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  • 12 Y.‐K. Choi, M. Jang, and S.‐J. Choi "High speed Flash Memory by a Dopant‐Segregated Schottky‐Barrier MOSFET" 2009 Bulletin of the Korean Physical Society, pp. 191, 2009-10
  • 11 S.‐J. Choi, J.‐W. Han, S. Kim, D.‐I. Moon, M. Jang, J. S. Kim, K. H. Kim, G. S. Lee, J. S. Oh, M. H. Song, Y. C. Park, J. W. Kim, and Y.‐K. Choi "Performance Breakthrough in NOR Flash Memory with Dopant‐Segregated Schottky‐Barrier (DSSB) SONOS Devices" Symposium on VLSI Technology Digest of Technical Papers (VLSI), pp. 222‐223, 2009-06
  • 10 S.‐J. Choi, S.‐W. Ryu, J.‐W. Han, S. Kim, and Y.‐K. Choi "A Novel Capacitorless DRAM Operated by Gate‐Induced Drain‐Leakage (GIDL) for Improved Sensing Window and Low Power Operation" Proceedings of the 16th Korean Conference on Semiconductors, pp. 62-63, 2009-02
  • 9 J.‐W. Han, S.‐W. Ryu, S. Kim, C.‐J. Kim, J.‐H. Ahn, S.‐J. Choi, K. J. Choi, B. J. Cho, J. S. Kim, K. H. Kim, G. S. Lee, J. S. Oh, M. H. Song, Y. C. Park, J. W. Kim, and Y.‐K. Choi "Gate‐All‐Around Silicon Nanowire MOSFETs on Bulk Substrate" Proceedings of the 16th Korean Conference on Semiconductors, 2009-02
  • 8 S. Park , S.-C. Baek, Y. J. Seo, H.-M. An, T. G. Kim, D. M. Kim, and D. H. Kim "Comparative Study on Dynamic Bias Temperature Instability-like Behavior with Program/Erase Cycles in MANOS and SONOS Memories" The 16th Korean Conference on Semiconductors, 2009-
  • 7 S. R. Park, C. Choi, D. M. Kim, and D. H. Kim "Comparative Study on Program Speed and Retention Characteristics in Advanced Nitride-Based Charge Trap Flash (CTF) Memories in Perspective of Vertical Location of Charge Traps" The 16th Korean Conference on Semiconductors, 2009-
  • 6 J. Lee, C. Choi, S. Park, J. Jang, I.-Y. Chung, C.-J. Kim, D. M. Kim, and D. H. Kim "Comparative Study on Ultra-Energy-Efficient Full Adders Based on Single-Electron Transistors" 16th Korean Conference on Semiconductors, 2009-
  • 5 C. Choi, S. R. Park, J. Jang, J.-S. Lee, K.-S. Min, J. G. Lee, D. M. Kim, and D. H. Kim "Comparative Study on Program/Erase Speed, Retention, and Process Margin for Manufacturability of High Performance Metal Nanocrystal Memories" The 16th Korean Conference on Semiconductors, 2009-
  • 4 J.-H. Park, K. Jeon, S. Lee, Y. W. Jeon, C. Kim, I. Song, J. Park, S. Kim, S. Kim, Y. Park, D. M. Kim, and D. H. Kim "Density of States-Based Model of Amorphous GaInZnO Thin Film Transistors by Using Optical Charge Pumping Technique" The 16th Korean Conference on Semiconductors, 2009-
  • 3 T. Y. Kim, S. R. Park, S.-C. Baek, Y. W. Jeon, Y. J. Seo, H.-M. An, T. G. Kim, D. H. Kim, and D. M. Kim "Extraction of Trap Energy Distribution in Nitride-based MANOS Charge Trap Flash Memory by Combining the Iteration Method with Optical C-V Measurement" The 16th Korean Conference on Semiconductors, 2009-
  • 2 J. C. Park, S. W. Kim, S. I. Kim, H. Yin, J. H. Hur, S. H. Jeon, S. H. Park, I. H. Song, Y. S. Park, U. I. Chung, M. K. Ryu, S. Lee, S. Kim, Y. Jeon, D. M. Kim, D. H. Kim, K.-W. Kwon and C. J. Kim "High performance amorphous oxide thin film transistors with self-aligned top-gate structure" IEDM Tech. Dig., pp. 191-194, 2009-
  • 1 S. Lee, K. Jeon, J.-H. Park, Y. W. Jeon, C. Kim, I. Song, J. Park, S. Kim, S. Kim, Y. Park, D. H. Kim, and D. M. Kim "Modeling and Characterization of Metal-Semiconductor-Metal-based Source-Drain Contacts for Design and Robust Implementation of a -GaInZnO TFTs" The 16th Korean Conference on Semiconductors, 2009-
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