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  • 84 H. Bae, S. Kim, M. Bae, H. Seo, W. H. Lee, M. Uhm, D. H. Kim, and D. M. Kim "Separate Extraction of Source and Drain Resistances in Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistor with Parallel Mode C-V Technique" The 18th Korean Conference on Semiconductors, 2011-02
  • 83 J. S. Shin, H. Bae, J. Jang, J. Lee, D. Yun, H. Jang, E. Hong, M. Uhm, W. H. Lee, H. Seo, D. H. Kim, and D. M. Kim "Superlattice Band-gap Engineered(SBE) Capacitorless 1T DRAM Cell with a Narrow Bandgap SiGe Channel for High Performance and Extended Retention of Holes" The 18th Korean Conference on Semiconductors, 2011-02
  • 82 S. Kim, Y. Jeon, Y. Kim, D. S. Kong, H. K. Jung, M.-K. Bae, J. Lee, J. Jang, H. Jang, J. Kim, W. Kim, I. Hur, J.-S. Lee, D. M. Kim, and D. H. Kim "The oxygen flow-rate-dependence of electrical stress-induced instability of amorphous InGaZnO thin-film transistors" The 18th Korean Conference on Semiconductors, 2011-02
  • 81 D. S. Kong, H. K. Jung, M.-K. Bae, Y. Kim, S. Kim, Y. Jeon, J. Kim, W. Kim, I. Hur, J. Lee, J. Jang, J.-S. Lee, D. M. Kim, and D. H. Kim "The Effect of the Active Layer Thickness on the Negative Bias Illumination Stress-Induced Instability in Amorphous InGaZnO Thin-Film Transistors" The 18th Korean Conference on Semiconductors, 2011-02
  • 80 S.‐J. Choi, D.‐I. Moon, Y. Ding, E. Y. J. Kong, Y.‐C. Yeo, and Y.‐K. Choi "A Novel Floating Body Cell Memory with Laterally Engineered Bandgap using Si‐Si:C Heterostructure" IEEE International Electron Device Meeting IEDM), 22.4, pp. 532‐555, 2010-12
  • 79 D.‐I. Moon, S.‐J. Choi, C.‐J. Kim, J.‐Y. Kim, J.‐S. Lee, J.‐S. Oh, G.‐S. Lee, Y.‐C. Park, D.‐W. Hong, D.‐W. Lee, Y.‐S. Kim, J.‐W. Kim, J.‐W. Han, and Y.‐K. Choi "Ultimately Scaled 20nm Unified‐RAM" IEEE International Electron Device Meeting (IEDM), 12.2, pp. 284‐287, 2010-12
  • 78 S.‐J. Choi, J.‐W. Han, S. Kim, D.‐I. Moon, M. Jang, and Y.‐K. Choi "A Novel TFT with a Laterally Engineered Bandgap for 3D Logic and Flash Memory" Symposium on VLSI Technology Digest of Technical Papers (VLSI), pp. 111‐112, 2010-06
  • 77 S. Lee, J. Jang, J. Shin, H. Kim, H. Bae, D. Yun, D. H. Kim, and D. M. Kim "A Novel Superlattice Band-Gap Engineered (SBE) Capacitorless DRAM Cell with Extremely Short Channel Length Down to 30 nm" IEEE International Memory Workshop (IMW), 2010-05
  • 76 S. Kim, Y. W. Jeon, S. Lee, D. M. Kim, D. H. Kim, S. W. Kim, S. I. Kim, J. Park, U-I. Chung and C.-J. Kim "Analysis on AC stress-Induced Degradation Mechanism of Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistor Inverters" in SID'10 Dig. Tech. Papers, pp. 1380-1384, 2010-05
  • 75 S. Lee, S. Kim, Y. W. Jeon, D. M. Kim, D. H. Kim, J.-H. Lee, B. D. Ahn, S. Y. Park, J.-H. Park, J. H. Kim and J. Park "Comparison between a-InGaZnO and a-InHfZnO TFTs in Perspective of Subgap Density of States (DOS) in Active Film" in SID'10 Dig. Tech. Papers, pp. 1389-1392, 2010-05
  • 74 Y. W. Jeon, S. Kim, S. Lee, D. M. Kim, D. H. Kim, S. W. Kim, S. I. Kim, J. Park, U-I. Chung, C.-J. Kim, J.-H. Lee, B. D. Ahn, S. Y. Park, J.-H. Park, J. H. Kim and J. Park "Subgap Density of States-Based Amorphous Oxide Thin Film Transistor Simulator (DAOTS) for Process Optimization and Circuit Design" in SID'10 Dig. Tech. Papers, pp. 1385-1388, 2010-05
  • 73 D.‐I. Moon, S.‐J. Choi, J.‐W. Han, and Y.‐K. Choi "A Study of a BJT based capacitorless 1T‐DRAM with Consideration of Geometrical Dependence" Proceedings of the 17th Korean Conference on Semiconductors, pp. 7‐8, Daegu, 2010-02
  • 72 M. Jang, M. Jun, Y.‐K. Choi, and S.‐J. Choi "Metal source/drain technology for nanoscale MOSFET & high speed flash applications" Semicon Korea 2010, 2010-02
  • 71 Y. W. Jeon, S. Lee, S. Kim, H. Jung, D. Kong, Y. Kim, M. Bae, D. M. Kim, and D. H. Kim "A physical parameter based on DC I-V numerical model of amorphous InGaZnO Thin Film Transistors" The 17th Korean Conference on Semiconductors, 2010-02
  • 70 S. C. Baek, S. W. Park, H. Y. Bae, J. M. Jang, J. E. Lee, S. Y. Lee, H. R. Jang, H. J. Kim, D. Y. Yun, J. S. Shin, D. H. Kim, and D. M. Kim "Accurate Extraction of Gate Capacitances in Leaky MOS Systems using Modified 3-element circuit Model Combining the Multi-Frequency Capacitance-Voltage Method" The 17th Korean Conference on Semiconductors, 2010-02
  • 69 D. Kong, S. Lee, Y. Jeon, S. Kim, Y. Kim, H. Jung, M. Bae, D. M. Kim and D. H. Kim "Electrical stress-induced instability of amorphous InGaZnO thin-film transistors under bipolar AC stress" The 17th Korean Conference on Semiconductors, 2010-02
  • 68 S. Lee, Y. W. Jeon, J. Jang, J. S. Sin, H. J. Kim, H. Y. Bae, D. H. Yun, D. H. Kim, and D. M. Kim "A Novel Self-Aligned 4-bit SONOS-Type Non-Volatile Memory Cell with T-Gate and I-Shaped FinFET Structure and Low Current Sense Amplifier" The 17th Korean Conference on Semiconductors, 2010-
  • 67 S. Lee, Y. Jeon, S. Kim, M.-K. Bae, D. Kong, Y. Kim, H. K. Jung, D. M. Kim, and D. H. Kim "Characterization of the C-V Response of Amorphous Indium Gallium Zinc Oxide TFTs" 17th Korean Conference on Semiconductors, 2010-
  • 66 S. Lee, S. Park, S. Kim, Y. Jeon, D. Kong , M.-K. Bae, H. K. Jung, Y. S. Kim, D. M. Kim, and D. H. Kim "Subgap Density-of-States Extraction of Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors by Using Multiple Frequency C-V Characteristics" The 17th Korean Conference on Semiconductors, 2010-
  • 65 Y.‐K. Choi, M. Jang, and S.‐J. Choi "High speed Flash Memory by a Dopant‐Segregated Schottky‐Barrier MOSFET" 2009 Bulletin of the Korean Physical Society, pp. 191, 2009-10
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