kim, J. Hur, J. C. Park, I. Song, C. J. Kim, Y. Park, and U.-I. Jung "Electrical stress-induced instability of amorphous indium-gallium-zinc oxide thin-film transistors under bipolar ac stress" Appl. Phys. Lett., vol. 95, pp. 132101-1-132101-3, 2009-09
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